JPWO2020195883A1 - Encapsulating resin composition and semiconductor device - Google Patents

Abstract

The sealing resin composition comprises one or more compounds selected from the group consisting of component (A): 3-amino-1,2,4-triazole and 4-amino-1,2,4-triazole, and Component (B): Contains epoxy resin.

Description

The present invention relates to a sealing resin composition and a semiconductor device.

As a sealing resin composition for sealing an electronic component, there is one described in Patent Document 1 (Japanese Unexamined Patent Publication No. 62-25118). An object of the present invention is to provide a sealing resin composition which prevents ion transfer of a metal and electrolytic corrosion due to an ionic halogen, has excellent moisture resistance, and retains the merits of a conventional composition. As a technique, a sealing resin composition containing an epoxy resin, a novolak type phenol resin, a predetermined amount of 2-vinyl-4,6-diamino-s-triazine and a predetermined amount of an inorganic filler is described. The document states that if a predetermined amount of 2-vinyl-4,6-diamino-s-triazine is blended, a sealing resin composition that prevents electrolytic corrosion and has excellent moisture resistance can be obtained. ..

Japanese Unexamined Patent Publication No. 62-25118

When the present inventor examined the technique described in Patent Document 1, the sealing resin composition described in the same document has adhesion to a metal member and reliability of a semiconductor device obtained by using such a composition. In terms of sex, it became clear that there was room for improvement.
The present invention provides a sealing resin composition capable of obtaining a semiconductor device having excellent adhesion to a metal member and excellent reliability.

According to the present invention
The following components (A) and (B):
(A) One or more compounds selected from the group consisting of 3-amino-1,2,4-triazole and 4-amino-1,2,4-triazole,
(B) A sealing resin composition containing an epoxy resin is provided.

Further, according to the present invention, there is provided a semiconductor device in which a semiconductor element is sealed by the cured product of the sealing resin composition according to the present invention described above.

According to the present invention, it is possible to provide a sealing resin composition capable of obtaining a semiconductor device having excellent adhesion to a metal member and excellent reliability.

It is sectional drawing which shows the structure of the semiconductor device in Embodiment. It is sectional drawing which shows the structure of the semiconductor device in Embodiment.

Hereinafter, embodiments will be described with reference to the drawings. In all the drawings, similar components are designated by a common reference numeral, and the description thereof will be omitted as appropriate. Further, the figure is a schematic view and does not necessarily match the actual dimensional ratio. Further, in the present embodiment, the composition may contain each component alone or in combination of two or more kinds.

(Resin composition for sealing)
In the present embodiment, the sealing resin composition contains the following components (A) and (B).
(A) One or more compounds selected from the group consisting of 3-amino-1,2,4-triazole and 4-amino-1,2,4-triazole (B) Epoxy resin

(Ingredient (A))
The component (A) is an aminotriazole compound, and specifically, one or more selected from the group consisting of 3-amino-1,2,4-triazole and 4-amino-1,2,4-triazole. It is a compound.
The component (A) preferably contains 3-amino-1,2,4-triazole, and more preferably 3-amino-1, from the viewpoint of improving the adhesion to the metal member and being easily available. 2,4-Triazole.

The content of the component (A) in the sealing resin composition is preferably 0, with respect to the entire sealing resin composition, from the viewpoint of stably improving the adhesion between the sealing material and the metal member. It is 01% by mass or more, more preferably 0.02% by mass or more, and further preferably 0.04% by mass or more. Further, from the viewpoint of making the fluidity and storage stability of the sealing resin composition preferable, the content of the component (A) is preferably 1% by mass or less with respect to the entire sealing resin composition. It is more preferably 0.5% by mass or less, still more preferably 0.2% by mass or less.

(Component (B))
The epoxy resin of the component (B) is a compound having two or more epoxy groups in one molecule, and may be any of a monomer, an oligomer and a polymer.
Specifically, the epoxy resin is a crystalline epoxy resin such as a biphenyl type epoxy resin, a bisphenol type epoxy resin, or a stillben type epoxy resin; a novolak type epoxy resin such as a phenol novolac type epoxy resin or a cresol novolac type epoxy resin; a trisphenyl. Polyfunctional epoxy resin such as methane type epoxy resin and alkyl-modified triphenol methane type epoxy resin; phenol aralkyl type epoxy resin containing phenylene skeleton, phenol aralkyl type epoxy resin containing biphenylene skeleton; phenol aralkyl type epoxy resin such as dihydroxynaphthalene type epoxy resin , Naftor-type epoxy resin such as epoxy resin obtained by glycidyl etherification of dihydroxynaphthalene dimer; triazine nucleus-containing epoxy resin such as triglycidyl isocyanurate and monoallyl diglycidyl isocyanurate; dicyclopentadiene-modified phenol-type epoxy resin It is one kind or two or more kinds selected from the group consisting of a bridged cyclic hydrocarbon compound modified phenol type epoxy resin and the like.

