JPWO2021064803A1 - - Google Patents
Info
- Publication number
- JPWO2021064803A1 JPWO2021064803A1 JP2021550761A JP2021550761A JPWO2021064803A1 JP WO2021064803 A1 JPWO2021064803 A1 JP WO2021064803A1 JP 2021550761 A JP2021550761 A JP 2021550761A JP 2021550761 A JP2021550761 A JP 2021550761A JP WO2021064803 A1 JPWO2021064803 A1 JP WO2021064803A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2019/038558 WO2021064803A1 (ja) | 2019-09-30 | 2019-09-30 | α－Ｇａ２Ｏ３系半導体膜 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021064803A1 true JPWO2021064803A1 (https=) | 2021-04-08 |
| JP7221410B2 JP7221410B2 (ja) | 2023-02-13 |
Family
ID=75337791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021550761A Active JP7221410B2 (ja) | 2019-09-30 | 2019-09-30 | α－Ｇａ２Ｏ３系半導体膜 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP7221410B2 (https=) |
| WO (1) | WO2021064803A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7644812B2 (ja) * | 2021-04-27 | 2025-03-12 | 日本碍子株式会社 | 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016025256A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社Flosfia | 半導体装置 |
| JP2016051825A (ja) * | 2014-08-29 | 2016-04-11 | 高知県公立大学法人 | 量子井戸構造および半導体装置 |
| JP2016100593A (ja) * | 2014-11-26 | 2016-05-30 | 株式会社Flosfia | 結晶性積層構造体 |
-
2019
- 2019-09-30 WO PCT/JP2019/038558 patent/WO2021064803A1/ja not_active Ceased
- 2019-09-30 JP JP2021550761A patent/JP7221410B2/ja active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016025256A (ja) * | 2014-07-22 | 2016-02-08 | 株式会社Flosfia | 半導体装置 |
| JP2016051825A (ja) * | 2014-08-29 | 2016-04-11 | 高知県公立大学法人 | 量子井戸構造および半導体装置 |
| JP2016100593A (ja) * | 2014-11-26 | 2016-05-30 | 株式会社Flosfia | 結晶性積層構造体 |
Non-Patent Citations (1)
| Title |
|---|
| 金子 健太郎: "コランダム構造酸化ガリウムの結晶成長とデバイス応用", JOURNAL OF THE SOCIETY OF MATERIALS SCIENCE, JAPAN, vol. 65, no. 9, JPN6019043749, September 2016 (2016-09-01), JP, pages 631 - 637, ISSN: 0004893941 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021064803A1 (ja) | 2021-04-08 |
| JP7221410B2 (ja) | 2023-02-13 |
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