JPWO2020255616A1 - - Google Patents

Info

Publication number
JPWO2020255616A1
JPWO2020255616A1 JP2021527488A JP2021527488A JPWO2020255616A1 JP WO2020255616 A1 JPWO2020255616 A1 JP WO2020255616A1 JP 2021527488 A JP2021527488 A JP 2021527488A JP 2021527488 A JP2021527488 A JP 2021527488A JP WO2020255616 A1 JPWO2020255616 A1 JP WO2020255616A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021527488A
Other versions
JP7263516B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020255616A1 publication Critical patent/JPWO2020255616A1/ja
Application granted granted Critical
Publication of JP7263516B2 publication Critical patent/JP7263516B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2021527488A 2019-06-20 2020-05-21 研磨液、及び、化学的機械的研磨方法 Active JP7263516B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019114648 2019-06-20
JP2019114648 2019-06-20
PCT/JP2020/020087 WO2020255616A1 (ja) 2019-06-20 2020-05-21 研磨液、及び、化学的機械的研磨方法

Publications (2)

Publication Number Publication Date
JPWO2020255616A1 true JPWO2020255616A1 (ja) 2020-12-24
JP7263516B2 JP7263516B2 (ja) 2023-04-24

Family

ID=74037088

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021527488A Active JP7263516B2 (ja) 2019-06-20 2020-05-21 研磨液、及び、化学的機械的研磨方法

Country Status (4)

Country Link
US (1) US20220098444A1 (ja)
JP (1) JP7263516B2 (ja)
KR (1) KR20220007661A (ja)
WO (1) WO2020255616A1 (ja)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011091248A (ja) * 2009-10-23 2011-05-06 Hitachi Chem Co Ltd コバルト用研磨液、及びこの研磨液を用いた基板の研磨方法
WO2016006631A1 (ja) * 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
JP2017048256A (ja) * 2014-01-16 2017-03-09 日立化成株式会社 研磨液の製造方法及び研磨方法
JP2017107918A (ja) * 2015-12-07 2017-06-15 日立化成株式会社 Ｃｍｐ用研磨液及びその製造方法、並びに、研磨方法
JP2017157591A (ja) * 2016-02-29 2017-09-07 日立化成株式会社 Ｃｍｐ研磨液及び研磨方法
WO2018159530A1 (ja) * 2017-02-28 2018-09-07 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、研磨液原液収容体、化学的機械的研磨方法
JP2019501511A (ja) * 2015-10-21 2019-01-17 キャボット マイクロエレクトロニクス コーポレイション ディッシング改善用のコバルトインヒビターの組合せ

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6156630B2 (ja) 2013-05-24 2017-07-05 Jsr株式会社 化学機械研磨用水系分散体および化学機械研磨方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011091248A (ja) * 2009-10-23 2011-05-06 Hitachi Chem Co Ltd コバルト用研磨液、及びこの研磨液を用いた基板の研磨方法
JP2017048256A (ja) * 2014-01-16 2017-03-09 日立化成株式会社 研磨液の製造方法及び研磨方法
WO2016006631A1 (ja) * 2014-07-09 2016-01-14 日立化成株式会社 Ｃｍｐ用研磨液及び研磨方法
JP2019501511A (ja) * 2015-10-21 2019-01-17 キャボット マイクロエレクトロニクス コーポレイション ディッシング改善用のコバルトインヒビターの組合せ
JP2017107918A (ja) * 2015-12-07 2017-06-15 日立化成株式会社 Ｃｍｐ用研磨液及びその製造方法、並びに、研磨方法
JP2017157591A (ja) * 2016-02-29 2017-09-07 日立化成株式会社 Ｃｍｐ研磨液及び研磨方法
WO2018159530A1 (ja) * 2017-02-28 2018-09-07 富士フイルム株式会社 研磨液、研磨液の製造方法、研磨液原液、研磨液原液収容体、化学的機械的研磨方法

Also Published As

Publication number Publication date
KR20220007661A (ko) 2022-01-18
US20220098444A1 (en) 2022-03-31
WO2020255616A1 (ja) 2020-12-24
TW202108733A (zh) 2021-03-01
JP7263516B2 (ja) 2023-04-24

Similar Documents

Publication Publication Date Title
BR112019017762A2 (ja)
BR112021013854A2 (ja)
BR112021018450A2 (ja)
BR112019016141A2 (ja)
AU2020104490A4 (ja)
BR112019016142A2 (ja)
BR112019016138A2 (ja)
BR112021017728A2 (ja)
BR112021008711A2 (ja)
BR112021018452A2 (ja)
BR112021017173A2 (ja)
BR112021017083A2 (ja)
BR112021012348A2 (ja)
BR112021013944A2 (ja)
BR112021013128A2 (ja)
BR112021018484A2 (ja)
BR112021015080A2 (ja)
JPWO2020255602A1 (ja)
BR112021016205A2 (ja)
BR112021016996A2 (ja)
BR112021017010A2 (ja)
AT524962A5 (ja)
BR112019016136A2 (ja)
BR112021016821A2 (ja)
JPWO2020255616A1 (ja)

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20211129

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20221004

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221205

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230328

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20230412

R150 Certificate of patent or registration of utility model

Ref document number: 7263516

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150