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図１～図４及び図９に示されるように、少なくとも１つの熱調整デバイスがプラズマ源本体12に固定あるいは連結されていてもよい。一実施形態においては、少なくとも１つの熱調整デバイスは、プラズマ源本体12及びその様々な構成要素の少なくとも一部の温度を能動的に調整するように構成されていてもよい。図示された実施形態においては、第１の熱調整デバイス100及び少なくとも第２の熱調整デバイス104がプラズマ源本体12に着脱可能に連結されている。必要に応じて、任意の数の熱調整デバイスをプラズマ源10内で用いてもよい。図１及び図９に示されるように、熱調整デバイス100，104のうち少なくとも１つは、少なくとも１つの調整デバイス本体130を含み得る。図示された実施形態において、調整デバイス本体130には、１以上のアパーチャ、ポート、又は開口が形成されていてもよい。より具体的には、図示された実施形態においては、第１の熱調整デバイス100及び第２の熱調整デバイス104の調整デバイス本体130には、少なくとも１つの流入口106と少なくとも１つの流出口108とが形成されている。当業者であれば、任意の数の流入口及び／又は流出口を調整デバイス本体130に形成してもよいことを理解するであろう。一実施形態においては、流入口106及び流出口108は、使用中に１以上の流体又は材料を調整デバイス本体130に導入することができ、さらに／あるいは調整デバイス本体130から取り出すことができるように構成されている。例えば、図９は、第２の熱調整デバイス104の実施形態の上方斜視図を示しており、流入口106及び流出口108は、第２の熱調整デバイス104を構成する調整デバイス本体130と流体的に連絡している。このため、１以上の流体又は材料が、流入口106及び／又は流出口108のうち少なくとも１つを介して、調整デバイス本体130内に導入し、調整デバイス本体130から排出され得る。図９に示される実施形態においては、調整デバイス本体130には、少なくとも１つのアパーチャ又は流路132が形成されている。必要に応じて、当業者であれば、調整デバイス本体130がアパーチャ又は流路132を含んでいなくてもよいことを理解するであろう。一実施形態においては、第１の熱調整デバイス100及び第２の熱調整デバイス104のうち少なくとも１つは、高い熱伝導率を有する少なくとも１つの材料から製造され得る。例えば、第１の熱調整デバイス100及び第２の熱調整デバイス104のうち少なくとも１つは、銅、アルミニウム、様々な合金などから製造され得る。さらに、第１の熱調整デバイス100及び第２の熱調整デバイス104のうち少なくとも一方は、調整デバイス本体130上に形成された１以上のフィーチャであって、熱調整デバイス100，104の表面積を高める又は増加させることにより熱的性能を高めるように構成された１以上のフィーチャを含み得る。他の実施形態においては、熱調整デバイス100，104は、プラズマ源本体12の少なくとも一部に隣接して配置され、プラズマ源本体12の少なくとも一部に熱接触するコールドプレート、チラー、流体式冷却装置又はこれに類似する装置を含んでいる。 As shown in FIGS. 1 to 4 and 9, at least one heat conditioning device may be fixed or connected to the plasma source body 12. In one embodiment, the at least one thermal conditioning device may be configured to actively regulate the temperature of at least a portion of the plasma source body 12 and its various components. In the illustrated embodiment, the first heat conditioning device 100 and at least the second heat conditioning device 104 are detachably connected to the plasma source body 12. If desired, any number of thermal conditioning devices may be used within the plasma source 10. As shown in FIGS. 1 and 9, at least one of the thermal conditioning devices 100, 104 may include at least one conditioning device body 130. In the illustrated embodiment, the adjustment device body 130 may be formed with one or more apertures, ports, or openings. More specifically, in the illustrated embodiment, the conditioning device body 130 of the first heat conditioning device 100 and the second heat conditioning device 104 has at least one inlet 106 and at least one outlet 108. And are formed. Those skilled in the art will appreciate that any number of inlets and / or outlets may be formed in the conditioning device body 130. In one embodiment, the inlet 106 and outlet 108 allow one or more fluids or materials to be introduced into and / or removed from the conditioning device body 130 during use. It is configured. For example, FIG. 9 shows an upward perspective view of an embodiment of the second heat conditioning device 104, in which the inlet 106 and the outlet 108 are the regulating device body 130 and the fluid constituting the second heat regulating device 104. I am in contact with you. Thus, one or more fluids or materials may be introduced into and discharged from the conditioning device body 130 via at least one of the inlet 106 and / or the outlet 108. In the embodiment shown in FIG. 9, the adjusting device body 130 is formed with at least one aperture or flow path 132. If necessary, one of ordinary skill in the art will appreciate that the conditioning device body 130 does not have to include the aperture or flow path 132. In one embodiment, at least one of the first heat conditioning device 100 and the second heat conditioning device 104 can be manufactured from at least one material having a high thermal conductivity. For example, at least one of the first heat conditioning device 100 and the second heat conditioning device 104 may be made of copper, aluminum, various alloys and the like. Further, at least one of the first thermal conditioning device 100 and the second thermal conditioning device 104 is one or more features formed on the conditioning device body 130 to increase the surface area of the thermal conditioning devices 100, 104. Alternatively, it may include one or more features configured to enhance thermal performance by increasing. In another embodiment, the thermal conditioning devices 100, 104 are placed adjacent to at least a portion of the plasma source body 12 and are in thermal contact with at least a portion of the plasma source body 12, such as a cold plate, chiller, or fluid cooling. Includes equipment or similar equipment.
