JPWO2021105814A1 - - Google Patents
Info
- Publication number
- JPWO2021105814A1 JPWO2021105814A1 JP2021560758A JP2021560758A JPWO2021105814A1 JP WO2021105814 A1 JPWO2021105814 A1 JP WO2021105814A1 JP 2021560758 A JP2021560758 A JP 2021560758A JP 2021560758 A JP2021560758 A JP 2021560758A JP WO2021105814 A1 JPWO2021105814 A1 JP WO2021105814A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/01—Details
- H03K3/011—Modifications of generator to compensate for variations in physical values, e.g. voltage, temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
- H01L27/14616—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019217188 | 2019-11-29 | ||
PCT/IB2020/060736 WO2021105814A1 (ja) | 2019-11-29 | 2020-11-16 | 半導体装置、及びその駆動方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021105814A1 true JPWO2021105814A1 (ja) | 2021-06-03 |
JPWO2021105814A5 JPWO2021105814A5 (ja) | 2023-11-17 |
Family
ID=76130065
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021560758A Pending JPWO2021105814A1 (ja) | 2019-11-29 | 2020-11-16 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220416767A1 (ja) |
JP (1) | JPWO2021105814A1 (ja) |
WO (1) | WO2021105814A1 (ja) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5121003A (en) * | 1990-10-10 | 1992-06-09 | Hal Computer Systems, Inc. | Zero overhead self-timed iterative logic |
DE4115081A1 (de) * | 1991-05-08 | 1992-11-12 | Siemens Ag | Logikschaltung fuer asynchrone schaltungen mit n-kanal-logikblock und dazu inversem p-kanal-logikblock |
DE4214981A1 (de) * | 1992-05-06 | 1993-11-11 | Siemens Ag | Asynchrone Logikschaltung für den 2-Phasen-Betrieb |
JP3504088B2 (ja) * | 1996-10-30 | 2004-03-08 | 株式会社東芝 | 論理回路 |
WO2001082064A2 (en) * | 2000-04-25 | 2001-11-01 | The Trustees Of Columbia University In The City Of New York | Circuits and methods for high-capacity asynchronous pipeline processing |
JP2004349814A (ja) * | 2003-05-20 | 2004-12-09 | Seiko Epson Corp | デジタル・アナログ変換回路、電気光学装置及び電子機器 |
US7898297B2 (en) * | 2005-01-04 | 2011-03-01 | Semi Solution, Llc | Method and apparatus for dynamic threshold voltage control of MOS transistors in dynamic logic circuits |
US7688117B1 (en) * | 2008-04-21 | 2010-03-30 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | N channel JFET based digital logic gate structure |
JP5677869B2 (ja) * | 2011-02-07 | 2015-02-25 | オリンパスイメージング株式会社 | 電子撮像装置 |
JP6216129B2 (ja) * | 2013-03-14 | 2017-10-18 | シナプティクス・ジャパン合同会社 | ゲートドライバ回路及び表示装置 |
US9935633B2 (en) * | 2015-06-30 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Logic circuit, semiconductor device, electronic component, and electronic device |
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2020
- 2020-11-16 US US17/779,675 patent/US20220416767A1/en active Pending
- 2020-11-16 WO PCT/IB2020/060736 patent/WO2021105814A1/ja active Application Filing
- 2020-11-16 JP JP2021560758A patent/JPWO2021105814A1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2021105814A1 (ja) | 2021-06-03 |
US20220416767A1 (en) | 2022-12-29 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231109 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20231109 |