JPWO2020190318A5 - - Google Patents

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JPWO2020190318A5
JPWO2020190318A5 JP2021556496A JP2021556496A JPWO2020190318A5 JP WO2020190318 A5 JPWO2020190318 A5 JP WO2020190318A5 JP 2021556496 A JP2021556496 A JP 2021556496A JP 2021556496 A JP2021556496 A JP 2021556496A JP WO2020190318 A5 JPWO2020190318 A5 JP WO2020190318A5
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misalignment
parameter
measurement
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wafer
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パラメタ安定位置ずれ計測改善方法であって、
その上に形成された複数個の多層半導体デバイスが備わるウェハであり、同一と意図されたウェハのバッチのなかから選択されたものを準備し、
位置ずれ計量ツールを用い、そのウェハの少なくとも第１層・第２層間の位置ずれを複数個の計測パラメタ集合を用い複数サイトにて計測することで、前記計測パラメタ集合それぞれに係る位置ずれ計測データを生成し、
前記ウェハに係り前記計測パラメタ集合それぞれに係る前記位置ずれ計測データからパラメタ依存部分及び平均誤差部分を特定して除去することで、そのウェハに係る改善パラメタ安定改善位置ずれデータを生成する、
パラメタ安定位置ずれ計測改善方法。 A method for improving parameter stability misalignment measurement, comprising:
providing a wafer having a plurality of multilayer semiconductor devices formed thereon, selected from a batch of wafers intended to be identical ;
Using a misalignment measuring tool, misalignment between at least the first layer and the second layer of the wafer is measured at a plurality of sites using a plurality of measurement parameter sets to obtain misalignment measurement data for each of the measurement parameter sets. to generate
generating improved parameter stability improved misalignment data related to the wafer by identifying and removing a parameter dependent portion and an average error portion from the misalignment measurement data related to each of the measurement parameter sets related to the wafer;
Method for improving parameter stability positional deviation measurement. 請求項１に係るパラメタ安定位置ずれ計測改善方法であって、前記計測パラメタ集合が、少なくとも、位置ずれ計測に用いられる複数通りの光波長を含むパラメタ安定位置ずれ計測改善方法。 2. The method for improving parameter-stable misalignment measurement according to claim 1, wherein said set of measurement parameters includes at least a plurality of light wavelengths used for misalignment measurement. 請求項１に係るパラメタ安定位置ずれ計測改善方法であって、前記パラメタ依存部分及び前記平均誤差部分を特定する際に、
前記計測パラメタ集合それぞれに係る前記位置ずれ計測データに関しパラメタ依存部分を特定し、
前記計測パラメタ集合それぞれに係る前記位置ずれデータの前記パラメタ依存部分の少なくとも１個の主成分を特定し、
前記パラメタ集合それぞれに係る前記位置ずれ計測データの前記パラメタ依存部分の前記少なくとも１個の主成分に関し加重係数を特定し、且つ
少なくとも一通りの平均誤差部分を、当該平均誤差部分それぞれが前記計測パラメタ集合それぞれに係る前記位置ずれ計測データの前記パラメタ依存部分の前記少なくとも１個の主成分それぞれに対応する態で特定するパラメタ安定位置ずれ計測改善方法。 2. The method for improving parameter stability misalignment measurement according to claim 1 , wherein identifying the parameter dependent portion and the average error portion includes:
identifying a parameter-dependent portion of the positional deviation measurement data associated with each of the measurement parameter sets;
identifying at least one principal component of the parameter-dependent portion of the misalignment data for each of the measurement parameter sets;
identifying weighting factors for the at least one principal component of the parameter-dependent portion of the misalignment measurement data for each of the parameter sets, and determining at least one mean error portion, each of the mean error portions corresponding to the measurement parameters; A parameter-stable dislocation metric improvement method for identifying each of the at least one principal component of the parameter-dependent portion of the dislocation metric data associated with each set in a manner corresponding to each of the at least one principal component. 請求項３に係るパラメタ安定位置ずれ計測改善方法であって、前記計測パラメタ集合それぞれに係る前記位置ずれデータの前記パラメタ依存部分の少なくとも１個の主成分が、主成分分析を用い特定されるパラメタ安定位置ずれ計測改善方法。4. The method for improving parameter-stable misalignment measurement according to claim 3, wherein at least one principal component of said parameter-dependent portion of said misregistration data for each of said set of measured parameters is a parameter identified using principal component analysis. Stable positional deviation measurement improvement method. 