JPWO2022084795A1 - - Google Patents
Info
- Publication number
- JPWO2022084795A1 JPWO2022084795A1 JP2022557215A JP2022557215A JPWO2022084795A1 JP WO2022084795 A1 JPWO2022084795 A1 JP WO2022084795A1 JP 2022557215 A JP2022557215 A JP 2022557215A JP 2022557215 A JP2022557215 A JP 2022557215A JP WO2022084795 A1 JPWO2022084795 A1 JP WO2022084795A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G2/00—Details of capacitors not covered by a single one of groups H01G4/00-H01G11/00
- H01G2/10—Housing; Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/20—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the three-dimensional arrangements, e.g. with cells on different height levels
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020176335 | 2020-10-20 | ||
PCT/IB2021/059272 WO2022084795A1 (ja) | 2020-10-20 | 2021-10-11 | 強誘電体デバイス、および半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPWO2022084795A1 true JPWO2022084795A1 (ja) | 2022-04-28 |
Family
ID=81289710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022557215A Pending JPWO2022084795A1 (ja) | 2020-10-20 | 2021-10-11 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20230389332A1 (ja) |
JP (1) | JPWO2022084795A1 (ja) |
KR (1) | KR20230091923A (ja) |
CN (1) | CN116803231A (ja) |
WO (1) | WO2022084795A1 (ja) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6635528B2 (en) * | 1999-12-22 | 2003-10-21 | Texas Instruments Incorporated | Method of planarizing a conductive plug situated under a ferroelectric capacitor |
JP2010251590A (ja) * | 2009-04-17 | 2010-11-04 | Seiko Epson Corp | 半導体装置とその製造方法 |
JP5633346B2 (ja) * | 2009-12-25 | 2014-12-03 | 株式会社リコー | 電界効果型トランジスタ、半導体メモリ、表示素子、画像表示装置及びシステム |
JP2017123388A (ja) * | 2016-01-06 | 2017-07-13 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2019160841A (ja) * | 2018-03-07 | 2019-09-19 | ソニーセミコンダクタソリューションズ株式会社 | 半導体記憶装置、半導体記憶装置の製造方法及び電子機器 |
JP7360004B2 (ja) * | 2019-02-01 | 2023-10-12 | 富士通セミコンダクターメモリソリューション株式会社 | 半導体装置の製造方法及び半導体装置 |
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2021
- 2021-10-11 KR KR1020237015842A patent/KR20230091923A/ko unknown
- 2021-10-11 US US18/032,651 patent/US20230389332A1/en active Pending
- 2021-10-11 WO PCT/IB2021/059272 patent/WO2022084795A1/ja active Application Filing
- 2021-10-11 CN CN202180068990.0A patent/CN116803231A/zh active Pending
- 2021-10-11 JP JP2022557215A patent/JPWO2022084795A1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2022084795A1 (ja) | 2022-04-28 |
US20230389332A1 (en) | 2023-11-30 |
KR20230091923A (ko) | 2023-06-23 |
CN116803231A (zh) | 2023-09-22 |