JPWO2020241168A1 - - Google Patents

Info

Publication number
JPWO2020241168A1
JPWO2020241168A1 JP2021522735A JP2021522735A JPWO2020241168A1 JP WO2020241168 A1 JPWO2020241168 A1 JP WO2020241168A1 JP 2021522735 A JP2021522735 A JP 2021522735A JP 2021522735 A JP2021522735 A JP 2021522735A JP WO2020241168 A1 JPWO2020241168 A1 JP WO2020241168A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021522735A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2020241168A1 publication Critical patent/JPWO2020241168A1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30Devices controlled by radiation
    • H10K39/32Organic image sensors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Signal Processing (AREA)
  • Multimedia (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021522735A 2019-05-24 2020-04-30 Pending JPWO2020241168A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019097457 2019-05-24
PCT/JP2020/018224 WO2020241168A1 (ja) 2019-05-24 2020-04-30 撮像素子、積層型撮像素子及び固体撮像装置、並びに、無機酸化物半導体材料

Publications (1)

Publication Number Publication Date
JPWO2020241168A1 true JPWO2020241168A1 (ja) 2020-12-03

Family

ID=73552571

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021522735A Pending JPWO2020241168A1 (ja) 2019-05-24 2020-04-30

Country Status (3)

Country Link
US (1) US20220255027A1 (ja)
JP (1) JPWO2020241168A1 (ja)
WO (1) WO2020241168A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11744091B2 (en) 2017-12-05 2023-08-29 Sony Corporation Imaging element, stacked-type imaging element, and solid-state imaging apparatus to improve charge transfer
US11705530B2 (en) * 2018-04-20 2023-07-18 Sony Corporation Imaging device, stacked imaging device, and solid-state imaging apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5395994B2 (ja) * 2005-11-18 2014-01-22 出光興産株式会社 半導体薄膜、及びその製造方法、並びに薄膜トランジスタ
US8017045B2 (en) * 2008-04-16 2011-09-13 Electronics And Telecommunications Research Institute Composition for oxide semiconductor thin film and field effect transistor using the composition
KR102355558B1 (ko) * 2014-07-31 2022-01-27 삼성전자주식회사 이미지 센서
JP2016063165A (ja) * 2014-09-19 2016-04-25 株式会社東芝 撮像素子及び固体撮像装置

Also Published As

Publication number Publication date
US20220255027A1 (en) 2022-08-11
WO2020241168A1 (ja) 2020-12-03

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