From the viewpoint of improving the adhesion to the metal member, the component (B) is preferably a trisphenylmethane type epoxy resin, a biphenyl aralkyl type polyfunctional epoxy resin, an orthocresol type bifunctional epoxy resin, or a biphenyl type bifunctional epoxy resin. And one or more selected from the group consisting of bisphenol type bifunctional epoxy resins.
From the same viewpoint, the component (B) is preferably a tris (hydroxyphenyl) methane type epoxy resin, a biphenylene skeleton-containing phenol aralkyl type epoxy resin, an orthocresol novolac type epoxy resin, and 3,3', 5,5'-. One or more selected from the group consisting of tetramethylbiphenylglycidyl ether type epoxy resins.

The content of the component (B) in the sealing resin composition is preferable with respect to the entire sealing resin composition from the viewpoint of obtaining suitable fluidity at the time of molding and improving the filling property and moldability. Is 2% by mass or more, more preferably 3% by mass or more, still more preferably 4% by mass or more.
Further, from the viewpoint of improving the reliability of the apparatus obtained by using the sealing resin composition, the content of the component (B) in the sealing resin composition is adjusted with respect to the entire sealing resin composition. It is preferably 40% by mass or less, more preferably 30% by mass or less, still more preferably 20% by mass or less, and even more preferably 10% by mass or less.

Further, the sealing resin composition preferably does not contain a maleimide compound. By making the sealing resin composition contain the components (A) and (B) and not containing the maleimide compound, the adhesion between the sealing material obtained by using the sealing resin composition and the metal member It is possible to further improve the curability of the sealing resin composition at a low temperature while improving the above.
Here, the maleimide compound is specifically a compound having two or more maleimide groups. Further, preferably, the maleimide compound is not intentionally blended in the sealing resin composition, and the content of the maleimide compound in the sealing resin composition is preferably substantially 0% by mass. For example, it is below the detection limit.

The sealing resin composition may contain components other than the components (A) and (B). For example, the sealing resin composition may contain one or both of the following components (C) and (D).
(C) Inorganic filler (D) Silane coupling agent

(Component (C))
The component (C) is an inorganic filler. As the inorganic filler, those generally used for semiconductor encapsulation resin compositions can be used. Further, the component (C) may be surface-treated.
Specific examples of the component (C) include fused silica and the like, crystalline silica, silica such as amorphous silicon dioxide; alumina; talc; titanium oxide; silicon nitride; aluminum nitride. These inorganic fillers may be used alone or in combination of two or more.

The component (C) preferably contains silica from the viewpoint of excellent versatility. Examples of the shape of silica include spherical silica and crushed silica.

The average diameter (d ₅₀ ) of the component (C) is preferably 5 μm or more, more preferably 10 μm or more, and preferably 80 μm or less, more preferably, from the viewpoint of improving moldability and adhesion. Is 50 μm or less, more preferably 40 μm or less.
Here, the particle size distribution of the component (C) is obtained by measuring the particle size distribution of the particles on a volume basis using a commercially available laser diffraction type particle size distribution measuring device (for example, SALD-7000 manufactured by Shimadzu Corporation). can do.

The maximum particle size of the component (C) is preferably 10 μm or more, more preferably 20 μm or more, and preferably 100 μm or less, more preferably 100 μm or less, from the viewpoint of improving moldability and adhesion. It is 80 μm or less, more preferably 50 μm or less.

Further, the specific surface area of component (C), from the viewpoint of improving the moldability and adhesiveness, preferably 1 m ² / g or more, more preferably 3m ² / g or more, and preferably 20 m ² / It is g or less, more preferably 10 m ² / g or less.

The content of the component (C) in the sealing resin composition improves the low hygroscopicity and low thermal expansion of the sealing material formed by using the sealing resin composition, and the moisture resistance of the obtained semiconductor device. From the viewpoint of more effectively improving reliability and reflow resistance, the content is preferably 50% by mass or more, more preferably 60% by mass or more, still more preferably 65% by mass, based on the entire sealing resin composition. That is all.
Further, from the viewpoint of more effectively improving the fluidity and filling property of the sealing resin composition during molding, the content of the component (C) in the sealing resin composition is determined by the sealing resin composition. For example, it may be 97% by mass or less, preferably 95% by mass or less, and more preferably 90% by mass or less with respect to the whole.

(Component (D))
The component (D) is a silane coupling agent.
Examples of the component (D) include aminosilanes such as epoxysilane, mercaptosilane, and phenylaminosilane. From the viewpoint of improving the adhesion between the encapsulant and the metal member, the component (D) is preferably epoxysilane or aminosilane, and more preferably secondary aminosilane. From the same viewpoint, the component (D) is preferably one or more selected from the group consisting of phenylaminopropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane and 3-mercaptopropyltrimethoxysilane.

