JPWO2022244837A5 - - Google Patents
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- JPWO2022244837A5 JPWO2022244837A5 JP2023522713A JP2023522713A JPWO2022244837A5 JP WO2022244837 A5 JPWO2022244837 A5 JP WO2022244837A5 JP 2023522713 A JP2023522713 A JP 2023522713A JP 2023522713 A JP2023522713 A JP 2023522713A JP WO2022244837 A5 JPWO2022244837 A5 JP WO2022244837A5
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- 238000000137 annealing Methods 0.000 claims 40
- 230000003287 optical effect Effects 0.000 claims 25
- 239000004065 semiconductor Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 13
- 239000012535 impurity Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 230000001678 irradiating effect Effects 0.000 claims 7
- 230000001681 protective effect Effects 0.000 claims 4
- 238000005224 laser annealing Methods 0.000 claims 1
Claims (10)
光学系から出射されたレーザ光を前記第１面に照射して、前記第１不純物領域をアニールする第１アニール工程とを備え、
前記レーザ光が前記第１面に形成するビームスポットの前記第１方向の第１幅は、前記ビームスポットの前記第２方向の第２幅よりも狭く、
前記第１面は、前記第１方向および前記第２方向の少なくともいずれかに並んで配置されており、かつ前記第１方向に前記第１幅を有しかつ前記第２方向に前記第２幅を有する複数の領域を有し、
前記第１アニール工程では、
前記複数の領域のうちの１つの領域に前記ビームスポットを形成する照射工程が複数回行われ、
前記複数回の照射工程の各々の間に、前記光学系に対して前記第１面を前記第１方向に前記第１幅だけ走査する第１工程と、前記第１工程完了後に前記光学系に対して前記第１面を前記第２方向に前記第２幅だけ走査する第２工程が行われ、
前記第１アニール工程が２回繰り返し行われ、
２回目の前記第１アニール工程での前記レーザ光の遅延時間は、１回目の前記第１アニール工程での前記レーザ光の遅延時間とは異なる、半導体装置の製造方法。 preparing a semiconductor substrate having a first surface extending along a first direction and a second direction orthogonal to the first direction and having a first impurity region formed thereon;
a first annealing step of irradiating the first surface with a laser beam emitted from an optical system to anneal the first impurity region;
a first width in the first direction of the beam spot formed on the first surface by the laser light is narrower than a second width in the second direction of the beam spot;
The first surfaces are arranged side by side in at least one of the first direction and the second direction, and have the first width in the first direction and the second width in the second direction. having a plurality of regions with
In the first annealing step,
The irradiation step of forming the beam spot in one of the plurality of regions is performed multiple times,
Between each of the plurality of irradiation steps, a first step of scanning the first surface in the first direction with respect to the optical system by the first width, and after the completion of the first step, the optical system On the other hand, a second step of scanning the first surface by the second width in the second direction is performed ,
The first annealing step is repeated twice,
The method for manufacturing a semiconductor device, wherein the delay time of the laser light in the first annealing step of the second time is different from the delay time of the laser light in the first annealing step of the first time.
前記複数回の照射工程は、前記第１群の領域のうちの１つの領域に前記ビームスポットを形成する第１群の照射工程と、前記第２群の領域のうちの１つの領域に前記ビームスポットを形成する第２群の照射工程とを含み、
前記第１アニール工程では、前記第１群の照射工程の各々が前記第１工程を挟んで繰り返し行われ、前記ビームスポットが前記第１群の領域のうち前記第１方向の第１端から第２端まで順次形成され、
その後、前記第２工程が行われ、
その後、前記第２群の照射工程の各々が前記光学系に対して前記第１面を前記第１方向とは逆方向に前記第１幅だけ走査する第３工程を挟んで行われ、前記ビームスポットが前記第２群の領域のうち前記第１方向の第３端から第４端まで順次形成される、請求項１に記載の半導体装置の製造方法。 The plurality of regions includes a first group of regions arranged side by side in the first direction and a first group of regions arranged side by side in the first direction and arranged side by side with the first group of regions in the second direction. and a second group of regions arranged in
The plurality of irradiation steps include a first group irradiation step of forming the beam spot in one region of the first group of regions, and a first group of irradiation steps of forming the beam spot in one region of the second group of regions. A second group of irradiation steps for forming a spot,
In the first annealing step, each of the irradiation steps of the first group is repeatedly performed with the first step interposed therebetween, and the beam spot is radiated from the first end in the first direction to the first portion of the region of the first group. are formed sequentially up to two ends,
After that, the second step is performed,
Thereafter, each of the irradiation steps of the second group is performed with a third step of scanning the first surface by the first width in a direction opposite to the first direction with respect to the optical system. 2. The method of manufacturing a semiconductor device according to claim 1, wherein spots are sequentially formed in said second group of regions from a third end to a fourth end in said first direction.
