JPWO2021192697A1 - - Google Patents
Info
- Publication number
- JPWO2021192697A1 JPWO2021192697A1 JP2022509384A JP2022509384A JPWO2021192697A1 JP WO2021192697 A1 JPWO2021192697 A1 JP WO2021192697A1 JP 2022509384 A JP2022509384 A JP 2022509384A JP 2022509384 A JP2022509384 A JP 2022509384A JP WO2021192697 A1 JPWO2021192697 A1 JP WO2021192697A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L3/00—Containers or dishes for laboratory use, e.g. laboratory glassware; Droppers
- B01L3/50—Containers for the purpose of retaining a material to be analysed, e.g. test tubes
- B01L3/502—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures
- B01L3/5027—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip
- B01L3/502707—Containers for the purpose of retaining a material to be analysed, e.g. test tubes with fluid transport, e.g. in multi-compartment structures by integrated microfluidic structures, i.e. dimensions of channels and chambers are such that surface tension forces are important, e.g. lab-on-a-chip characterised by the manufacture of the container or its components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2200/00—Solutions for specific problems relating to chemical or physical laboratory apparatus
- B01L2200/12—Specific details about manufacturing devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01L—CHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
- B01L2300/00—Additional constructional details
- B01L2300/08—Geometry, shape and general structure
- B01L2300/0887—Laminated structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Dispersion Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- Hematology (AREA)
- Clinical Laboratory Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Micromachines (AREA)
- ing And Chemical Polishing (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020055021 | 2020-03-25 | ||
JP2020055021 | 2020-03-25 | ||
PCT/JP2021/005059 WO2021192697A1 (ja) | 2020-03-25 | 2021-02-10 | 構造体の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021192697A1 true JPWO2021192697A1 (ja) | 2021-09-30 |
JP7307270B2 JP7307270B2 (ja) | 2023-07-11 |
Family
ID=77890042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2022509384A Active JP7307270B2 (ja) | 2020-03-25 | 2021-02-10 | 構造体の製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20220415664A1 (ja) |
JP (1) | JP7307270B2 (ja) |
CN (1) | CN115298804A (ja) |
WO (1) | WO2021192697A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016170727A1 (ja) * | 2015-04-20 | 2016-10-27 | 富士フイルム株式会社 | 構造物の製造方法 |
JP2017107011A (ja) * | 2015-12-08 | 2017-06-15 | リコーイメージング株式会社 | 光学部材及びそれを用いた機器 |
JP2019040980A (ja) * | 2017-08-24 | 2019-03-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
WO2019225518A1 (ja) * | 2018-05-22 | 2019-11-28 | 富士フイルム株式会社 | 凹凸構造付き基体の製造方法 |
-
2021
- 2021-02-10 JP JP2022509384A patent/JP7307270B2/ja active Active
- 2021-02-10 WO PCT/JP2021/005059 patent/WO2021192697A1/ja active Application Filing
- 2021-02-10 CN CN202180021607.6A patent/CN115298804A/zh active Pending
-
2022
- 2022-09-02 US US17/929,311 patent/US20220415664A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2016170727A1 (ja) * | 2015-04-20 | 2016-10-27 | 富士フイルム株式会社 | 構造物の製造方法 |
JP2017107011A (ja) * | 2015-12-08 | 2017-06-15 | リコーイメージング株式会社 | 光学部材及びそれを用いた機器 |
JP2019040980A (ja) * | 2017-08-24 | 2019-03-14 | 日機装株式会社 | 半導体発光素子および半導体発光素子の製造方法 |
WO2019225518A1 (ja) * | 2018-05-22 | 2019-11-28 | 富士フイルム株式会社 | 凹凸構造付き基体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2021192697A1 (ja) | 2021-09-30 |
US20220415664A1 (en) | 2022-12-29 |
JP7307270B2 (ja) | 2023-07-11 |
CN115298804A (zh) | 2022-11-04 |
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