JPWO2019065221A1 - Paste composition, semiconductor devices and electrical / electronic components - Google Patents

Abstract

Provided are a paste composition for semiconductor adhesion and a paste composition for a light emitting device, which are excellent in high thermal conductivity and heat dissipation and can satisfactorily bond a semiconductor element and a light emitting element to a substrate without pressure. (A) silver fine particles having a thickness or minor axis of 1 to 200 nm, (B) silver powder having an average particle diameter other than (A) silver fine particles of more than 0.2 μm and 30 μm or less, and (C) an acid anhydride structure. When the total amount of (A) silver fine particles and (B) silver powder is 100 parts by mass, (C) sintering aid is blended in an amount of 0.01 to 1 part by mass. Paste composition, semiconductor device using the paste composition as a die attach paste, and electrical / electronic parts used as a material for adhering heat-dissipating members.

Description

The present disclosure relates to a paste composition and semiconductor devices and electrical / electronic components manufactured by using the paste composition.

The amount of heat generated during the operation of semiconductor products is increasing with the increase in capacity, high speed processing, and fine wiring of semiconductor products, and so-called thermal management, in which heat is released from semiconductor products, has been required. For this reason, a method of attaching a heat radiating member such as a heat spreader or a heat sink to a semiconductor product is generally adopted, and a material having a higher thermal conductivity of the material itself for adhering the heat radiating member has been desired.

Further, depending on the form of the semiconductor product, in order to make the thermal management more efficient, a method of adhering a heat spreader to the die pad portion of the semiconductor element itself or the lead frame to which the semiconductor element is adhered, and exposing the die pad portion to the package surface. A method (see, for example, Patent Document 1) of providing a function as a heat radiating plate by causing the heat dissipation plate is adopted.

Further, the semiconductor element may be adhered to an organic substrate having a heat dissipation mechanism such as a thermal via. In this case as well, the material for adhering the semiconductor element is required to have high thermal conductivity. Further, due to the recent increase in brightness of white light emitting LEDs, it has come to be widely used in lighting devices such as backlight lighting, ceiling lights, and downlights of full-color liquid crystal screens. By the way, due to the high current input due to the high output of the light emitting element, the adhesive that adheres the light emitting element and the substrate may be discolored by heat, light, etc., or the electric resistance value may change with time. .. In particular, in the method in which the bonding completely relies on the adhesive force of the adhesive, the bonding material loses its adhesive force at the solder melting temperature and peels off at the time of solder mounting of the electronic component, which may lead to non-lighting. Further, improving the performance of the white light emitting LED leads to an increase in the amount of heat generated by the light emitting element chip, and accordingly, the structure of the LED and the members used therein are also required to have improved heat dissipation.

In particular, in recent years, the development of power semiconductor devices using wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride, which have low power loss, has become active, and the heat resistance of the device itself is high, and the temperature is 250 ° C. or higher due to a large current. High temperature operation is possible. However, in order to exhibit its characteristics, it is necessary to efficiently dissipate heat generated by operation, and a bonding material having excellent long-term high-temperature heat resistance in addition to conductivity and heat transfer is required.

As described above, high thermal conductivity is required for the material used for adhering each member of the semiconductor device and the electric / electronic parts (diatouch paste, material for adhering the heat radiation member, etc.). In addition, these materials also need to withstand the reflow process when the product is mounted on the substrate, and in many cases, a large area of adhesion is required, and warpage occurs due to the difference in the coefficient of thermal expansion between the constituent members. It is also necessary to have low stress property to reduce the coefficient.

Here, usually, in order to obtain an adhesive having high thermal conductivity, a metal filler such as silver powder or copper powder, or a ceramic filler such as aluminum nitride or boron nitride is used as a filler and has a high content in an organic binder. (See, for example, Patent Document 2). However, as a result, the elastic modulus of the cured product becomes high, and it is difficult to have both good thermal conductivity and good reflowability (which is unlikely to cause peeling after the reflow treatment).

However, in recent years, as a candidate for a bonding method that can withstand such demands, a bonding method using silver nanoparticles, which enables bonding under conditions lower than that of bulk silver, has been attracting attention (for example,). See Patent Document 3).

Japanese Unexamined Patent Publication No. 2006-086273 Japanese Unexamined Patent Publication No. 2005-113059 Japanese Unexamined Patent Publication No. 2011-240406

However, bonding with silver nanoparticles usually requires heating and pressurization at the time of bonding. Therefore, there is a risk of damaging the element due to pressurization.

Further, as for the atmosphere when forming a conjugate using silver nanoparticles, an oxidative atmosphere like that in the atmosphere is required because the organic substances covering the surface of the silver nanoparticles are removed by oxidative decomposition. Therefore, when a base material such as copper is used, oxidation of the copper surface, which is the base material, may cause poor adhesion of the sealing material. In particular, the finer the bonded body, the more the adhesion is required. Therefore, if it is possible to provide a bonding material that exhibits sufficient bonding force in an inert atmosphere such as nitrogen, oxidation of the base material can be reduced, and the application fields and applicability of the bonding agent can be dramatically expanded. It will also be possible to expand.

Therefore, the present disclosure describes a paste composition having excellent thermal conductivity, good adhesive properties, and reflow peeling resistance, and a semiconductor device and electrical / electronic components having excellent reliability by using the paste composition as an adhesive material. To provide parts.

The paste composition of the present disclosure includes (A) silver fine particles having a thickness or minor axis of 1 to 200 nm, and (B) silver powder having an average particle diameter of more than 0.2 μm and 30 μm or less other than the (A) silver fine particles. , (C) A sintering aid containing an acid anhydride structure, and when the total amount of the (A) silver fine particles and the (B) silver powder is 100 parts by mass, the (C) sintering aid Is compounded in an amount of 0.01 to 1 part by mass.

In this paste composition, the silver fine particles (A) have a central particle diameter of 0.3 to 15 μm, a thickness of 10 to 200 nm, and (A1) plate-type silver fine particles and (A2) an average particle diameter of 10 to 200 nm. It contains at least one kind of spherical silver fine particles of the above, and may be self-sintered at 100 ° C. to 250 ° C. Further, the sintering aid containing the acid anhydride structure (C) may be an acid anhydride having a melting point of 40 to 150 ° C. and a boiling point of 100 to 300 ° C. Further, the mass ratio of (A) silver fine particles to (B) silver powder may be 10:90 to 90:10.

The semiconductor device of the present disclosure includes a substrate and a semiconductor element bonded and fixed on the substrate via a die attach material containing the paste composition of the present disclosure.

Further, the electric / electronic component of the present disclosure includes a heat generating member and a heat radiating member fixed by adhering to the heat generating member via a heat radiating member adhesive material containing the paste composition of the present disclosure.

According to the paste composition of the present disclosure, the cured product has excellent thermal conductivity, good adhesive properties, and excellent reflow peeling resistance, so that the paste composition can be used for semiconductor adhesion and for light emitting devices.

Then, by using the paste composition as these adhesive materials, it becomes possible to provide a semiconductor device and electrical / electronic parts having excellent reliability.

As described above, the paste composition of the present disclosure has (A) silver fine particles having a thickness or minor axis of 1 to 200 nm, and (B) an average particle diameter other than the (A) silver fine particles of more than 0.2 μm and 30 μm. It contains the following silver powder and a sintering aid containing (C) an acid anhydride structure.

With such a configuration, a paste composition having little change in viscosity and excellent storage stability can be obtained. Further, the paste composition of the present disclosure can be bonded without pressure and has excellent adhesiveness. Therefore, the semiconductor device and the electric / electronic parts manufactured by using the paste composition as a die attach paste or a material for adhering a heat radiating member have excellent reflow resistance characteristics.

Hereinafter, the present disclosure will be described in detail.

The silver fine particles (A) used in the present disclosure are not particularly limited as long as their thickness or minor axis is 1 to 200 nm. The shape of the silver fine particles can be spherical, plate-shaped, flake-shaped, scaly-shaped, dendritic-shaped, rod-shaped, wire-shaped, or the like. Here, the thickness of the plate type, the flake shape, and the scale shape, and the shortest diameter of the dendritic shape, the rod shape, the wire shape, and the spherical shape may satisfy the above range. The silver fine particles (A) may contain at least one of (A1) plate-type silver fine particles and (A2) spherical silver fine particles.

