JPWO2022138050A1 - - Google Patents

Info

Publication number
JPWO2022138050A1
JPWO2022138050A1 JP2022572048A JP2022572048A JPWO2022138050A1 JP WO2022138050 A1 JPWO2022138050 A1 JP WO2022138050A1 JP 2022572048 A JP2022572048 A JP 2022572048A JP 2022572048 A JP2022572048 A JP 2022572048A JP WO2022138050 A1 JPWO2022138050 A1 JP WO2022138050A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022572048A
Other languages
Japanese (ja)
Other versions
JPWO2022138050A5 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2022138050A1 publication Critical patent/JPWO2022138050A1/ja
Publication of JPWO2022138050A5 publication Critical patent/JPWO2022138050A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/30—Transforming light or analogous information into electric information
JP2022572048A 2020-12-24 2021-12-02 Pending JPWO2022138050A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020214604 2020-12-24
PCT/JP2021/044286 WO2022138050A1 (en) 2020-12-24 2021-12-02 Radiation detection sensor and radiation image detector

Publications (2)

Publication Number Publication Date
JPWO2022138050A1 true JPWO2022138050A1 (en) 2022-06-30
JPWO2022138050A5 JPWO2022138050A5 (en) 2023-11-13

Family

ID=82159486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022572048A Pending JPWO2022138050A1 (en) 2020-12-24 2021-12-02

Country Status (2)

Country Link
JP (1) JPWO2022138050A1 (en)
WO (1) WO2022138050A1 (en)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08247843A (en) * 1995-03-09 1996-09-27 Nikon Corp Pyroelectric type infrared-ray solid state imaging device and its manufacture
JP2002368231A (en) * 2001-06-08 2002-12-20 Sanyo Electric Co Ltd Semiconductor device and manufacturing method therefor
CN101488507B (en) * 2002-08-09 2011-04-06 浜松光子学株式会社 Photodiode array, method of manufacturing the same, and radiation detector
US6969897B2 (en) * 2002-12-10 2005-11-29 Kim Ii John Optoelectronic devices employing fibers for light collection and emission
JP2005217188A (en) * 2004-01-29 2005-08-11 Hamamatsu Photonics Kk Semiconductor photodetector and manufacturing method therefor
US7663288B2 (en) * 2005-08-25 2010-02-16 Cornell Research Foundation, Inc. Betavoltaic cell
US7525170B2 (en) * 2006-10-04 2009-04-28 International Business Machines Corporation Pillar P-i-n semiconductor diodes
US9478685B2 (en) * 2014-06-23 2016-10-25 Zena Technologies, Inc. Vertical pillar structured infrared detector and fabrication method for the same
US9645262B2 (en) * 2014-11-26 2017-05-09 Lawrence Livermore National Security, Llc Capacitance reduction for pillar structured devices

Also Published As

Publication number Publication date
WO2022138050A1 (en) 2022-06-30

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