JPWO2021131710A5 - - Google Patents
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- JPWO2021131710A5 JPWO2021131710A5 JP2021567195A JP2021567195A JPWO2021131710A5 JP WO2021131710 A5 JPWO2021131710 A5 JP WO2021131710A5 JP 2021567195 A JP2021567195 A JP 2021567195A JP 2021567195 A JP2021567195 A JP 2021567195A JP WO2021131710 A5 JPWO2021131710 A5 JP WO2021131710A5
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- substrate
- laser
- peeling
- absorption layer
- laser light
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- 238000010521 absorption reaction Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims 45
- 230000001678 irradiating effect Effects 0.000 claims 5
- 238000003672 processing method Methods 0.000 claims 4
- 238000004299 exfoliation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Description
搬送ブロック２０には、Ｘ軸方向に延伸する搬送路２１上を移動自在に構成されたウェハ搬送装置２２が設けられている。ウェハ搬送装置２２は、重合ウェハＴ、第１のウェハＷ１、第２のウェハＷ２を保持して搬送する、例えば２つの搬送アーム２３、２３を有している。各搬送アーム２３は、水平方向、鉛直方向、水平軸回り及び鉛直軸周りに移動自在に構成されている。なお、搬送アーム２３の構成は本実施形態に限定されず、任意の構成を取り得る。そして、ウェハ搬送装置２２は、カセット載置台１１のカセットＣｔ、Ｃｗ１、Ｃｗ２、後述するレーザ照射装置３１及び洗浄装置３２に対して、重合ウェハＴ、第１のウェハＷ１、第２のウェハＷ２を搬送可能に構成されている。
The transfer block 20 is provided with a wafer transfer device 22 which is movable on a transfer path 21 extending in the X-axis direction. The wafer transfer device 22 has, for example, two transfer arms 23, 23 for holding and transferring the superposed wafer T, the first wafer W1, and the second wafer W2. Each transport arm 23 is configured to be movable in the horizontal direction, the vertical direction, around the horizontal axis, and around the vertical axis. Note that the configuration of the transport arm 23 is not limited to the present embodiment, and may take any configuration. Then, the wafer transfer device 22 transfers the superimposed wafer T, the first wafer W1, and the second wafer W2 to the cassettes Ct, Cw1, and Cw2 on the cassette mounting table 11, the laser irradiation device 31, and the cleaning device 32, which will be described later. can be transported.
なお、チャック１００の外部には、第２のウェハＷ２を保持する保持部（図示せず）が設けられていてもよい。後述するように本実施形態では、非剥離領域Ｂが存在することによりレーザ吸収層Ｐからの第２のウェハＷ２のずれや滑落を防止するが、このずれや滑落を上記保持部によってさらに確実に防止することができる。
A holder (not shown) that holds the second wafer W<b>2 may be provided outside the chuck 100 . As will be described later, in this embodiment, the presence of the non-peeling region B prevents the second wafer W2 from slipping or sliding down from the laser absorption layer P. can be prevented .
なお、図７に示すようにレーザ吸収層Ｐにおいて、レーザ光Ｌは同心円状に環状に照射してもよい。但し、この場合、チャック１００の回転とチャック１００のＹ方向の移動が交互に行われるため、上述したようにレーザ光Ｌを螺旋状に照射した方が、照射時間を短時間にしてスループットを向上させることができる。
In addition, as shown in FIG. 7, in the laser absorption layer P, the laser light L may be concentrically and annularly irradiated. However, in this case, since the rotation of the chuck 100 and the movement of the chuck 100 in the Y direction are alternately performed, it is better to irradiate the laser beam L spirally as described above, thereby shortening the irradiation time and improving the throughput. can be made
Claims (11)
前記第１の基板の裏面を保持する保持部と、
前記保持部が前記第１の基板を保持した状態で、前記第２の基板と前記デバイス層の間に形成されたレーザ吸収層に対して、当該第２の基板の裏面側からレーザ光を照射するレーザ照射部と、
前記第１の基板から前記第２の基板を剥離する剥離部と、
前記レーザ照射部の動作を制御する制御部と、を有し、
前記制御部は、
保持部が前記第１の基板の下面を保持した状態で、前記第２の基板と前記デバイス層の間に形成されたレーザ吸収層に対して、レーザ光を相対的に移動させながら当該第２の基板の裏面側から前記レーザ光をパルス状に前記レーザ光が重ならないように照射し、前記第１の基板から前記第２の基板が剥離される剥離領域を形成する制御を行うことと、
前記第２の基板と前記デバイス層の間に形成された前記レーザ吸収層に対して、レーザ光を照射しないことで前記第１の基板から前記第２の基板が剥離されない非剥離領域とを形成する制御を行うことと、
前記第１の基板から前記第２の基板を剥離する制御を行うことと、を実行する、基板処理装置。An apparatus for transferring a device layer formed on the surface of the second substrate to the first substrate in a superimposed substrate in which the first substrate and the second substrate are bonded,
a holding part that holds the back surface of the first substrate;
While the holding part holds the first substrate, the laser absorption layer formed between the second substrate and the device layer is irradiated with a laser beam from the rear surface side of the second substrate. a laser irradiation unit that
a peeling unit for peeling the second substrate from the first substrate;
and a control unit that controls the operation of the laser irradiation unit,
The control unit
While the holding part holds the lower surface of the first substrate, the laser beam is moved relative to the laser absorption layer formed between the second substrate and the device layer while the second substrate is moved. irradiating the laser light in a pulse form from the back side of the substrate so that the laser light does not overlap to form a peeling region where the second substrate is peeled from the first substrate;
A non-peeling region is formed in the laser absorption layer formed between the second substrate and the device layer so that the second substrate is not stripped from the first substrate by not irradiating laser light. and
and controlling the peeling of the second substrate from the first substrate.
