JPWO2020168140A5 - - Google Patents

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JPWO2020168140A5
JPWO2020168140A5 JP2021574301A JP2021574301A JPWO2020168140A5 JP WO2020168140 A5 JPWO2020168140 A5 JP WO2020168140A5 JP 2021574301 A JP2021574301 A JP 2021574301A JP 2021574301 A JP2021574301 A JP 2021574301A JP WO2020168140 A5 JPWO2020168140 A5 JP WO2020168140A5
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半導体デバイスウェハの製造における位置ずれを測定する方法であって、
少なくとも１つの位置ずれ測定ターゲットを含んでいる少なくとも第１の層及び第２の層を含む多層半導体デバイスウェハであって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び、前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含んでいる、多層半導体デバイスウェハを供給することと、
前記第１の層と前記第２の層を、焦点深度の撮像装置を使用して、少なくとも１つの第１の波長を有する光を使用して撮像し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させることであり、前記第１の層と前記第２の層は、前記焦点深度を超える垂直距離によって相互に分離されており、
前記少なくとも１つの平面における前記第１の層と前記第２の層の前記画像間のオフセットを、オフセット量子化器を使用して定量化して、それによって前記第１の層と前記第２の層の位置ずれを計算することと、を含む、
方法。 A method for measuring misalignment in the manufacture of semiconductor device wafers, comprising:
A multi-layer semiconductor device wafer including at least first and second layers including at least one misalignment measurement target, the target being formed with the first layer and having a first pitch. providing a multilayer semiconductor device wafer including a first periodic structure and a second periodic structure formed with the second layer and having a second pitch;
imaging the first layer and the second layer using a depth of focus imaging device using light having at least one first wavelength; causing images of both layers to appear in at least one plane within said depth of focus, said first layer and said second layer being separated from each other by a vertical distance exceeding said depth of focus;
quantifying an offset between said images of said first layer and said second layer in said at least one plane using an offset quantizer, thereby quantifying said first layer and said second layer; calculating the misalignment of
Method. 前記撮像は、シングルグラブを含む請求項１に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 2. The method of measuring misregistration in the manufacture of semiconductor device wafers as recited in claim 1 , wherein said imaging comprises a single grab . 前記第１の層及び前記第２の層の前記撮像は、少なくとも２つの異なる波長を有する光を使用して実行され、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させる、請求項２に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 The imaging of the first layer and the second layer is performed using light having at least two different wavelengths to image both the first layer and the second layer to the depth of focus. 3. The method of measuring misregistration in the manufacture of semiconductor device wafers as recited in claim 2 , wherein the misregistration occurs in at least one plane within. 前記多層半導体デバイスウェハは少なくとも第３の層を含み、前記少なくとも１つの位置ずれ測定ターゲットは少なくとも第３の周期構造を前記少なくとも第３の層の上に含み、前記方法は、
前記第１の層及び前記第３の層を第２の焦点深度で、少なくとも１つの第２の波長を有する光を使用して撮像し、前記第１の層及び前記第３の層の両方の画像を、前記第２の焦点深度未満の垂直距離によって相互に分離された平面に出現させることを更に含む、
請求項１に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 The multilayer semiconductor device wafer includes at least a third layer, the at least one misalignment measurement target includes at least a third periodic structure on the at least third layer, the method comprising:
imaging the first layer and the third layer at a second depth of focus using light having at least one second wavelength; further comprising causing the images to appear in planes separated from each other by a vertical distance less than the second depth of focus;
A method for measuring misalignment in manufacturing a semiconductor device wafer according to claim 1 . 前記焦点深度は、開口数が０．３未満の場合、約５０ｎｍである、請求項１に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 2. The method of measuring misregistration in semiconductor device wafer fabrication of claim 1 , wherein the depth of focus is about 50 nm for numerical apertures less than 0.3. 半導体デバイスウェハの製造における位置ずれを測定する方法であって、
少なくとも１つの位置ずれ測定ターゲットを含んでいる少なくとも第１の層及び第２の層を含む多層半導体デバイスウェハであって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び、前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含み、前記少なくとも第１の層と第２の層は２μｍを超える垂直距離によって相互に分離している、多層半導体デバイスウェハを供給することと、
前記第１の層と前記第２の層を、焦点深度の撮像装置を使用して、少なくとも１つの第１の波長を有する光を使用して撮像し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させることであり、前記第１の層と前記第２の層は、前記焦点深度を超える垂直距離によって相互に分離されており、
