JPWO2022190269A1 - - Google Patents
Info
- Publication number
- JPWO2022190269A1 JPWO2022190269A1 JP2023504972A JP2023504972A JPWO2022190269A1 JP WO2022190269 A1 JPWO2022190269 A1 JP WO2022190269A1 JP 2023504972 A JP2023504972 A JP 2023504972A JP 2023504972 A JP2023504972 A JP 2023504972A JP WO2022190269 A1 JPWO2022190269 A1 JP WO2022190269A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2021/009567 WO2022190269A1 (ja) | 2021-03-10 | 2021-03-10 | 炭化珪素半導体装置とその製造方法、および、電力変換装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022190269A1 true JPWO2022190269A1 (ja) | 2022-09-15 |
| JPWO2022190269A5 JPWO2022190269A5 (ja) | 2023-07-10 |
Family
ID=83227614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023504972A Pending JPWO2022190269A1 (ja) | 2021-03-10 | 2021-03-10 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2022190269A1 (ja) |
| WO (1) | WO2022190269A1 (ja) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094433A (ja) * | 2007-10-12 | 2009-04-30 | National Institute Of Advanced Industrial & Technology | 炭化珪素装置 |
| JP2010068008A (ja) * | 2009-12-24 | 2010-03-25 | Mitsubishi Electric Corp | 炭化珪素ショットキバリアダイオードの製造方法 |
| JP6930197B2 (ja) * | 2017-04-20 | 2021-09-01 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| JP7176239B2 (ja) * | 2018-06-14 | 2022-11-22 | 富士電機株式会社 | 半導体装置 |
| WO2021014570A1 (ja) * | 2019-07-23 | 2021-01-28 | 三菱電機株式会社 | 炭化珪素半導体装置、電力変換装置および炭化珪素半導体装置の製造方法 |
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2021
- 2021-03-10 JP JP2023504972A patent/JPWO2022190269A1/ja active Pending
- 2021-03-10 WO PCT/JP2021/009567 patent/WO2022190269A1/ja active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022190269A1 (ja) | 2022-09-15 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230421 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230421 |