JPWO2021236886A5 - - Google Patents

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Publication number
JPWO2021236886A5
JPWO2021236886A5 JP2022569469A JP2022569469A JPWO2021236886A5 JP WO2021236886 A5 JPWO2021236886 A5 JP WO2021236886A5 JP 2022569469 A JP2022569469 A JP 2022569469A JP 2022569469 A JP2022569469 A JP 2022569469A JP WO2021236886 A5 JPWO2021236886 A5 JP WO2021236886A5
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JP
Japan
Prior art keywords
metal
barrier layer
functional group
deposition
layer precursor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022569469A
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English (en)
Japanese (ja)
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JP2023526789A (ja
Publication date
Application filed filed Critical
Priority claimed from PCT/US2021/033329 external-priority patent/WO2021236886A1/en
Publication of JP2023526789A publication Critical patent/JP2023526789A/ja
Publication of JPWO2021236886A5 publication Critical patent/JPWO2021236886A5/ja
Pending legal-status Critical Current

Links

JP2022569469A 2020-05-22 2021-05-20 誘電体表面の湿式官能化 Pending JP2023526789A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202062704692P 2020-05-22 2020-05-22
US62/704,692 2020-05-22
PCT/US2021/033329 WO2021236886A1 (en) 2020-05-22 2021-05-20 Wet functionalization of dielectric surfaces

Publications (2)

Publication Number Publication Date
JP2023526789A JP2023526789A (ja) 2023-06-23
JPWO2021236886A5 true JPWO2021236886A5 (zh) 2024-05-27

Family

ID=78707622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022569469A Pending JP2023526789A (ja) 2020-05-22 2021-05-20 誘電体表面の湿式官能化

Country Status (6)

Country Link
US (1) US20230197509A1 (zh)
JP (1) JP2023526789A (zh)
KR (1) KR20230013064A (zh)
CN (1) CN115769362A (zh)
TW (1) TW202215510A (zh)
WO (1) WO2021236886A1 (zh)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4245996B2 (ja) * 2003-07-07 2009-04-02 株式会社荏原製作所 無電解めっきによるキャップ膜の形成方法およびこれに用いる装置
US7365011B2 (en) * 2005-11-07 2008-04-29 Intel Corporation Catalytic nucleation monolayer for metal seed layers
US7786011B2 (en) * 2007-01-30 2010-08-31 Lam Research Corporation Composition and methods for forming metal films on semiconductor substrates using supercritical solvents
US8895441B2 (en) * 2012-02-24 2014-11-25 Lam Research Corporation Methods and materials for anchoring gapfill metals
CN107438775B (zh) * 2015-01-30 2022-01-21 特里纳米克斯股份有限公司 用于至少一个对象的光学检测的检测器

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