前記少なくとも１つの平面における前記第１の層と前記第２の層の前記画像間のオフセットを、オフセット量子化器を使用して測定し、それによって前記第１の層と前記第２の層の位置ずれを計算することとを、含む、
方法。 A method for measuring misalignment in the manufacture of semiconductor device wafers, comprising:
A multi-layer semiconductor device wafer including at least first and second layers including at least one misalignment measurement target, the target being formed with the first layer and having a first pitch. a first periodic structure and a second periodic structure formed with said second layer and having a second pitch, wherein said at least first layer and second layer are separated by a vertical distance of greater than 2 μm. providing multi-layered semiconductor device wafers that are separate from one another;
imaging the first layer and the second layer using a depth of focus imaging device using light having at least one first wavelength; causing images of both layers to appear in at least one plane within said depth of focus, said first layer and said second layer being separated from each other by a vertical distance exceeding said depth of focus;
measuring an offset between the images of the first layer and the second layer in the at least one plane using an offset quantizer, thereby calculating the misalignment;
Method. 前記第１の層の前記撮像は第１の撮像装置によって実行され、前記第２の層の前記撮像は第２の撮像装置によって実行される、請求項６に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 7. The position in the manufacture of a semiconductor device wafer of claim 6 , wherein said imaging of said first layer is performed by a first imager and said imaging of said second layer is performed by a second imager. A method of measuring deviation. 前記第１の撮像装置及び前記第２の撮像装置は、異なる波長で動作する、請求項７に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。8. The method of measuring misregistration in semiconductor device wafer fabrication of claim 7, wherein the first imager and the second imager operate at different wavelengths. 前記第１の撮像装置及び前記第２の撮像装置は、同一の波長で動作する、請求項７に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 8. The method of measuring misregistration in the manufacture of semiconductor device wafers according to claim 7 , wherein said first imager and said second imager operate at the same wavelength. 前記第１の層の前記撮像と前記第２の層の前記撮像は、単一の撮像装置によって実行される、請求項６に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 7. The method of measuring misregistration in semiconductor device wafer fabrication of claim 6 , wherein said imaging of said first layer and said imaging of said second layer are performed by a single imaging device. 前記単一の撮像装置は、前記第１の層及び前記第２の層を前記単一の波長を有する光を用いて撮像する、請求項１０に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 11. Measuring misalignment in manufacturing a semiconductor device wafer according to claim 10 , wherein said single imaging device images said first layer and said second layer using light having said single wavelength. how to. 前記単一の撮像装置は、前記第１の層及び前記第２の層を少なくとも２つの波長を有する光を用いて撮像する、請求項１０に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 11. Measuring misregistration in semiconductor device wafer fabrication according to claim 10 , wherein said single imaging device images said first layer and said second layer using light having at least two wavelengths. Method. 前記単一の撮像装置は、前記第１の層及び前記第２の層をシングルグラブで撮像する、請求項１２に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 13. The method of measuring misregistration in the manufacture of semiconductor device wafers of claim 12 , wherein said single imaging device images said first layer and said second layer with a single grab. 半導体デバイスウェハの製造における位置ずれを測定するためのシステムであって、
少なくとも１つの位置ずれ測定ターゲットを含んでいる多層半導体デバイスウェハの少なくとも第１の層及び第２の層を撮像するように構成された撮像装置であって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含み、前記撮像装置が、焦点深度で、少なくとも１つの第１の波長を有する光を使用して動作し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させる、撮像装置であり、前記第１の層及び前記第２の層は、前記焦点深度よりも大きい垂直距離によって相互に分離される、撮像装置と、
前記少なくとも１つの平面において、前記第１の層と前記第２の層の前記画像間のオフセットを測定し、それによって位置ずれを計算するように構成される、オフセット量子化器と、
を含む、
半導体デバイスウェハの製造における位置ずれを測定するシステム。 A system for measuring misalignment in the manufacture of semiconductor device wafers, comprising:
