JPWO2020254937A5

JPWO2020254937A5 -

Info

Publication number: JPWO2020254937A5
Application number: JP2021575974A
Authority: JP
Publication date: 2023-05-11
Anticipated expiration: 2040-06-15

Description

（任意の添付の図面及び図を含むがこれらに限定されない）上記の説明は、この発明の例示的な実施態様を説明している。しかしながら、本発明は、他の態様で実装されてもよい。本明細書において説明する方法及び装置は、この発明の原理の単なる例示的な応用である。当業者による、他の配置、方法、改変及び置換も、この発明の範囲内である。当業者であれば、この発明の範囲を逸脱することなく、多数の変更を行い得る。また、この発明は、本明細書において説明する（ハードウェア、ハードウェア構成要素、方法、プロセス、ステップ、ソフトウェア、アルゴリズム、機能又は技術を含む）１つ又は複数の項目の各組合せ及び順列を制限なく含む。
なお、本願の出願当初の開示事項を維持するために、本願の出願当初の請求項１～５９の記載内容を以下に追加する。
（請求項１）
（ａ）撮像画素の第１フォトダイオード内において、第１光学フィルタを通過して前記第１フォトダイオード上へと入射する光の入射照度である第１入射量に依存した生成速度で、電荷を生成するステップと、
（ｂ）前記電荷の第１部分を、ある減少割合で減少させるステップであって、（ｉ）前記減少割合が、第２光学フィルタを通過して前記撮像画素の第２回路素子上へと入射する光の入射照度である第２入射量に少なくとも部分的に依存するように、（ｉｉ）前記第１フォトダイオード又は前記電荷が蓄積された第３回路素子から前記減少を行うように、減少させるステップと、
（ｃ）前記電荷の残余部分を読み出すステップであって、前記残余部分は、前記第１部分を減少させた後に残ったものである、読み出すステップと
を含んでなり、
（１）前記撮像画素上へと入射する光は、能動光と周囲光とを含み、
（２）前記第１光学フィルタを通過して前記第１フォトダイオード上へと入射する周囲光の入射照度は、前記第２光学フィルタを通過して前記第２回路素子上へと入射する周囲光の入射照度と比較して２５％未満しか相違せず、
（３）前記第２光学フィルタを通過して前記第２回路素子上へと入射する前記能動光の入射照度は、前記第１光学フィルタを通過して前記第１フォトダイオード上へと入射する前記能動光の入射照度の２５％未満であり、
（４）前記減少により、前記撮像画素が行う測定に対して前記周囲光が与える影響を低減又は排除するものである方法。
（請求項２）
（ａ）前記第１フォトダイオードから前記減少を行い、
（ｂ）前記第２回路素子は、第２フォトダイオードであり、
（ｃ）前記第２フォトダイオード内に蓄積された電荷は、前記第２光学フィルタを通過した前記光に応答して、トランジスタの領域内の電圧を制御することにより、前記トランジスタを流れる電流であって前記第１フォトダイオードから電荷を減少させる電流を制御する、請求項１に記載の方法。
（請求項３）
（ａ）前記第１フォトダイオードによって生成された電荷を蓄積する浮遊拡散容量から前記減少を行い、
（ｂ）前記第２回路素子は、フォトレジスタであり、
（ｃ）前記第２光学フィルタを通過して前記フォトレジスタ上へと入射する光の前記入射照度は、（ｉ）前記フォトレジスタの電気抵抗値を制御し、（ｉｉ）ひいては、前記フォトレジスタを流れて前記第１フォトダイオードから電荷を減少させる電流のアンペア数を制御する、請求項１に記載の方法。
（請求項４）
前記減少と前記生成とのそれぞれを、前記撮像画素の１フレームを通して連続的に行う、請求項１に記載の方法。
（請求項５）
前記撮像画素の各フレーム中に、少なくとも１回は前記減少を行う、請求項１に記載の方法。
（請求項６）
前記減少は、前記生成と同時である、請求項１に記載の方法。
（請求項７）
前記減少割合は、前記第２回路素子上へと入射する前記入射照度に対して正比例する、請求項１に記載の方法。
（請求項８）
前記撮像画素の１フレームを通して、前記減少割合は、前記第２回路素子上へと入射する前記入射照度に対して実質的に比例する、請求項１に記載の方法。
（請求項９）
前記減少割合は、前記第２回路素子上へと入射する光に基づいて蓄積される電荷量に対して正比例する、請求項１に記載の方法。
（請求項１０）
前記撮像画素の１フレームを通して、前記減少割合は、前記第２回路素子上へと入射する光に基づいて蓄積される電荷量に対して実質的に比例する、請求項１に記載の方法。
（請求項１１）
前記減少割合は、前記生成速度が弱く単調に増加する場合には、弱く単調に増加する傾向がある、請求項１に記載の方法。
（請求項１２）
前記能動光のピーク周波数は、周波数帯域内にあり、前記周波数帯域は、（ａ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｂ）５ナノメートル未満の帯域幅を有する、請求項１に記載の方法。
（請求項１３）
（ａ）前記能動光は、周波数帯域内にピーク周波数を有し、前記周波数帯域は、（ｉ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｉｉ）５ナノメートル未満の帯域幅を有し、
（ｂ）前記第１光学フィルタは、通過帯域を有し、
（ｃ）前記第１光学フィルタの前記通過帯域は、前記能動光の前記周波数帯域内にある少なくとも１つの周波数を含む、請求項１に記載の方法。
（請求項１４）
（ａ）前記能動光は、周波数帯域内にピーク周波数を有し、前記周波数帯域は、（ｉ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｉｉ）５ナノメートル未満の帯域幅を有し、
（ｂ）前記第１光学フィルタは、前記能動光の前記周波数帯域と交差する通過帯域を有し、
（ｃ）前記第２光学フィルタは、前記能動光の前記周波数帯域と交差しない通過帯域を有する、請求項１に記載の方法。
（請求項１５）
能動的な光源から前記能動光を放出させることも含む請求項１に記載の方法。
（請求項１６）
（ａ）前記撮像画素は、カメラ内のセットをなす複数の撮像画素のうちの１つであり、
（ｂ）前記方法は、前記セット内の他の各画素において、前記生成及び前記減少を行うことも含む、請求項１に記載の方法。
（請求項１７）
カメラ内のセットをなす撮像画素内における特定の各撮像画素ごとに、
（ａ）第１光学フィルタを通過して第１フォトダイオードを照射する光に応答して、前記特定の画素の前記第１フォトダイオード内で電荷を生成するステップと、
（ｂ）トランジスタの領域内の電圧に依存する、ある減少割合で前記第１フォトダイオードから前記電荷の第１部分を減少させるステップであって、前記電圧は、（ｉ）前記減少中に前記第１フォトダイオードから前記トランジスタを介して流れる電流のアンペア数を制御するとともに、（ｉｉ）第２光学フィルタを通過して第２フォトダイオードを照射する光に応答して前記特定の画素の前記第２フォトダイオード内で生成される電荷によって制御される、減少させるステップと、
（ｃ）前記電荷の残余部分を読み出すステップであって、前記残余部分は、前記第１部分が減少した後に残ったものである、読み出すステップと
を含んでなり、
（１）前記特定の画素上へと入射する光は、能動光と周囲光とを含み、
（２）前記第１光学フィルタを通過して前記第１フォトダイオード上へと入射する周囲光の入射照度は、前記第２光学フィルタを通過して前記第２フォトダイオード上へと入射する周囲光の入射照度と比較して２５％未満しか相違せず、
（３）前記第２光学フィルタを通過して前記第２フォトダイオード上へと入射する能動光の入射照度は、前記第１光学フィルタを通過して前記第１フォトダイオード上へと入射する能動光の入射照度の２５％未満であり、
（４）前記減少により、前記特定の画素が行う測定に対して前記周囲光が与える影響を低減又は排除するものである方法。
（請求項１８）
前記減少と前記生成とのそれぞれを、前記カメラの１フレームを通して連続的に行う、請求項１７に記載の方法。
（請求項１９）
前記カメラの各フレーム中に、少なくとも１回は前記減少を行う、請求項１７に記載の方法。
（請求項２０）
前記減少は、前記生成と同時である、請求項１７に記載の方法。
（請求項２１）
前記減少割合は、前記電圧に対して正比例する、請求項１７に記載の方法。
（請求項２２）
前記カメラの１フレームを通して、前記減少割合は、前記電圧に対して実質的に比例する、請求項１７に記載の方法。
（請求項２３）
（ａ）ある生成速度で前記生成を行い、
（ｂ）前記減少割合は、前記生成速度が弱く単調に増加する場合には、弱く単調に増加する傾向がある、請求項１７に記載の方法。
（請求項２４）
前記能動光のピーク周波数は、周波数帯域内にあり、前記周波数帯域は、（ａ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｂ）５ナノメートル未満の帯域幅を有する、請求項１７に記載の方法。
（請求項２５）
前記能動光のピーク周波数は、周波数帯域内にあり、前記周波数帯域は、（ａ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｂ）３ナノメートル未満の帯域幅を有する、請求項１７に記載の方法。
（請求項２６）
（ａ）前記能動光は、周波数帯域内にピーク周波数を有し、前記周波数帯域は、（ｉ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｉｉ）５ナノメートル未満の帯域幅を有し、
（ｂ）前記第１光学フィルタは、通過帯域を有し、
（ｃ）前記第１光学フィルタの前記通過帯域は、前記能動光の前記周波数帯域内にある少なくとも１つの周波数を含む、請求項１７に記載の方法。
（請求項２７）
（ａ）前記能動光は、周波数帯域内にピーク周波数を有し、前記周波数帯域は、（ｉ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｉｉ）５ナノメートル未満の帯域幅を有し、