The (A1) plate-type silver fine particles used in the present disclosure are plate-shaped flaky particles having a uniform thickness, which are obtained by greatly growing one metal crystal surface, unlike spherical nanoparticles, and have a resin composition. Examples thereof include known plate-type silver fine particles that can be blended into a product. Generally, the size is on the order of microns and the thickness is about several nanometers, and it has a shape such as a triangular plate shape, a hexagonal plate shape, or a truncated triangular plate shape. Further, the upper surface thereof may be widely covered with the [111] plane.

(A1) Since the plate-type silver fine particles are sintered mainly in the thickness direction, the internal stress is smaller than that using spherical silver nanoparticles. In addition, the highly oriented plate-type silver fine particles make it a bonding material with excellent reflectance. Further, unlike ordinary silver fine particles (silver nanoparticles), plate-type silver fine particles are not easily affected by the presence or absence of oxygen, so that they can be sintered in an atmosphere of an inert gas such as nitrogen.
Further, by incorporating the plate-type silver fine particles in the paste composition, the thermal conductivity becomes higher than that in which only ordinary silver powder is filled.

The (A1) plate-type silver fine particles may have a central particle diameter of 0.3 to 15 μm. By setting the center particle diameter in this range, the dispersibility of the silver fine particles in the resin component can be improved.
Further, the paste composition containing such silver fine particles can suppress clogging of nozzles, distortion of chips during assembly of semiconductor elements, and the like. Here, the central particle size refers to a 50% integrated value (50% particle size) in a volume-based particle size distribution curve obtained by measuring with a laser diffraction type particle size distribution measuring device. Further, the thickness may be 10 to 200 nm.
This thickness is measured by data processing an observation image acquired by a transmission electron microscope (TEM) or a scanning electron microscope (SEM). Further, the average thickness of this thickness may be within the above range. This average thickness is calculated as the number average thickness as follows.

To calculate the thickness of the plate-type silver fine particles, first, the range of thickness (maximum thickness: x1, minimum thickness: xn + 1) measured from 50 to 100 observation images of the plate-type silver fine particles is set. Divide into n, and set the section of each thickness as [xj, xj + 1] (j = 1, 2, ..., N). The division in this case is an equal division on a logarithmic scale. Further, the representative thickness in each thickness section based on the logarithmic scale is expressed by the following formula.

このμは、対数スケール上の数値であり、厚さとしての単位を持たないので、厚さの単位に戻すために１０^μすなわち１０のμ乗を計算する。この１０^μを個数平均厚さとする。Further, assuming that r _j (j = 1, 2, ..., N) is a relative quantity (difference%) corresponding to the interval [x _j , x _{j + 1} ], and the total of all the intervals is 100%. The average value μ on the logarithmic scale can be calculated by the following formula.

Since this μ is a numerical value on a logarithmic scale and has no unit as a thickness, 10 ^μ, that is, 10 μ power is calculated in order to return to the unit of thickness. ^Let this 10 ^μ be the number average thickness.

Further, the long side in the direction perpendicular to the thickness direction may be in the range of 8 to 150 times the thickness, or 10 to 50 times the thickness. Further, the short side in the direction perpendicular to the thickness direction may be in the range of 1 to 100 times the thickness, or may be 3 to 50 times the thickness.

The (A1) plate-type silver fine particles can be self-sintered at 100 to 250 ° C. By containing the silver fine particles that are self-sintered at 100 to 250 ° C. in this way, the fluidity of the silver fine particles is improved during thermosetting. As a result, the number of contacts between the silver fine particles increases.
Further, as the number of contacts between the silver fine particles increases, the area of the contacts increases, and the conductivity is remarkably improved.
Therefore, the sintering temperature of the plate-type silver fine particles may be 100 to 200 ° C.
Here, self-sintering means that sintering is performed by heating at a temperature lower than the melting point without applying pressure or additives.

(A1) The plate-type silver fine particles may be a single crystal. Since the paste composition contains single crystal plate-type silver fine particles, good conductivity can be ensured even when cured at a low temperature.

(A1) The plate-type silver fine particles are oriented in the horizontal direction in the coating film, have more contacts, and can improve conductivity. This is due to the volume phenomenon due to the compression by the weight of the chip during thermosetting, the vaporization of the low boiling point components contained in the paste composition, and the volume reduction action such as the volume shrinkage due to the heat curing of the paste composition. This is because the silver fine particles can be naturally oriented so as to be laminated in the direction, and a large contact point between the silver fine particles can be secured.

Further, the surface of the (A1) plate-type silver fine particles can be surface-treated as needed. For example, stearic acid, palmitic acid, hexane acid, oleic acid and the like can be mentioned for improving the compatibility. ..

Examples of such (A1) plate-type silver fine particles include M612 (trade name; center particle diameter 6 to 12 μm, particle thickness 60 to 100 nm, melting point 250 ° C.) and M27 (trade name; center) manufactured by Toxen Industries, Ltd. Particle diameter 2-7 μm, particle thickness 60-100 nm, melting point 200 ° C.), M13 (trade name; center particle diameter 1-3 μm, particle thickness 40-60 nm, melting point 200 ° C.), N300 (trade name; center particle diameter 0. 3 to 0.6 μm, particle thickness 50 nm or less, melting point 150 ° C.) and the like. These plate-type silver fine particles may be used alone or in combination. In particular, in order to improve the filling rate, for example, among the above-mentioned plate-type silver fine particles, relatively large silver fine particles such as M27 and M13 may be used in combination with a small particle size such as N300.

The (A2) spherical silver fine particles used in the present disclosure have a particle size of 10 to 200 nm. The (A2) spherical silver fine particles are usually provided with a coating layer made of an organic compound on the metal surface of the silver fine particles, or the silver fine particles are dispersed in the organic compound. In such a form, since the contained silver fine particles can be prevented from directly contacting the metal surface, it is possible to reduce the formation of agglomerates of silver fine particles, and the silver fine particles are individually dispersed. Can be held at. The particle size is measured by data processing an observation image acquired by a transmission electron microscope (TEM) or a scanning electron microscope (SEM). Further, the average particle size of the (A2) spherical silver fine particles may be within the above range. This average particle size is calculated as the number average particle size of the particle size measured from 50 to 100 observation images of spherical silver fine particles. The number average particle diameter may be the same as the above-mentioned calculation of the average thickness, and the average value may be calculated.

The coating layer on the surface of the silver fine particles or the organic compound that disperses the silver fine particles includes an organic compound having nitrogen, carbon, or oxygen having a molecular weight of 20000 or less as constituent elements, specifically, a functional group such as an amino group or a carboxyl group. Organic compounds are used.
Examples of the organic compound containing a carboxyl group used here include one or more organic compounds selected from organic carboxylic acids having a molecular weight of 110 to 20000.
For example, hexanic acid, heptanic acid, octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, icosanoic acid, docosanoic acid, 2-ethylhexanoic acid, oleic acid, linoleic acid, linolenic acid, terminal dipropion Examples include carboxylic acids such as acid polyethylene oxide. Further, as the organic compound, a carboxylic acid derivative of the above-mentioned carboxylic acid can also be used.

Further, examples of the organic compound containing an amino group used here include alkylamines and the like.
For example, butylamine, methoxyethylamine, 2-ethoxyethylamine, hexylamine, octylamine, 3-butoxypropylamine, nonylamine, dodecylamine, hexadodecylamine, octadecylamine, cocoamine, tallowamine, tallowamine hydroxide, oleylamine, laurylamine, and Primary amines such as stearylamine, 3-aminopropyltriethoxysilane, etc., secondary amines such as dicocoamine, dihydrogenated tallowamine, and distearylamine, as well as dodecyldimethylamine, didodecylmonomethylamine, tetra. Tertiary amines such as decyldimethylamine, octadecyldimethylamine, cocodimethylamine, dodecyltetradecyldimethylamine, and trioctylamine, as well as naphthalenediamine, stearylpropylenediamine, octamethylenediamine, nonanediamine, terminal diamine poly. There are diamines such as ethylene oxide, triamine-terminated polypropylene oxides, diamine-terminated polypropylene oxides and the like.