An imaging apparatus configured to image at least first and second layers of a multi-layer semiconductor device wafer including at least one misregistration measurement target, the target together with the first layer. a first periodic structure formed having a first pitch and a second periodic structure formed together with the second layer and having a second pitch, wherein the imaging device, at a depth of focus, at least an imaging device that operates using light having a first wavelength to cause images of both the first layer and the second layer to appear in at least one plane within the depth of focus ; an imaging device, wherein the first layer and the second layer are separated from each other by a vertical distance greater than the depth of focus;
an offset quantizer configured to measure an offset between the images of the first layer and the second layer in the at least one plane, thereby calculating a misregistration;
including,
A system for measuring misalignment in the manufacture of semiconductor device wafers. 前記撮像はシングルグラブを含む、請求項１４に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。 15. The system for measuring misregistration in manufacturing semiconductor device wafers of claim 14 , wherein said imaging comprises a single grab. 前記撮像装置は、前記焦点深度で、少なくとも２つの異なる波長を有する光を使用して動作し、前記第１の層と前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させる、請求項１５に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。 The imaging device operates using light having at least two different wavelengths at the depth of focus to image both the first layer and the second layer in at least one plane within the depth of focus . 16. The system for measuring misregistration in manufacturing semiconductor device wafers according to claim 15 , which appears in . 前記多層半導体デバイスウェハは、少なくとも第３の層を含み、前記少なくとも１つの位置ずれ測定ターゲットは、前記少なくとも第３の層の上に少なくとも第３の周期構造を含み、ここで前記撮像装置はまた、前記第１の層及び前記第３の層を第２の焦点深度で撮像し、少なくとも１つの第２の波長を有する光を使用して動作し、前記第１の層と前記第３の層の両方の画像を、前記第２の焦点深度未満の垂直距離によって相互に分離される平面に出現させる、請求項１４に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。 The multilayer semiconductor device wafer includes at least a third layer, and the at least one misalignment measurement target includes at least a third periodic structure on the at least third layer, wherein the imaging device also , imaging the first layer and the third layer at a second depth of focus and operating using light having at least one second wavelength; appear in planes separated from each other by a vertical distance less than the second depth of focus. 前記焦点深度は、開口数が０．３未満の場合、約５０ｎｍである、請求項１４に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。 15. The system for measuring misregistration in semiconductor device wafer fabrication of claim 14 , wherein the depth of focus is about 50 nm for numerical apertures less than 0.3. 半導体デバイスウェハの製造における位置ずれを測定するためのシステムであって、半導体デバイスウェハは、少なくとも１つの位置ずれ測定ターゲットを含んでいる少なくとも第１の層及び第２の層を含む多層半導体デバイスウェハであって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び、前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含み、前記少なくとも第１の層と第２の層は２μｍを超える垂直距離で相互に分離している、多層半導体デバイスウェハを含み、システムは、
少なくとも１つの撮像装置であって、前記第１の層及び前記第２の層を少なくとも１つの焦点深度で、少なくとも１つの第１の波長を有する光を使用して撮像し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させるように構成された、撮像装置であり、前記第１の層及び前記第２の層は、前記焦点深度よりも大きい垂直距離によって相互に分離される、撮像装置と、
前記少なくとも１つの平面において、前記第１の層と前記第２の層の前記画像間のオフセットを測定し、それによって位置ずれを計算するように構成された、オフセット量子化器と、を含む。
システム。 A system for measuring misregistration in the manufacture of a semiconductor device wafer, the semiconductor device wafer being a multi-layer semiconductor device wafer including at least first and second layers including at least one misregistration measurement target. a target formed with the first layer and having a first pitch and a second periodic structure formed with the second layer and having a second pitch; a multi-layered semiconductor device wafer comprising a periodic structure, wherein said at least first and second layers are separated from each other by a vertical distance greater than 2 μm, the system comprising:
at least one imaging device for imaging the first layer and the second layer at at least one depth of focus using light having at least one first wavelength; and the second layer appear in at least one plane within the depth of focus, wherein the first layer and the second layer are the depth of focus an imaging device separated from each other by a vertical distance greater than
an offset quantizer configured to measure an offset between the images of the first layer and the second layer in the at least one plane, thereby calculating a misregistration.