（ｂ）前記第１光学フィルタは、前記能動光の前記周波数帯域と交差する通過帯域を有し、
（ｃ）前記第２光学フィルタは、前記能動光の前記周波数帯域と交差しない通過帯域を有する、請求項１７に記載の方法。
（請求項２８）
前記方法は、能動的な光源から前記能動光を放出させることも含む、請求項１７に記載の方法。
（請求項２９）
カメラ内のセットをなす撮像画素内における特定の各撮像画素ごとに、
（ａ）第１光学フィルタを通過してフォトダイオード上へと入射する光に応答して、前記特定の画素の前記フォトダイオード内で電荷を生成するステップと、
（ｂ）第２光学フィルタを通過して前記特定の画素のフォトレジスタ上へと入射する光の入射照度に依存するある減少割合で、前記電荷の第１部分を減少させるステップと、
（ｃ）前記電荷の残余部分を読み出すステップであって、前記残余部分は、前記第１部分が減少した後に残ったものである、読み出すステップと
を含んでなり、
（１）前記フォトダイオード内で生成された電荷を蓄積する浮遊拡散容量から前記減少を行い、
（２）前記フォトレジスタは、前記減少中に前記浮遊拡散容量から前記フォトレジスタを介して流れる電流のアンペア数を制御する光依存性抵抗値を有し、
（３）前記特定の画素上へと入射する光は、能動光と周囲光とを含み、
（４）前記第１光学フィルタを通過して前記フォトダイオード上へと入射する周囲光の入射照度は、前記第２光学フィルタを通過して前記フォトレジスタ上へと入射する周囲光の入射照度と比較して２５％未満しか相違せず、
（５）前記第２光学フィルタを通過して前記フォトレジスタ上へと入射する能動光の入射照度は、前記第１光学フィルタを通過して前記フォトダイオード上へと入射する能動光の入射照度の２５％未満であり、
（６）前記減少により、前記特定の画素が行う測定に対して前記周囲光が与える影響を低減又は除去するものである方法。
（請求項３０）
前記減少と前記生成とのそれぞれを、前記カメラの１フレームを通して連続的に行う、請求項２９に記載の方法。
（請求項３１）
前記カメラの各フレーム中に、少なくとも１回は前記減少を行う、請求項２９に記載の方法。
（請求項３２）
前記減少は、前記生成と同時である、請求項２９に記載の方法。
（請求項３３）
（ａ）ある生成速度で前記生成を行い、
（ｂ）前記生成速度は、前記第１光学フィルタを通過して前記フォトダイオード上へと入射する光の入射照度に依存し、
（ｃ）前記減少割合は、前記生成速度に対して正比例する、請求項２９に記載の方法。
（請求項３４）
（ａ）ある生成速度で前記生成を行い、
（ｂ）前記生成速度は、前記第１光学フィルタを通過して前記フォトダイオード上へと入射する光の入射照度に依存し、
（ｃ）前記カメラの１フレームを通して、前記減少割合は、前記生成速度に対して実質的に比例する、請求項２９に記載の方法。
（請求項３５）
（ａ）ある生成速度で前記生成を行い、
（ｂ）前記生成速度は、前記第１光学フィルタを通過して前記フォトダイオード上へと入射する光の入射照度に依存し、
（ｃ）前記減少割合は、前記生成速度が弱く単調に増加する場合には、弱く単調に増加する傾向がある、請求項２９に記載の方法。
（請求項３６）
前記能動光のピーク周波数は、周波数帯域内にあり、前記周波数帯域は、（ａ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｂ）５ナノメートル未満の帯域幅を有する、請求項２９に記載の方法。
（請求項３７）
（ａ）前記能動光は、周波数帯域内にピーク周波数を有し、前記周波数帯域は、（ｉ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｉｉ）５ナノメートル未満の帯域幅を有し、
（ｂ）前記第１光学フィルタは、通過帯域を有し、
（ｃ）前記第１光学フィルタの前記通過帯域は、前記能動光の前記周波数帯域内にある少なくとも１つの周波数を含む、請求項２９に記載の方法。
（請求項３８）
（ａ）前記能動光は、周波数帯域内にピーク周波数を有し、前記周波数帯域は、（ｉ）ハーフパワーポイントのところに遮断周波数を有するとともに、（ｉｉ）５ナノメートル未満の帯域幅を有し、
（ｂ）前記第１光学フィルタは、前記能動光の前記周波数帯域と交差する通過帯域を有し、
（ｃ）前記第２光学フィルタは、前記能動光の前記周波数帯域と交差しない通過帯域を有する、請求項２９に記載の方法。
（請求項３９）
前記方法は、能動的な光源から前記能動光を放出させることも含む、請求項２９に記載の方法。
（請求項４０）
セットをなす撮像画素を含むカメラであって、前記セット内の特定の各撮像画素ごとに、
（ａ）前記特定の画素は、第１フォトダイオードと、第２フォトダイオードと、第１光学フィルタと、第２光学フィルタとを含み、
（ｂ）前記第１フォトダイオードは、前記第１光学フィルタを通過して前記第１フォトダイオードを照射する光に応答して、電荷の生成を行うように構成され、
（ｃ）前記カメラは、前記カメラの一部をなすトランジスタの領域内の電圧に依存する、ある減少割合で、前記第１フォトダイオードから前記電荷の第１部分を減少させるように構成され、
（ｄ）前記カメラは、前記トランジスタの領域内の前記電圧が、（ｉ）前記減少中に前記第１フォトダイオードから前記トランジスタを介して流れる電流のアンペア数を制御するとともに、（ｉｉ）前記第２光学フィルタを通過して前記第２フォトダイオードを照射する光に応答して前記第２フォトダイオード内で生成される電荷によって制御されるように構成され、
（ｅ）前記カメラは、前記電荷の残余部分を読み出すように構成され、前記残余部分は、前記第１部分が減少した後に残ったものであり、
（１）前記第１光学フィルタ及び前記第２光学フィルタは、（ｉ）前記第１光学フィルタを通過して前記第１フォトダイオード上へと入射する周囲光の入射照度が、前記第２光学フィルタを通過して前記第２フォトダイオード上へと入射する周囲光の入射照度と比較して、２５％未満しか相違しないように構成され、（ｉｉ）前記第２光学フィルタを通過して前記第２フォトダイオード上へと入射する能動光の入射照度が、前記第１光学フィルタを通過して前記第１フォトダイオード上へと入射する能動光の入射照度の２５％未満であるように構成され、
（２）前記電荷の前記第１部分の前記減少が、前記特定の画素が行う測定に対して前記周囲光が与える影響を低減又は排除するように構成されているカメラ。
（請求項４１）
前記減少と前記生成とのそれぞれが前記カメラの１フレームを通して連続的に行われるように構成されている請求項４０に記載のカメラ。
（請求項４２）
前記カメラの各フレーム中に少なくとも１回は前記減少が行われるように構成されている請求項４０に記載のカメラ。
（請求項４３）
前記減少が前記生成と同時に行われるように構成されている請求項４０に記載のカメラ。
（請求項４４）
前記減少割合が前記電圧に対して正比例するように構成されている請求項４０に記載のカメラ。
（請求項４５）
前記カメラの１フレームを通して、前記減少割合が前記電圧に対して実質的に比例するように構成されている請求項４０に記載のカメラ。
（請求項４６）
（ａ）ある生成速度で前記生成を行うように構成され、
（ｂ）前記減少割合は、前記生成速度が弱く単調に増加する場合には、弱く単調に増加する傾向があるように構成されている請求項４０に記載のカメラ。
（請求項４７）
前記第１光学フィルタは、前記能動光の周波数帯域と交差する通過帯域を有し、前記能動光の前記周波数帯域は、５ナノメートル未満の帯域幅を有している、請求項４０に記載のカメラ。
（請求項４８）
（ａ）前記第１光学フィルタは、前記能動光の周波数帯域と交差する通過帯域を有し、前記能動光の前記周波数帯域は、５ナノメートル未満の帯域幅を有し、
（ｂ）前記第２光学フィルタは、前記能動光の前記周波数帯域と交差しない通過帯域を有している、請求項４０に記載のカメラ。
（請求項４９）
（ａ）前記カメラは、能動的な光源も含み、
（ｂ）前記能動的な光源は、前記能動光を放出するように構成されている、請求項４０に記載のカメラ。
（請求項５０）
セットをなす撮像画素を含むカメラであって、前記セット内の特定の各撮像画素ごとに、
（ａ）前記特定の画素は、フォトダイオードと、フォトレジスタと、第１光学フィルタと、第２光学フィルタとを含み、
（ｂ）前記フォトダイオードは、前記第１光学フィルタを通過して前記フォトダイオードを照射する光に応答して、電荷の生成を行うように構成され、
（ｃ）前記カメラは、前記第２光学フィルタを通過して前記フォトレジスタ上へと入射する光の入射照度に依存するある減少割合で、前記電荷の第１部分を減少させるように構成され、
（ｄ）前記カメラは、前記カメラの一部をなす浮遊拡散容量であって前記フォトダイオード内で生成された電荷を一時的に蓄積するように構成された浮遊拡散容量から前記減少を行うように構成され、
（ｅ）前記フォトレジスタは、光依存性抵抗値を有し、
（ｆ）前記カメラは、前記フォトレジスタの前記光依存性抵抗値が、前記減少中に前記浮遊拡散容量から前記フォトレジスタを介して流れる電流のアンペア数を制御するように構成され、
（ｇ）前記カメラは、前記電荷の残余部分を読み出すように構成され、前記残余部分は、前記第１部分が減少した後に残ったものであり、
（１）前記第１光学フィルタ及び前記第２光学フィルタは、（ｉ）前記第１光学フィルタを通過して前記フォトダイオード上へと入射する周囲光の入射照度が、前記第２光学フィルタを通過して前記フォトレジスタ上へと入射する周囲光の入射照度と比較して、２５％未満しか相違しないように構成され、（ｉｉ）前記第２光学フィルタを通過して前記フォトレジスタ上へと入射する能動光の入射照度が、前記第１光学フィルタを通過して前記フォトダイオード上へと入射する能動光の入射照度の２５％未満であるように構成され、
（２）前記電荷の前記第１部分の前記減少が、前記特定の画素が行う測定に対して前記周囲光が与える影響を低減又は除去するように構成されているカメラ。
（請求項５１）