図１及び図２を再び参照すると、プラズマ源10は、プラズマ源本体12上の様々な位置に配置された１以上の熱センサ62，66，70（図６～図８参照）を含み得る。これらの様々な熱センサは、１以上のセンサ導線（図10の導線64，68，72参照）を介して１以上のプロセッサ又はコントローラ（図10の処理制御システム170参照）と通信可能となっている。図示された実施形態においては、第１のセンサ導線64、第２のセンサ導線68、及び第３のセンサ導線72が、プラズマ源本体12に連結されているものとして示されている。当業者であれば、プラズマ源10が、第１のセンサ62と少なくとも第２のセンサ66とを含んでいてもよいことを理解するであろう。以下の段落では、第１のセンサ62、第２のセンサ66、及び任意的な追加のセンサ70をより詳細に説明する。
Referring again to FIGS. 1 and 2, the plasma source 10 may include one or more heat sensors 62, 66, 70 (see FIGS. 6-8) located at various locations on the plasma source body 12. These various thermal sensors can communicate with one or more processors or controllers (see processing control system 170 in FIG. 10) via one or more sensor leads (see leads 64, 68, 72 in FIG. 10). There is. In the illustrated embodiment, the first sensor conductor 64, the second sensor conductor 68, and the third sensor conductor 72 are shown as being connected to the plasma source body 12. Those skilled in the art will appreciate that the plasma source 10 may include a first sensor 62 and at least a second sensor 66. The following paragraphs describe in more detail the first sensor 62, the second sensor 66, and any additional sensor 70.
Claims (21)
少なくとも１つのガスを供給するように構成される少なくとも１つのガス源と、
前記少なくとも１つのガス源及び少なくとも１つのガス流出口と流体的に連絡している少なくとも１つのガス流入口を規定するプラズマ源本体であって、前記プラズマ源は、前記プラズマ源本体内に形成される少なくとも１つの流路面を有する少なくとも１つの流路を有し、前記少なくとも１つの流路は、前記少なくとも１つのガス流入口及び前記少なくとも１つのガス流出口と流体的に連絡しており、その内部に少なくとも１つのプラズマ領域が形成されるように構成される、プラズマ源本体と、
前記少なくとも１つの流路の前記少なくとも１つの流路面の近傍の前記プラズマ源本体内に形成される第１の熱センサレシーバと、
前記第１の熱センサレシーバ内に位置する第１の熱センサであって、第１の位置で前記少なくとも１つの流路の少なくとも１つの流路面の第１の温度を測定するように構成される第１の熱センサと、
前記少なくとも１つの流路の前記少なくとも１つの流路面の近傍の前記プラズマ源本体内に形成される第２の熱センサレシーバであって、前記少なくとも１つのガス流出口の近傍の前記プラズマ源本体内に形成される第２の熱センサレシーバと、
前記第２の熱センサレシーバ内に位置する第２の熱センサであって、第２の位置で前記少なくとも１つの流路の前記少なくとも１つの流路面の第２の温度を測定するように構成される第２の熱センサと
を備える、プラズマ源。 A plasma source for processing systems
With at least one gas source configured to supply at least one gas,
A plasma source body that defines at least one gas inlet and at least one gas inlet that is in fluid contact with the at least one gas source and the at least one gas outlet, wherein the plasma source is formed within the plasma source body. It has at least one flow path having at least one flow path surface, and the at least one flow path is in fluid communication with the at least one gas inlet and the at least one gas outlet thereof. A plasma source body configured to form at least one plasma region inside,
A first thermal sensor receiver formed in the plasma source body in the vicinity of the at least one flow path surface of the at least one flow path.