(A2) When the molecular weight of the organic compound that coats or disperses the spherical silver fine particles is less than 20000, the organic compound is likely to be detached from the surface of the metal particles. Therefore, after the paste is fired, the residual amount of the organic compound in the cured product is reduced. As a result, good conductivity can be obtained. Further, when the molecular weight of the organic compound that coats or disperses the (A2) spherical silver fine particles is 50 or more, the aggregation of the silver fine particles is reduced in the paste form, so that the storage is good. Stability is obtained.

(A2) The spherical silver fine particles may have a mass ratio of 90: 10 to 99.5: 0.5 between the silver fine particles and the organic compound that coats or disperses the silver fine particles. When the mass ratio is in this range, agglomeration of silver fine particles can be reduced in the paste form, and low-temperature sinterability can be imparted to the paste composition. Furthermore, after the paste is fired, the residual organic compound in the cured product is reduced.

As a result, the filling rate of silver particles in the paste composition including the silver powder (B) described later can be improved.
Further, by using the above-mentioned (A1) plate-type silver fine particles and (A2) spherical silver fine particles in combination as the (A) silver fine particles, the paste composition can obtain characteristics such as the filling rate of the silver particles and low-temperature sinterability. It can be better.

The silver powder (B) used in the present disclosure is a silver powder having an average particle diameter of more than 0.2 μm and 30 μm or less, and is usually a silver powder as an inorganic filler added to impart conductivity to a resin adhesive. All you need is. The paste composition obtained by adding micron-order silver particles such as (B) silver powder in addition to the above (A) silver fine particles was used for adhesion between an element such as a semiconductor element and a support substrate. In that case, the bonding strength can be further improved. Further, examples of the shape of the silver particles used here include flakes, scales, dendritic, rods, wires, and spheres. The (B) silver powder does not contain (A) silver fine particles.

Here, the average particle size refers to a 50% integrated value (50% particle size) in a volume-based particle size distribution curve obtained by measuring with a laser diffraction type particle size distribution measuring device.

The ratio of these (A) silver fine particles to (B) silver powder may be such that the mass ratio of (A): (B) is 10:90 to 90:10 when the total amount thereof is 100. It may be 10:90 to 50:50. When the ratio of (A) silver fine particles and (B) silver powder is in this range, voids do not occur in the cured product, and the stringing phenomenon at the time of mounting does not occur, so that good workability can be obtained. ..

The sintering aid containing the (C) acid anhydride structure used in the present disclosure may be one that promotes the sintering of the above (A) silver fine particles or one that densifies the sintered body obtained by sintering. For example, it is not particularly limited. The (C) sintering aid has a structure in which two molecules of oxoacid are dehydrated and condensed. For example, a compound having a plurality of carboxyl groups has a structure in which the carboxyl groups are dehydrated and condensed in the molecule. All you need is.
In particular, since carboxylic acid anhydride has a high coordinating ability on the surface of silver fine particles, it is substituted with a protecting group on the surface of silver fine particles, and carboxylic acid anhydride is coordinated on the surface of silver fine particles. The silver fine particles in which the carboxylic acid anhydride is coordinated on the surface show good dispersibility. Furthermore, since the carboxylic acid anhydride is excellent in volatility, it exhibits good low-temperature sinterability.

Specific examples of the (C) sintering aid include acetic anhydride, propionic anhydride, butyric anhydride, isobutyric anhydride, valeric anhydride, trimethylacetic anhydride, hexanoic anhydride, and heptanic acid. Anhydride, decanoic hydride, lauric hydride, myristic hydride, palmitic hydride, stearic hydride, docosanoic hydride, crotonic hydride, methacrylic hydride, oleic hydride, linoleic acid Anhydride, Chloroacetic anhydride, Iodoacetic anhydride, Dichloroacetic anhydride, Trifluoroacetic anhydride, Chlorodifluoroacetic anhydride, Trichloroacetic anhydride, Pentafluoropropionic anhydride, Heptafluorobutyric anhydride, Kohaku anhydride Acid, methylsuccinic anhydride, 2,2-dimethylsuccinic anhydride, itaconic acid anhydride, maleic anhydride, glutaric anhydride, diglycolic acid anhydride, benzoic acid anhydride, phenylsuccinic anhydride, phenylmalein Examples thereof include acid anhydride, homophthalic anhydride, isatoic anhydride, phthalic anhydride, tetrafluorophthalic anhydride, and tetrabromophthalic anhydride.

Among these, compounds that do not contain aromatics are excellent in low-temperature sinterability without the risk of void generation.

The melting point of the (C) sintering aid used in the present disclosure may be in the range of 40 to 150 ° C. When the melting point is in this range, the storage stability of the paste composition, the workability at the time of applying the paste, and the sintering property at the time of heating the paste are good.

The boiling point of the (C) sintering aid used in the present disclosure may be 100 to 300 ° C. or 100 to 275 ° C. If the boiling point is in this range, there is no risk of void generation. By blending such an acid anhydride as a sintering aid, a paste composition having excellent adhesiveness, thermal conductivity, and reflow peeling resistance can be obtained.

Further, in the present disclosure, the paste composition may use (D) a thermosetting resin. The thermosetting resin (D) used in the present disclosure is not particularly limited as long as it is a thermosetting resin generally used for adhesives. The thermosetting resin (D) may be a liquid resin at room temperature (25 ° C.). Examples of the (D) thermosetting resin include cyanate resin, epoxy resin, radically polymerizable acrylic resin, and maleimide resin. By including the thermosetting resin (D), an adhesive material (paste) having an appropriate viscosity can be obtained. Further, by containing (D) a thermosetting resin, the temperature of the paste composition rises due to the reaction heat at the time of curing, and there is also an effect of promoting the sinterability of the silver fine particles.

The cyanate resin is a compound having an -NCO group in the molecule, and is a resin that is cured by forming a three-dimensional network structure by reacting the -NCO group by heating. Specifically, 1,3-disianatobenzene, 1,4-disyanatobenzene, 1,3,5-trisianatobenzene, 1,3-disianatonaphthalene, 1,4-disianatonaphthalene, 1, 6-Disianatonaphthalene, 1,8-Disianatonaphthalene, 2,6-Disianatnaphthalene, 2,7-Disianatnaphthalene, 1,3,6-Trisianatonaphthalene, 4,4'-Disianatobiphenyl, Bis (4-Cyanatophenyl) methane, bis (3,5-dimethyl-4-cyanatophenyl) methane, 2,2-bis (4-cyanatophenyl) propane, 2,2-bis (3,5-dibromo) -4-Cyanatophenyl) propane, bis (4-cyanatophenyl) ether, bis (4-cyanatophenyl) thioether, bis (4-cyanatophenyl) sulfone, tris (4-cyanatophenyl) phosphite, Examples thereof include tris (4-cyanatophenyl) phosphate and cyanates obtained by the reaction of novolak resin with cyanogen halide. Further, as the cyanate resin, a prepolymer having a triazine ring formed by quantifying the cyanate group of these polyfunctional cyanate resins can also be used. This prepolymer is produced by polymerizing the above-mentioned polyfunctional cyanate resin monomer using, for example, an acid such as mineral acid or Lewis acid, a base such as sodium alcoholate or tertiary amines, or a salt such as sodium carbonate as a catalyst. can get.

As the curing accelerator for the cyanate resin, generally known ones can be used. Examples include organic metal complexes such as zinc octylate, tin octylate, cobalt naphthenate, zinc naphthenate, iron acetylacetone, metal salts such as aluminum chloride, tin chloride and zinc chloride, and amines such as triethylamine and dimethylbenzylamine. However, it is not limited to these. These curing accelerators can be used alone or in admixture of two or more. The cyanate resin can also be used in combination with other resins such as epoxy resin, acrylic resin, and maleimide resin.