system. 前記少なくとも１つの撮像装置は、前記第１の層を前記少なくとも１つの第１の波長を有する光を使用して撮像する第１の撮像装置と、前記第２の層を少なくとも１つの第２の波長を有する光を使用して撮像する第２の撮像装置を含み、前記第１の層と前記第２の層の両方の画像を、前記焦点深度内の前記少なくとも１つの平面に出現させる、請求項１９に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。 The at least one imaging device comprises: a first imaging device that images the first layer using light having the at least one first wavelength; comprising a second imager for imaging using light having a wavelength to cause images of both the first layer and the second layer to appear in the at least one plane within the depth of focus. Item 20. A system for measuring positional deviation in manufacturing a semiconductor device wafer according to Item 19 . 前記第１の撮像装置及び前記第２の撮像装置は、異なる波長で動作する、請求項２０に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。 21. The system for measuring misregistration in manufacturing semiconductor device wafers of claim 20 , wherein said first imager and said second imager operate at different wavelengths. 前記第１の撮像装置及び前記第２の撮像装置は、同一の波長で動作する、請求項２０に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。 21. The system for measuring misregistration in the manufacture of semiconductor device wafers according to claim 20 , wherein said first imager and said second imager operate at the same wavelength. 半導体デバイスウェハの製造における位置ずれを測定する方法であって、A method for measuring misalignment in the manufacture of semiconductor device wafers, comprising:
少なくとも１つの位置ずれ測定ターゲットを含んでいる少なくとも第１の層及び第２の層を含む多層半導体デバイスウェハであって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び、前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含んでいる、多層半導体デバイスウェハを供給することと、 A multi-layer semiconductor device wafer including at least first and second layers including at least one misalignment measurement target, the target being formed with the first layer and having a first pitch. providing a multilayer semiconductor device wafer including a first periodic structure and a second periodic structure formed with the second layer and having a second pitch;
前記第１の層と前記第２の層を、焦点深度の撮像装置を使用して、少なくとも１つの第１の波長を有する光を使用して撮像し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させることであり、前記第１の層と前記第２の層は、前記焦点深度を超える垂直距離によって相互に分離され、前記光は赤外線放射であり、 imaging the first layer and the second layer using a depth of focus imaging device using light having at least one first wavelength; causing images of both layers to appear in at least one plane within said depth of focus, said first layer and said second layer being separated from each other by a vertical distance exceeding said depth of focus; is the infrared radiation and
前記少なくとも１つの平面における前記第１の層と前記第２の層の前記画像間のオフセットを、オフセット量子化器を使用して定量化して、それによって前記第１の層と前記第２の層の位置ずれを計算することと、を含む、 quantifying an offset between said images of said first layer and said second layer in said at least one plane using an offset quantizer, thereby quantifying said first layer and said second layer; calculating the misalignment of
方法。Method. 前記撮像はシングルグラブを含む、請求項２３に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。24. The method of measuring misregistration in semiconductor device wafer fabrication of claim 23, wherein said imaging comprises a single grab. 前記第１の層及び前記第２の層の前記撮像は、少なくとも２つの異なる波長を有する光を使用して実行され、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させる、請求項２４に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。The imaging of the first layer and the second layer is performed using light having at least two different wavelengths to image both the first layer and the second layer to the depth of focus. 25. The method of measuring misregistration in the manufacture of semiconductor device wafers according to claim 24, wherein the method appears in at least one plane within. 前記多層半導体デバイスウェハは少なくとも第３の層を含み、前記少なくとも１つの位置ずれ測定ターゲットは少なくとも第３の周期構造を前記少なくとも第３の層の上に含み、前記方法は、The multilayer semiconductor device wafer includes at least a third layer, the at least one misalignment measurement target includes at least a third periodic structure on the at least third layer, the method comprising:
