JPWO2020214531A5

JPWO2020214531A5 -

Info

Publication number: JPWO2020214531A5
Application number: JP2021561639A
Authority: JP
Publication date: 2023-04-20

Claims

A method for producing a single crystal silicon ingot by the continuous Czochralski method, comprising:
adding an initial charge of polycrystalline silicon to the crucible;
heating the crucible containing the initial charge of polycrystalline silicon to form a silicon melt in the crucible, wherein the silicon melt contains an initial volume of molten silicon and an initial melt height; have a degree level;
contacting a silicon seed crystal with a silicon melt;
pulling the silicon seed crystal to grow a neck, wherein the silicon seed crystal is pulled at a neck pull rate during growth of the neck;
pulling the silicon seed crystal to grow an outwardly-flaring seed cone adjacent to the neck, wherein the silicon seed crystal is pulled at a seed cone pulling rate during growth of the outwardly-flaring seed cone; and pulling the silicon seed crystal to grow a body of the monocrystalline silicon ingot adjacent to an outwardly-flaring seed cone, wherein the silicon melt flows during growth of the body of the monocrystalline silicon ingot. contains a volume of molten silicon and a melt height level,
including
The body of said monocrystalline silicon ingot has a first variable region (wherein the pulling speed decreases from the first pulling speed to a second pulling speed) and a second variable region ( wherein the pulling speed increases from the second pulling speed to a constant body pulling speed, wherein the body of the single crystal silicon ingot is grown under an initial variable body pulling speed condition ; is grown under the initial variable body pull rate condition for less than about 20% of the body length of the single crystal silicon ingot, and is at least about 30% of the body length of the single crystal silicon ingot; is grown at a constant body pull-up speed, said constant body pull-up speed removing agglomerated point defects over the body length of the single crystal silicon ingot grown at said constant body pull-up speed. a constant critical pulling rate sufficient to avoid; continuously feeding polycrystal into the crucible, thereby increasing the volume of molten silicon and the melt height in the crucible during the growth of the body of said monocrystalline silicon ingot; and a magnetic field is applied to the silicon melt during growth of the body of the monocrystalline silicon ingot .

2. The method of claim 1 , wherein a horizontal magnetic field is applied to the silicon melt during growth of the body of the monocrystalline silicon ingot.

2. The method of claim 1 , wherein a tip magnetic field is applied to the silicon melt during growth of the body of the single crystal silicon ingot .

The method of claim 1 , wherein the applied magnetic field maintains a substantially constant melt/solid interface profile during about 70% to about 90% of the growth of the body of the single crystal silicon ingot.

2. The method of manufacturing of claim 1 , wherein the body of the monocrystalline silicon ingot is at least about 1000 millimeters long, at least 1400 millimeters long, or at least 1500 millimeters long.

2. The method of manufacturing of claim 1 , wherein the body of the monocrystalline silicon ingot is at least 2000 millimeters long, at least 2200 millimeters long, at least about 3000 millimeters long, or at least about 4000 millimeters long.

2. The method of manufacturing of claim 1 , wherein the body of the single crystal silicon ingot has a diameter of at least about 150 millimeters, or at least about 200 millimeters.

3. The method of claim 1 , wherein the body of the monocrystalline silicon ingot has a diameter of at least about 300 millimeters, or at least about 450 millimeters.

The constant body pull rate is from about 0.4 mm/min to about 0.8 mm/min, from about 0.4 mm/min to about 0.7 mm/min, or from about 0.4 mm/min to about 0.65 mm/min. 2. The manufacturing method according to claim 1, wherein the manufacturing method is minutes.

2. The monocrystalline silicon ingot body of claim 1 , wherein the monocrystalline silicon ingot body is grown under an initial variable body pull rate condition for about 5% to about 20% of the monocrystalline silicon ingot body length. Production method.

The method of claim 1 , wherein the body of the single crystal silicon ingot is grown at a constant body pull rate during growth of at least about 50% of the body length of the single crystal silicon ingot.

The method of claim 1 , wherein the body of the single crystal silicon ingot is grown at a constant body pull rate during growth of at least about 70% of the body length of the single crystal silicon ingot.

The method of claim 1 , wherein the body of the single crystal silicon ingot is grown at a constant body pull rate during growth of at least about 80% of the body length of the single crystal silicon ingot.

The method of claim 1 , wherein the body of the single crystal silicon ingot is grown at a constant body pull rate during growth of at least about 90% of the body length of the single crystal silicon ingot.

The method of claim 1 , wherein the body pull speed is a constant critical pull speed sufficient to avoid agglomerated point defects over at least 70% of the body length of the single crystal silicon ingot. .

The method of claim 1 , wherein the body pull speed is a constant critical pull speed sufficient to avoid agglomerated point defects over at least 90% of the body length of the single crystal silicon ingot. .

2. The method of claim 1 , wherein the volume of molten silicon changes by no more than about 1.0% by volume during growth of at least about 90% of the body of the single crystal silicon ingot.

2. The method of claim 1 , wherein the volume of molten silicon changes by no more than about 0.5% by volume during growth of at least about 90% of the body of the single crystal silicon ingot.

2. The method of claim 1 , wherein the volume of molten silicon changes by no more than about 0.1% by volume during growth of at least about 90% of the body of the single crystal silicon ingot.

The method of claim 1 , wherein the melt height level changes by less than about +/−0.5 millimeters during growth of at least about 90% of the body of the single crystal silicon ingot.

2. The method of manufacturing of claim 1 , wherein the body of the monocrystalline silicon ingot comprises complete silicon over at least about 70% of the body length of the monocrystalline silicon ingot.

2. The method of manufacturing of claim 1 , wherein the body of the monocrystalline silicon ingot comprises complete silicon over at least about 80% of the body length of the monocrystalline silicon ingot.

2. The method of manufacturing of claim 1 , wherein the body of the monocrystalline silicon ingot comprises complete silicon over at least about 90% of the body length of the monocrystalline silicon ingot.

wherein the first pull-up speed is between about 0.5 mm/min and about 2.0 mm/min, the second pull-up speed is less than about 0.4 mm/min, and the constant body pull-up speed is The manufacturing method of claim 1, wherein the speed is from about 0.4 mm/min to about 0.8 mm/min.

The first pulling speed is about 1.0 mm/min, the second pulling speed is about 0.3 mm/min to about 0.4 mm/min, and the constant body lifting speed is about The manufacturing method of claim 1, wherein the speed is from 0.4 mm/min to about 0.65 mm/min.