Epoxy resin is a compound having one or more glycidyl groups in the molecule, and is a resin that forms a three-dimensional network structure and is cured by reacting the glycidyl groups by heating.
A compound containing two or more glycidyl groups in one molecule can be obtained by epoxidizing a compound having two or more hydroxyl groups. Examples of such compounds include bisphenol compounds such as bisphenol A, bisphenol F, and biphenol or derivatives thereof, hydrogenated bisphenol A, hydrogenated bisphenol F, hydrogenated biphenol, cyclohexanediol, cyclohexanedimethanol, and alicyclic such as cyclohexanediethanol. Bifunctional diols having a structure or derivatives thereof, butane diols, hexane diols, octane diols, nonane diols, decane diols and other aliphatic diols or epoxidized derivatives thereof, trihydroxyphenylmethane skeletons, aminophenols Examples include trifunctional compounds in which a compound having a skeleton is epoxidized, and polyfunctional compounds in which phenol novolac resin, cresol novolac resin, phenol aralkyl resin, biphenyl aralkyl resin, naphthol aralkyl resin, etc. are epoxidized. Not limited. Further, since this epoxy resin becomes a paste or liquid as a resin composition at room temperature, it may be liquid alone or as a mixture at room temperature. It is also possible to use reactive diluents as is normally done. Examples of the reactive diluent include monofunctional aromatic glycidyl ethers such as phenylglycidyl ether and cresyl glycidyl ether, and aliphatic glycidyl ethers.

At this time, a curing agent is used for the purpose of curing the epoxy resin, and examples of the curing agent for the epoxy resin include aliphatic amines, aromatic amines, dicyandiamides, dihydrazide compounds, acid anhydrides, and phenol resins. .. Examples of the dihydrazide compound include carboxylic acid dihydrazide such as adipic acid dihydrazide, dodecanoic acid dihydrazide, isophthalic acid dihydrazide, and p-oxybenzoic acid dihydrazide, and acid anhydrides include phthalic anhydride, tetrahydrophthalic anhydride, and hexahydroanhydride. Examples thereof include phthalic acid, endomethylenetetrahydrophthalic anhydride, dodecenyl succinic anhydride, a reaction product of maleic anhydride and polybutadiene, and a copolymer of maleic anhydride and styrene.

The phenolic resin used as a curing agent for an epoxy resin is a compound having two or more phenolic hydroxyl groups in one molecule, and a compound having one phenolic hydroxyl group in one molecule may have a crosslinked structure. Since it cannot be used, the properties of the cured product deteriorate and it cannot be used.

Further, the number of phenolic hydroxyl groups in one molecule may be 2 or more, but the number of phenolic hydroxyl groups may be 2 to 5, or 2 or 3. When the number of phenolic hydroxyl groups is in this range, an appropriate molecular weight tonari and a viscosity with good workability can be obtained.

Examples of such compounds include bisphenol F, bisphenol A, bisphenol S, tetramethyl bisphenol A, tetramethyl bisphenol F, tetramethyl bisphenol S, dihydroxydiphenyl ether, dihydroxybenzophenone, tetramethyl biphenol, etylidene bisphenol, and methyl ethilidenebis (methylphenol). ), Cyclohexylidene bisphenol, bisphenols such as biphenol and their derivatives, trifunctional phenols such as tri (hydroxyphenyl) methane, tri (hydroxyphenyl) ethane and their derivatives, phenols such as phenol novolac and cresol novolac. Examples of the compound obtained by reacting with formaldehyde include those having a main dinuclear or trinuclear body and derivatives thereof.

Further, the paste composition of the present disclosure may contain a curing accelerator in order to accelerate curing. Examples of the curing accelerator for the epoxy resin include imidazoles, triphenylphosphine or tetraphenylphosphine and salts thereof, amine compounds such as diazabicycloundecene and salts thereof. Examples of the curing accelerator for the epoxy resin include 2-methylimidazole, 2-ethylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2 - phenyl-4,5-dihydroxy methyl imidazole, _2-C 11 _{H 23} - imidazole, may be used imidazole compounds such as the adduct of 2-methylimidazole and 2,4-diamino-6-vinyl-triazine. Further, the melting point of the imidazole compound may be 180 ° C. or higher. Further, the epoxy resin may be used in combination with a cyanate resin, an acrylic resin, or a maleimide resin.

A radically polymerizable acrylic resin is a compound having one or more (meth) acryloyl groups in the molecule, and is a resin that forms a three-dimensional network structure and is cured by the reaction of the (meth) acryloyl groups. ..

Here, examples of the acrylic resin include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 3-hydroxypropyl (meth) acrylate, 2-hydroxybutyl (meth) acrylate, and 3-hydroxybutyl. (Meta) acrylate, 4-hydroxybutyl (meth) acrylate, 1,2-cyclohexanediol mono (meth) acrylate, 1,3-cyclohexanediol mono (meth) acrylate, 1,4-cyclohexanediol mono (meth) acrylate, 1,2-Cyclohexanedimethanol mono (meth) acrylate, 1,3-cyclohexanedimethanol mono (meth) acrylate, 1,4-cyclohexanedimethanol mono (meth) acrylate, 1,2-cyclohexanediethanol mono (meth) acrylate , 1,3-Cyclohexanediethanol mono (meth) acrylate, 1,4-cyclohexanediethanol mono (meth) acrylate, glycerin mono (meth) acrylate, glycerin di (meth) acrylate, trimethylolpropan mono (meth) acrylate, trimethylol Propane di (meth) acrylate, pentaerythritol mono (meth) acrylate, pentaerythritol di (meth) acrylate, pentaerythritol tri (meth) acrylate, neopentyl glycol mono (meth) acrylate and other (meth) acrylates having hydroxyl groups, and Examples thereof include (meth) acrylate having a carboxyl group obtained by reacting (meth) acrylate having these hydroxyl groups with dicarboxylic acid or a derivative thereof. Examples of the dicarboxylic acids that can be used here include oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, suberic acid, azelaic acid, sebacic acid, maleic acid, fumaric acid, phthalic acid, and tetrahydrophthalic acid. , Hexahydrophthalic acid and derivatives thereof and the like.

In addition, methyl (meth) acrylate, ethyl (meth) acrylate, n-butyl (meth) acrylate, isobutyl (meth) acrylate, t-butyl (meth) atarilate, isodecyl (meth) acrylate, lauryl (meth) acrylate, tridecyl. (Meta) acrylate, cetyl (meth) acrylate, stearyl (meth) acrylate, isoamyl (meth) acrylate, isostearyl (meth) acrylate, behenyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, and other alkyl (meth) Acrylate, cyclohexyl (meth) acrylate, t-butylcyclohexyl (meth) acrylate, tetrahydrofurfuryl (meth) acrylate, benzyl (meth) acrylate, phenoxyethyl (meth) acrylate, isobornyl (meth) acrylate, glycidyl (meth) acrylate, Trimethylol propantri (meth) acrylate, zinc mono (meth) acrylate, zinc di (meth) acrylate, dimethylaminoethyl (meth) acrylate, diethylaminoethyl (meth) acrylate, neopentyl glycol (meth) acrylate, trifluoroethyl (meth) Acrylate, 2,2,3,3-tetrafluoropropyl (meth) acrylate, 2,2,3,3,4,4-hexafluorobutyl (meth) acrylate, perfluorooctyl (meth) acrylate, perfluorooctyl ethyl (Meta) acrylate, ethylene glycol di (meth) acrylate, propylene glycol di (meth) acrylate, 1,4-butanediol di (meth) acrylate, 1,6-hexanediol di (meth) acrylate, 1,9-nonane Didioldi (meth) acrylate, 1,3-butanediol di (meth) acrylate, 1,10-decanediol di (meth) acrylate, tetramethylene glycol di (meth) acrylate, methoxyethyl (meth) acrylate, butoxyethyl ( Meta) acrylate, ethoxydiethylene glycol (meth) acrylate, methoxypolyalkylene glycol mono (meth) acrylate, octoxypolyalkylene glycol mono (meth) acrylate, lauroxypolyalkylene glycol mono (meth) acrylate, stearoxypolyalkylene glycol mono (meth) Meta) Acrylate, Aryloxypolyalkylene glycol No (meth) acrylate, nonylphenoxypolyalkylene glycol mono (meth) acrylate, acryloylmorpholine, hydroxyethylacrylamide, N, N'-methylenebis (meth) acrylamide, N, N'-ethylenebis (meth) acrylamide, 1, 2-Di (meth) acrylamide ethylene glycol, di (meth) acryloyloxymethyltricyclodecane, N- (meth) acryloyloxyethyl maleimide, N- (meth) acryloyloxyethyl hexahydrophthalimide, N- (meth) ) Acrylamide oxyethylphthalimide, n-vinyl-2-pyrrolidone, styrene derivative, α-methylstyrene derivative and the like can also be used.