３回目の前記第１アニール工程での前記レーザ光の強度は、前記２回目の第１アニール工程での前記レーザ光の強度以下である、請求項４に記載の半導体装置の製造方法。 The first annealing step is repeated three times,
5. The method of manufacturing a semiconductor device according to claim 4, wherein the intensity of said laser light in said first annealing step for a third time is equal to or less than the intensity of said laser light in said first annealing step for said second time.
光学系から出射されたレーザ光を前記第１面に照射して、前記第１不純物領域をアニールする第１アニール工程とを備え、
前記レーザ光が前記第１面に形成するビームスポットの前記第１方向の第１幅は、前記ビームスポットの前記第２方向の第２幅よりも狭く、
前記第１面は、前記第１方向および前記第２方向の少なくともいずれかに並んで配置されており、かつ前記第１方向に前記第１幅を有しかつ前記第２方向に前記第２幅を有する複数の領域を有し、
前記第１アニール工程では、
前記複数の領域のうちの１つの領域に前記ビームスポットを形成する照射工程が複数回行われ、
前記複数回の照射工程の各々の間に、前記光学系に対して前記第１面を前記第１方向に前記第１幅だけ走査する第１工程と、前記第１工程完了後に前記光学系に対して前記第１面を前記第２方向に前記第２幅だけ走査する第２工程が行われ、
前記第１アニール工程が２回繰り返し行われ、
２回目の前記第１アニール工程での前記レーザ光の遅延時間は、１回目の前記第１アニール工程での前記レーザ光の遅延時間とは異なり、かつ２回目の前記第１アニール工程での前記レーザ光の強度は、１回目の前記第１アニール工程での前記レーザ光の強度と同等である、半導体装置の製造方法。 preparing a semiconductor substrate having a first surface extending along a first direction and a second direction orthogonal to the first direction and having a first impurity region formed thereon;
a first annealing step of irradiating the first surface with a laser beam emitted from an optical system to anneal the first impurity region;
a first width in the first direction of the beam spot formed on the first surface by the laser light is narrower than a second width in the second direction of the beam spot;
The first surfaces are arranged side by side in at least one of the first direction and the second direction, and have the first width in the first direction and the second width in the second direction. having a plurality of regions with
In the first annealing step,
The irradiation step of forming the beam spot in one of the plurality of regions is performed multiple times,
Between each of the plurality of irradiation steps, a first step of scanning the first surface in the first direction with respect to the optical system by the first width, and after the completion of the first step, the optical system On the other hand, a second step of scanning the first surface by the second width in the second direction is performed,
The first annealing step is repeated twice,
The delay time of the laser light in the second first annealing process is different from the delay time of the laser light in the first annealing process, and the delay time of the laser light in the second first annealing process is different from that in the first annealing process. The method for manufacturing a semiconductor device, wherein the intensity of the laser light is the same as the intensity of the laser light in the first annealing step of the first time .
前記レーザ光を前記第２不純物領域に照射して、前記第２不純物領域をアニールする第２アニール工程をさらに備え、
前記第２アニール工程では、
前記複数回の照射工程と、
前記複数回の照射工程の各々の間に、前記第１工程、または前記第２工程が行われ、
前記第２アニール工程が複数回繰り返し行われ、
２回目の前記第２アニール工程での前記レーザ光の強度は、１回目の前記第２アニール工程での前記レーザ光の強度以下である、請求項１～６のいずれか１項に記載の半導体装置の製造方法。 In the preparing step, the semiconductor substrate further formed with a second impurity region is prepared;
further comprising a second annealing step of irradiating the second impurity region with the laser light to anneal the second impurity region;
In the second annealing step,
The multiple irradiation steps;
Between each of the plurality of irradiation steps, the first step or the second step is performed,
The second annealing step is repeated multiple times,
The semiconductor according to any one of claims 1 to 6, wherein the intensity of said laser light in said second annealing step for a second time is equal to or less than the intensity of said laser light in said second annealing step for a first time. Method of manufacturing the device.
