JPWO2018181340A1 - Positive photosensitive resin composition, dry film, cured product, printed wiring board and semiconductor element - Google Patents
Positive photosensitive resin composition, dry film, cured product, printed wiring board and semiconductor element Download PDFInfo
- Publication number
- JPWO2018181340A1 JPWO2018181340A1 JP2019509900A JP2019509900A JPWO2018181340A1 JP WO2018181340 A1 JPWO2018181340 A1 JP WO2018181340A1 JP 2019509900 A JP2019509900 A JP 2019509900A JP 2019509900 A JP2019509900 A JP 2019509900A JP WO2018181340 A1 JPWO2018181340 A1 JP WO2018181340A1
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- Japan
- Prior art keywords
- photosensitive resin
- resin composition
- film
- positive photosensitive
- cured product
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000011342 resin composition Substances 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 11
- 229920002577 polybenzoxazole Polymers 0.000 claims abstract description 36
- 239000003431 cross linking reagent Substances 0.000 claims abstract description 30
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 29
- 239000002243 precursor Substances 0.000 claims abstract description 28
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 21
- -1 methylol groups Chemical group 0.000 claims abstract description 14
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 11
- 239000000203 mixture Substances 0.000 abstract description 16
- 239000010408 film Substances 0.000 description 80
- 238000000576 coating method Methods 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 17
- 125000003118 aryl group Chemical group 0.000 description 17
- 239000000047 product Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 9
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- 125000000962 organic group Chemical group 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 7
- 239000002253 acid Substances 0.000 description 7
- 230000003287 optical effect Effects 0.000 description 7
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical class [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- 230000007261 regionalization Effects 0.000 description 5
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- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 238000013329 compounding Methods 0.000 description 4
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- 239000010419 fine particle Substances 0.000 description 4
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
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- 150000003839 salts Chemical class 0.000 description 3
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- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical compound C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 2
- MSTZGVRUOMBULC-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC(C(C=2C=C(N)C(O)=CC=2)(C(F)(F)F)C(F)(F)F)=C1 MSTZGVRUOMBULC-UHFFFAOYSA-N 0.000 description 2
- WVDRSXGPQWNUBN-UHFFFAOYSA-N 4-(4-carboxyphenoxy)benzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1OC1=CC=C(C(O)=O)C=C1 WVDRSXGPQWNUBN-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000004566 building material Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 125000001153 fluoro group Chemical group F* 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000976 ink Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000006798 ring closing metathesis reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 2
- 238000001291 vacuum drying Methods 0.000 description 2
- NSGXIBWMJZWTPY-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropane Chemical compound FC(F)(F)CC(F)(F)F NSGXIBWMJZWTPY-UHFFFAOYSA-N 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- YJUUZFWMKJBVFJ-UHFFFAOYSA-N 1,3-dimethylimidazolidin-4-one Chemical compound CN1CN(C)C(=O)C1 YJUUZFWMKJBVFJ-UHFFFAOYSA-N 0.000 description 1