Further, polyethers having a molecular weight of 100 to 10,000, polyesters, polycarbonates, poly (meth) acrylates having a (meth) acrylic group, (meth) acrylates having a hydroxyl group, (meth) acrylamide having a hydroxyl group, etc. You may use it.

Here, as the polyether skeleton, an organic group having 1 to 6 carbon atoms may be repeated via an ether bond. Further, the polyether skeleton may not contain an aromatic ring. A compound having a (meth) acrylic group in a polyether can be obtained by reacting a polyether polyol with (meth) acrylic acid or a derivative thereof.

The polyester skeleton may be an organic group having 1 to 6 carbon atoms repeated via an ester bond. Further, the polyester skeleton may not contain an aromatic ring. A compound having a (meth) acrylic group in polyester can be obtained by reacting a polyester polyol with (meth) acrylic acid or a derivative thereof.

The polycarbonate skeleton may be an organic group having 1 to 6 carbon atoms repeated via a carbonate bond. Further, the polycarbonate skeleton may not contain an aromatic ring. A compound having a (meth) acrylic group in polycarbonate can be obtained by reacting a polycarbonate polyol with (meth) acrylic acid or a derivative thereof.

The poly (meth) acrylate skeleton includes a copolymer of (meth) acrylic acid and (meth) acrylate, a (meth) acrylate having a hydroxyl group and a carboxyl group, and a (meth) acrylate having no polar group such as a hydroxyl group. A copolymer of (meth) acrylate having a glycidyl group and a (meth) acrylate having no polar group may be used.
The above-mentioned copolymers can be obtained by reacting with a (meth) acrylate having a hydroxyl group having a hydroxyl group or a (meth) acrylate having a glycidyl group, respectively, with (meth) acrylic acid having a hydroxyl group having no polar group. It is possible to obtain it by reacting with the derivative.
A compound having a (meth) acrylic group in poly (meth) acrylate can be obtained by reacting a poly) meta) acrylate polyol with (meth) acrylic acid or a derivative thereof.

The (meth) acrylate or (meth) acrylamide having a hydroxyl group is a (meth) acrylate or (meth) acrylamide having one or more (meth) acrylic groups in one molecule, and contains a hydroxyl group. To do.
A (meth) acrylate having a hydroxyl group can be obtained by reacting a polyol compound with (meth) acrylic acid and a derivative thereof. For this reaction, a known reaction can be used, and usually 0.5 to 5 times mol of acrylic acid ester or acrylic acid is used with respect to the polyol compound.
Further, (meth) acrylamide having a hydroxyl group can be obtained by reacting an amine compound having a hydroxyl group with (meth) acrylic acid and a derivative thereof. The method for producing (meth) acrylamides by reacting a (meth) acrylic acid ester with an amine compound is to add amine, cyclopentadiene, alcohol, etc. to the double bond in advance as a protecting group, and heat after completion of amidation. It is common to remove the protecting group to produce the desired product. This is because the double bond of the (meth) acrylic acid ester is extremely stable.
By containing the hydroxyl group in this way, the sinterability due to the reducing effect is promoted, and the adhesiveness is improved.

Further, the hydroxyl group referred to here is an alcoholic group in which the hydrogen atom of the aliphatic hydrocarbon group is substituted, and if the content of this hydroxyl group is in the range of 1 to 50 in one molecule, it is over-cured. There is no risk of impairing the sinterability.

Examples of the acrylic resin compound having such a hydroxyl group include compounds represented by the following general formulas (I) to (IV).

（式中、Ｒ^１は水素原子又はメチル基を表し、Ｒ^２は炭素数１〜１００の２価の脂肪族炭化水素基又は環状構造を持つ脂肪族炭化水素基を表す。）

(In the formula, R ¹ represents a hydrogen atom or a methyl group, and R ² represents a divalent aliphatic hydrocarbon group having 1 to 100 carbon atoms or an aliphatic hydrocarbon group having a cyclic structure.)

（式中、Ｒ^１及びＲ^２はそれぞれ上記と同じものを表す。）

(In the formula, R ¹ and R ² represent the same as above, respectively.)

（式中、Ｒ^１は上記と同じものを表し、ｎは１〜５０の整数を表す。）

(In the formula, R ¹ represents the same as above, and n represents an integer of 1 to 50.)

（式中、Ｒ^１及びｎはそれぞれ上記と同じものを表す。）

(Wherein, R ¹ and n each represent the same as above.)

As the (meth) acrylate or (meth) acrylamide, the above-mentioned compounds can be used alone or in combination of two or more.
The carbon number of R ^{2 in} the general formulas (I) and (II) is 1 to 100, and may be 1 to 36. The number of carbon atoms in R ² is not likely to inhibit the sintering property by a cured excess in the range of 1-36.

Here, when the (D) thermosetting resin is an acrylic resin, a polymerization initiator is generally used for the polymerization thereof, but the polymerization initiator may be a thermal radical polymerization initiator, which is known. A thermal radical polymerization initiator is used.
Further, as the thermal radical polymerization initiator, one having a decomposition temperature of 40 to 140 ° C. in a rapid heating test (decomposition starting temperature when 1 g of a sample is placed on an electric heating plate and the temperature is raised at 4 ° C./min) is used. You may use it. When the decomposition temperature is 40 ° C. or higher, the storage stability of the conductive paste at room temperature is good, and when it is 140 ° C. or lower, an appropriate curing time can be obtained.

Specific examples of the thermal radical polymerization initiator satisfying such properties include methyl ethyl ketone peroxide, methyl cyclohexanone peroxide, methyl acetoacetate peroxide, acetyl acetone peroxide, 1,1-bis (t-butyl peroxy) 3, and so on. 3,5-trimethylcyclohexane, 1,1-bis (t-hexylperoxy) cyclohexane, 1,1-bis (t-hexylperoxy) 3,3,5-trimethylcyclohexane, 1,1-bis (t-) Butylperoxy) cyclohexane, 2,2-bis (4,5-di-t-butylperoxycyclohexyl) propane, 1,1-bis (t-butylperoxy) cyclododecane, n-butyl-4, 4-bis (t-butylperoxy) valerate, 2,2-bis (t-butylperoxy) butane, 1,1-bis (t-butylperoxy) -2-methylcyclohexane, t-butylhydroperoxide , P-menthan hydroperoxide, 1,1,3,3-tetramethylbutyl hydroperoxide, t-hexyl hydroperoxide, dicumyl peroxide, 2,5-dimethyl-2,5-bis (t-butyl) Peroxy) hexane, α, α'-bis (t-butylperoxy) diisopropylbenzene, t-butylcumyl peroxide, di-t-butyl peroxide, 2,5-dimethyl-2,5-bis (t-) Butyl peroxy) Hexin-3, Isobutyryl peroxide, 3,5,5-trimethylhexanoyl peroxide, Octanoyl peroxide, Lauroyl peroxide, Ceramic acid peroxide, m-tolu oil peroxide, Bencoyl peroxide , Diisopropyl peroxydicarbonate, bis (4-t-butylcyclohexyl) peroxydicarbonate, di-3-methoxybutylperoxydicarbonate, di-2-ethylhexyl peroxydicarbonate, di-sec-butylperoxy Dicarbonate, di (3-methyl-3-methoxybutyl) peroxydicarbonate, di (4-t-butylcyclohexyl) peroxydicarbonate, α, α'-bis (neodecanoyl peroxy) diisopropylbenzene, To Kumilperoxyneodecanoate, 1,1,3,3-tetramethylbutylperoxyneodecanoate, 1-cyclohexyl-1-methylethylperoxyneodecanoate, t- Xylperoxyneodecanoate, t-butylperoxyneodecanoate, t-hexylperoxybivarate, t-butylperoxybivarate, 2,5-dimethyl-2,5-bis (2-ethylhexa) Noylperoxy) hexane, 1,1,3,3-tetramethylbutylperoxy-2-ethylhexanoate, 1-cyclohexyl-1-methylethylperoxy-2-ethylhexanoate, t-hexylper Oxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-butylperoxymaleic acid, t-butylperoxylaurate, t- Butylperoxy-3,5,5-trimethylhexanoate, t-butylperoxyisopropylmonocarbonate, t-butylperoxy-2-ethylhexylmonocarbonate, 2,5-dimethyl-2,5-bis ( Benzoylperoxy) hexane, t-butylperoxyacetate, t-hexylperoxybenzoate, t-butylperoxy-m-toluoil benzoate, t-butylperoxybenzoate, bis (t-butylperoxy) isobutarate, t -Butyl peroxyallyl monocarbonate, 3,3', 4,4'-tetra (t-butylperoxycarbonyl) benzophenone and the like can be mentioned. These can be used alone or in combination of two or more. When two or more types are mixed and used, the curability can be controlled by the type, mixing ratio, and the like. Further, the above-mentioned radically polymerizable acrylic resin can be used in combination with a cyanate resin, an epoxy resin, and a maleimide resin.

