JPWO2020240689A1 - - Google Patents
Info
- Publication number
- JPWO2020240689A1 JPWO2020240689A1 JP2021521616A JP2021521616A JPWO2020240689A1 JP WO2020240689 A1 JPWO2020240689 A1 JP WO2020240689A1 JP 2021521616 A JP2021521616 A JP 2021521616A JP 2021521616 A JP2021521616 A JP 2021521616A JP WO2020240689 A1 JPWO2020240689 A1 JP WO2020240689A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/43—Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/1226—Basic optical elements, e.g. light-guiding paths involving surface plasmon interaction
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4212—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element being a coupling medium interposed therebetween, e.g. epoxy resin, refractive index matching material, index grease, matching liquid or gel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2019/021067 WO2020240689A1 (fr) | 2019-05-28 | 2019-05-28 | Dispositif optique |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020240689A1 true JPWO2020240689A1 (fr) | 2020-12-03 |
JP7192979B2 JP7192979B2 (ja) | 2022-12-20 |
Family
ID=73553129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021521616A Active JP7192979B2 (ja) | 2019-05-28 | 2019-05-28 | 光デバイス |
Country Status (3)
Country | Link |
---|---|
US (1) | US11940663B2 (fr) |
JP (1) | JP7192979B2 (fr) |
WO (1) | WO2020240689A1 (fr) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4857973A (en) * | 1987-05-14 | 1989-08-15 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon waveguide with monolithically integrated Schottky barrier photodetector |
US20040173865A1 (en) * | 2003-03-04 | 2004-09-09 | Scales Christine Ann | Schottky barrier photodetectors |
US20170194514A1 (en) * | 2014-05-27 | 2017-07-06 | Karlsruher Institut für Technologie | Plasmonic component and plasmonic photodetector and method for producing same |
WO2019038598A1 (fr) * | 2017-08-22 | 2019-02-28 | Rockley Photonics Limited | Photodétecteur schottky |
-
2019
- 2019-05-28 WO PCT/JP2019/021067 patent/WO2020240689A1/fr active Application Filing
- 2019-05-28 US US17/612,505 patent/US11940663B2/en active Active
- 2019-05-28 JP JP2021521616A patent/JP7192979B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4857973A (en) * | 1987-05-14 | 1989-08-15 | The United States Of America As Represented By The Secretary Of The Air Force | Silicon waveguide with monolithically integrated Schottky barrier photodetector |
US20040173865A1 (en) * | 2003-03-04 | 2004-09-09 | Scales Christine Ann | Schottky barrier photodetectors |
US20170194514A1 (en) * | 2014-05-27 | 2017-07-06 | Karlsruher Institut für Technologie | Plasmonic component and plasmonic photodetector and method for producing same |
WO2019038598A1 (fr) * | 2017-08-22 | 2019-02-28 | Rockley Photonics Limited | Photodétecteur schottky |
Also Published As
Publication number | Publication date |
---|---|
US20220206235A1 (en) | 2022-06-30 |
JP7192979B2 (ja) | 2022-12-20 |
WO2020240689A1 (fr) | 2020-12-03 |
US11940663B2 (en) | 2024-03-26 |
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