- PXGZQGDTEZPERC-UHFFFAOYSA-N 1,4-cyclohexanedicarboxylic acid Chemical compound OC(=O)C1CCC(C(O)=O)CC1 PXGZQGDTEZPERC-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- KZLDGFZCFRXUIB-UHFFFAOYSA-N 2-amino-4-(3-amino-4-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC(C=2C=C(N)C(O)=CC=2)=C1 KZLDGFZCFRXUIB-UHFFFAOYSA-N 0.000 description 1
- KECOIASOKMSRFT-UHFFFAOYSA-N 2-amino-4-(3-amino-4-hydroxyphenyl)sulfonylphenol Chemical compound C1=C(O)C(N)=CC(S(=O)(=O)C=2C=C(N)C(O)=CC=2)=C1 KECOIASOKMSRFT-UHFFFAOYSA-N 0.000 description 1
- UHIDYCYNRPVZCK-UHFFFAOYSA-N 2-amino-4-[2-(3-amino-4-hydroxyphenyl)propan-2-yl]phenol Chemical compound C=1C=C(O)C(N)=CC=1C(C)(C)C1=CC=C(O)C(N)=C1 UHIDYCYNRPVZCK-UHFFFAOYSA-N 0.000 description 1
- ZGDMDBHLKNQPSD-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)phenol Chemical group C1=C(O)C(N)=CC=C1C1=CC=C(N)C(O)=C1 ZGDMDBHLKNQPSD-UHFFFAOYSA-N 0.000 description 1
- KHAFBBNQUOEYHB-UHFFFAOYSA-N 2-amino-5-(4-amino-3-hydroxyphenyl)sulfonylphenol Chemical compound C1=C(O)C(N)=CC=C1S(=O)(=O)C1=CC=C(N)C(O)=C1 KHAFBBNQUOEYHB-UHFFFAOYSA-N 0.000 description 1
- ZDRNVPNSQJRIRN-UHFFFAOYSA-N 2-amino-5-[2-(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]phenol Chemical compound C1=C(O)C(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C(O)=C1 ZDRNVPNSQJRIRN-UHFFFAOYSA-N 0.000 description 1
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- XXXRZGXFFMAJKQ-UHFFFAOYSA-N 4-(1,1,1,3,3,3-hexafluoropropan-2-yl)benzoic acid Chemical compound OC(=O)C1=CC=C(C(C(F)(F)F)C(F)(F)F)C=C1 XXXRZGXFFMAJKQ-UHFFFAOYSA-N 0.000 description 1
- SQJQLYOMPSJVQS-UHFFFAOYSA-N 4-(4-carboxyphenyl)sulfonylbenzoic acid Chemical compound C1=CC(C(=O)O)=CC=C1S(=O)(=O)C1=CC=C(C(O)=O)C=C1 SQJQLYOMPSJVQS-UHFFFAOYSA-N 0.000 description 1
- XKACUVXWRVMXOE-UHFFFAOYSA-N 4-[2-(4-carboxyphenyl)propan-2-yl]benzoic acid Chemical compound C=1C=C(C(O)=O)C=CC=1C(C)(C)C1=CC=C(C(O)=O)C=C1 XKACUVXWRVMXOE-UHFFFAOYSA-N 0.000 description 1
- DFBNFLIESVGWLZ-UHFFFAOYSA-N 4-[5-ethyl-3,4-bis(4-hydroxyphenyl)-2-propan-2-ylphenyl]phenol Chemical compound CC(C)C=1C(C=2C=CC(O)=CC=2)=C(C=2C=CC(O)=CC=2)C(CC)=CC=1C1=CC=C(O)C=C1 DFBNFLIESVGWLZ-UHFFFAOYSA-N 0.000 description 1
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- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical group C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
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- RXOHFPCZGPKIRD-UHFFFAOYSA-N naphthalene-2,6-dicarboxylic acid Chemical compound C1=C(C(O)=O)C=CC2=CC(C(=O)O)=CC=C21 RXOHFPCZGPKIRD-UHFFFAOYSA-N 0.000 description 1
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- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
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- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 125000005409 triarylsulfonium group Chemical group 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
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- C08G73/22—Polybenzoxazoles
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
- G03F7/037—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
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- G03F7/004—Photosensitive materials
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
優れた現像性(解像性および残膜率)を有し、かつ、硬化後のパターン形成性に優れたポジ型感光性樹脂組成物、該組成物から得られる樹脂層を有するドライフィルム、該組成物または該ドライフィルムの樹脂層の硬化物、該硬化物を有するプリント配線板および該硬化物を有する半導体素子を提供する。(A)ポリベンゾオキサゾール前駆体、(B)光酸発生剤、(C)フェノール性水酸基を有する架橋剤、および、(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤を含むことを特徴とするポジ型感光性樹脂組成物等である。A positive photosensitive resin composition having excellent developability (resolution and residual film ratio), and having excellent pattern formability after curing; a dry film having a resin layer obtained from the composition; Provided are a composition or a cured product of a resin layer of the dry film, a printed wiring board having the cured product, and a semiconductor element having the cured product. (A) a polybenzoxazole precursor, (B) a photoacid generator, (C) a crosslinking agent having a phenolic hydroxyl group, and (D) a crosslinking agent having no phenolic hydroxyl group and having two or more methylol groups. And a positive-type photosensitive resin composition.