The content of the component (D) in the sealing resin composition is preferably 0.01 with respect to the entire sealing resin composition from the viewpoint of obtaining preferable fluidity during molding of the sealing resin composition. It is mass% or more, more preferably 0.05 mass% or more.
Further, from the viewpoint of suppressing the thickening of the resin viscosity, the content of the component (D) in the sealing resin composition is preferably 2.0% by mass or less with respect to the entire sealing resin composition. , More preferably 1.0% by mass or less, still more preferably 0.5% by mass or less.

(Hardener)
The sealing resin composition may further contain a curing agent. The curing agent can be roughly classified into three types, for example, a polyaddition type curing agent, a catalytic type curing agent, and a condensation type curing agent, and one or more of these can be used.

Examples of the heavy addition type curing agent include aliphatic polyamines such as diethylenetriamine (DETA), triethylenetetramine (TETA), and metaxylylene diamine (MXDA), diaminodiphenylmethane (DDM), and m-phenylenediamine (MPDA). In addition to aromatic polyamines such as diaminodiphenylsulfone (DDS), polyamine compounds containing dicyandiamide (DICY), organic acid dihydralide, etc .; alicyclic acids such as hexahydrophthalic anhydride (HHPA) and methyltetrahydrophthalic anhydride (MTHPA). Acid anhydrides including aromatic acid anhydrides such as anhydrides, trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), benzophenone tetracarboxylic acid (BTDA); phenols such as novolak type phenol resin and polyvinylphenol. Resin curing agents; polyether compounds such as polysulfide, thioester and thioether; isocyanate compounds such as isocyanate prepolymer and blocked isocyanate; organic acids such as carboxylic acid-containing polyester resin and the like can be mentioned.

Catalytic hardeners include tertiary amine compounds such as benzyldimethylamine (BDMA), 2,4,6-trisdimethylaminomethylphenol (DMP-30); 2-methylimidazole, 2-ethyl-4- Examples include imidazole compounds such as methylimidazole (EMI24); Lewis acids such as the _{BF 3 complex.}

Examples of the condensation type curing agent include phenol resins; urea resins such as methylol group-containing urea resins; and melamine resins such as methylol group-containing melamine resins.

Among these, a phenol resin curing agent is preferable from the viewpoint of improving the balance of flame resistance, moisture resistance, electrical characteristics, curability, storage stability and the like. As the phenol resin curing agent, a monomer, an oligomer, or a polymer having two or more phenolic hydroxyl groups in one molecule can be used in general, and the molecular weight and molecular structure thereof are not limited.

Phenolic resin used as a curing agent Examples of the curing agent include novolak-type phenolic resins such as phenol novolac resin, cresol novolak resin, and bisphenol novolak; polyvinylphenol; and polyfunctional types such as phenol / hydroxybenzaldehyde resin and triphenolmethane-type phenol resin. Phenolic resin; modified phenolic resin such as terpene-modified phenolic resin and dicyclopentadiene-modified phenolic resin; phenolaralkyl resin having at least one phenylene skeleton and biphenylene skeleton, naphthol aralkyl resin having at least one phenylene and biphenylene skeleton, etc. Aralkyl-type phenolic resins; examples thereof include bisphenol compounds such as bisphenol A and bisphenol F, and these may be used alone or in combination of two or more. Among these, from the viewpoint of improving the insulating properties of the semiconductor device obtained by using the sealing resin composition, trisphenol methane type phenol resin, biphenyl aralkyl type phenol resin, novolak type phenol resin, biphenylene skeleton-containing phenol aralkyl type. It is more preferable to use one or more selected from the group consisting of a resin and a biphenylene skeleton-containing phenol aralkyl type / formaldehyde polycondensate.

In the present embodiment, the content of the curing agent in the sealing resin composition is the sealing resin composition from the viewpoint of realizing excellent fluidity at the time of molding and improving the filling property and moldability. For example, it is 0.5% by mass or more, preferably 1% by mass or more, more preferably 2% by mass or more, and further preferably 3% by mass or more with respect to the whole.
Further, with respect to the semiconductor device obtained by using the sealing resin composition, the content of the curing agent in the sealing resin composition is determined from the viewpoint of improving the moisture resistance reliability and the reflow resistance. It is preferably 25% by mass or less, more preferably 15% by mass or less, and further preferably 10% by mass or less with respect to the whole product.

Further, the sealing resin composition may contain components other than the above-mentioned components, for example, a curing accelerator, a fluidity imparting agent, a mold release agent, an ion scavenger, a low stress component, a flame retardant, a coloring agent, and oxidation. One or more of various additives such as an inhibitor can be appropriately blended. The sealing resin composition includes, for example, 2-hydroxy-N-1H-1,2,4-triazole-3-ylbenzamide and 3-amino-5-mercapto-1,2,4-triazole. 1 or more may be further included.

