JPWO2022254838A1 - - Google Patents

Info

Publication number
JPWO2022254838A1
JPWO2022254838A1 JP2022538322A JP2022538322A JPWO2022254838A1 JP WO2022254838 A1 JPWO2022254838 A1 JP WO2022254838A1 JP 2022538322 A JP2022538322 A JP 2022538322A JP 2022538322 A JP2022538322 A JP 2022538322A JP WO2022254838 A1 JPWO2022254838 A1 JP WO2022254838A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022538322A
Other languages
Japanese (ja)
Other versions
JP7375937B2 (en
JPWO2022254838A5 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022254838A1 publication Critical patent/JPWO2022254838A1/ja
Publication of JPWO2022254838A5 publication Critical patent/JPWO2022254838A5/ja
Application granted granted Critical
Publication of JP7375937B2 publication Critical patent/JP7375937B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2022538322A 2021-06-03 2022-03-01 Semiconductor sensor and its manufacturing method Active JP7375937B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021093637 2021-06-03
JP2021093637 2021-06-03
PCT/JP2022/008619 WO2022254838A1 (en) 2021-06-03 2022-03-01 Semiconductor sensor and method for manufacturing same

Publications (3)

Publication Number Publication Date
JPWO2022254838A1 true JPWO2022254838A1 (en) 2022-12-08
JPWO2022254838A5 JPWO2022254838A5 (en) 2023-05-12
JP7375937B2 JP7375937B2 (en) 2023-11-08

Family

ID=84324168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022538322A Active JP7375937B2 (en) 2021-06-03 2022-03-01 Semiconductor sensor and its manufacturing method

Country Status (5)

Country Link
US (1) US20240145324A1 (en)
EP (1) EP4350308A1 (en)
JP (1) JP7375937B2 (en)
CN (1) CN117480365A (en)
WO (1) WO2022254838A1 (en)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04158583A (en) * 1990-10-22 1992-06-01 Matsushita Electric Works Ltd Infrared-ray detecting element
JPH09506712A (en) * 1993-12-13 1997-06-30 ハネウエル・インコーポレーテッド Integrated Silicon Vacuum Micro Package for Infrared Devices
JP2004093535A (en) * 2002-09-04 2004-03-25 Mitsubishi Electric Corp Thermal type infrared solid-state imaging device and its manufacturing method
JP2010216819A (en) * 2009-03-13 2010-09-30 Toshiba Corp Non-cooled infrared image sensor
JP2017203737A (en) * 2016-05-13 2017-11-16 三菱電機株式会社 Thermal infrared detector and method for manufacturing the thermal infrared detector
JP2019504298A (en) * 2015-11-27 2019-02-14 ハイマン・ゼンゾル・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Thermal infrared sensor array in wafer level package

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5701008A (en) * 1996-11-29 1997-12-23 He Holdings, Inc. Integrated infrared microlens and gas molecule getter grating in a vacuum package
FR2822541B1 (en) 2001-03-21 2003-10-03 Commissariat Energie Atomique METHODS AND DEVICES FOR MANUFACTURING RADIATION DETECTORS
JP3808092B2 (en) * 2003-08-08 2006-08-09 松下電器産業株式会社 Electronic device and manufacturing method thereof
JP4784399B2 (en) 2006-05-29 2011-10-05 日産自動車株式会社 Infrared sensor and manufacturing method thereof
FR2936868B1 (en) 2008-10-07 2011-02-18 Ulis MICRO-ENCAPSULATION THERMAL DETECTOR.
JP2011033393A (en) * 2009-07-30 2011-02-17 Ricoh Co Ltd Semiconductor device having membrane part, and method for manufacturing the semiconductor device
JP5853476B2 (en) * 2011-08-04 2016-02-09 セイコーエプソン株式会社 Infrared detector and electronic device
FR3048534A1 (en) * 2016-03-01 2017-09-08 Commissariat Energie Atomique SENSOR FOR THERMAL PATTERNS WITH BOLOMETERS UNDER CAPSULE (S).

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04158583A (en) * 1990-10-22 1992-06-01 Matsushita Electric Works Ltd Infrared-ray detecting element
JPH09506712A (en) * 1993-12-13 1997-06-30 ハネウエル・インコーポレーテッド Integrated Silicon Vacuum Micro Package for Infrared Devices
JP2004093535A (en) * 2002-09-04 2004-03-25 Mitsubishi Electric Corp Thermal type infrared solid-state imaging device and its manufacturing method
JP2010216819A (en) * 2009-03-13 2010-09-30 Toshiba Corp Non-cooled infrared image sensor
JP2019504298A (en) * 2015-11-27 2019-02-14 ハイマン・ゼンゾル・ゲゼルシャフト・ミト・ベシュレンクテル・ハフツング Thermal infrared sensor array in wafer level package
JP2017203737A (en) * 2016-05-13 2017-11-16 三菱電機株式会社 Thermal infrared detector and method for manufacturing the thermal infrared detector

Also Published As

Publication number Publication date
JP7375937B2 (en) 2023-11-08
EP4350308A1 (en) 2024-04-10
WO2022254838A1 (en) 2022-12-08
CN117480365A (en) 2024-01-30
US20240145324A1 (en) 2024-05-02

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