JPWO2020184383A1 - - Google Patents

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Publication number
JPWO2020184383A1
JPWO2020184383A1 JP2021504994A JP2021504994A JPWO2020184383A1 JP WO2020184383 A1 JPWO2020184383 A1 JP WO2020184383A1 JP 2021504994 A JP2021504994 A JP 2021504994A JP 2021504994 A JP2021504994 A JP 2021504994A JP WO2020184383 A1 JPWO2020184383 A1 JP WO2020184383A1
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Japan
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JP2021504994A
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JP7294403B2 (ja
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    • H—ELECTRICITY
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/70—Bipolar devices
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    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
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  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208673A (ja) * 2001-01-10 2002-07-26 Mitsubishi Electric Corp 半導体装置およびパワーモジュール
JP2004193476A (ja) * 2002-12-13 2004-07-08 Denso Corp 半導体装置
JP2008042074A (ja) * 2006-08-09 2008-02-21 Nissan Motor Co Ltd 半導体装置及び電力変換装置
JP2013236035A (ja) * 2012-05-11 2013-11-21 Meidensha Corp 半導体モジュール及び半導体モジュールの製造方法
JP2014130894A (ja) * 2012-12-28 2014-07-10 Toyota Motor Corp 半導体モジュール

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US8129225B2 (en) * 2007-08-10 2012-03-06 Infineon Technologies Ag Method of manufacturing an integrated circuit module
DE112009005394T8 (de) * 2009-11-25 2012-12-20 Toyota Jidosha Kabushiki Kaisha Kühlstruktur einer Halbleitervorrichtung
JP6269296B2 (ja) * 2014-04-25 2018-01-31 株式会社デンソー 半導体モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002208673A (ja) * 2001-01-10 2002-07-26 Mitsubishi Electric Corp 半導体装置およびパワーモジュール
JP2004193476A (ja) * 2002-12-13 2004-07-08 Denso Corp 半導体装置
JP2008042074A (ja) * 2006-08-09 2008-02-21 Nissan Motor Co Ltd 半導体装置及び電力変換装置
JP2013236035A (ja) * 2012-05-11 2013-11-21 Meidensha Corp 半導体モジュール及び半導体モジュールの製造方法
JP2014130894A (ja) * 2012-12-28 2014-07-10 Toyota Motor Corp 半導体モジュール

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