Among these, the curing accelerator is a phosphorus atom-containing compound such as an organic phosphine, a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound; 8-diazabicyclo [5.4.0] Undecene-7, benzyldimethylamine, 2-methylimidazole and the like are exemplified by amidines and tertiary amines, and nitrogen atom-containing compounds such as the above-mentioned quaternary salts of amidines and amines; 2, It can contain one or more selected from polyhydroxynaphthalene compounds such as 3-dihydroxynaphthalene. Among these, it is more preferable to contain a phosphorus atom-containing compound from the viewpoint of improving curability. Further, from the viewpoint of improving the balance between moldability and curability, it has latent properties such as a tetra-substituted phosphonium compound, a phosphobetaine compound, an adduct of a phosphine compound and a quinone compound, and an adduct of a phosphonium compound and a silane compound. It is more preferable to include one.

The content of the curing accelerator in the sealing resin composition is preferably 0.01% by mass or more with respect to the entire sealing resin composition from the viewpoint of improving the curing characteristics of the sealing resin composition. It is more preferably 0.05% by mass or more, still more preferably 0.1% by mass or more.
Further, from the viewpoint of obtaining preferable fluidity during molding of the sealing resin composition, the content of the curing accelerator in the sealing resin composition is preferably 2. It is 0% by mass or less, more preferably 1.0% by mass or less, and further preferably 0.5% by mass or less.

Release agents are from natural waxes such as carnauba wax; synthetic waxes such as montanic acid ester wax and polyethylene oxide wax; higher fatty acids such as zinc stearate and their metal salts; paraffin; and carboxylic acid amides such as erucic acid amide. Can include one or more selected from the group.
The content of the release agent in the sealing resin composition is preferably 0, with respect to the entire sealing resin composition, from the viewpoint of improving the releasability of the cured product of the sealing resin composition. It is 01% by mass or more, more preferably 0.05% by mass or more, further preferably 0.1% by mass or more, and preferably 2.0% by mass or less, more preferably 1.0% by mass. Hereinafter, it is more preferably 0.5% by mass or less.

Hydrotalcite is a specific example of the ion scavenger.
The content of the ion scavenger in the sealing resin composition is preferably 0.01% by mass or more with respect to the entire sealing resin composition from the viewpoint of improving the reliability of the sealing material. It is more preferably 0.05% by mass or more, preferably 1.0% by mass or less, and more preferably 0.5% by mass or less.

Specific examples of the low stress component include silicones such as silicone oil, silicone rubber, silicone elastomer, and silicone resin; and acrylonitrile butadiene rubber.
The content of the low stress component in the sealing resin composition is preferably 0.01% by mass or more with respect to the entire sealing resin composition from the viewpoint of improving the reliability of the sealing material. It is more preferably 0.05% by mass or more, further preferably 0.1% by mass or more, preferably 5% by mass or less, more preferably 3% by mass or less, still more preferably 1% by mass or less. ..

Specific examples of the flame retardant include aluminum hydroxide, magnesium hydroxide, zinc borate, zinc molybdate, and phosphazene.
The content of the flame retardant in the sealing resin composition is preferably 1% by mass or more, more preferably 1% by mass or more, based on the entire sealing resin composition from the viewpoint of improving the flame retardancy of the sealing material. Is 5% by mass or more, preferably 20% by mass or less, and more preferably 10% by mass or less.

Specific examples of the colorant include carbon black and red iron oxide.
The content of the colorant in the sealing resin composition is preferably 0.1% by mass or more with respect to the entire sealing resin composition from the viewpoint of making the color tone of the sealing material preferable. It is more preferably 0.2% by mass or more, preferably 2% by mass or less, and more preferably 1% by mass or less.

Specific examples of the antioxidant include hindered phenol compounds, hindered amine compounds, and thioether compounds.

Next, the physical characteristics of the sealing resin composition or the cured product thereof will be described.
When the sealing resin composition of the present embodiment was cured on a copper plate at 175 ° C. for 180 seconds to obtain a cured product, and further heated at 175 ° C. for 3 hours, the die share strength between the copper plate and the cured product was obtained. However, at room temperature (25 ° C., the same applies hereinafter), it is preferably 10 MPa or more, and more preferably 12 MPa or more. By setting in this way, for example, even when an element that generates a large amount of heat is used as a semiconductor device or when a device exposed to higher temperature conditions is manufactured, higher reliability can be ensured. ..
From the same viewpoint, when a cured product is obtained by curing on a copper plate under the above conditions and further heated under the above conditions, the die shear strength between the copper plate and the cured product is preferably 0.95 MPa or more at 260 ° C. , More preferably 1.0 MPa or more, still more preferably 1.1 MPa or more.
The upper limit of the die shear strength is not limited, but is, for example, 30 MPa or less at room temperature or 260 ° C.