Description
本発明はポジ型感光性樹脂組成物、ドライフィルム、硬化物、プリント配線板および半導体素子に関する。 The present invention relates to a positive photosensitive resin composition, a dry film, a cured product, a printed wiring board, and a semiconductor device.
アルカリ水溶液で現像可能なポジ型感光性樹脂組成物として、ポリベンゾオキサゾール(PBO)前駆体とナフトキノンジアジド化合物等の光酸発生剤を配合した組成物が用いられている。このような組成物を熱硬化して得られるポリベンゾオキサゾール硬化物は、耐熱性および電気絶縁性に優れることから、電気材料の表面保護膜や層間絶縁膜、例えば、半導体素子のコーティング膜や、フレキシブルプリント配線板材料、耐熱絶縁性層間材への適用が進められている。 As a positive photosensitive resin composition that can be developed with an aqueous alkali solution, a composition in which a polybenzoxazole (PBO) precursor and a photoacid generator such as a naphthoquinonediazide compound are blended is used. A cured product of polybenzoxazole obtained by thermally curing such a composition is excellent in heat resistance and electrical insulation, so that a surface protective film or an interlayer insulating film of an electrical material, for example, a coating film of a semiconductor element, Applications to flexible printed wiring board materials and heat-resistant insulating interlayer materials are being promoted.
このようなポリベンゾオキサゾール前駆体を樹脂成分として含むポジ型感光性樹脂組成物は、ポリベンゾオキサゾール前駆体の分子量が高い場合に、その硬化物は優れた力学特性を得ることができる。しかしながら、その反面、樹脂成分が高分子量体であるために、かかる組成物の塗膜の現像性が低下するという問題があった。
これに対し従来、ポリベンゾオキサゾール前駆体等の高分子量体を樹脂成分として含むポジ型感光性樹脂組成物では、塗膜の現像性を改善するために溶解促進剤を添加することが行われていた(例えば、特許文献1)。
確かに、従来技術によれば溶解促進剤を添加することで塗膜の現像性は改善されるが、パターン形状の制御が難しくなるといった新たな問題があることに、本発明者等は気付いた。
また一方で、塗膜の現像性を改善するために樹脂成分の分子量を低くするという方法が考えられる。しかしながら、この方法では、現像時の残膜率が低下するとともに、硬化後にパターン形状が変形する、矩形度の制御が困難になる等の種々の問題があることに、本発明者等は気付いた。When the positive photosensitive resin composition containing such a polybenzoxazole precursor as a resin component has a high molecular weight of the polybenzoxazole precursor, a cured product thereof can obtain excellent mechanical properties. However, on the other hand, since the resin component is a high molecular weight substance, there is a problem that the developability of a coating film of such a composition is reduced.
On the other hand, conventionally, in a positive photosensitive resin composition containing a high molecular weight substance such as a polybenzoxazole precursor as a resin component, a dissolution promoter is added to improve the developability of a coating film. (Eg, Patent Document 1).
Indeed, the present inventors have noticed that the addition of a dissolution accelerator improves the developability of a coating film according to the prior art, but there is a new problem that it is difficult to control the pattern shape. .
On the other hand, a method of lowering the molecular weight of the resin component to improve the developability of the coating film can be considered. However, the present inventors have noticed that this method has various problems such as a decrease in the residual film ratio during development, deformation of the pattern shape after curing, and difficulty in controlling the rectangularity. .
そこで、本発明の主たる目的は、優れた現像性(解像性および残膜率)を有し、かつ、硬化後のパターン形成性に優れたポジ型感光性樹脂組成物および当該組成物の樹脂層を有するドライフィルムを提供することにある。
また、本発明の他の目的は、プリント配線板や半導体素子等の電子部品に用いて好適な上記組成物または上記ドライフィルムの樹脂層の硬化物を提供することにある。Therefore, a main object of the present invention is to provide a positive photosensitive resin composition having excellent developability (resolution and residual film ratio) and excellent pattern formation after curing, and a resin of the composition. It is to provide a dry film having a layer.
