JPWO2021172170A1 - - Google Patents

Info

Publication number
JPWO2021172170A1
JPWO2021172170A1 JP2022503313A JP2022503313A JPWO2021172170A1 JP WO2021172170 A1 JPWO2021172170 A1 JP WO2021172170A1 JP 2022503313 A JP2022503313 A JP 2022503313A JP 2022503313 A JP2022503313 A JP 2022503313A JP WO2021172170 A1 JPWO2021172170 A1 JP WO2021172170A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2022503313A
Other versions
JPWO2021172170A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021172170A1 publication Critical patent/JPWO2021172170A1/ja
Publication of JPWO2021172170A5 publication Critical patent/JPWO2021172170A5/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G11C7/222Clock generating, synchronizing or distributing circuits within memory device
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C8/00Arrangements for selecting an address in a digital store
    • G11C8/08Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Debugging And Monitoring (AREA)
JP2022503313A 2020-02-28 2021-02-18 Pending JPWO2021172170A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020033160 2020-02-28
PCT/JP2021/006183 WO2021172170A1 (ja) 2020-02-28 2021-02-18 ランダムアクセス型メモリ回路及びメモリシステム

Publications (2)

Publication Number Publication Date
JPWO2021172170A1 true JPWO2021172170A1 (ja) 2021-09-02
JPWO2021172170A5 JPWO2021172170A5 (ja) 2022-10-26

Family

ID=77490978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022503313A Pending JPWO2021172170A1 (ja) 2020-02-28 2021-02-18

Country Status (5)

Country Link
US (1) US11978529B2 (ja)
JP (1) JPWO2021172170A1 (ja)
KR (1) KR20220121868A (ja)
CN (1) CN115176311A (ja)
WO (1) WO2021172170A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4469319B2 (ja) 2005-06-17 2010-05-26 シャープ株式会社 半導体記憶装置
US9236102B2 (en) 2012-10-12 2016-01-12 Micron Technology, Inc. Apparatuses, circuits, and methods for biasing signal lines
KR102116671B1 (ko) 2014-07-30 2020-06-01 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 워드 라인 구동 방법

Also Published As

Publication number Publication date
US11978529B2 (en) 2024-05-07
CN115176311A (zh) 2022-10-11
WO2021172170A1 (ja) 2021-09-02
KR20220121868A (ko) 2022-09-01
US20230170005A1 (en) 2023-06-01

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Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220920

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240119