A first heat sensor located within the first heat sensor receiver, configured to measure the first temperature of at least one flow path surface of the at least one flow path at the first position. The first heat sensor and
A second heat sensor receiver formed in the plasma source body in the vicinity of the at least one flow path surface of the at least one flow path, and in the plasma source body in the vicinity of the at least one gas outlet. The second heat sensor receiver formed in
A second heat sensor located within the second heat sensor receiver, configured to measure the second temperature of the at least one flow path surface of the at least one flow path at the second position. A plasma source with a second thermal sensor.
前記少なくとも１つの任意的な熱センサレシーバ内に位置する少なくとも１つの任意的な熱センサであって、前記プラズマ源本体内の位置で前記少なくとも１つの流路の前記少なくとも１つの流路面の温度を測定するように構成される少なくとも１つの任意的な熱センサと、
をさらに備える、請求項１に記載のプラズマ源。 The plasma in the vicinity of the at least one gas outlet of at least one optional thermal sensor receiver formed in the plasma source body in the vicinity of the at least one flow path surface of the at least one flow path. With at least one optional thermal sensor receiver formed within the source body,
At least one optional thermal sensor located within the at least one optional thermal sensor receiver, the temperature of the at least one channel surface of the at least one channel at a position within the plasma source body. With at least one optional thermal sensor configured to measure,
The plasma source according to claim 1, further comprising.
少なくとも１つのガスを供給するように構成される少なくとも１つのガス源と、
前記少なくとも１つのガス源及び少なくとも１つのガス流出口と流体的に連絡している少なくとも１つのガス流入口を規定するプラズマ源本体であって、前記プラズマ源は、前記プラズマ源本体内に形成された少なくとも１つの流路面を有する少なくとも１つの流路を有し、前記少なくとも１つの流路は、前記少なくとも１つのガス流入口及び前記少なくとも１つのガス流出口と流体的に連絡している、プラズマ源本体と、
前記プラズマ源本体の少なくとも一部を取り囲み、少なくとも１つの電源に連絡しており、前記プラズマ源本体内に少なくとも１つのプラズマ領域を生成するように構成される少なくとも１つの電力源であって、前記少なくとも１つのプラズマ領域は、前記流路内を流れる前記少なくとも１つのガスを解離して少なくとも１つの解離ガスを形成するように構成され、前記少なくとも１つの電力源と、前記少なくとも１つの解離ガスは、前記少なくとも１つの流出口を介してプラズマ源本体から排出される、少なくとも１つの電力源と、
前記少なくとも１つの流路の前記少なくとも１つの流路面の近傍の前記プラズマ源本体内に形成される第１の熱センサレシーバと、
前記第１の熱センサレシーバ内に位置する第１の熱センサであって、第１の位置で前記少なくとも１つの流路の少なくとも１つの流路面の第１の温度を測定するように構成される第１の熱センサと、
前記少なくとも１つの流路の前記少なくとも１つの流路面の近傍の前記プラズマ源本体内に形成される第２の熱センサレシーバであって、前記少なくとも１つのガス流出口の近傍の前記プラズマ源本体内に形成される第２の熱センサレシーバと、
前記第２の熱センサレシーバ内に位置する第２の熱センサであって、第２の位置で前記少なくとも１つの流路の前記少なくとも１つの流路面の第２の温度を測定するように構成される第２の熱センサと、
前記プラズマ源本体に連結される少なくとも１つの熱調整デバイスと
を備える、プラズマ源。 A plasma source for processing systems
With at least one gas source configured to supply at least one gas,
A plasma source body that defines at least one gas inlet and at least one gas inlet that is in fluid contact with the at least one gas source and the at least one gas outlet, wherein the plasma source is formed within the plasma source body. A plasma having at least one flow path having at least one flow path surface, wherein the at least one flow path is in fluid contact with the at least one gas inlet and the at least one gas outlet. With the source body,
The at least one power source that surrounds at least a portion of the plasma source body, communicates with at least one power source, and is configured to generate at least one plasma region within the plasma source body. The at least one plasma region is configured to dissociate the at least one gas flowing in the flow path to form at least one dissociated gas, the at least one power source and the at least one dissociated gas. With at least one power source ejected from the plasma source body through the at least one outlet.
A first thermal sensor receiver formed in the plasma source body in the vicinity of the at least one flow path surface of the at least one flow path.
