JPWO2021192810A1 - - Google Patents

Info

Publication number
JPWO2021192810A1
JPWO2021192810A1 JP2022509440A JP2022509440A JPWO2021192810A1 JP WO2021192810 A1 JPWO2021192810 A1 JP WO2021192810A1 JP 2022509440 A JP2022509440 A JP 2022509440A JP 2022509440 A JP2022509440 A JP 2022509440A JP WO2021192810 A1 JPWO2021192810 A1 JP WO2021192810A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022509440A
Other versions
JPWO2021192810A5 (ja
JP7289170B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021192810A1 publication Critical patent/JPWO2021192810A1/ja
Publication of JPWO2021192810A5 publication Critical patent/JPWO2021192810A5/ja
Application granted granted Critical
Publication of JP7289170B2 publication Critical patent/JP7289170B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32238—Windows
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32247—Resonators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32467—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
JP2022509440A 2020-03-23 2021-02-26 高周波反応処理装置および高周波反応処理システム Active JP7289170B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020051160 2020-03-23
JP2020051160 2020-03-23
PCT/JP2021/007258 WO2021192810A1 (ja) 2020-03-23 2021-02-26 高周波反応処理装置および高周波反応処理システム

Publications (3)

Publication Number Publication Date
JPWO2021192810A1 true JPWO2021192810A1 (ja) 2021-09-30
JPWO2021192810A5 JPWO2021192810A5 (ja) 2022-11-30
JP7289170B2 JP7289170B2 (ja) 2023-06-09

Family

ID=77890215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022509440A Active JP7289170B2 (ja) 2020-03-23 2021-02-26 高周波反応処理装置および高周波反応処理システム

Country Status (6)

Country Link
EP (1) EP4129504A4 (ja)
JP (1) JP7289170B2 (ja)
KR (1) KR20220157481A (ja)
CN (1) CN115336395A (ja)
IL (1) IL296588A (ja)
WO (1) WO2021192810A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291087A (ja) * 1993-04-01 1994-10-18 Hitachi Ltd 半導体集積回路装置の製造方法および製造装置
WO2003096769A1 (fr) * 2002-05-07 2003-11-20 Toshiyuki Takamatsu Systeme de traitement par reaction haute frequence
JP2005259633A (ja) * 2004-03-15 2005-09-22 Toshiyuki Takamatsu マイクロ波プラズマ放電処理装置
JP2017033749A (ja) * 2015-07-31 2017-02-09 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57171395A (en) 1981-04-15 1982-10-21 Nippon Musical Instruments Mfg Electronic musical instrument
DE19608949A1 (de) * 1996-03-08 1997-09-11 Ralf Dr Spitzl Vorrichtung zur Erzeugung von leistungsfähigen Mikrowellenplasmen
US20050212626A1 (en) * 2002-05-07 2005-09-29 Toshiyuki Takamatsu High frequency reaction processing system
JP7082556B2 (ja) 2018-09-28 2022-06-08 三和シヤッター工業株式会社 シャッター装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06291087A (ja) * 1993-04-01 1994-10-18 Hitachi Ltd 半導体集積回路装置の製造方法および製造装置
WO2003096769A1 (fr) * 2002-05-07 2003-11-20 Toshiyuki Takamatsu Systeme de traitement par reaction haute frequence
JP2005259633A (ja) * 2004-03-15 2005-09-22 Toshiyuki Takamatsu マイクロ波プラズマ放電処理装置
JP2017033749A (ja) * 2015-07-31 2017-02-09 東京エレクトロン株式会社 マイクロ波プラズマ源およびプラズマ処理装置

Also Published As

Publication number Publication date
EP4129504A1 (en) 2023-02-08
WO2021192810A1 (ja) 2021-09-30
IL296588A (en) 2022-11-01
CN115336395A (zh) 2022-11-11
KR20220157481A (ko) 2022-11-29
EP4129504A4 (en) 2024-04-03
JP7289170B2 (ja) 2023-06-09

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