請求項１に係るパラメタ安定位置ずれ計測改善方法であって、更に、前記パラメタ依存部分及び前記平均誤差部分を用い、前記同一と意図されたウェハのバッチのなかから選択された少なくとも１枚の付加的ウェハに係り前記計測パラメタ集合それぞれに関する位置ずれ計測データから、パラメタ依存部分及び平均誤差部分を特定して除去することで、当該少なくとも１枚の付加的ウェハに係る改善パラメタ安定改善位置ずれデータを生成するパラメタ安定位置ずれ計測改善方法。 2. The improved method of parameter-stable misalignment metrology of claim 1 , further comprising using the parameter-dependent portion and the average error portion to add at least one wafer selected from the batch of identical intended wafers. improved parameter stability improved misalignment data related to the at least one additional wafer by identifying and removing the parameter dependent portion and the average error portion from the misalignment measurement data related to each of the measurement parameter sets related to the target wafer; Generating parameter stable misalignment measurement improvement method. 請求項１に係るパラメタ安定位置ずれ計測改善方法であって、前記位置ずれ計量ツールが撮像式位置ずれ計量ツール、またはスキャタロメトリ式位置ずれ計量ツールであるパラメタ安定位置ずれ計測改善方法。 2. The method for improving parameter-stable misalignment measurement according to claim 1 , wherein said misalignment metric tool is an imaging-based misalignment metric tool or a scatterometry-based misalignment metric tool . 請求項１に係るパラメタ安定位置ずれ計測改善方法であって、前記平均誤差部分が参照位置ずれ値を用い特定されるパラメタ安定位置ずれ計測改善方法。 2. The method of claim 1 , wherein the average error portion is identified using a reference misalignment value. 請求項７に係るパラメタ安定位置ずれ計測改善方法であって、前記参照位置ずれ値が、参照位置ずれ計量ツールを用い前記ウェハを計測することで生成されるパラメタ安定位置ずれ計測改善方法。 8. The method of claim 7 , wherein the reference misalignment value is generated by measuring the wafer using a reference misalignment metric tool. 請求項８に係るパラメタ安定位置ずれ計測改善方法であって、前記参照位置ずれツールが電子ビーム式位置ずれ計量ツールであるパラメタ安定位置ずれ計測改善方法。 9. The method of claim 8 , wherein the reference misalignment tool is an electron beam misalignment metric tool. 請求項１に係るパラメタ安定位置ずれ計測改善方法であって、前記計測パラメタ集合が、
位置ずれ計測における焦点可変性、
位置ずれ計測に用いられる数値開口、
位置ずれ計測に用いられる光の入射角、または
位置ずれ計測に用いられる光の偏向、
のうち少なくとも一つを含むパラメタ安定位置ずれ計測改善方法。 2. The method for improving parameter stability misalignment measurement according to claim 1 , wherein the set of measurement parameters includes:
focal variability in displacement measurement,
numerical aperture used for misalignment measurement,
the angle of incidence of the light used for misalignment measurement, or
deflection of light used for measuring misalignment;
A parameter stable misalignment measurement improvement method comprising at least one of: パラメタ安定位置ずれ計測改善システムであって、
その上に形成された複数個の多層半導体デバイスが備わるウェハであり企図上同一なウェハ群からなるバッチから選択されたウェハの少なくとも第１層・第２層間の位置ずれを、複数個の計測パラメタ集合を用い複数サイトにて計測することで、当該パラメタそれぞれに係る位置ずれ計測データを生成するよう動作する位置ずれ計量ツールと、
位置ずれデータアナライザであり、
前記ウェハに係り前記計測パラメタ集合それぞれに係る前記位置ずれ計測データからパラメタ依存部分及び平均誤差部分を特定して除去することで、そのウェハに係る改善パラメタ安定改善位置ずれデータを生成するよう、
動作する位置ずれデータアナライザと、
を備えるパラメタ安定位置ずれ計測改善システム。 A parameter stable positional deviation measurement improvement system,
A wafer having a plurality of multi-layered semiconductor devices formed thereon and selected from a batch of intentionally identical wafers. a misalignment metric tool operable to measure at multiple sites using the set to generate misalignment measurement data for each of the parameters;
is a misalignment data analyzer,
generating improved parameter stability improved misalignment data related to the wafer by identifying and removing a parameter dependent portion and an average error portion from the misalignment measurement data related to each of the measurement parameter sets related to the wafer;
a working misalignment data analyzer;
A parameter stable misalignment measurement improvement system comprising: 請求項１１に係るパラメタ安定位置ずれ計測改善システムであって、前記計測パラメタ集合が、少なくとも、位置ずれ計測に用いられる複数通りの光波長を含むパラメタ安定位置ずれ計測改善システム。 12. The parameter-stable misalignment metrology improvement system according to claim 11 , wherein said metrology parameter set includes at least a plurality of optical wavelengths used for misalignment metrology. 請求項１１に係るパラメタ安定位置ずれ計測改善システムであって、前記位置ずれデータアナライザが、更に、
前記計測パラメタ集合それぞれに係る前記位置ずれ計測データに関しパラメタ依存部分を特定し、
前記計測パラメタ集合それぞれに係る前記位置ずれデータの前記パラメタ依存部分の少なくとも１個の主成分を特定し、
前記パラメタ集合それぞれに係る前記位置ずれ計測データに係る前記パラメタ依存部分の少なくとも１個の主成分に関し加重係数を特定し、且つ
少なくとも一通りの平均誤差部分を、当該少なくとも一通りの平均誤差部分それぞれが前記計測パラメタ集合それぞれに係る前記位置ずれ計測データの前記パラメタ依存部分の前記少なくとも１個の主成分それぞれに対応する態で特定するよう、
