JPWO2021149770A5

JPWO2021149770A5 -

Info

Publication number: JPWO2021149770A5
Application number: JP2021572793A
Authority: JP
Filing date: 2021-01-21
Publication date: 2022-10-28

Claims

a base material having a glass transition point of 600° C. or lower;
an n-type semiconductor layer formed on one surface of the base material and containing an element or compound of a group 14 element and an n-type impurity element at a concentration corresponding to the solid solubility limit,
The average grain size of the crystal lattice that constitutes the n-type semiconductor layer is 1 nm or more and 100 μm or less,
A semiconductor device, wherein the Group 14 element is an element having a diffusion rate higher than a crystallization rate in a temperature range of 50°C or higher and 600°C or lower.

2. The semiconductor device according to claim 1, wherein the n-type semiconductor layer has a thickness of 10 nm or more and 50 [mu]m or less.

3. A semiconductor device according to claim 1, wherein said n-type impurity element is As, P, Sb or Bi.

4. The semiconductor device according to any one of claims 1 to 3, wherein the element or compound of the group 14 element contains at least one of Si, SiGe, Ge, GeSn and SiSn.

5. The substrate according to any one of claims 1 to 4, further comprising a p-type semiconductor layer formed on one surface of the base material and containing the element or compound of the Group 14 element and a p-type impurity element. The semiconductor device according to item 1.

A thermoelectric conversion device comprising the semiconductor element according to claim 4,
wherein the n-type semiconductor layer and the p-type semiconductor layer have a shape extending in one direction and are arranged alternately;
A single or a plurality of first metal electrode layers are arranged on one end side of the n-type semiconductor layer and the p-type semiconductor layer,
A single or a plurality of second metal electrode layers are arranged on the other end side of the n-type semiconductor layer and the p-type semiconductor layer,
one end of the n-type semiconductor layer and one end of the p-type semiconductor layer adjacent to one side are connected to a common first metal electrode layer;
A thermoelectric conversion device, wherein the other end of the n-type semiconductor layer and the other end of the p-type semiconductor layer adjacent to each other are connected to different second metal electrode layers.

7. The other end of the p-type semiconductor layer adjacent to the second metal electrode layer to which the other end of the n-type semiconductor layer is connected is further connected to the other end of the p-type semiconductor layer. The thermoelectric conversion device described.

7. The other end of the adjacent n-type semiconductor layer is further connected to the second metal electrode layer to which the other end of the p-type semiconductor layer is connected. 8. The thermoelectric conversion device according to any one of 7.

a base material having a glass transition point of 600° C. or lower;
A method for manufacturing a semiconductor device comprising: an n-type semiconductor layer formed on one surface of the base material and containing an element or compound of a group 14 element and an n-type impurity element at a concentration corresponding to the solid solubility limit, ,
a first metal layer forming step of forming a first metal layer containing a first metal element and the n-type impurity element on one surface of the substrate;
a first semiconductor layer forming step of forming a first semiconductor layer containing the element or compound of the group 14 element on the first metal layer;
a layer exchange step of performing a heat treatment and exchanging the stacking order of the first metal layer and the first semiconductor layer;
and a first metal layer removing step of removing the first metal layer after the layer exchange step.

10. The method of manufacturing a semiconductor device according to claim 9, wherein at least one of Zn, Ag, Au, Cu, Al, In, Sn, Sb and Bi is used as the first metal element.

11. The method of manufacturing a semiconductor device according to claim 9, wherein the heat treatment temperature is 600[deg.] C. or lower.

Before the layer exchange step,
a second metal layer forming step of forming a second metal layer containing a second metal element and a p-type impurity element on one surface of the substrate;
a second semiconductor layer forming step of forming a second semiconductor layer containing the single substance or compound of the Group 14 element on the second metal layer,
12. The semiconductor device according to claim 9, further comprising a second metal layer removing step of removing the second metal layer whose stacking order has been changed in the layer changing step. manufacturing method.

A method for manufacturing a thermoelectric conversion device according to any one of claims 6 to 8, using the method for manufacturing a semiconductor element according to claim 12,
A first electrode metal layer connecting one end of the first semiconductor layer and one end of the second semiconductor layer, and a second electrode metal layer connecting the other end of the first semiconductor layer and the other end of the second semiconductor layer. A method for manufacturing a thermoelectric conversion device, further comprising a step of forming an electrode metal layer.