前記第１の層及び前記第３の層を焦点深度で、少なくとも１つの第２の波長を有する光を使用して撮像し、前記第１の層及び前記第３の層の両方の画像を、前記焦点深度未満の垂直距離によって相互に分離された平面に出現させることを更に含む、 imaging the first layer and the third layer at a depth of focus using light having at least one second wavelength, and imaging both the first layer and the third layer; appearing in planes separated from each other by a vertical distance less than the depth of focus;
請求項２３に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。 24. A method of measuring misregistration in manufacturing a semiconductor device wafer according to claim 23. 前記焦点深度は、開口数が０．３未満の場合、約５０ｎｍである、請求項２３に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。24. The method of measuring misregistration in semiconductor device wafer fabrication of claim 23, wherein the depth of focus is about 50 nm for numerical apertures less than 0.3. 前記垂直距離は３０μｍより大きい、請求項２３に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。24. The method of measuring misregistration in the manufacture of semiconductor device wafers according to claim 23, wherein said vertical distance is greater than 30 [mu]m. 半導体デバイスウェハの製造における位置ずれを測定する方法であって、A method for measuring misalignment in the manufacture of semiconductor device wafers, comprising:
少なくとも１つの位置ずれ測定ターゲットを含んでいる少なくとも第１の層及び第２の層を含む多層半導体デバイスウェハであって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び、前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含み、前記少なくとも第１の層と第２の層は２μｍを超える垂直距離によって相互に分離している、多層半導体デバイスウェハを供給することと、 A multi-layer semiconductor device wafer including at least first and second layers including at least one misalignment measurement target, the target being formed with the first layer and having a first pitch. a first periodic structure and a second periodic structure formed with said second layer and having a second pitch, wherein said at least first layer and second layer are separated by a vertical distance of greater than 2 μm. providing multi-layered semiconductor device wafers that are separate from one another;
前記第１の層と前記第２の層を、焦点深度の撮像装置を使用して、少なくとも１つの第１の波長を有する光を使用して撮像し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させることであり、前記第１の層と前記第２の層は、前記焦点深度を超える垂直距離によって相互に分離され、前記光は赤外線放射であり、 前記少なくとも１つの平面における前記第１の層と前記第２の層の前記画像間のオフセットを、オフセット量子化器を使用して測定し、それによって前記第１の層と前記第２の層の位置ずれを計算することとを、含む、 imaging the first layer and the second layer using a depth of focus imaging device using light having at least one first wavelength; causing images of both layers to appear in at least one plane within said depth of focus, said first layer and said second layer being separated from each other by a vertical distance exceeding said depth of focus; is infrared radiation, and an offset between said images of said first layer and said second layer in said at least one plane is measured using an offset quantizer, whereby said first layer and calculating the misalignment of the second layer;
方法。Method. 前記第１の層の前記撮像は第１の撮像装置によって実行され、前記第２の層の前記撮像は第２の撮像装置によって実行される、請求項２９に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。30. The position in the manufacture of a semiconductor device wafer of claim 29, wherein said imaging of said first layer is performed by a first imager and said imaging of said second layer is performed by a second imager. A method of measuring deviation. 前記第１の撮像装置及び前記第２の撮像装置は、異なる波長で動作する、請求項３０に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。31. The method of measuring misregistration in semiconductor device wafer fabrication of claim 30, wherein said first imager and said second imager operate at different wavelengths. 前記第１の撮像装置及び前記第２の撮像装置は、同一の波長で動作する、請求項３０に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。31. The method of measuring misregistration in semiconductor device wafer fabrication of claim 30, wherein said first imager and said second imager operate at the same wavelength. 前記第１の層の前記撮像と前記第２の層の前記撮像は、単一の撮像装置によって実行される、請求項２９に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。