JPWO2021202171A5 - - Google Patents
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- JPWO2021202171A5 JPWO2021202171A5 JP2022559850A JP2022559850A JPWO2021202171A5 JP WO2021202171 A5 JPWO2021202171 A5 JP WO2021202171A5 JP 2022559850 A JP2022559850 A JP 2022559850A JP 2022559850 A JP2022559850 A JP 2022559850A JP WO2021202171 A5 JPWO2021202171 A5 JP WO2021202171A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- supports
- pedestal
- wavelength
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
Description
いくつかの実施形態では、半導体処理チャンバ内で使用するための台座が提供されてもよい。台座は、上面及び上面と反対側の底面を有し、４００ｎｍ～８００ｎｍの範囲の波長を有する可視光を通す材料を含む窓と、３つ以上の基板支持体であって、各基板支持体は、４００ｎｍ～８００ｎｍの範囲の波長を有する可視光を通す材料を含み、窓、及び３つ以上の基板支持体によって支持される基板が非ゼロ距離だけオフセットされるように、基板を支持するように構成された基板支持面を有し、基板支持面上に位置付けられた基板の温度を検出するように構成された温度センサを有する、３つ以上の基板支持体と、を含んでもよい。 In some embodiments, a pedestal may be provided for use within a semiconductor processing chamber. The pedestal has a top surface and a bottom surface opposite the top surface, a window comprising a material transparent to visible light having a wavelength in the range of 400 nm to 800 nm, and three or more substrate supports, each substrate support , comprising a material transparent to visible light having a wavelength in the range of 400 nm to 800 nm, and supporting the substrate such that the substrate supported by the window and the three or more substrate supports is offset by a non-zero distance. and three or more substrate supports having configured substrate support surfaces and having temperature sensors configured to detect the temperature of a substrate positioned on the substrate support surfaces.
実装形態７７：半導体チャンバ内で使用するための台座であって、この台座は、上面及び上面と反対側の底面を有し、４００ｎｍ～８００ｎｍの範囲の波長を有する可視光を通す材料を含む窓と、３つ以上の基板支持体であって、各基板支持体は、４００ｎｍ～８００ｎｍの範囲の波長を有する可視光を通す材料を含み、窓、及び３つ以上の基板支持体によって支持される基板が非ゼロ距離だけオフセットされるように、基板を支持するように構成された基板支持面を有し、基板支持面上に位置付けられた基板の温度を検出するように構成された温度センサを有する、３つ以上の基板支持体と、を含む、台座。 Implementation form 77: A pedestal for use in a semiconductor chamber, the pedestal having a top surface and a bottom surface opposite the top surface, the window comprising a material transparent to visible light having a wavelength in the range of 400 nm to 800 nm. and three or more substrate supports, each substrate support comprising a material transparent to visible light having a wavelength in the range of 400 nm to 800 nm, supported by a window, and the three or more substrate supports. a substrate support surface configured to support the substrate such that the substrate is offset by a non-zero distance, and a temperature sensor configured to detect a temperature of the substrate positioned on the substrate support surface. and three or more substrate supports having.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063003721P | 2020-04-01 | 2020-04-01 | |
| US63/003,721 | 2020-04-01 | ||
| PCT/US2021/023701 WO2021202171A1 (en) | 2020-04-01 | 2021-03-23 | Rapid and precise temperature control for thermal etching |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023520217A JP2023520217A (en) | 2023-05-16 |
| JPWO2021202171A5 true JPWO2021202171A5 (en) | 2024-03-04 |
Family
ID=77930139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022559850A Pending JP2023520217A (en) | 2020-04-01 | 2021-03-23 | Rapid and accurate temperature control for thermal etching |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20230131233A1 (en) |
| JP (1) | JP2023520217A (en) |
| KR (1) | KR20220161467A (en) |
| CN (1) | CN115699287A (en) |
| TW (1) | TW202205485A (en) |
| WO (1) | WO2021202171A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7519425B2 (en) | 2022-02-21 | 2024-07-19 | 芝浦メカトロニクス株式会社 | Heat treatment apparatus and heat treatment method |
| KR20230125742A (en) * | 2022-02-21 | 2023-08-29 | 시바우라 메카트로닉스 가부시끼가이샤 | Heat treating device and heat treating method |
| CN116844993A (en) * | 2022-03-23 | 2023-10-03 | 无锡华瑛微电子技术有限公司 | Semiconductor processing apparatus and semiconductor processing system |
| WO2023192402A1 (en) * | 2022-03-31 | 2023-10-05 | Lam Research Corporation | Radiative heat windows and wafer support pads in vapor etch reactors |
| WO2023192405A1 (en) * | 2022-03-31 | 2023-10-05 | Lam Research Corporation | Dual sensor wafer temperature measurement system |
| WO2023205591A1 (en) * | 2022-04-19 | 2023-10-26 | Lam Research Corporation | Liquid-cooled optical window for semiconductor processing chamber |
| WO2024015197A1 (en) * | 2022-07-13 | 2024-01-18 | Lam Research Corporation | Led substrate heater for deposition applications |
| WO2024015196A1 (en) * | 2022-07-13 | 2024-01-18 | Lam Research Corporation | High-efficiency led substrate heater for deposition applications |
| WO2024049699A1 (en) * | 2022-08-31 | 2024-03-07 | Lam Research Corporation | Nitride thermal atomic layer etch |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7734439B2 (en) * | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
| JP2010034491A (en) * | 2008-06-25 | 2010-02-12 | Tokyo Electron Ltd | Annealing apparatus |
| US20120118225A1 (en) * | 2010-09-16 | 2012-05-17 | Applied Materials, Inc. | Epitaxial growth temperature control in led manufacture |
| KR102009864B1 (en) * | 2012-11-20 | 2019-08-12 | 주성엔지니어링(주) | Substrate processing apparatus |
| KR102078157B1 (en) * | 2018-04-16 | 2020-02-17 | 세메스 주식회사 | Substrate heating unit and substrate processing apparatus using the same |
-
2021
- 2021-03-23 US US17/995,032 patent/US20230131233A1/en active Pending
- 2021-03-23 JP JP2022559850A patent/JP2023520217A/en active Pending
- 2021-03-23 CN CN202180039609.8A patent/CN115699287A/en active Pending
- 2021-03-23 KR KR1020227038172A patent/KR20220161467A/en active Search and Examination
- 2021-03-23 WO PCT/US2021/023701 patent/WO2021202171A1/en active Application Filing
- 2021-03-30 TW TW110111486A patent/TW202205485A/en unknown
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