Further, when the sealing resin composition of the present embodiment was cured on a nickel plate at 175 ° C. for 180 seconds to obtain a cured product, and further heated at 175 ° C. for 3 hours, the nickel plate and the cured product were obtained. The die shear strength with and is preferably 5.0 MPa or more, more preferably 7.0 MPa or more, still more preferably 7.5 MPa or more, still more preferably 10 MPa or more at room temperature. By setting in this way, for example, even when an element that generates a large amount of heat is used as a semiconductor device or when a device exposed to higher temperature conditions is manufactured, higher reliability can be ensured. ..
From the same viewpoint, when a cured product is obtained by curing on a nickel plate under the above conditions and further heated under the above conditions, the die shear strength between the nickel plate and the cured product is preferably 0.5 MPa or more at 260 ° C. It is more preferably 0.7 MPa or more, still more preferably 1.0 MPa or more.
The upper limit of the die shear strength is not limited, but is, for example, 30 MPa or less at room temperature or 260 ° C.
The method for measuring the die shear strength will be described later in the section of Examples.

Next, the shape of the sealing resin composition will be described.
In the present embodiment, the shape of the sealing resin composition can be selected according to the molding method of the sealing resin composition and the like, for example, tablet-like, powder-like, granule-like and other particle-like; sheet-like. Can be mentioned.

Regarding the method for producing the sealing resin composition, for example, each of the above-mentioned components is mixed by a known means, melt-kneaded by a kneader such as a roll, a kneader or an extruder, cooled, and then pulverized. It can be obtained by the method. Further, after pulverization, the resin composition for encapsulation in the form of particles or sheets may be obtained by molding. For example, a tablet-shaped encapsulating resin composition may be obtained. Further, for example, a sheet-shaped sealing resin composition may be obtained by a vacuum extruder. Further, the dispersity, fluidity and the like of the obtained sealing resin composition may be adjusted as appropriate.

Since the sealing resin composition obtained in the present embodiment contains the components (A) and (B), it has excellent adhesion to the metal member. More specifically, according to the present embodiment, it is also possible to improve the adhesion between the sealing material and a member made of Ag, Ni, Cu or an alloy containing one or more of these.
Further, by using the sealing resin composition obtained in the present embodiment, a semiconductor device having excellent reliability can be obtained.

(Semiconductor device)
In the semiconductor device of the present embodiment, the semiconductor element is sealed by the cured product of the sealing resin composition of the present embodiment described above. Specific examples of semiconductor devices include integrated circuits, large-scale integrated circuits, transistors, thyristors, diodes, solid-state image sensors, and the like. The semiconductor element is preferably a so-called element that does not allow light to enter or exit, excluding optical semiconductor elements such as a light receiving element and a light emitting element (light emitting diode or the like).

The base material of the semiconductor device is, for example, a wiring board such as an interposer or a lead frame. Further, the semiconductor element is electrically connected to the base material by wire bonding, flip chip connection, or the like.

Examples of the semiconductor device obtained by sealing the semiconductor element by sealing molding using the sealing resin composition include MAP (Mold Array Package), QFP (Quad Flat Package), SOP (Small Outline Package), and the like. CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), BGA (Ball Grid Array), LF-BGA (Lead Flame BGA), FCBGA (Flip Chip BGA), Types such as MAPBGA (Molded Array Process BGA), eWLB (Embedded Wafer-Level BGA), Fan-In type eWLB, and Fan-Out type eWLB can be mentioned.
Hereinafter, a more specific description will be given with reference to the drawings.

1 and 2 are cross-sectional views showing the configuration of a semiconductor device. In this embodiment, the configuration of the semiconductor device is not limited to that shown in FIGS. 1 and 2.
First, the semiconductor device 100 shown in FIG. 1 includes a semiconductor element 20 mounted on the substrate 30 and a sealing material 50 for sealing the semiconductor element 20.
The sealing material 50 is composed of a cured product obtained by curing the sealing resin composition according to the present embodiment described above.

Further, FIG. 1 illustrates a case where the substrate 30 is a circuit board. In this case, as shown in FIG. 1, for example, a plurality of solder balls 60 are formed on the other surface of the substrate 30 opposite to the one on which the semiconductor element 20 is mounted. The semiconductor element 20 is mounted on the substrate 30 and is electrically connected to the substrate 30 via the wire 40. On the other hand, the semiconductor element 20 may be flip-chip mounted on the substrate 30. Here, the wire 40 is not limited, and examples thereof include Ag wire, Ni wire, Cu wire, Au wire, and Al wire, and preferably, the wire 40 is Ag, Ni, Cu, or one or more of them. Consists of an alloy containing.

The sealing material 50 seals the semiconductor element 20 so as to cover the other surface of the semiconductor element 20 on the side opposite to the one facing the substrate 30. In the example shown in FIG. 1, the sealing material 50 is formed so as to cover the other surface and the side surface of the semiconductor element 20.
In the present embodiment, the sealing material 50 is composed of a cured product of the above-mentioned sealing resin composition. Therefore, in the semiconductor device 100, the adhesion between the sealing material 50 and the wire 40 is excellent, and thus the semiconductor device 100 is excellent in reliability.
The sealing material 50 can be formed, for example, by sealing and molding a sealing resin composition using a known method such as a transfer molding method or a compression molding method.