前記減少と前記生成とのそれぞれが前記カメラの１フレームを通して連続的に行われるように構成されている請求項５０に記載のカメラ。
（請求項５２）
前記カメラの各フレーム中に少なくとも１回は前記減少が行われるように構成されている請求項５０に記載のカメラ。
（請求項５３）
前記減少が前記生成と同時に行われるように構成されている請求項５０に記載のカメラ。
（請求項５４）
（ａ）ある生成速度で前記生成を行い、
（ｂ）前記生成速度が、前記第１光学フィルタを通過して前記フォトダイオード上へと入射する光の入射照度に依存するように構成され、
（ｃ）前記減少割合が、前記生成速度に対して正比例するように構成されている請求項５０に記載のカメラ。
（請求項５５）
（ａ）ある生成速度で前記生成を行い、
（ｂ）前記生成速度は、前記第１光学フィルタを通過して前記フォトダイオード上へと入射する光の入射照度に依存し、
（ｃ）前記特定の画素の１フレームを通して、前記減少割合は、前記生成速度に対して実質的に比例する、請求項２９に記載の方法。
（請求項５６）
（ａ）ある生成速度で前記生成を行い、
（ｂ）前記減少割合が、前記生成速度が弱く単調に増加する場合には、弱く単調に増加
する傾向があるように構成されている請求項５０に記載のカメラ。
（請求項５７）
前記第１光学フィルタは、前記能動光の周波数帯域と交差する通過帯域を有し、前記能動光の前記周波数帯域は、５ナノメートル未満の帯域幅を有している、請求項５０に記載のカメラ。
（請求項５８）
（ａ）前記第１光学フィルタは、前記能動光の周波数帯域と交差する通過帯域を有し、前記能動光の前記周波数帯域は、５ナノメートル未満の帯域幅を有し、
（ｂ）前記第２光学フィルタは、前記能動光の前記周波数帯域と交差しない通過帯域を有している、請求項５０に記載のカメラ。
（請求項５９）
（ａ）前記カメラは、能動的な光源も含み、
（ｂ）前記能動的な光源は、前記能動光を放出するように構成されている請求項５０に記載のカメラ。 The foregoing description (including, but not limited to, any accompanying drawings and figures) describes exemplary embodiments of the present invention. However, the invention may be implemented in other ways. The methods and apparatus described herein are merely exemplary applications of the principles of the invention. Other arrangements, methods, modifications and permutations by those skilled in the art are also within the scope of this invention. Numerous modifications can be made by those skilled in the art without departing from the scope of this invention. Further, this invention limits each combination and permutation of one or more of the items (including hardware, hardware components, methods, processes, steps, software, algorithms, functions or techniques) described herein. including without
In addition, in order to maintain the disclosure matters of the original application of this application, the descriptions of claims 1 to 59 of the original application of this application are added below.
(Claim 1)
(a) in the first photodiode of the imaging pixel, charge is generated at a generation rate dependent on a first incident amount, which is the incident illuminance of light incident on the first photodiode after passing through the first optical filter; a step of generating;
(b) reducing a first portion of said charge by a decreasing rate, wherein (i) said decreasing rate passes through a second optical filter and onto a second circuit element of said imaging pixel; (ii) making said reduction from said first photodiode or said charge-stored third circuit element; a step;
(c) reading a residual portion of said charge, said residual portion being that which remained after reducing said first portion;
comprising
(1) the light incident on the imaging pixels includes active light and ambient light;
(2) the incident illuminance of the ambient light passing through the first optical filter and onto the first photodiode is equal to the ambient light passing through the second optical filter and onto the second circuit element; differ by less than 25% compared to the incident illuminance of
(3) The incident illuminance of the active light that passes through the second optical filter and is incident on the second circuit element is the same as that of the active light that is incident on the first photodiode after passing the first optical filter. is less than 25% of the incident illuminance of the active light;
(4) the reduction reduces or eliminates the effect of the ambient light on measurements made by the imaging pixels;
(Claim 2)
(a) performing said reduction from said first photodiode;
(b) the second circuit element is a second photodiode;
(c) the charge stored in the second photodiode is a current flowing through the transistor by controlling the voltage in the region of the transistor in response to the light passing through the second optical filter; 2. The method of claim 1, wherein a current is controlled to remove charge from the first photodiode.
(Claim 3)
(a) performing said reduction from a floating diffusion capacitance storing charge generated by said first photodiode;
(b) the second circuit element is a photoresistor;
(c) the incident illuminance of light passing through the second optical filter and impinging on the photoresistor (i) controls the electrical resistance of the photoresistor, 2. The method of claim 1, wherein controlling the amperage of the current flowing to deplete the charge from the first photodiode.
(Claim 4)