This polymerization initiator may be used alone or in combination of two or more in order to control the curability. Further, various polymerization inhibitors can be added in advance in order to improve the storage stability of the die attach paste.

The blending amount of the thermal radical initiator may be 0.1 to 10 parts by mass with respect to 100 parts by mass of the radically polymerizable acrylic resin component.
When it is 0.1 part by mass or more, a die attach paste having good curability can be obtained, and when it is 10 parts by mass or less, storage stability is excellent and good workability can be obtained.

The maleimide resin is a compound containing one or more maleimide groups in one molecule, and is a resin that forms a three-dimensional network structure and is cured by reacting the maleimide groups by heating. For example, N, N'-(4,4'-diphenylmethane) bismaleimide, bis (3-ethyl-5-methyl-4-maleimidephenyl) methane, 2,2-bis [4- (4-maleimidephenoxy) phenyl. ] Bismaleimide resin such as propane can be mentioned.
The maleimide resin is a compound obtained by the reaction of diamine dimerate and maleic anhydride, and a compound obtained by the reaction of a maleimided amino acid such as maleimide acetic acid and maleimide caproic acid with a polyol.
Maleimided amino acids are obtained by reacting maleic anhydride with aminoacetic acid or aminocaproic acid. As the polyol, a polyether polyol, a polyester polyol, a polycarbonate polyol, or a poly (meth) acrylate polyol can be used.
Further, the maleimide resin described above may not contain an aromatic ring.

Since the maleimide group can react with the allyl group, it may be used in combination with the allyl ester resin. The allyl ester resin may be aliphatic.
Further, the allyl ester resin may be a compound obtained by transesterification of cyclohexanediallyl ester and an aliphatic polyol. The number average molecular weight of the allyl ester compound is not particularly limited, but may be 500 to 10,000 or 500 to 8,000. When the number average molecular weight is within the above range, the curing shrinkage can be made particularly small, and the decrease in adhesion can be prevented. It can also be used in combination with cyanate resin, epoxy resin, and acrylic resin.

The maleimide resin is a bismaleimide resin having an aliphatic hydrocarbon group in the main chain, and even if the main chain connecting the two maleimide groups has an aliphatic hydrocarbon group having one or more carbon atoms. Good.
Here, the aliphatic hydrocarbon group may be in any form of linear, branched chain and cyclic, and may have 6 or more carbon atoms, 12 or more carbon atoms, and carbon. The number may be 24 or more. Further, this aliphatic hydrocarbon group may be directly bonded to the maleimide group.

（式中、Ｑは炭素数６以上の２価の直鎖状、分枝鎖状又は環状の脂肪族炭化水素基を示し、Ｐは２価の原子又は有機基であって、Ｏ、ＣＯ、ＣＯＯ、ＣＨ_２、Ｃ（ＣＨ_３）_２、Ｃ（ＣＦ_３）_２、Ｓ、Ｓ_２、ＳＯ及びＳＯ_２から選ばれる２価の原子又は有機基を少なくとも１つ以上含む基であり、ｍは１〜１０の整数を表す。）を用いてもよい。The maleimide resin is, for example, a compound represented by the following general formula (V).

(In the formula, Q represents a divalent linear, branched or cyclic aliphatic hydrocarbon group having 6 or more carbon atoms, P is a divalent atom or organic group, and O, CO, A group containing at least one divalent atom or organic group selected from COO, CH ₂ , C (CH ₃ ) ₂ , C (CF ₃ ) ₂ , S, S ₂ , SO and SO ₂ , where m is. (Representing an integer of 1 to 10) may be used.

Here, the divalent atom represented by P includes O, S and the like, and the divalent organic groups are CO, COO, CH ₂ , C (CH ₃ ) ₂ , C (CF ₃ ) ₂ , and so on. Examples thereof include S ₂ , SO, SO _{2, and the} like, and organic groups containing at least one of these atoms or organic groups. Examples of the organic group containing the above-mentioned atom or organic group include those having a hydrocarbon group having 1 to 3 carbon atoms, a benzene ring, a cyclo ring, a urethane bond, and the like as a structure other than the above, and P in that case. Examples of groups represented by the following chemical formulas can be given.

When a bismaleimide resin having an aliphatic hydrocarbon group in the main chain is used, a thermosetting resin composition for semiconductor bonding having excellent heat resistance and low stress and good heat bonding strength after moisture absorption can be obtained.
Specific examples of such a maleimide resin include BMI-1500 (manufactured by Digigner Moleculars, trade name; molecular weight 1500), BMI-1700 (manufactured by Digigner Moleculars, trade name; molecular weight 1700), and the like. Can be mentioned.

Further, the maleimide resin can be used in combination with an allylated epoxy resin, which is a polymer of allylated bisphenol and epichlorohydrin, or the above-mentioned radically polymerizable acrylic resin containing a hydroxy group.

Here, the allylated epoxy resin, which is a polymer of allylated bisphenol and epichlorohydrin, uses, for example, a polyvalent phenol compound as a solvent for alcohols such as methanol, isopropanol and n-propanol, or ketones such as acetone and methyl ethyl ketone. After dissolution, the allyl ether of the polyvalent phenol compound is obtained by reacting with allyl halide such as allyl chloride and allyl bromide using a base such as sodium hydroxide or potassium hydroxide, and then the allylated polyvalent phenol compound. To obtain by reacting with a mixture of epihalohydrins and allyl metal hydroxides such as sodium hydroxide and potassium hydroxide as a catalyst at 20 to 120 ° C. for 0.5 to 10 hours with batch addition or gradual addition. Can be done.

（式中、Ｒ^３〜Ｒ^１０は、それぞれ独立に水素原子、置換又は無置換のアルキル基及び置換又は無置換のアリル基から選ばれる基であって、そのうちの少なくとも１つは置換又は無置換のアリル基であり、ＸはＳＯ、ＳＯ_２、ＣＨ_２、Ｃ（ＣＨ_３）_２、Ｃ（ＣＦ_３）_２、Ｏ、ＣＯ及びＣＯＯから選ばれる２価の原子又は有機基であり、ｋは０又は１である。）を用いてもよい。The allylated epoxy resin is a compound represented by the following general formula (VI).

(In the formula, R ^{3 to} R ¹⁰ are groups independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group and a substituted or unsubstituted allyl group, and at least one of them is substituted or unsubstituted. X is a divalent atomic or organic group selected from SO, SO ₂ , CH ₂ , C (CH ₃ ) ₂ , C (CF ₃ ) ₂ , O, CO and COO, and k is. 0 or 1) may be used.

When the maleimide resin and the allylated epoxy resin are used in combination, the blending ratio thereof may be 50/50 to 95/5 or 65/35 to 90/10.

When the maleimide resin and the radically polymerizable acrylic resin are used in combination, the blending ratio may be 5/95 to 95/5.

Here, when the (D) thermosetting resin is blended, it is blended so as to be 1 to 20 parts by mass when the total amount of the (A) silver fine particles and (B) silver powder is 100 parts by mass. ..
When the amount of the thermosetting resin (D) is 1 part by mass or more, the workability at the time of applying the paste composition becomes good, and when the amount of the thermosetting resin is 20 parts by mass or less, the paste coarse sinter firing High thermal conductivity after firing can be ensured, and good heat dissipation can be obtained.
Further, when the (D) thermosetting resin is in the above range, deterioration due to light and heat is reduced, so that coloring and strength are not lowered, and the life of the light emitting device can be maintained.
With such a blending range, it is possible to easily prevent contact between silver particles and maintain the mechanical strength of the entire adhesive layer by utilizing the adhesive performance of the acrylic resin.