FIG. 2 is a cross-sectional view showing the configuration of the semiconductor device 100 according to the present embodiment, and shows an example different from that of FIG. The semiconductor device 100 shown in FIG. 2 uses a lead frame as the substrate 30. In this case, the semiconductor element 20 is mounted on the die pad 32 of the substrate 30, for example, and is electrically connected to the outer lead 34 via the wire 40. Further, the sealing material 50 is composed of a cured product of the sealing resin composition in the present embodiment in the same manner as in the example shown in FIG.

Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above can be adopted.

Hereinafter, the present embodiment will be described in detail with reference to Examples and Comparative Examples. The present embodiment is not limited to the description of these examples.

(Examples 1 to 7, Comparative Examples 1 to 7)
(Preparation of resin composition for sealing)
For each Example and each Comparative Example, a sealing resin composition was prepared as follows.
First, each component shown in Table 1 was mixed by a mixer. Then, the obtained mixture was roll-kneaded, cooled and pulverized to obtain a sealing resin composition which is a powder or granular material.

Details of each component in Table 1 are as follows. Further, the blending ratio of each component shown in Table 1 indicates the blending ratio (mass%) with respect to the entire resin composition.
(material)
(Inorganic filler)
(C) Inorganic filler 1: Fused spherical silica, FB series, manufactured by Denka (average diameter 27.2 μm, specific surface area 1.5 m ² / g, upper limit cut 75 μm)
(C) Inorganic filler 2: Fused silica, FMT-05, manufactured by Fumitech (C) Inorganic filler 3: Fused spherical silica, FB-105, manufactured by Denka (average diameter 10.6 μm, specific surface area 5.1 m ²⁾ / G, upper limit cut 71 μm)
(C) Inorganic filler 4: Fused spherical silica S30-71 99.35% by mass surface-treated with KBM-903 (γ-aminopropyltriethoxysilane) 0.65% by mass, manufactured by Micron Co., Ltd. (average diameter 23) .1 μm, specific surface area 1.75 m ² / g, upper limit cut 75 μm)
(C) Inorganic filler 5: fused spherical silica, TS13-006, manufactured by Micron (average diameter 28 μm, specific surface area 2.5 m ² / g, upper limit cut 75 μm)
(C) Inorganic filler 6: Fused spherical silica ES series, manufactured by Tokai Mineral Co., Ltd. (average diameter 28.0 μm, specific surface area 1.0 m ² / g, upper limit cut 75 μm)
(C) Inorganic filler 7: Fused silica, FMT-15C, manufactured by Fumitec Co., Ltd. (C) Inorganic filler 8: Fused spherical silica, FB series, manufactured by Denka (average diameter 31 μm, specific surface area 1.6 m ² / g)
(C) Inorganic filler 9: Amorphous silicon dioxide (ES-355 manufactured by Tokai Mineral Co., Ltd.) 99.35% by mass is surface-treated with 0.65% by mass of γ-aminopropyltriethoxysilane (C) Inorganic Filler 10: Spherical alumina, CB-60C, manufactured by Showa Denko Co., Ltd.

(C) Inorganic filler 11: Silazane-treated fine silica, SC-2500-SQ, manufactured by Admatex (C) Inorganic filler 12: Fused spherical silica, SC-2500-SQ, manufactured by Admatex (C) Inorganic filling Material 13: Fused spherical silica, SC-5500-SQ, Admatex (C) Inorganic filler 14: Alumina, Admatex (C) Inorganic filler 15: Fused spherical silica, Leoloseal CP102, Tokuyama

(Silane coupling agent)
(D) Silane coupling agent 1: Phenylaminopropyltrimethoxysilane, CF-4083, manufactured by Toray Dowcorning Co., Ltd. (D) Silane coupling agent 2: γ-glycidoxypropyltrimethoxysilane, GPS-M, JNC (D) Silane Coupling Agent 3: 3-Mercaptopropyltrimethoxysilane, manufactured by JNC

(Epoxy resin)
(B) Epoxy resin 1: Tris (hydroxyphenyl) methane type epoxy resin, E1032H60, manufactured by Mitsubishi Chemical Co., Ltd. (B) Epoxy resin 2: Biphenylene skeleton-containing phenol aralkyl type epoxy resin, NC3000, manufactured by Nippon Kayaku Co., Ltd. (B) Epoxy Resin 3: Orthocresol novolac type epoxy resin, YDCN-800-62, manufactured by Nippon Steel Chemical Co., Ltd. (B) Epoxy resin 4: Orthocresol novolac type epoxy resin, YDCN-800-65, manufactured by Nippon Steel Chemical Co., Ltd. (B) ) Epoxy resin 5: Orthocresol novolac type epoxy resin, N685EXP-S, manufactured by DIC (B) Epoxy resin 6: 3,3', 5,5'-tetramethylbiphenylglycidyl ether type epoxy resin, YX4000HK, Mitsubishi Chemical Co., Ltd. (B) Epoxy resin 7: Biphenylene skeleton-containing phenol aralkyl type epoxy resin, NC3000L, manufactured by Nippon Kayakusha