2. The method of claim 1, wherein each of said reduction and said generation is performed continuously through one frame of said imaging pixels.
(Claim 5)
2. The method of claim 1, wherein said reduction is performed at least once during each frame of said imaged pixels.
(Claim 6)
2. The method of claim 1, wherein said reducing is simultaneous with said generating.
(Claim 7)
2. The method of claim 1, wherein said rate of decrease is directly proportional to said incident illumination incident on said second circuit element.
(Claim 8)
2. The method of claim 1, wherein over a frame of said imaging pixels, said rate of decrease is substantially proportional to said incident illumination incident on said second circuit element.
(Claim 9)
2. The method of claim 1, wherein said rate of decrease is directly proportional to the amount of charge accumulated based on light impinging on said second circuit element.
(Claim 10)
2. The method of claim 1, wherein over a frame of said imaging pixels, said rate of decrease is substantially proportional to the amount of charge accumulated based on light impinging on said second circuit element.
(Claim 11)
2. The method of claim 1, wherein the rate of decrease tends to be weakly monotonically increasing if the rate of production is weakly monotonically increasing.
(Claim 12)
2. The method of claim 1, wherein the peak frequency of the active light is within a frequency band, the frequency band (a) having a cutoff frequency at half power point and (b) having a bandwidth of less than 5 nanometers. described method.
(Claim 13)
(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband;
2. The method of claim 1, wherein (c) the passband of the first optical filter includes at least one frequency within the frequency band of the active light.
(Claim 14)
(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband that intersects the frequency band of the active light;
2. The method of claim 1, wherein (c) said second optical filter has a passband that does not intersect said frequency band of said active light.
(Claim 15)
2. The method of claim 1, also comprising emitting said active light from an active light source.
(Claim 16)
(a) the imaging pixel is one of a set of imaging pixels in a camera;
2. The method of claim 1, wherein (b) said method also includes performing said generating and said decreasing at each other pixel in said set.
(Claim 17)
For each particular imaging pixel in a set of imaging pixels in the camera,
(a) generating charge in said first photodiode of said particular pixel in response to light passing through a first optical filter and illuminating said first photodiode;
(b) reducing a first portion of said charge from said first photodiode at a decreasing rate dependent on the voltage in the region of a transistor, said voltage being (i) said first photodiode during said decreasing; (ii) controlling the amperage of current flowing through said transistor from one photodiode and (ii) controlling said second photodiode of said particular pixel in response to light passing through a second optical filter and illuminating said second photodiode; a reducing step controlled by the charge generated in the photodiode;
(c) reading a residual portion of said charge, said residual portion being what remained after said first portion was reduced;
comprising
(1) light impinging on the particular pixel includes active light and ambient light;
(2) the incident illuminance of the ambient light passing through the first optical filter and onto the first photodiode is equal to the ambient light passing through the second optical filter and onto the second photodiode; differ by less than 25% compared to the incident illuminance of
(3) The incident illuminance of the active light that passes through the second optical filter and enters the second photodiode is equal to the active light that passes through the first optical filter and enters the first photodiode is less than 25% of the incident illuminance of
(4) said reduction reduces or eliminates the effect of said ambient light on measurements made by said particular pixel.
(Claim 18)
18. The method of claim 17, wherein each of said reduction and said generation occurs continuously through one frame of said camera.
(Claim 19)
18. The method of claim 17, wherein said reduction is performed at least once during each frame of said camera.
(Claim 20)
