JPWO2020166725A1 - - Google Patents
Info
- Publication number
- JPWO2020166725A1 JPWO2020166725A1 JP2020572357A JP2020572357A JPWO2020166725A1 JP WO2020166725 A1 JPWO2020166725 A1 JP WO2020166725A1 JP 2020572357 A JP2020572357 A JP 2020572357A JP 2020572357 A JP2020572357 A JP 2020572357A JP WO2020166725 A1 JPWO2020166725 A1 JP WO2020166725A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
- G06F15/16—Combinations of two or more digital computers each having at least an arithmetic unit, a program unit and a register, e.g. for a simultaneous processing of several programs
- G06F15/163—Interprocessor communication
- G06F15/167—Interprocessor communication using a common memory, e.g. mailbox
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F15/00—Digital computers in general; Data processing equipment in general
- G06F15/76—Architectures of general purpose stored program computers
- G06F15/78—Architectures of general purpose stored program computers comprising a single central processing unit
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
- G06F17/10—Complex mathematical operations
- G06F17/14—Fourier, Walsh or analogous domain transformations, e.g. Laplace, Hilbert, Karhunen-Loeve, transforms
- G06F17/141—Discrete Fourier transforms
- G06F17/142—Fast Fourier transforms, e.g. using a Cooley-Tukey type algorithm
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1697—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
- H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/3562—Bistable circuits of the master-slave type
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019026134 | 2019-02-16 | ||
PCT/JP2020/005928 WO2020166725A1 (ja) | 2019-02-16 | 2020-02-15 | デバイス、センサノード、アクセスコントローラ、データ転送方法及びマイクロコントローラにおける処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2020166725A1 true JPWO2020166725A1 (ja) | 2020-08-20 |
JPWO2020166725A5 JPWO2020166725A5 (ja) | 2023-02-08 |
Family
ID=72044111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020572357A Pending JPWO2020166725A1 (ja) | 2019-02-16 | 2020-02-15 |
Country Status (4)
Country | Link |
---|---|
US (2) | US11862217B2 (ja) |
JP (1) | JPWO2020166725A1 (ja) |
KR (1) | KR20220002265A (ja) |
WO (1) | WO2020166725A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20230403011A1 (en) * | 2022-06-09 | 2023-12-14 | Everspin Technologies, Inc. | Mram device with integrated controller for fpga system and methods therefor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3954185B2 (ja) * | 1998-01-14 | 2007-08-08 | 株式会社沖データ | メモリシステム |
US20180107591A1 (en) * | 2011-04-06 | 2018-04-19 | P4tents1, LLC | System, method and computer program product for fetching data between an execution of a plurality of threads |
JP6130758B2 (ja) | 2013-09-06 | 2017-05-17 | 株式会社東芝 | メモリ制御回路およびキャッシュメモリ |
US10396778B1 (en) * | 2017-05-31 | 2019-08-27 | Apple Inc. | Method for power gating for wide dynamic voltage range operation |
KR20190093400A (ko) * | 2018-02-01 | 2019-08-09 | 삼성전자주식회사 | 반도체 메모리 장치 및 반도체 메모리 장치를 포함하는 전자 장치 |
US11146564B1 (en) * | 2018-07-24 | 2021-10-12 | Pure Storage, Inc. | Login authentication in a cloud storage platform |
US11048800B2 (en) * | 2018-12-17 | 2021-06-29 | Intel Corporation | Composable trustworthy execution environments |
-
2020
- 2020-02-15 WO PCT/JP2020/005928 patent/WO2020166725A1/ja active Application Filing
- 2020-02-15 US US17/430,000 patent/US11862217B2/en active Active
- 2020-02-15 KR KR1020217029864A patent/KR20220002265A/ko active Search and Examination
- 2020-02-15 JP JP2020572357A patent/JPWO2020166725A1/ja active Pending
-
2023
- 2023-10-25 US US18/494,278 patent/US20240071452A1/en active Pending
Also Published As
Publication number | Publication date |
---|---|
US11862217B2 (en) | 2024-01-02 |
US20220157361A1 (en) | 2022-05-19 |
US20240071452A1 (en) | 2024-02-29 |
WO2020166725A1 (ja) | 2020-08-20 |
KR20220002265A (ko) | 2022-01-06 |
Similar Documents
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