JPWO2022131084A1 - - Google Patents
Info
- Publication number
- JPWO2022131084A1 JPWO2022131084A1 JP2022569898A JP2022569898A JPWO2022131084A1 JP WO2022131084 A1 JPWO2022131084 A1 JP WO2022131084A1 JP 2022569898 A JP2022569898 A JP 2022569898A JP 2022569898 A JP2022569898 A JP 2022569898A JP WO2022131084 A1 JPWO2022131084 A1 JP WO2022131084A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020210100 | 2020-12-18 | ||
| PCT/JP2021/044984 WO2022131084A1 (en) | 2020-12-18 | 2021-12-07 | Silicon carbide semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022131084A1 true JPWO2022131084A1 (en) | 2022-06-23 |
Family
ID=82057748
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022569898A Pending JPWO2022131084A1 (en) | 2020-12-18 | 2021-12-07 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPWO2022131084A1 (en) |
| WO (1) | WO2022131084A1 (en) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016002766A1 (en) * | 2014-06-30 | 2016-01-07 | 国立研究開発法人産業技術総合研究所 | Silicon carbide semiconductor device and production method for same |
| JP6587265B2 (en) * | 2016-04-14 | 2019-10-09 | 住友電気工業株式会社 | Silicon carbide semiconductor device and manufacturing method thereof |
| CN111670502A (en) * | 2018-02-06 | 2020-09-15 | 住友电气工业株式会社 | Silicon carbide semiconductor device |
| US11233125B2 (en) * | 2018-08-09 | 2022-01-25 | Sumitomo Electric Industries, Ltd. | Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device |
| JP2020035807A (en) * | 2018-08-28 | 2020-03-05 | 住友電気工業株式会社 | Method of manufacturing silicon carbide semiconductor device |
| JP7287405B2 (en) * | 2019-02-04 | 2023-06-06 | 住友電気工業株式会社 | Silicon carbide semiconductor device |
-
2021
- 2021-12-07 JP JP2022569898A patent/JPWO2022131084A1/ja active Pending
- 2021-12-07 WO PCT/JP2021/044984 patent/WO2022131084A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022131084A1 (en) | 2022-06-23 |