18. The method of claim 17, wherein said reducing is simultaneous with said generating.
(Claim 21)
18. The method of claim 17, wherein said rate of decrease is directly proportional to said voltage.
(Claim 22)
18. The method of claim 17, wherein the rate of decrease is substantially proportional to the voltage over one frame of the camera.
(Claim 23)
(a) performing said production at a production rate;
18. The method of claim 17, wherein (b) the rate of decrease tends to be weakly monotonically increasing if the rate of production is weakly monotonically increasing.
(Claim 24)
18. The method of claim 17, wherein the peak frequency of the active light is within a frequency band, the frequency band (a) having a cutoff frequency at half power point and (b) having a bandwidth of less than 5 nanometers. described method.
(Claim 25)
18. The method of claim 17, wherein the peak frequency of the active light is within a frequency band, the frequency band (a) having a cutoff frequency at half power point and (b) having a bandwidth of less than 3 nanometers. described method.
(Claim 26)
(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband;
18. The method of claim 17, wherein (c) the passband of the first optical filter includes at least one frequency within the frequency band of the active light.
(Claim 27)
(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband that intersects the frequency band of the active light;
18. The method of claim 17, wherein (c) said second optical filter has a passband that does not intersect said frequency band of said active light.
(Claim 28)
18. The method of claim 17, said method also comprising emitting said active light from an active light source.
(Claim 29)
For each particular imaging pixel in a set of imaging pixels in the camera,
(a) generating charge in the photodiode of the particular pixel in response to light passing through a first optical filter and impinging on the photodiode;
(b) reducing the first portion of the charge by a decreasing rate dependent on the incident illuminance of light passing through a second optical filter and onto the photoresistor of the particular pixel;
(c) reading a residual portion of said charge, said residual portion being what remained after said first portion was reduced;
comprising
(1) performing the reduction from a floating diffusion capacitance that stores charge generated in the photodiode;
(2) the photoresistor has a light dependent resistance value that controls the amperage of current flowing through the photoresistor from the floating diffusion capacitance during the decay;
(3) light impinging on the particular pixel includes active light and ambient light;
(4) the incident illuminance of ambient light passing through the first optical filter and incident on the photodiode is equal to the incident illuminance of ambient light passing through the second optical filter and incident on the photoresistor; differ less than 25% in comparison,
(5) The incident illuminance of active light that passes through the second optical filter and enters the photoresistor is less than the incident illuminance of active light that passes through the first optical filter and enters the photodiode. is less than 25%;
(6) said reduction reduces or eliminates the effect of said ambient light on measurements made by said particular pixel.
(Claim 30)
30. The method of claim 29, wherein each of said reduction and said generation occurs continuously through one frame of said camera.
(Claim 31)
30. The method of claim 29, wherein said reduction is performed at least once during each frame of said camera.
(Claim 32)
30. The method of claim 29, wherein said reducing is simultaneous with said generating.
(Claim 33)
(a) performing said production at a production rate;
(b) the generation rate depends on the incident illuminance of light passing through the first optical filter and onto the photodiode;
30. The method of claim 29, wherein (c) said rate of decrease is directly proportional to said rate of production.
(Claim 34)
(a) performing said production at a production rate;
(b) the generation rate depends on the incident illuminance of light passing through the first optical filter and onto the photodiode;
30. The method of claim 29, wherein (c) the rate of decrease is substantially proportional to the rate of generation over one frame of the camera.
(Claim 35)