Further, the paste composition of the present disclosure may contain (E) a solvent. As the solvent (E), a known solvent can be used as long as it functions as a reducing agent. The solvent may be an alcohol, for example, an aliphatic polyhydric alcohol. Examples of the aliphatic polyhydric alcohol include glycols such as ethylene glycol, diethylene glycol, propylene glycol, dipropylene glycol, 1,4-butanediol, glycerin, and polyethylene glycol. These solvents can be used alone or in combination of two or more.

As the solvent (E), the alcohol solvent that functions as a reducing agent increases the reducing power of alcohol by increasing the temperature due to the heat treatment during paste curing (sintering), and is partially present in the silver powder and silver fine particles. Silver oxide and the metal oxide on the metal substrate (eg, copper oxide) are reduced by the alcohol to a pure metal. As a result, it is considered that a cured film having higher density, higher conductivity, and higher adhesion to the substrate is formed. Further, since the alcohol is sandwiched between the semiconductor element and the metal substrate, the alcohol is partially recirculated during the heat treatment during the paste curing, and the alcohol as the solvent is not immediately lost from the system due to vaporization. Therefore, the metal oxide can be reduced more efficiently even at a paste curing temperature equal to or higher than the boiling point of the solvent.

Specifically, the boiling point of the solvent (E) may be 100 to 300 ° C. or 150 to 290 ° C.
When the boiling point is 100 ° C. or higher, the amount of the volatile solvent is reduced, so that the reducing ability of the paste composition is maintained. Therefore, stable adhesive strength can be obtained.
Further, when the boiling point is 300 ° C. or lower, the amount of solvent remaining in the paste after sintering is reduced, and a dense sintered body can be obtained.

The amount of the solvent (E) to be blended may be 7 to 20 parts by mass when the total amount of the (A) silver fine particles and (B) silver powder is 100 parts by mass. When the solvent is contained in an amount of 7 parts by mass or more, the viscosity can be adjusted to have good workability when the paste is applied. When the content of the solvent is 20 parts by mass or less, silver fine particles and silver powder do not settle in the paste composition. When the blending amount of the solvent is in this range, a paste composition having good reliability can be obtained.

In addition to the above components, the paste composition of the present disclosure includes a curing accelerator, a rubber, a low stress agent such as silicone, etc., which are generally blended in this type of composition as long as the action of the present disclosure is not impaired. , Coupling agents, antifoaming agents, surfactants, colorants (pigments, dyes), various polymerization inhibitors, antioxidants, solvents, and various other additives can be blended as needed. Each of these additives may be used alone or in combination of two or more.

Examples of such additives include silane coupling agents such as epoxysilane, mercaptosilane, aminosilane, alkylsilane, cladesilane, vinylsilane, and sulfidesilane, or titanate coupling agents, aluminum coupling agents, and aluminum / zirconium coupling agents. Coupling agents such as, colorants such as carbon black, solid low stress components such as silicone oil and silicone rubber, inorganic ion exchangers such as hydrotalcite, and the like.

The method for producing the paste composition of the present disclosure includes the above-mentioned essential components (A) to (C), optional components (D) and (E) to be blended as necessary, and other coupling agents. Thoroughly mix additives and solvents. Next, the kneading process is performed with a disperse, a kneader, a three-roll mill or the like. Furthermore, it can be prepared by defoaming.

The paste composition of the present disclosure thus obtained is excellent in high thermal conductivity and heat dissipation. Therefore, when it is used as a bonding material for an element or a heat radiating member to a substrate or the like, the heat dissipation inside the apparatus to the outside can be improved and the product characteristics can be stabilized.

Next, the semiconductor device and electrical / electronic components of the present disclosure will be described.
The semiconductor device of the present disclosure is formed by adhering a semiconductor element onto a substrate serving as an element support member by using the above-mentioned paste composition. That is, here, the paste composition is used as a die attach paste, and the semiconductor element and the substrate are adhered and fixed via the paste composition.

Here, the semiconductor element may be any known semiconductor element, and examples thereof include a transistor and a diode. Further, examples of this semiconductor element include a light emitting element such as an LED. The type of light emitting element is not particularly limited, and examples thereof include those in which a nitride semiconductor such as InN, AlN, GaN, InGaN, AlGaN, and InGaAlN is formed as a light emitting layer on a substrate by a MOCVD method or the like. Be done. Examples of the element support member include copper, silver-plated copper, PPF (preplating lead frame), glass epoxy, and ceramics.

In the semiconductor device and the electric / electronic component of the present disclosure, the semiconductor element can be bonded to a base material that has not been metal-plated by using the paste composition described above. The semiconductor device thus obtained has a dramatically improved connection reliability with respect to the temperature cycle after mounting as compared with the conventional one. Further, since the electric resistance value is sufficiently small and the change with time is small, there is an advantage that the output does not decrease with time even when driven for a long time and has a long life.

Further, the electric / electronic component of the present disclosure is formed by adhering a heat radiating member to a heat generating member by using the above-mentioned paste composition. That is, here, the paste composition is used as a material for adhering the heat radiating member, and the heat radiating member and the heat generating member are adhered and fixed via the paste composition.

Here, the heat generating member may be the above-mentioned semiconductor element or a member having the semiconductor element, or may be another heat generating member. Examples of the heat generating member other than the semiconductor element include an optical pickup and a power transistor. Further, examples of the heat radiating member include a heat sink and a heat spreader.

In this way, by adhering the heat radiating member to the heat generating member using the above-mentioned paste composition, the heat generated by the heat radiating member can be efficiently released to the outside by the heat radiating member, and the temperature of the heat generating member can be increased. It can be suppressed. The heat generating member and the heat radiating member may be directly bonded to each other via the paste composition, or may be indirectly bonded by sandwiching another member having high thermal conductivity.

Next, the present disclosure will be described in more detail with reference to Examples, but the present disclosure is not limited to these Examples.

(Examples 1 to 12, Comparative Examples 1 to 4)
In the present disclosure, each component was mixed according to the formulations shown in Tables 1 and 2 and kneaded with a roll to obtain a paste composition. The obtained paste composition was evaluated by the following method. The results are also shown in Tables 1 and 2. As the materials used in Examples and Comparative Examples, the following commercially available products were used.

(A1): Plate-type silver fine particles (manufactured by Toxen Industries, Ltd., trade name: M13; center particle diameter: 2 μm, thickness: 50 nm or less)
(A2): Spherical silver fine particles (manufactured by Mitsuboshi Belting Co., Ltd., trade name: MDot; average particle size: 50 nm)
(B): Silver powder (manufactured by Fukuda Metal Foil Powder Industry Co., Ltd., trade name: AgC-212D; average particle size: 5 μm)
(C1): Sintering aid 1 (glutaric anhydride, manufactured by Wako Pure Chemical Industries, Ltd., melting point; 50 ° C., boiling point; 150 ° C.)
(C2): Sintering aid 2 (succinic anhydride, manufactured by Wako Pure Chemical Industries, Ltd., melting point; 118 ° C., boiling point; 261 ° C.)
(C3): Sintering aid 3 (diglycolic acid anhydride, manufactured by Wako Pure Chemical Industries, Ltd., melting point; 92 ° C., boiling point; 240 ° C.)
(C4): Sintering aid 4 (phthalic anhydride, manufactured by Wako Pure Chemical Industries, Ltd., melting point; 130 ° C., boiling point; 284 ° C.)

(D1): Hydroxyethyl acrylamide (manufactured by Kohjin Co., Ltd., HEAA)
(D2): Imide-extended bismaleimide (manufactured by Digigner Moleculars, trade name: BMI-1500; number average molecular weight 1500)
(D3): Dialyl bisphenol A diglycidyl ether type epoxy resin (manufactured by Nippon Kayaku Co., Ltd., trade name: RE-810NM; epoxy equivalent 223, hydrolyzable chlorine 150 ppm (1N KOH-ethanol, dioxane solvent, reflux 30 minutes))
(D4): 4-Hydroxybutyl acrylate (manufactured by Nihon Kasei Corporation, trade name: 4HBA)
Polymerization initiator: Dicumyl peroxide (manufactured by NOF CORPORATION, trade name: Park Mill D; decomposition temperature in rapid heating test: 126 ° C)
(E): Diethylene glycol (manufactured by Tokyo Chemical Industry Co., Ltd.)