保持部が前記第１の基板の下面を保持した状態で、前記第２の基板と前記デバイス層の間に形成されたレーザ吸収層に対して、レーザ光を相対的に移動させながら当該第２の基板の裏面側から前記レーザ光をパルス状に前記レーザ光が重ならないように照射し、前記第１の基板から前記第２の基板が剥離される剥離領域を形成することと、
前記第２の基板と前記デバイス層の間に形成された前記レーザ吸収層に対して、レーザ光を照射しないことで前記第１の基板から前記第２の基板が剥離されない非剥離領域とを形成することと、
前記第１の基板から前記第２の基板を剥離することと、を有する、基板処理方法。A method of transferring a device layer formed on a surface of the second substrate to the first substrate in a superimposed substrate in which a first substrate and a second substrate are bonded, comprising:
While the holding part holds the lower surface of the first substrate, the laser beam is moved relative to the laser absorption layer formed between the second substrate and the device layer while the second substrate is moved. forming a peeling region where the second substrate is peeled from the first substrate by irradiating the laser beam in pulses from the back side of the substrate so that the laser beams do not overlap;
A non-peeling region is formed in the laser absorption layer formed between the second substrate and the device layer so that the second substrate is not stripped from the first substrate by not irradiating laser light. and
and detaching the second substrate from the first substrate.
前記レーザ光の照射を終了した後、剥離部が前記非剥離領域を剥離する、請求項６又は７に記載の基板処理方法。exfoliating the exfoliation region by irradiating the laser light;
8. The substrate processing method according to claim 6, wherein the peeling portion peels off the non-peeling region after the irradiation of the laser beam is finished.
前記レーザ吸収層に照射された前記レーザ光のうち、当該レーザ吸収層で吸収されない前記レーザ光は前記反射膜で反射される、請求項６～９のいずれか一項に記載の基板処理方法。A reflective film is formed on a surface of the laser absorption layer opposite to the surface of incidence of the laser light,
10. The substrate processing method according to claim 6, wherein out of the laser light irradiated to the laser absorption layer, the laser light not absorbed by the laser absorption layer is reflected by the reflection film.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019236287 | 2019-12-26 | ||
| JP2019236287 | 2019-12-26 | ||
| PCT/JP2020/045883 WO2021131710A1 (en) | 2019-12-26 | 2020-12-09 | Substrate processing apparatus, and substrate processing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021131710A1 JPWO2021131710A1 (en) | 2021-07-01 |
| JPWO2021131710A5 true JPWO2021131710A5 (en) | 2022-08-31 |
| JP7308292B2 JP7308292B2 (en) | 2023-07-13 |
Family
ID=76575478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021567195A Active JP7308292B2 (en) | 2019-12-26 | 2020-12-09 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP7308292B2 (en) |
| CN (1) | CN114830293A (en) |
| TW (1) | TW202129742A (en) |
| WO (1) | WO2021131710A1 (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3809681B2 (en) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | Peeling method |
| JP5992696B2 (en) | 2012-02-29 | 2016-09-14 | 株式会社ディスコ | Lift-off device |
| JP2013239650A (en) | 2012-05-16 | 2013-11-28 | Tokyo Ohka Kogyo Co Ltd | Support medium separation method and support medium separation apparatus |
| JP2015144192A (en) | 2014-01-31 | 2015-08-06 | 株式会社ディスコ | lift-off method |
| JP6564301B2 (en) | 2015-10-26 | 2019-08-21 | 東京応化工業株式会社 | Support separation method |
-
2020
- 2020-12-09 JP JP2021567195A patent/JP7308292B2/en active Active
- 2020-12-09 CN CN202080086729.9A patent/CN114830293A/en active Pending
- 2020-12-09 WO PCT/JP2020/045883 patent/WO2021131710A1/en active Application Filing
- 2020-12-14 TW TW109144008A patent/TW202129742A/en unknown
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