JPWO2021064803A1 - - Google Patents

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Publication number
JPWO2021064803A1
JPWO2021064803A1 JP2021550761A JP2021550761A JPWO2021064803A1 JP WO2021064803 A1 JPWO2021064803 A1 JP WO2021064803A1 JP 2021550761 A JP2021550761 A JP 2021550761A JP 2021550761 A JP2021550761 A JP 2021550761A JP WO2021064803 A1 JPWO2021064803 A1 JP WO2021064803A1
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JP
Japan
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Application number
JP2021550761A
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Japanese (ja)
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JP7221410B2 (ja
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2021550761A 2019-09-30 2019-09-30 α－Ｇａ２Ｏ３系半導体膜 Active JP7221410B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2019/038558 WO2021064803A1 (ja) 2019-09-30 2019-09-30 α－Ｇａ２Ｏ３系半導体膜

Publications (2)

Publication Number Publication Date
JPWO2021064803A1 true JPWO2021064803A1 (enrdf_load_stackoverflow) 2021-04-08
JP7221410B2 JP7221410B2 (ja) 2023-02-13

Family

ID=75337791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021550761A Active JP7221410B2 (ja) 2019-09-30 2019-09-30 α－Ｇａ２Ｏ３系半導体膜

Country Status (2)

Country Link
JP (1) JP7221410B2 (enrdf_load_stackoverflow)
WO (1) WO2021064803A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7644812B2 (ja) * 2021-04-27 2025-03-12 日本碍子株式会社 複合基板、複合基板の製法及び酸化ガリウム結晶膜の製法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016025256A (ja) * 2014-07-22 2016-02-08 株式会社Flosfia 半導体装置
JP2016051825A (ja) * 2014-08-29 2016-04-11 高知県公立大学法人 量子井戸構造および半導体装置
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016025256A (ja) * 2014-07-22 2016-02-08 株式会社Flosfia 半導体装置
JP2016051825A (ja) * 2014-08-29 2016-04-11 高知県公立大学法人 量子井戸構造および半導体装置
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
金子 健太郎: "コランダム構造酸化ガリウムの結晶成長とデバイス応用", JOURNAL OF THE SOCIETY OF MATERIALS SCIENCE, JAPAN, vol. 65, no. 9, JPN6019043749, September 2016 (2016-09-01), JP, pages 631 - 637, ISSN: 0004893941 *

Also Published As

Publication number Publication date
WO2021064803A1 (ja) 2021-04-08
JP7221410B2 (ja) 2023-02-13

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