<Evaluation method>
[viscosity]
The viscosity of the paste composition was measured at 25 ° C. and 5 rpm using an E-type viscometer (3 ° cone).
[Pot life]
For the pot life of the paste composition, the number of days until the viscosity of the paste composition when left in a constant temperature bath at 25 ° C. increased to 1.5 times or more the initial viscosity was measured.

[Thermal conductivity]
The thermal conductivity of the paste composition after curing was measured by a laser flash method according to JIS R 1611-1997.
[Electrical resistance]
The test piece was coated with a conductive paste on a glass substrate (thickness 1 mm) so as to have a thickness of 200 μm by a screen printing method, and cured at 200 ° C. for 60 minutes. The electrical resistance of the cured paste composition was measured by the 4-terminal method using the product name "MCP-T600" (manufactured by Mitsubishi Chemical Corporation) for the obtained wiring.

[Adhesive strength during heat]
For the test piece, a backside gold chip provided with a gold-deposited layer on a 4 mm × 4 mm joint surface was mounted on a solid copper frame and a PPF (Ni-Pd / Au plated copper frame) using a paste composition. It was cured at 200 ° C. for 60 minutes. The test piece on which the chip was mounted on the frame was subjected to moisture absorption treatment under the conditions of 85 ° C., relative humidity of 85%, and 72 hours.
The thermal adhesive strength of the paste composition was determined by measuring the thermal die shear strength between the chip and the frame at 260 ° C. using a mount strength measuring device.

[Adhesive strength during heat after high temperature heat treatment]
The test piece was prepared by mounting a back gold chip having a gold-deposited layer on a 4 mm × 4 mm joint surface on a PPF (Ni-Pd / Au plated copper frame) using a paste composition for semiconductors, and at 200 ° C. It cured in 60 minutes.
The hot adhesive strength of the paste composition after high-temperature heat treatment was measured by heat-treating at 250 ° C. for 100 hours and 1000 hours, and then measuring the hot die shear strength at 260 ° C. using a mount strength measuring device.
The thermal adhesive strength of the paste composition after high-temperature heat treatment by cold-heat cycle treatment is 100 cycles and 1000 cycles, with the operation of raising the temperature from -40 ° C to 250 ° C and cooling to -40 ° C as one cycle. After that, the heat die shear strength at 260 ° C. was measured using a mount strength measuring device.

[Cold and thermal impact resistance]
For the test piece, a back gold silicon chip having a gold-deposited layer provided on a 6 mm × 6 mm joint surface was mounted on a copper frame and PPF using a paste composition, and heat-cured at 200 ° C. for 60 seconds on a hot plate. (HP curing) or heat curing (OV curing) at 200 ° C. for 60 minutes was performed using an oven.
For cold and thermal impact resistance, a package molded under the following conditions using an epoxy encapsulant manufactured by Kyocera Corporation (trade name: KE-G3000D) is subjected to moisture absorption treatment at 85 ° C., relative humidity 85%, and 168 hours, and then IR. Reflow treatment (260 ° C., 10 seconds) and thermal cycle treatment (heating from -55 ° C to 150 ° C, and cooling to -55 ° C are defined as one cycle, which is 1000 cycles), and after each treatment, respectively. The number of internal cracks in the package was evaluated by observing with an ultrasonic microscope. As for the evaluation result of cold heat impact resistance, the number of samples in which cracks were generated was displayed for 5 samples.

Test piece and epoxy encapsulant curing conditions ・ Package type: 80pQFP (14mm x 20mm x 2mm thickness)
-Chip outline: Silicon chip and backside gold-plated chip-Lead frame: PPF and copper-Molding with epoxy sealant: 175 ° C, 2 minutes-Post mold cure: 175 ° C, 8 hours

[Energization test]
The test piece is prepared by applying the paste composition to an aluminum oxide substrate for a light emitting device having a concave reflector structure on the side surface by a stamping method, mounting a light emitting element provided with a 600 μm square silver vapor deposition layer, and then mounting the light emitting element at 200 ° C., 60. Heat curing was performed for a minute.
Next, the electrode of the light emitting element and the electrode of the substrate were wired with a gold wire and sealed with a silicone resin (manufactured by Shin-Etsu Chemical Co., Ltd.).
In the energization test, the decrease in reflectance with respect to the initial value after energizing 50 mA for 500 hours, 1000 hours, and 2000 hours at a temperature of 25 ° C. was calculated by the following formula.
Rate of decrease in reflectance with respect to the initial value (%) = (reflectance after t time) ÷ (initial reflectance) x 100

[Void rate]
The void ratio of the paste composition was observed using a microfocus X-ray inspection device (SMX-1000, manufactured by Shimadzu Corporation), and a void ratio of less than 5% was "good" and a void ratio of 5% or more and less than 8% was "possible". , 8% or more was evaluated as "impossible". The void ratio was calculated by observing the solder joint portion from the direction perpendicular to the joint surface with an X-ray transmission device, obtaining the void area and the joint portion area, and calculating by the following formula.
Void rate (%) = Void area ÷ (Void area + Joint area) x 100

[Distortion of chip surface]
For the strain on the chip surface of the paste composition, a back gold chip having a gold-deposited layer provided on a joint surface of 8 mm × 8 mm was mounted on a Mo substrate whose surface was Ni-Pd / Au plated using the paste composition. The package warpage of the semiconductor package produced by curing at 200 ° C. for 60 minutes was measured at room temperature. The measuring device was a shadow moiré measuring device (Thermore AXP: manufactured by Akrometrix), and the measurement was performed according to JEITA ED-7306 of the Japan Electronics and Information Technology Industries Association standard. Specifically, when the virtual plane calculated by the least squares method of all the data on the substrate surface of the measurement area is used as the reference plane, the maximum value in the direction perpendicular to the reference plane is A, and the minimum value is B, | The value of A | + | B | (Coplanarity) was used as the package warp value, and the evaluation was performed as follows.
Good: Less than 5 μm, Possible: 5 μm or more and less than 10 μm, Impossible: 10 μm or more

Based on the above results, the paste composition of the present disclosure has excellent thermal conductivity, excellent low stress property, and adhesive properties by containing a sintering aid containing an acid anhydride structure in addition to the predetermined silver particles. It was found that it was good and had excellent reflow peeling resistance.
Further, the paste composition of the present disclosure has particularly good adhesive strength at the time of heat treatment after high temperature treatment. Therefore, by using this paste composition as a die attach paste for element adhesion or a material for adhering a heat radiating member, a semiconductor device and an electric / electronic device having excellent reliability can be obtained.

Claims (9)

(A) silver fine particles having a thickness or minor axis of 1 to 200 nm, (B) silver powder having an average particle diameter other than (A) silver fine particles of more than 0.2 μm and 30 μm or less, and (C) an acid anhydride structure. Containing, including,
When the total amount of the (A) silver fine particles and the (B) silver powder is 100 parts by mass, the paste composition is characterized in that 0.01 to 1 part by mass of the (C) sintering aid is blended. Stuff. The paste composition according to claim 1, wherein the (A) silver fine particles include (A1) plate-type silver fine particles having a central particle diameter of 0.3 to 15 μm and a thickness of 10 to 200 nm. The paste composition according to claim 1 or 2, wherein the (A) silver fine particles include (A2) spherical silver fine particles having an average particle diameter of 10 to 200 nm. The paste composition according to any one of claims 1 to 3, wherein the silver fine particles (A) are self-sintered at 100 ° C to 250 ° C. The paste composition according to any one of claims 1 to 4, wherein the mass ratio of the (A) silver fine particles to the (B) silver powder is 10:90 to 90:10. The paste composition according to any one of claims 1 to 5, wherein the sintering aid (C) is an acid anhydride having a melting point of 40 to 150 ° C. and a boiling point of 100 to 300 ° C. A semiconductor device comprising a substrate and a semiconductor element adhered to the substrate via a die attach material containing the paste composition according to any one of claims 1 to 6. The semiconductor device according to claim 7, wherein the semiconductor element is a light emitting element. An electric / electronic device comprising a heat-generating member and a heat-dissipating member adhered to the heat-generating member via a heat-dissipating member adhesive material containing the paste composition according to any one of claims 1 to 6. ..