(a) performing said production at a production rate;
(b) the generation rate depends on the incident illuminance of light passing through the first optical filter and onto the photodiode;
30. The method of claim 29, wherein (c) the rate of decrease tends to be weakly monotonically increasing if the rate of production is weakly monotonically increasing.
(Claim 36)
30. The method of claim 29, wherein the peak frequency of the active light is within a frequency band, the frequency band (a) having a cutoff frequency at half power point and (b) having a bandwidth of less than 5 nanometers. described method.
(Claim 37)
(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband;
30. The method of claim 29, wherein (c) the passband of the first optical filter includes at least one frequency within the frequency band of the active light.
(Claim 38)
(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband that intersects the frequency band of the active light;
30. The method of claim 29, wherein (c) said second optical filter has a passband that does not intersect said frequency band of said active light.
(Claim 39)
30. The method of claim 29, said method also comprising emitting said active light from an active light source.
(Claim 40)
A camera comprising a set of imaging pixels, wherein for each particular imaging pixel in said set:
(a) the specific pixel includes a first photodiode, a second photodiode, a first optical filter, and a second optical filter;
(b) the first photodiode is configured to generate charge in response to light passing through the first optical filter and illuminating the first photodiode;
(c) the camera is configured to deplete a first portion of the charge from the first photodiode by a decreasing rate dependent on the voltage in the area of a transistor forming part of the camera;
(d) the camera determines that the voltage in the region of the transistor (i) controls the amperage of the current flowing through the transistor from the first photodiode during the decrease; and (ii) the second photodiode. 2 configured to be controlled by charge generated within said second photodiode in response to light passing through an optical filter and illuminating said second photodiode;
(e) the camera is configured to read out a residual portion of the charge, the residual portion remaining after the first portion has been reduced;
(1) The first optical filter and the second optical filter are configured so that (i) the incident illuminance of ambient light passing through the first optical filter and incident on the first photodiode is (ii) differ by less than 25% from the incident illuminance of ambient light incident on said second photodiode through said second optical filter; configured such that the incident illuminance of active light incident on the photodiode is less than 25% of the incident illuminance of active light incident on the first photodiode through the first optical filter;
(2) A camera configured such that said reduction of said first portion of said charge reduces or eliminates the effect of said ambient light on measurements made by said particular pixel.
(Claim 41)
41. A camera according to claim 40, wherein each of said reduction and said generation is arranged to occur continuously through one frame of said camera.
(Claim 42)
41. The camera of Claim 40, wherein said reduction is performed at least once during each frame of said camera.
(Claim 43)
41. The camera of Claim 40, wherein said reduction is arranged to occur concurrently with said generation.
(Claim 44)
41. The camera of Claim 40, wherein said rate of decrease is directly proportional to said voltage.
(Claim 45)
41. The camera of Claim 40, wherein said rate of decrease is substantially proportional to said voltage over a frame of said camera.
(Claim 46)
(a) configured to produce said production at a production rate;
41. The camera of claim 40, wherein the rate of decrease is configured to tend to increase weakly and monotonically if the rate of production increases weakly and monotonically.
(Claim 47)
41. The first optical filter of claim 40, wherein said first optical filter has a passband that intersects a frequency band of said active light, said frequency band of said active light having a bandwidth of less than 5 nanometers. camera.
(Claim 48)
(a) said first optical filter has a passband that intersects a frequency band of said active light, said frequency band of said active light having a bandwidth of less than 5 nanometers;