(Hardener)
Hardener 1: Trisphenol methane type phenol resin, MEH-7500, Meiwa Kasei Co., Ltd. Hardener 2: Biphenylene skeleton-containing phenol aralkyl type resin, MEH-7851SS, Meiwa Kasei Co., Ltd. Hardener 3: Biphenylene skeleton-containing phenol aralkyl type ・Formaldehyde polycondensate, hardener manufactured by Meiwa Kasei Co., Ltd. 4: Novorac type phenol resin, PR-51714, hardener manufactured by Sumitomo Bakelite Co., Ltd. 5: Novolak type phenol resin, PR-55617, manufactured by Sumitomo Bakelite Co., Ltd.

(Curing accelerator)
Curing Accelerator 1: 4-Hydroxy-2- (Triphenylphosphonium) Phenolate Curing Accelerator 2: Tetraphenylphosphonium · 4,4'-Sulfonyldiphenolate Curing Accelerator 3: Triphenylphosphine, PP-360 Bifun, Kay・ Ai Kasei's curing accelerator 4: tetraphenylphosphonium and bis (naphthalen-2,3-dioxy) phenyl silicate additive, Sumitomo Bakelite's curing accelerator 5: 2,3-dihydroxynaphthalene, Air Water Hardening accelerator 6: 4-Hydroxy-2- (triphenylphosphonium) phenolate, manufactured by Keiai Kasei Co., Ltd.

(Release agent)
Release agent 1: Carnauba wax, C-WAX, Toa Kasei Co., Ltd. Release agent 2: Montanoic acid ester wax, Ricowax E, Clariant Japan company Release agent 3: Carnauba wax, TOWAX-132, Toa Synthetic company Release agent 4: Elcaic acid amide, Alflo P-10, Nichiyu Co., Ltd. Release agent 5: Polyethylene oxide wax, Lycowax PED191, Clariant Japan Co., Ltd.

(Ion scavenger)
Ion scavenger 1: Magnesium, aluminum, hydroxide, carbonate, hydrate, DHT-4H, manufactured by Kyowa Chemical Industry Co., Ltd. (flame retardant)
Flame Retardant 1: Aluminum Hydroxide, CL-303, manufactured by Sumitomo Chemical Co., Ltd.

(Additive)
Additives 1: 2-Hydroxy-N-1H-1,2,4-triazole-3-ylbenzamide, CDA-1M, ADEKA Additives 2: 3-Amino-5 Mercapto-1,2,4- Triazole, ASTA-P, manufactured by Nippon Carbide Industries, Ltd. (A) Additive 3: 3-amino-1,2,4-triazole

(Colorant)
Colorant 1: Carbon black, carbon # 5, manufactured by Mitsubishi Chemical Corporation Colorant 2: carbon black, ERS-2001, manufactured by Tokai Carbon Co., Ltd.

(Low stress agent)
Low stress agent 1: Silicone resin, KR-480, Shin-Etsu Chemical Co., Ltd. Low stress agent 2: Silicone elastomer, CF-2152, Toray Dow Corning Co., Ltd. Low stress agent 3: Acrylonitrile butadiene rubber, CTBN10008SP, Ube Kosan Co., Ltd. Stress agent 4: Silicone oil, FZ-3730, low stress agent manufactured by Toray Dow Corning 5: Molten reaction product A obtained in Production Example 1.

(Manufacturing Example 1)
Epoxy resin represented by the following formula (8) (bisphenol A type epoxy resin, manufactured by Javane Epoxy Resin, jER® YL6810, softening point 45 ° C., epoxy equivalent 172) 66.1 parts by mass was added at 140 ° C. After hot melting, 33.1 parts by mass of organopolysiloxane 1 (organopolysiloxane represented by the following formula (7)) and 0.8 parts by mass of triphenylphosphine are added, and the mixture is melt-mixed for 30 minutes to melt the reaction product A. Got

(In the above formula (7), the average value of n7 is 7.5.)

(Evaluation)
Using the resin compositions obtained in each example, evaluation samples were prepared by the following methods, and the adhesion and reliability of the obtained samples were evaluated by the following methods.

