JPWO2021066156A1 - - Google Patents

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Publication number
JPWO2021066156A1
JPWO2021066156A1 JP2021551489A JP2021551489A JPWO2021066156A1 JP WO2021066156 A1 JPWO2021066156 A1 JP WO2021066156A1 JP 2021551489 A JP2021551489 A JP 2021551489A JP 2021551489 A JP2021551489 A JP 2021551489A JP WO2021066156 A1 JPWO2021066156 A1 JP WO2021066156A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021551489A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021066156A1 publication Critical patent/JPWO2021066156A1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
JP2021551489A 2019-10-04 2020-10-02 Pending JPWO2021066156A1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019183940 2019-10-04
JP2019183939 2019-10-04
PCT/JP2020/037577 WO2021066156A1 (ja) 2019-10-04 2020-10-02 結晶性積層構造体および半導体装置

Publications (1)

Publication Number Publication Date
JPWO2021066156A1 true JPWO2021066156A1 (ja) 2021-04-08

Family

ID=75338098

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021551489A Pending JPWO2021066156A1 (ja) 2019-10-04 2020-10-02

Country Status (2)

Country Link
JP (1) JPWO2021066156A1 (ja)
WO (1) WO2021066156A1 (ja)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS645999A (en) * 1987-06-29 1989-01-10 Nippon Telegraph & Telephone Production of thin film of ferroelectric single crystal
JP6349592B2 (ja) * 2014-07-22 2018-07-04 株式会社Flosfia 半導体装置
JP6904517B2 (ja) * 2016-06-30 2021-07-14 株式会社Flosfia 結晶性酸化物半導体膜およびその製造方法

Also Published As

Publication number Publication date
WO2021066156A1 (ja) 2021-04-08

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