41. The camera of claim 40, wherein (b) said second optical filter has a passband that does not intersect said frequency band of said active light.
(Claim 49)
(a) the camera also includes an active light source;
41. The camera of claim 40, wherein (b) said active light source is configured to emit said active light.
(Claim 50)
A camera comprising a set of imaging pixels, wherein for each particular imaging pixel in said set:
(a) the specific pixel includes a photodiode, a photoresistor, a first optical filter, and a second optical filter;
(b) the photodiode is configured to generate charge in response to light passing through the first optical filter and illuminating the photodiode;
(c) the camera is configured to reduce the first portion of the charge by a decreasing rate dependent on the incident illuminance of light passing through the second optical filter and onto the photoresistor;
(d) the camera performs the reduction from a floating diffusion capacitance forming part of the camera and configured to temporarily store the charge generated in the photodiode; configured,
(e) the photoresistor has a light dependent resistance;
(f) the camera is configured such that the light dependent resistance of the photoresistor controls the amperage of current flowing through the photoresistor from the floating diffusion capacitance during the decay;
(g) the camera is configured to read out a residual portion of the charge, the residual portion remaining after the first portion has been reduced;
(1) The first optical filter and the second optical filter are arranged so that (i) the incident illuminance of ambient light passing through the first optical filter and incident on the photodiode passes through the second optical filter. (ii) differ by less than 25% from the incident illuminance of ambient light incident on the photoresistor through the second optical filter; is less than 25% of the incident illuminance of active light that passes through the first optical filter and is incident on the photodiode;
(2) A camera configured such that said reduction of said first portion of said charge reduces or eliminates the effect of said ambient light on measurements made by said particular pixel.
(Claim 51)
51. A camera according to claim 50, wherein each of said reduction and said generation is arranged to occur continuously through one frame of said camera.
(Claim 52)
51. The camera of Claim 50, wherein said reduction is performed at least once during each frame of said camera.
(Claim 53)
51. The camera of Claim 50, wherein said reduction is arranged to occur concurrently with said generation.
(Claim 54)
(a) performing said production at a production rate;
(b) the rate of production is dependent on the incident illuminance of light passing through the first optical filter and onto the photodiode;
51. The camera of claim 50, wherein (c) said rate of decrease is directly proportional to said rate of generation.
(Claim 55)
(a) performing said production at a production rate;
(b) the generation rate depends on the incident illuminance of light passing through the first optical filter and onto the photodiode;
30. The method of claim 29, wherein (c) over a frame of said particular pixel, said rate of decrease is substantially proportional to said rate of generation.
(Claim 56)
(a) performing said production at a production rate;
(b) the rate of decrease is weakly monotonically increasing if the rate of production is weakly monotonically increasing;
51. A camera according to claim 50, configured to tend to.
(Claim 57)
51. The method of claim 50, wherein said first optical filter has a passband that intersects a frequency band of said active light, said frequency band of said active light having a bandwidth of less than 5 nanometers. camera.
(Claim 58)
(a) said first optical filter has a passband that intersects a frequency band of said active light, said frequency band of said active light having a bandwidth of less than 5 nanometers;
51. The camera of claim 50, wherein (b) said second optical filter has a passband that does not intersect said frequency band of said active light.
(Claim 59)
(a) the camera also includes an active light source;
51. The camera of claim 50, wherein (b) said active light source is configured to emit said active light.