(Adhesion)
For the sealing resin composition obtained in each example, the die shear strength in post-mold cure (PMC) was measured by the following method as an index of adhesion.
For the sealing resin composition obtained in each example, a low-pressure transfer molding machine (manufactured by Yamashiro Seiki Co., Ltd., "AV-600-50-TF") was used to mold temperature 175 ° C., injection pressure 10 MPa, curing time. Under the condition of 180 seconds, 10 pieces of 3.6 mmφ × 3 mm adhesion strength test pieces were formed on a 9 × 29 mm strip-shaped test copper lead frame or a nickel plate.
Then, for the sample cured under the condition of 175 ° C. for 3 hours, the die shear strength was measured at room temperature (RT) or 260 ° C. using an automatic die shear measuring device (DAGE4000 type manufactured by Nordson Advanced Technology Co., Ltd.). , The die shear strength (MPa) was determined.

(Reliability: Temperature cycle test)
The sealing resin composition obtained in each example was TO-220 at a mold temperature of 175 ° C., an injection pressure of 10 MPa, and a curing time of 180 seconds using a low-pressure transfer molding machine (“MSL-06M” manufactured by Apic Yamada Corporation). (Package size: 114 mm × 30 mm, thickness: 1.3 mm, chip not mounted, lead frame made of Cu or Ni-plated product) was molded and cured at 175 ° C. for 4 hours to prepare a semiconductor device for testing. The sealed test semiconductor device was repeatedly subjected to a temperature cycle test at −40 ° C. to 150 ° C. for 100 cycles to determine the presence or absence of package cracks and peeling between members. The measurement results are represented by "number of defects / number of samples" in Table 1. Those with "number of defects / number of samples" of 4/10 or less were regarded as acceptable.

From Table 1, Example 1 and Comparative Example 1, Example 2 and Comparative Example 2, Example 3 and Comparative Example 3, Example 4 and Comparative Example 4, Example 5 and Comparative Example 5, and Example 6 and Comparative Example. 6. Comparing Example 7 and Comparative Example 7, the sealing resin composition obtained in each Example was excellent in adhesion to the metal member. Further, by using the sealing resin composition obtained in each example, a semiconductor device having excellent reliability was obtained.

This application claims priority on the basis of Japanese Application Japanese Patent Application No. 2019-061427 filed on March 27, 2019, and incorporates all of its disclosures herein.

20 Semiconductor element 30 Substrate 32 Die pad 34 Outer lead 40 Wire 50 Encapsulant 60 Solder ball 100 Semiconductor device

Although the embodiments of the present invention have been described above, these are examples of the present invention, and various configurations other than the above can be adopted.
Hereinafter, an example of the reference form will be added.
[1]
The following components (A) and (B):
(A) One or more compounds selected from the group consisting of 3-amino-1,2,4-triazole and 4-amino-1,2,4-triazole,
(B) Epoxy resin
A resin composition for encapsulation.
[2]
The component (B) is selected from the group consisting of trisphenylmethane type epoxy resin, biphenyl aralkyl type polyfunctional epoxy resin, orthocresol type bifunctional epoxy resin, biphenyl type bifunctional epoxy resin and bisphenol type bifunctional epoxy resin. The sealing resin composition according to the above [1], which is one kind or two or more kinds.
[3]
Component (C): The sealing resin composition according to the above [1] or [2], further comprising an inorganic filler.
[4]
Component (D): The sealing resin composition according to any one of the above [1] to [3], further comprising a silane coupling agent.
[5]
The seal according to any one of the above [1] to [4], wherein the content of the component (A) is 0.01% by mass or more and 1% by mass or less with respect to the entire sealing resin composition. Resin composition for stopping.
[6]
A semiconductor device in which a semiconductor element is sealed by a cured product of the sealing resin composition according to any one of the above [1] to [5].

According to the present invention
The following components (A) and (B):
(A) One or more compounds selected from the group consisting of 3-amino-1,2,4-triazole and 4-amino-1,2,4-triazole,
(B) A sealing resin composition containing an epoxy resin .
A sealing resin composition containing no maleimide compound is provided.

Claims (6)

The following components (A) and (B):
(A) One or more compounds selected from the group consisting of 3-amino-1,2,4-triazole and 4-amino-1,2,4-triazole,
(B) A sealing resin composition containing an epoxy resin. The component (B) is selected from the group consisting of trisphenylmethane type epoxy resin, biphenyl aralkyl type polyfunctional epoxy resin, orthocresol type bifunctional epoxy resin, biphenyl type bifunctional epoxy resin and bisphenol type bifunctional epoxy resin. The sealing resin composition according to claim 1, which is one kind or two or more kinds. Component (C): The sealing resin composition according to claim 1 or 2, further comprising an inorganic filler. The sealing resin composition according to any one of claims 1 to 3, further comprising a component (D): a silane coupling agent. The sealing resin according to any one of claims 1 to 4, wherein the content of the component (A) is 0.01% by mass or more and 1% by mass or less with respect to the entire sealing resin composition. Composition. A semiconductor device in which a semiconductor element is sealed by a cured product of the sealing resin composition according to any one of claims 1 to 5.

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