JPWO2021193480A1 - - Google Patents

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Publication number
JPWO2021193480A1
JPWO2021193480A1 JP2022510455A JP2022510455A JPWO2021193480A1 JP WO2021193480 A1 JPWO2021193480 A1 JP WO2021193480A1 JP 2022510455 A JP2022510455 A JP 2022510455A JP 2022510455 A JP2022510455 A JP 2022510455A JP WO2021193480 A1 JPWO2021193480 A1 JP WO2021193480A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2022510455A
Other versions
JPWO2021193480A5 (ja
JP7329679B2 (ja
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Publication of JPWO2021193480A1 publication Critical patent/JPWO2021193480A1/ja
Publication of JPWO2021193480A5 publication Critical patent/JPWO2021193480A5/ja
Application granted granted Critical
Publication of JP7329679B2 publication Critical patent/JP7329679B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
JP2022510455A 2020-03-26 2021-03-21 基板処理装置、半導体装置の製造方法およびプログラム Active JP7329679B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020056120 2020-03-26
JP2020056120 2020-03-26
PCT/JP2021/011557 WO2021193480A1 (ja) 2020-03-26 2021-03-21 基板処理装置、半導体装置の製造方法およびプログラム

Publications (3)

Publication Number Publication Date
JPWO2021193480A1 true JPWO2021193480A1 (ja) 2021-09-30
JPWO2021193480A5 JPWO2021193480A5 (ja) 2022-11-22
JP7329679B2 JP7329679B2 (ja) 2023-08-18

Family

ID=77891776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022510455A Active JP7329679B2 (ja) 2020-03-26 2021-03-21 基板処理装置、半導体装置の製造方法およびプログラム

Country Status (2)

Country Link
JP (1) JP7329679B2 (ja)
WO (1) WO2021193480A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086392A (ja) * 2004-09-17 2006-03-30 Tokyo Electron Ltd 半導体製造装置及びそのメンテナンス方法
JP2009016799A (ja) * 2007-06-07 2009-01-22 Hitachi Kokusai Electric Inc 基板処理装置
WO2017033979A1 (ja) * 2015-08-26 2017-03-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006086392A (ja) * 2004-09-17 2006-03-30 Tokyo Electron Ltd 半導体製造装置及びそのメンテナンス方法
JP2009016799A (ja) * 2007-06-07 2009-01-22 Hitachi Kokusai Electric Inc 基板処理装置
WO2017033979A1 (ja) * 2015-08-26 2017-03-02 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Also Published As

Publication number Publication date
WO2021193480A1 (ja) 2021-09-30
JP7329679B2 (ja) 2023-08-18

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