A first heat sensor located within the first heat sensor receiver, configured to measure the first temperature of at least one flow path surface of the at least one flow path at the first position. The first heat sensor and
A second heat sensor receiver formed in the plasma source body in the vicinity of the at least one flow path surface of the at least one flow path, and in the plasma source body in the vicinity of the at least one gas outlet. The second heat sensor receiver formed in
A second heat sensor located within the second heat sensor receiver, configured to measure the second temperature of the at least one flow path surface of the at least one flow path at the second position. The second heat sensor and
A plasma source comprising at least one heat conditioning device coupled to the plasma source body.
前記少なくとも１つの任意的な熱センサレシーバ内に位置する少なくとも１つの任意的な熱センサであって、前記プラズマ源本体内の位置で前記少なくとも１つの流路の前記少なくとも１つの流路面の温度を測定するように構成される少なくとも１つの任意的な熱センサと、
をさらに備える、請求項10に記載のプラズマ源。 The plasma in the vicinity of the at least one gas outlet of at least one optional thermal sensor receiver formed in the plasma source body in the vicinity of the at least one flow path surface of the at least one flow path. With at least one optional thermal sensor receiver formed within the source body,
At least one optional thermal sensor located within the at least one optional thermal sensor receiver, the temperature of the at least one channel surface of the at least one channel at a position within the plasma source body. With at least one optional thermal sensor configured to measure,
10. The plasma source of claim 10.
少なくとも１つのガス源及び少なくとも１つのガス流出口と流体的に連絡している少なくとも１つのガス流入口を規定するプラズマ源本体を用意し、前記プラズマ源は、前記プラズマ源本体内に形成された少なくとも１つの流路面により規定される少なくとも１つの流路を有し、前記少なくとも１つの流路は、前記少なくとも１つのガス流入口及び前記少なくとも１つのガス流出口と流体的に連絡しており、
前記少なくとも１つのガス源から前記少なくとも１つの流入口を介して前記少なくとも１つの流路の内部に少なくとも１つの入力ガスを流し、
少なくとも１つの電力源を用いて前記プラズマ源本体内に少なくとも１つのプラズマ領域を形成し、
前記少なくとも１つの流路を通って流れる前記少なくとも１つの入力ガスの少なくとも一部を解離して少なくとも１つの解離ガスを形成し、
前記少なくとも１つのプラズマ領域の近傍に位置する少なくとも第１のセンサを用いて前記少なくとも１つの解離ガスの再結合から得られる第１の温度を測定し、
前記少なくとも１つのプラズマ領域から離れて配置される少なくとも第２のセンサを用いて少なくとも１つの再解離ガスの少なくとも第２の温度を測定し、
前記少なくとも１つの第１のセンサにより測定された前記解離ガスの結合の前記第１の温度を、前記少なくとも１つの第２のセンサにより測定された前記少なくとも１つの再解離ガスの前記第２の温度と比較することにより、前記プラズマ源の前記ラジカル出力をモニタリングする、
方法。 A method of monitoring radical output from a plasma source,
A plasma source body is provided that defines at least one gas source and at least one gas inlet that is in fluid contact with the at least one gas outlet, the plasma source being formed within the plasma source body. It has at least one flow path defined by at least one flow path surface, the at least one flow path being in fluid contact with the at least one gas inlet and the at least one gas outlet.
At least one input gas is flowed from the at least one gas source to the inside of the at least one flow path through the at least one inlet.
At least one power source is used to form at least one plasma region within the plasma source body.
At least a part of the at least one input gas flowing through the at least one flow path is dissociated to form at least one dissociated gas.
The first temperature obtained from the recombination of the at least one dissociated gas is measured using at least the first sensor located in the vicinity of the at least one plasma region.
At least a second temperature of at least one re-dissociation gas is measured using at least a second sensor located away from the at least one plasma region.
The first temperature of the coupling of the dissociated gas measured by the at least one first sensor is the second temperature of the at least one redissociation gas measured by the at least one second sensor. To monitor the radical output of the plasma source by comparison with,
Method.
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| US201862684820P | 2018-06-14 | 2018-06-14 | |
| US62/684,820 | 2018-06-14 | ||
| PCT/US2019/036796 WO2019241405A1 (en) | 2018-06-14 | 2019-06-12 | Radical output monitor for a remote plasma source and method of use |
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- 2019-06-12 SG SG11202011069RA patent/SG11202011069RA/en unknown
- 2019-06-12 CN CN201980038899.7A patent/CN112335342B/en active Active
- 2019-06-12 US US16/438,827 patent/US11114287B2/en active Active
- 2019-06-12 KR KR1020217001013A patent/KR20210009428A/en not_active Application Discontinuation
- 2019-06-12 WO PCT/US2019/036796 patent/WO2019241405A1/en unknown
- 2019-06-13 TW TW108120410A patent/TWI809122B/en active
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