30. The method of measuring misregistration in manufacturing a semiconductor device wafer of claim 29, wherein said imaging of said first layer and said imaging of said second layer are performed by a single imaging device. 前記単一の撮像装置は、前記第１の層及び前記第２の層を前記単一の波長を有する光を用いて撮像する、請求項３３に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。34. Measuring misregistration in manufacturing a semiconductor device wafer according to claim 33, wherein said single imaging device images said first layer and said second layer using light having said single wavelength. how to. 前記単一の撮像装置は、前記第１の層及び前記第２の層を少なくとも２つの波長を有する光を用いて撮像する、請求項３３に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。34. Measuring misregistration in the manufacture of semiconductor device wafers according to claim 33, wherein said single imager images said first layer and said second layer with light having at least two wavelengths. Method. 前記単一の撮像装置は、前記第１の層及び前記第２の層をシングルグラブで撮像する、請求項３５に記載の半導体デバイスウェハの製造における位置ずれを測定する方法。36. The method of measuring misregistration in manufacturing a semiconductor device wafer of claim 35, wherein said single imaging device images said first layer and said second layer with a single grab. 半導体デバイスウェハの製造における位置ずれを測定するためのシステムであって、A system for measuring misalignment in the manufacture of semiconductor device wafers, comprising:
少なくとも１つの位置ずれ測定ターゲットを含んでいる多層半導体デバイスウェハの少なくとも第１の層及び第２の層を撮像するように構成された撮像装置であって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含み、前記撮像装置が、焦点深度で、少なくとも１つの第１の波長を有する光を使用して動作し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させ、前記第１の層と前記第２の層は、前記焦点深度を超える垂直距離によって相互に分離され、前記光は赤外線放射である、撮像装置と、 An imaging apparatus configured to image at least first and second layers of a multi-layer semiconductor device wafer including at least one misregistration measurement target, the target together with the first layer. a first periodic structure formed having a first pitch and a second periodic structure formed together with the second layer and having a second pitch, wherein the imaging device, at a depth of focus, at least operating with light having a first wavelength to cause images of both the first layer and the second layer to appear in at least one plane within the depth of focus; and said second layer are separated from each other by a vertical distance exceeding said depth of focus, and said light is infrared radiation;
前記少なくとも１つの平面において、前記第１の層と前記第２の層の前記画像間のオフセットを測定し、それによって位置ずれを計算するように構成される、オフセット量子化器と、を含む、 an offset quantizer configured to measure an offset between the images of the first layer and the second layer in the at least one plane, thereby calculating a misregistration;
半導体デバイスウェハの製造における位置ずれを測定するシステム。A system for measuring misalignment in the manufacture of semiconductor device wafers. 前記撮像はシングルグラブを含む、請求項３７に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。38. The system for measuring misregistration in manufacturing semiconductor device wafers of claim 37, wherein said imaging comprises a single grab. 前記撮像装置は、前記焦点深度で、少なくとも２つの異なる波長を有する光を使用して動作し、前記第１の層と前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させる、請求項３７に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。The imaging device operates using light having at least two different wavelengths at the depth of focus to image both the first layer and the second layer in at least one plane within the depth of focus. 38. The system for measuring misregistration in manufacturing semiconductor device wafers of claim 37 appearing in . 前記多層半導体デバイスウェハは、少なくとも第３の層を含み、前記少なくとも１つの位置ずれ測定ターゲットは、前記少なくとも第３の層の上に少なくとも第３の周期構造を含み、ここで前記撮像装置はまた、前記第１の層及び前記第３の層を第２の焦点深度で撮像し、少なくとも１つの第２の波長を有する光を使用して動作し、前記第１の層と前記第３の層の両方の画像を、前記第２の焦点深度未満の垂直距離によって相互に分離される平面に出現させる、請求項３７に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。