JPWO2022259868A1 - - Google Patents
Info
- Publication number
- JPWO2022259868A1 JPWO2022259868A1 JP2023527605A JP2023527605A JPWO2022259868A1 JP WO2022259868 A1 JPWO2022259868 A1 JP WO2022259868A1 JP 2023527605 A JP2023527605 A JP 2023527605A JP 2023527605 A JP2023527605 A JP 2023527605A JP WO2022259868 A1 JPWO2022259868 A1 JP WO2022259868A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021095886 | 2021-06-08 | ||
PCT/JP2022/021356 WO2022259868A1 (ja) | 2021-06-08 | 2022-05-25 | プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2022259868A1 true JPWO2022259868A1 (ja) | 2022-12-15 |
JPWO2022259868A5 JPWO2022259868A5 (ja) | 2024-05-21 |
Family
ID=84425942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023527605A Pending JPWO2022259868A1 (ja) | 2021-06-08 | 2022-05-25 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20240105424A1 (ja) |
JP (1) | JPWO2022259868A1 (ja) |
KR (1) | KR20240017372A (ja) |
CN (1) | CN117397014A (ja) |
TW (1) | TW202308469A (ja) |
WO (1) | WO2022259868A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3046643B2 (ja) * | 1991-06-10 | 2000-05-29 | 富士通株式会社 | 半導体装置の製造方法 |
JP6002556B2 (ja) * | 2012-11-27 | 2016-10-05 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
KR102124407B1 (ko) * | 2016-01-18 | 2020-06-18 | 주식회사 히타치하이테크 | 플라스마 처리 방법 및 플라스마 처리 장치 |
JP6963950B2 (ja) | 2017-09-22 | 2021-11-10 | Dowaエレクトロニクス株式会社 | 鉄粉およびその製造方法並びにインダクタ用成形体およびインダクタ |
JP7002268B2 (ja) | 2017-09-28 | 2022-01-20 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP6976228B2 (ja) * | 2018-07-23 | 2021-12-08 | 株式会社日立ハイテク | プラズマ処理装置 |
-
2022
- 2022-05-25 TW TW111119448A patent/TW202308469A/zh unknown
- 2022-05-25 KR KR1020237045276A patent/KR20240017372A/ko unknown
- 2022-05-25 CN CN202280039064.5A patent/CN117397014A/zh active Pending
- 2022-05-25 JP JP2023527605A patent/JPWO2022259868A1/ja active Pending
- 2022-05-25 WO PCT/JP2022/021356 patent/WO2022259868A1/ja active Application Filing
-
2023
- 2023-12-08 US US18/534,224 patent/US20240105424A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US20240105424A1 (en) | 2024-03-28 |
TW202308469A (zh) | 2023-02-16 |
KR20240017372A (ko) | 2024-02-07 |
WO2022259868A1 (ja) | 2022-12-15 |
CN117397014A (zh) | 2024-01-12 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240314 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240509 |