JPWO2022181432A1 - - Google Patents
Info
- Publication number
- JPWO2022181432A1 JPWO2022181432A1 JP2023502328A JP2023502328A JPWO2022181432A1 JP WO2022181432 A1 JPWO2022181432 A1 JP WO2022181432A1 JP 2023502328 A JP2023502328 A JP 2023502328A JP 2023502328 A JP2023502328 A JP 2023502328A JP WO2022181432 A1 JPWO2022181432 A1 JP WO2022181432A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2015—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate the substrate being of crystalline semiconductor material, e.g. lattice adaptation, heteroepitaxy
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021028698 | 2021-02-25 | ||
PCT/JP2022/006333 WO2022181432A1 (ja) | 2021-02-25 | 2022-02-17 | 希土類添加窒化物半導体素子とその製造方法、半導体led、半導体レーザー |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2022181432A1 true JPWO2022181432A1 (ja) | 2022-09-01 |
Family
ID=83049344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023502328A Pending JPWO2022181432A1 (ja) | 2021-02-25 | 2022-02-17 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JPWO2022181432A1 (ja) |
WO (1) | WO2022181432A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4292600B2 (ja) * | 1998-09-11 | 2009-07-08 | ソニー株式会社 | GaN系半導体発光素子およびその製造方法 |
JP5388041B2 (ja) * | 2009-05-07 | 2014-01-15 | 国立大学法人大阪大学 | 赤色発光半導体素子および赤色発光半導体素子の製造方法 |
JP6450061B2 (ja) * | 2011-12-07 | 2019-01-09 | 国立大学法人大阪大学 | 赤色発光半導体素子とその製造方法 |
WO2014030516A1 (ja) * | 2012-08-23 | 2014-02-27 | 国立大学法人大阪大学 | 窒化物半導体素子用基板とその製造方法、および赤色発光半導体素子とその製造方法 |
JP6222684B2 (ja) * | 2013-03-08 | 2017-11-01 | 国立大学法人大阪大学 | 赤色発光半導体素子とその製造方法 |
TWI716986B (zh) * | 2018-09-03 | 2021-01-21 | 國立大學法人大阪大學 | 氮化物半導體裝置與其基板及添加稀土類元素之氮化物層的形成方法,以及紅色發光裝置 |
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2022
- 2022-02-17 WO PCT/JP2022/006333 patent/WO2022181432A1/ja active Application Filing
- 2022-02-17 JP JP2023502328A patent/JPWO2022181432A1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2022181432A1 (ja) | 2022-09-01 |