The multilayer semiconductor device wafer includes at least a third layer, and the at least one misalignment measurement target includes at least a third periodic structure on the at least third layer, wherein the imaging device also , imaging the first layer and the third layer at a second depth of focus and operating using light having at least one second wavelength; appear in planes separated from each other by a vertical distance less than said second depth of focus. 前記焦点深度は、開口数が０．３未満の場合、約５０ｎｍである、請求項３７に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。38. The system for measuring misregistration in semiconductor device wafer fabrication of claim 37, wherein the depth of focus is about 50 nm for numerical apertures less than 0.3. 前記垂直距離は３０μｍより大きい、請求項３７に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。38. The system for measuring misregistration in the manufacture of semiconductor device wafers according to claim 37, wherein said vertical distance is greater than 30 [mu]m. 半導体デバイスウェハの製造における位置ずれを測定するためのシステムであって、半導体デバイスウェハは、少なくとも１つの位置ずれ測定ターゲットを含んでいる少なくとも第１の層及び第２の層を含む多層半導体デバイスウェハであって、ターゲットが前記第１の層と一緒に形成されて第１のピッチを有する第１の周期構造及び、前記第２の層と一緒に形成されて第２のピッチを有する第２の周期構造を含み、前記少なくとも第１の層と第２の層は２μｍを超える垂直距離で相互に分離している、多層半導体デバイスウェハを含み、システムは、A system for measuring misregistration in the manufacture of a semiconductor device wafer, the semiconductor device wafer being a multi-layer semiconductor device wafer including at least first and second layers including at least one misregistration measurement target. a target formed with the first layer and having a first pitch and a second periodic structure formed with the second layer and having a second pitch; a multi-layered semiconductor device wafer comprising a periodic structure, wherein said at least first and second layers are separated from each other by a vertical distance greater than 2 μm, the system comprising:
少なくとも１つの撮像装置であって、前記第１の層及び前記第２の層を少なくとも１つの焦点深度で、少なくとも１つの第１の波長を有する光を使用して撮像し、前記第１の層及び前記第２の層の両方の画像を前記焦点深度内の少なくとも１つの平面に出現させるように構成され、前記第１の層と前記第２の層は、前記焦点深度を超える垂直距離によって相互に分離され、前記光は赤外線放射である、撮像装置と、 at least one imaging device for imaging the first layer and the second layer at at least one depth of focus using light having at least one first wavelength; and said second layer to appear in at least one plane within said depth of focus, said first layer and said second layer being mutually separated by a vertical distance exceeding said depth of focus. an imager, wherein the light is infrared radiation;
前記少なくとも１つの平面において、前記第１の層と前記第２の層の前記画像間のオフセットを測定し、それによって位置ずれを計算するように構成された、オフセット量子化器と、を含む。 an offset quantizer configured to measure an offset between the images of the first layer and the second layer in the at least one plane, thereby calculating a misregistration.
システム。system. 前記少なくとも１つの撮像装置は、前記第１の層を前記少なくとも１つの第１の波長を有する光を使用して撮像する第１の撮像装置と、前記第２の層を少なくとも１つの第２の波長を有する光を使用して撮像する第２の撮像装置を含み、前記第１の層と前記第２の層の両方の画像を、前記焦点深度内の前記少なくとも１つの平面に出現させる、請求項４３に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。The at least one imaging device comprises: a first imaging device that images the first layer using light having the at least one first wavelength; comprising a second imager for imaging using light having a wavelength to cause images of both the first layer and the second layer to appear in the at least one plane within the depth of focus. Item 44. A system for measuring misalignment in manufacturing semiconductor device wafers according to Item 43. 前記第１の撮像装置及び前記第２の撮像装置は、異なる波長で動作する、請求項４４に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。45. The system for measuring misregistration in the manufacture of semiconductor device wafers of claim 44, wherein said first imager and said second imager operate at different wavelengths. 前記第１の撮像装置及び前記第２の撮像装置は、同一の波長で動作する、請求項４４に記載の半導体デバイスウェハの製造における位置ずれを測定するシステム。45. The system for measuring misregistration in manufacturing semiconductor device wafers of claim 44, wherein said first imager and said second imager operate at the same wavelength.
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