前記準備する工程後、前記第１アニール工程前に、前記第２面上を保護する保護膜を形成する工程と、
前記第１不純物領域をアニールした後に、前記保護膜を除去する工程とをさらに備え、
前記第１アニール工程での前記保護膜の到達温度は、前記保護膜の耐熱温度未満である、請求項１～６のいずれか１項に記載の半導体装置の製造方法。 In the preparing step, the semiconductor substrate having a second surface opposite to the first surface is prepared;
forming a protective film for protecting the second surface after the preparing step and before the first annealing step;
removing the protective film after annealing the first impurity region;
7. The method of manufacturing a semiconductor device according to claim 1 , wherein the temperature reached by said protective film in said first annealing step is lower than the heat resistance temperature of said protective film.
前記保持部に保持された前記半導体基板の前記第１面にレーザ光を照射し、前記第１方向および前記第２方向の少なくともいずれかに並んで配置された前記第１面の複数の領域のうちの１つの領域にビームスポットを形成する光学系と、
前記半導体基板および前記光学系の一方を他方に対して走査する走査部とを備え、
前記光学系は、前記第１方向の第１幅が前記第２方向の第２幅よりも狭い前記ビームスポットを前記第１面に形成するように設けられており、
前記走査部は、前記光学系が１つの前記ビームスポットを形成した後前記光学系に対して前記第１面を前記第１方向に前記第１幅だけ走査し、前記光学系に対して前記第１面を前記第１方向に前記第１幅だけ走査した後前記第１面を前記光学系に対して前記第１面を前記第２方向に前記第２幅だけ走査し、
前記光学系から前記第１面に照射される前記レーザ光の遅延時間を制御する制御部をさらに備え、
前記制御部は、前記レーザ光を前記光学系から前記第１面に照射して、前記第１不純物領域をアニールする第１アニール工程が２回繰り返し行われたときに、２回目の前記第１アニール工程での前記レーザ光の遅延時間が１回目の前記第１アニール工程での前記レーザ光の遅延時間とは異なるように、前記遅延時間を制御する、レーザアニール装置。 a holding portion for holding a semiconductor substrate having a first surface extending along a first direction and a second direction orthogonal to the first direction and having a first impurity region formed thereon;
irradiating the first surface of the semiconductor substrate held by the holding portion with a laser beam to irradiate a plurality of regions of the first surface arranged side by side in at least one of the first direction and the second direction; an optical system that forms a beam spot in one region of the
a scanning unit that scans one of the semiconductor substrate and the optical system with respect to the other;
The optical system is provided so as to form the beam spot on the first surface, wherein a first width in the first direction is narrower than a second width in the second direction,
The scanning unit scans the first surface in the first direction with respect to the optical system by the first width after the optical system forms one beam spot, and scans the optical system with the first width. after scanning one surface by the first width in the first direction, scanning the first surface with respect to the optical system by the second width in the second direction ;
further comprising a control unit that controls the delay time of the laser light irradiated from the optical system to the first surface,
When the first annealing step of irradiating the first surface with the laser light from the optical system to anneal the first impurity region is repeated twice, the control unit controls the second annealing process, when the first annealing step is performed twice. A laser annealing apparatus for controlling the delay time such that the delay time of the laser light in the annealing process is different from the delay time of the laser light in the first annealing process for the first time.
