JPWO2022201771A1 - - Google Patents
Info
- Publication number
- JPWO2022201771A1 JPWO2022201771A1 JP2023508668A JP2023508668A JPWO2022201771A1 JP WO2022201771 A1 JPWO2022201771 A1 JP WO2022201771A1 JP 2023508668 A JP2023508668 A JP 2023508668A JP 2023508668 A JP2023508668 A JP 2023508668A JP WO2022201771 A1 JPWO2022201771 A1 JP WO2022201771A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021051410 | 2021-03-25 | ||
| PCT/JP2022/001107 WO2022201771A1 (ja) | 2021-03-25 | 2022-01-14 | 半導体レーザ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022201771A1 true JPWO2022201771A1 (ja) | 2022-09-29 |
Family
ID=83396746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023508668A Pending JPWO2022201771A1 (ja) | 2021-03-25 | 2022-01-14 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240162686A1 (ja) |
| JP (1) | JPWO2022201771A1 (ja) |
| CN (1) | CN116998073A (ja) |
| WO (1) | WO2022201771A1 (ja) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3031415B1 (ja) * | 1998-10-06 | 2000-04-10 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
| JP5214844B2 (ja) * | 2005-03-29 | 2013-06-19 | 日本オクラロ株式会社 | 光半導体装置 |
| JP2010238802A (ja) * | 2009-03-30 | 2010-10-21 | Showa Denko Kk | 半導体発光素子、電極構造、半導体発光素子の製造方法、電極構造の製造方法 |
| JP5425172B2 (ja) * | 2011-12-15 | 2014-02-26 | ソニー株式会社 | 半導体レーザ素子及び半導体レーザ素子の製造方法 |
| JP2015023175A (ja) * | 2013-07-19 | 2015-02-02 | ソニー株式会社 | 半導体発光素子および半導体発光装置 |
| TWI607612B (zh) * | 2016-11-17 | 2017-12-01 | 錼創科技股份有限公司 | 半導體雷射元件 |
| JP2020155715A (ja) * | 2019-03-22 | 2020-09-24 | 住友電気工業株式会社 | 光半導体素子およびその製造方法 |
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2022
- 2022-01-14 WO PCT/JP2022/001107 patent/WO2022201771A1/ja active Application Filing
- 2022-01-14 CN CN202280022440.XA patent/CN116998073A/zh active Pending
- 2022-01-14 JP JP2023508668A patent/JPWO2022201771A1/ja active Pending
- 2022-01-14 US US18/550,808 patent/US20240162686A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| CN116998073A (zh) | 2023-11-03 |
| US20240162686A1 (en) | 2024-05-16 |
| WO2022201771A1 (ja) | 2022-09-29 |