動作するパラメタ安定位置ずれ計測改善システム。 12. The parameter stable misalignment metrology improvement system of claim 11 , wherein the misalignment data analyzer further comprises:
identifying a parameter-dependent portion of the positional deviation measurement data associated with each of the measurement parameter sets;
identifying at least one principal component of the parameter-dependent portion of the misalignment data for each of the measurement parameter sets;
identifying weighting factors for at least one principal component of the parameter-dependent portions of the misalignment measurement data associated with each of the parameter sets; is specified in a manner corresponding to each of the at least one principal component of the parameter-dependent portion of the positional deviation measurement data associated with each of the measurement parameter sets,
A working parameter stable misalignment measurement improvement system. 請求項１３に係るパラメタ安定位置ずれ計測改善システムであって、前記計測パラメタ集合それぞれに係る前記位置ずれデータの前記パラメタ依存部分の少なくとも１個の主成分が、主成分分析を用い特定されるパラメタ安定位置ずれ計測改善システム。14. The parameter-stable misalignment metrology improvement system of claim 13, wherein at least one principal component of said parameter-dependent portion of said misalignment data for each said set of metrology parameters is identified using principal component analysis. Stable misalignment measurement improvement system. 請求項１１に係るパラメタ安定位置ずれ計測改善システムであって、前記アナライザが、更に、前記パラメタ依存部分及び前記平均誤差部分を用い、前記企図上同一なウェハ群からなる前記バッチから選択された少なくとも１枚の付加的ウェハに係り前記計測パラメタ集合それぞれに関する前記位置ずれ計測データのなかから、パラメタ依存部分及び平均誤差部分を特定して除去することで、当該少なくとも１枚の付加的ウェハに係る改善パラメタ安定改善位置ずれデータを生成するよう、動作するパラメタ安定位置ずれ計測改善システム。 12. The parameter stable misalignment metrology improvement system of claim 11 , wherein the analyzer further uses the parameter dependent portion and the average error portion to select at least one of the batches of the intentionally identical wafers. identifying and removing a parameter -dependent portion and an average error portion from the misalignment measurement data for each of the measurement parameter sets for one additional wafer, An improved parameter stability misalignment metrology improvement system that operates to generate improved parameter stability improved misregistration data. 請求項１１に係るパラメタ安定位置ずれ計測改善システムであって、前記位置ずれ計量ツールが撮像式位置ずれ計量ツール、またはスキャタロメトリ式位置ずれ計量ツールであるパラメタ安定位置ずれ計測改善システム。 12. The parameter-stable disparity metric improvement system of claim 11 , wherein the disparity metric tool is an imaging disparity metric tool or a scatterometry disparity metric tool . 請求項１１に係るパラメタ安定位置ずれ計測改善システムであって、前記平均誤差部分が参照位置ずれ値を用い特定されるパラメタ安定位置ずれ計測改善システム。 12. The improved parametric stable disparity measurement improvement system of claim 11 , wherein the average error portion is identified using a reference misalignment value. 請求項１７に係るパラメタ安定位置ずれ計測改善システムであって、前記参照位置ずれ値が、参照位置ずれ計量ツールを用い前記ウェハを計測することで生成されるパラメタ安定位置ずれ計測改善システム。 18. The improved parameter-stable misalignment metrology system of claim 17 , wherein the reference misalignment value is generated by measuring the wafer using a reference misalignment metric tool. 請求項１８に係るパラメタ安定位置ずれ計測改善システムであって、前記参照位置ずれツールが電子ビーム式位置ずれ計量ツールであるパラメタ安定位置ずれ計測改善システム。 19. The improved parametric stable disparity measurement improvement system of claim 18 , wherein the reference disparity measurement tool is an electron beam disparity metric tool. 請求項１１に係るパラメタ安定位置ずれ計測改善システムであって、前記計測パラメタ集合が、
位置ずれ計測における焦点可変性、
位置ずれ計測に用いられる数値開口、
位置ずれ計測に用いられる光の入射角、または
位置ずれ計測に用いられる光の偏向、
のうち少なくとも一つを含むパラメタ安定位置ずれ計測改善システム。 12. The parameter stable misalignment metrology improvement system of claim 11 , wherein the metrology parameter set comprises:
focal variability in displacement measurement,
numerical aperture used for misalignment measurement,
the angle of incidence of the light used for misalignment measurement, or
deflection of light used for measuring misalignment;
A parameter stable misalignment measurement improvement system including at least one of:
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