Claims

(a) in the first photodiode of the imaging pixel, charge is generated at a generation rate dependent on a first incident amount, which is the incident illuminance of light incident on the first photodiode after passing through the first optical filter; a step of generating;
(b) reducing a first portion of said charge by a decreasing rate, (i) a second circuit, said decreasing rate being a photoresistor of said imaging pixel through a second optical filter; (ii) effecting said reduction from said first photodiode or said charge-stored third circuit element so as to be at least partially dependent on a second incident dose, which is the incident illuminance of the light impinging on the element; (iii) reducing to effect said reduction from a floating diffusion capacitance storing charge generated by said first photodiode;
(c) reading a residual portion of said charge, said residual portion being that which remained after reducing said first portion;
(1) the light incident on the imaging pixels includes active light and ambient light;
(2) the incident illuminance of the ambient light passing through the first optical filter and onto the first photodiode is equal to the ambient light passing through the second optical filter and onto the second circuit element; differ by less than 25% compared to the incident illuminance of
(3) The incident illuminance of the active light passing through the second optical filter and onto the second circuit element is: (i) passing through the first optical filter onto the first photodiode; is less than 25% of the incident illuminance of the incident active light, and (ii) controls the electrical resistance of the photoresistor, and (iii) thus reduces charge flowing through the photoresistor from the first photodiode. controls the amperage of the current,
(4) the reduction reduces or eliminates the effect of the ambient light on measurements made by the imaging pixels;

2. The method of claim 1, wherein each of said reduction and said generation is performed continuously through one frame of said imaging pixels , said reduction being simultaneous with said generation .

2. The method of claim 1, wherein said reduction is performed at least once during each frame of said imaging pixels.

the rate of decrease is directly proportional to the incident illuminance incident on the second circuit element;
over a frame of the imaging pixels, the rate of decrease is substantially proportional to the incident illumination incident on the second circuit element;
2. The method of claim 1 , wherein said rate of decrease is directly proportional to the amount of charge accumulated based on light impinging on said second circuit element .

2. The method of claim 1, wherein the rate of decrease tends to be weakly monotonically increasing if the rate of production is weakly monotonically increasing.

2. The method of claim 1, wherein the peak frequency of the active light is within a frequency band, the frequency band (a) having a cutoff frequency at half power point and (b) having a bandwidth of less than 5 nanometers. described method.

(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband;
2. The method of claim 1, wherein (c) the passband of the first optical filter includes at least one frequency within the frequency band of the active light.

(a) said active light has a peak frequency within a frequency band, said frequency band (i) having a cutoff frequency at half power point and (ii) having a bandwidth of less than 5 nanometers; ,
(b) the first optical filter has a passband that intersects the frequency band of the active light;
2. The method of claim 1, wherein (c) said second optical filter has a passband that does not intersect said frequency band of said active light.

(a) the imaging pixel is one of a set of imaging pixels in a camera;
2. The method of claim 1, wherein (b) said method also includes performing said generating and said decreasing at each other pixel in said set.

A camera comprising a set of imaging pixels, wherein for each particular imaging pixel in said set:
(a) the specific pixel includes a photodiode, a photoresistor, a first optical filter, and a second optical filter;
(b) the photodiode is configured to generate charge in response to light passing through the first optical filter and illuminating the photodiode;
(c) the camera is configured to reduce the first portion of the charge by a decreasing rate dependent on the incident illuminance of light passing through the second optical filter and onto the photoresistor;
(d) the camera performs the reduction from a floating diffusion capacitance forming part of the camera and configured to temporarily store the charge generated in the photodiode; configured,
(e) the photoresistor has a light dependent resistance;
(f) the camera is configured such that the light dependent resistance of the photoresistor controls the amperage of current flowing through the photoresistor from the floating diffusion capacitance during the decay;
(g) the camera is configured to read out a residual portion of the charge, the residual portion remaining after the first portion has been reduced;
(1) The first optical filter and the second optical filter are arranged so that (i) the incident illuminance of ambient light passing through the first optical filter and incident on the photodiode passes through the second optical filter. (ii) differ by less than 25% from the incident illuminance of ambient light incident on the photoresistor through the second optical filter; is less than 25% of the incident illuminance of active light that passes through the first optical filter and is incident on the photodiode;
(2) A camera configured such that said reduction of said first portion of said charge reduces or eliminates the effect of said ambient light on measurements made by said particular pixel.

wherein each of said reduction and said generation is configured to occur continuously throughout one frame of said camera ; or wherein said reduction occurs at least once during each frame of said camera; 11. The camera of claim 10 , wherein the

(a) performing said production at a production rate;
(b) the rate of production is dependent on the incident illuminance of light passing through the first optical filter and onto the photodiode;
11. The camera of claim 10 , wherein (c) said rate of decrease is directly proportional to said rate of generation.

(a) performing said production at a production rate;
11. The camera of claim 10 , wherein: (b) the rate of decrease tends to increase weakly and monotonically when the rate of production increases weakly and monotonically.

(a) said first optical filter has a passband that intersects a frequency band of said active light, said frequency band of said active light having a bandwidth of less than 5 nanometers;
11. The camera of claim 10 , wherein (b) said second optical filter has a passband that does not intersect said frequency band of said active light.

(a) the camera also includes an active light source;
11. The camera of claim 10 , wherein (b) said active light source is configured to emit said active light.