前記保持部に保持された前記半導体基板の前記第１面にレーザ光を照射し、前記第１方向および前記第２方向の少なくともいずれかに並んで配置された前記第１面の複数の領域のうちの１つの領域にビームスポットを形成する光学系と、irradiating the first surface of the semiconductor substrate held by the holding portion with a laser beam to irradiate a plurality of regions of the first surface arranged side by side in at least one of the first direction and the second direction; an optical system that forms a beam spot in one region of the
前記半導体基板および前記光学系の一方を他方に対して走査する走査部とを備え、a scanning unit that scans one of the semiconductor substrate and the optical system with respect to the other;
前記光学系は、前記第１方向の第１幅が前記第２方向の第２幅よりも狭い前記ビームスポットを前記第１面に形成するように設けられており、The optical system is provided so as to form the beam spot on the first surface, wherein a first width in the first direction is narrower than a second width in the second direction,
前記走査部は、前記光学系が１つの前記ビームスポットを形成した後前記光学系に対して前記第１面を前記第１方向に前記第１幅だけ走査し、前記光学系に対して前記第１面を前記第１方向に前記第１幅だけ走査した後前記第１面を前記光学系に対して前記第１面を前記第２方向に前記第２幅だけ走査し、The scanning unit scans the first surface in the first direction with respect to the optical system by the first width after the optical system forms one beam spot, and scans the optical system with the first width. after scanning one surface by the first width in the first direction, scanning the first surface with respect to the optical system by the second width in the second direction;
前記光学系から前記第１面に照射される前記レーザ光の遅延時間と、前記レーザ光の強度とを制御する制御部をさらに備え、further comprising a control unit that controls the delay time of the laser light irradiated from the optical system to the first surface and the intensity of the laser light,
前記制御部は、前記レーザ光を前記光学系から前記第１面に照射して、前記第１不純物領域をアニールする第１アニール工程が２回繰り返し行われたときに、２回目の前記第１アニール工程での前記レーザ光の遅延時間が１回目の前記第１アニール工程での前記レーザ光の遅延時間とは異なるように、前記遅延時間を制御するとともに、２回目の前記第１アニール工程での前記レーザ光の強度が１回目の前記第１アニール工程での前記レーザ光の強度と同等となるように、前記レーザ光の強度を制御する、レーザアニール装置。 When the first annealing step of irradiating the first surface with the laser light from the optical system to anneal the first impurity region is repeated twice, the control unit controls the second annealing process, when the first annealing step is performed twice. The delay time is controlled so that the delay time of the laser light in the annealing process is different from the delay time of the laser light in the first annealing process for the first time, and in the second first annealing process, and controlling the intensity of the laser beam so that the intensity of the laser beam in the above is equal to the intensity of the laser beam in the first annealing step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021086027 | 2021-05-21 | ||
| PCT/JP2022/020813 WO2022244837A1 (en) | 2021-05-21 | 2022-05-19 | Semiconductor device manufacturing method and laser annealing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022244837A1 JPWO2022244837A1 (en) | 2022-11-24 |
| JPWO2022244837A5 true JPWO2022244837A5 (en) | 2023-08-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023522713A Pending JPWO2022244837A1 (en) | 2021-05-21 | 2022-05-19 |
Country Status (2)
| Country | Link |
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| JP (1) | JPWO2022244837A1 (en) |
| WO (1) | WO2022244837A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3410989B2 (en) * | 1999-08-02 | 2003-05-26 | 住友重機械工業株式会社 | Precision laser irradiation apparatus and control method |
| JP2003045820A (en) * | 2001-07-30 | 2003-02-14 | Semiconductor Energy Lab Co Ltd | Laser irradiation apparatus, and method, and method of manufacturing semiconductor device |
| JP5517832B2 (en) * | 2010-08-20 | 2014-06-11 | 住友重機械工業株式会社 | Laser annealing apparatus and laser annealing method |
| JP5660880B2 (en) * | 2010-12-20 | 2015-01-28 | 住友重機械工業株式会社 | Laser annealing method |
| WO2019116826A1 (en) * | 2017-12-15 | 2019-06-20 | 住友重機械工業株式会社 | Chuck plate, annealing device, and annealing method |
| JP6864158B2 (en) * | 2018-06-22 | 2021-04-28 | 住友重機械工業株式会社 | Laser annealing method and laser annealing method for semiconductor devices |
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- 2022-05-19 WO PCT/JP2022/020813 patent/WO2022244837A1/en unknown
- 2022-05-19 JP JP2023522713A patent/JPWO2022244837A1/ja active Pending
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