JPWO2020255985A1 - - Google Patents
Info
- Publication number
- JPWO2020255985A1 JPWO2020255985A1 JP2021526819A JP2021526819A JPWO2020255985A1 JP WO2020255985 A1 JPWO2020255985 A1 JP WO2020255985A1 JP 2021526819 A JP2021526819 A JP 2021526819A JP 2021526819 A JP2021526819 A JP 2021526819A JP WO2020255985 A1 JPWO2020255985 A1 JP WO2020255985A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
- H01L21/0276—Photolithographic processes using an anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019111916 | 2019-06-17 | ||
| JP2019111916 | 2019-06-17 | ||
| PCT/JP2020/023671 WO2020255985A1 (ja) | 2019-06-17 | 2020-06-17 | ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020255985A1 true JPWO2020255985A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2020-12-24 |
| JPWO2020255985A5 JPWO2020255985A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2023-06-02 |
| JP7322949B2 JP7322949B2 (ja) | 2023-08-08 |
Family
ID=74040810
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021526819A Active JP7322949B2 (ja) | 2019-06-17 | 2020-06-17 | ジシアノスチリル基を含むウェットエッチング可能なレジスト下層膜形成組成物 |
Country Status (6)
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI803390B (zh) * | 2022-07-15 | 2023-05-21 | 三福化工股份有限公司 | 蝕刻液組成物及其蝕刻方法 |
| KR20250121560A (ko) * | 2022-12-15 | 2025-08-12 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
| WO2025164708A1 (ja) * | 2024-01-31 | 2025-08-07 | 日産化学株式会社 | レジスト下層膜形成用組成物 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6199331A (ja) * | 1984-10-19 | 1986-05-17 | Sumitomo Chem Co Ltd | 微細パタ−ン形成法 |
| JP2005321752A (ja) * | 2004-04-09 | 2005-11-17 | Nissan Chem Ind Ltd | イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物 |
| JP2006508377A (ja) * | 2002-06-25 | 2006-03-09 | ブルーワー サイエンス アイ エヌ シー. | 湿式現像可能な反射防止組成物 |
| JP2011501745A (ja) * | 2007-10-10 | 2011-01-13 | ビーエーエスエフ ソシエタス・ヨーロピア | スルホニウム塩開始剤 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5693691A (en) * | 1995-08-21 | 1997-12-02 | Brewer Science, Inc. | Thermosetting anti-reflective coatings compositions |
| US6846612B2 (en) * | 2002-02-01 | 2005-01-25 | Brewer Science Inc. | Organic anti-reflective coating compositions for advanced microlithography |
| GB0219745D0 (en) | 2002-08-23 | 2002-10-02 | Fast Technology Ag | Torque sensor adaptor |
| JP5791874B2 (ja) * | 2010-03-31 | 2015-10-07 | 富士フイルム株式会社 | 着色組成物、インクジェット用インク、カラーフィルタ及びその製造方法、固体撮像素子、並びに表示装置 |
| TW201202856A (en) | 2010-03-31 | 2012-01-16 | Jsr Corp | Composition for forming resist underlayer film and pattern forming method |
| JP5623934B2 (ja) * | 2011-02-08 | 2014-11-12 | 富士フイルム株式会社 | 着色組成物、着色感放射線性組成物、色素多量体の製造方法、インクジェット用インク、カラーフィルタ及びその製造方法、固体撮像素子、並びに表示装置 |
| KR102344285B1 (ko) * | 2014-02-12 | 2021-12-28 | 닛산 가가쿠 가부시키가이샤 | 불소함유 계면활성제를 포함하는 막형성 조성물 |
| KR102439087B1 (ko) * | 2014-11-19 | 2022-09-01 | 닛산 가가쿠 가부시키가이샤 | 습식제거가 가능한 실리콘함유 레지스트 하층막 형성 조성물 |
| US12366804B2 (en) * | 2019-06-17 | 2025-07-22 | Nissan Chemical Corporation | Composition containing a heterocyclic compound having a dicyanostyryl group, for forming a resist underlayer film capable of being wet etched |
-
2020
- 2020-06-17 CN CN202080044359.2A patent/CN113994263B/zh active Active
- 2020-06-17 JP JP2021526819A patent/JP7322949B2/ja active Active
- 2020-06-17 US US17/619,433 patent/US11977331B2/en active Active
- 2020-06-17 WO PCT/JP2020/023671 patent/WO2020255985A1/ja not_active Ceased
- 2020-06-17 TW TW109120311A patent/TWI834886B/zh active
- 2020-06-17 KR KR1020217041388A patent/KR102592573B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6199331A (ja) * | 1984-10-19 | 1986-05-17 | Sumitomo Chem Co Ltd | 微細パタ−ン形成法 |
| JP2006508377A (ja) * | 2002-06-25 | 2006-03-09 | ブルーワー サイエンス アイ エヌ シー. | 湿式現像可能な反射防止組成物 |
| JP2005321752A (ja) * | 2004-04-09 | 2005-11-17 | Nissan Chem Ind Ltd | イソシアヌル酸化合物と安息香酸化合物との反応生成物を含む反射防止膜形成組成物 |
| JP2011501745A (ja) * | 2007-10-10 | 2011-01-13 | ビーエーエスエフ ソシエタス・ヨーロピア | スルホニウム塩開始剤 |
Also Published As
| Publication number | Publication date |
|---|---|
| US11977331B2 (en) | 2024-05-07 |
| CN113994263A (zh) | 2022-01-28 |
| TW202113486A (zh) | 2021-04-01 |
| US20220397828A1 (en) | 2022-12-15 |
| WO2020255985A1 (ja) | 2020-12-24 |
| TWI834886B (zh) | 2024-03-11 |
| JP7322949B2 (ja) | 2023-08-08 |
| CN113994263B (zh) | 2024-08-16 |
| KR20220024080A (ko) | 2022-03-03 |
| KR102592573B1 (ko) | 2023-10-23 |
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