Another object of the present invention is to provide a cured product of the above-mentioned composition or the resin layer of the above-mentioned dry film, which is suitable for use in electronic components such as printed wiring boards and semiconductor elements.
本発明者等は上記に鑑み鋭意検討した結果、特定の2種の化合物を架橋剤として用いることによって、上記課題を解決しうることを見出し、本発明を完成するに至った。 The present inventors have conducted intensive studies in view of the above, and as a result, have found that the above problems can be solved by using two specific compounds as crosslinking agents, and have completed the present invention.
すなわち、本発明のポジ型感光性樹脂組成物は、(A)ポリベンゾオキサゾール前駆体、(B)光酸発生剤、(C)フェノール性水酸基を有する架橋剤、および、(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤を含むことを特徴とするものである。 That is, the positive photosensitive resin composition of the present invention comprises (A) a polybenzoxazole precursor, (B) a photoacid generator, (C) a crosslinking agent having a phenolic hydroxyl group, and (D) a phenolic hydroxyl group. And a cross-linking agent having two or more methylol groups.
本発明のポジ型感光性樹脂組成物は、さらに、シランカップリング剤を含むことが好ましい。 The positive photosensitive resin composition of the present invention preferably further contains a silane coupling agent.
本発明のドライフィルムは、フィルム上に、前記ポジ型感光性樹脂組成物を塗布、乾燥して得られる樹脂層を有することを特徴とするものである。 The dry film of the present invention has a resin layer obtained by applying and drying the positive photosensitive resin composition on a film.
本発明の硬化物は、前記ポジ型感光性樹脂組成物または前記ドライフィルムの樹脂層を、硬化して得られることを特徴とするものである。 The cured product of the present invention is obtained by curing the positive photosensitive resin composition or the resin layer of the dry film.
本発明のプリント配線板は、前記硬化物を有することを特徴とするものである。 A printed wiring board according to the present invention includes the cured product.
本発明の半導体素子は、前記硬化物を有することを特徴とするものである。 A semiconductor device according to the present invention includes the cured product.
本発明によれば、優れた現像性(解像性および残膜率)を有し、かつ、硬化後のパターン形成性に優れたポジ型感光性樹脂組成物を提供することができる。その結果、本発明のポジ型感光性樹脂組成物や該組成物から得られるドライフィルム、該組成物または該ドライフィルムの樹脂層の硬化物は、プリント配線板や半導体素子等の電子部品に好適に用いることができる。 According to the present invention, it is possible to provide a positive photosensitive resin composition having excellent developability (resolution and residual film ratio) and excellent pattern formation after curing. As a result, the positive photosensitive resin composition of the present invention and the dry film obtained from the composition, the cured product of the composition or the resin layer of the dry film are suitable for electronic parts such as printed wiring boards and semiconductor elements. Can be used.
以下、本発明のポジ型感光性樹脂組成物が含有する成分について詳述する。 Hereinafter, the components contained in the positive photosensitive resin composition of the present invention will be described in detail.
[(A)ポリベンゾオキサゾール前駆体]
本発明のポジ型感光性樹脂組成物は、(A)ポリベンゾオキサゾール前駆体を含有する。(A)ポリベンゾオキサゾール前駆体を合成する方法は特に限定されず、公知の方法で合成すればよい。例えば、アミン成分としてジヒドロキシジアミン類と、酸成分としてジカルボン酸ジクロリド等のジカルボン酸のジハライドとを反応させて得ることができる。[(A) Polybenzoxazole precursor]
The positive photosensitive resin composition of the present invention contains (A) a polybenzoxazole precursor. (A) The method for synthesizing the polybenzoxazole precursor is not particularly limited, and may be a known method. For example, it can be obtained by reacting a dihydroxydiamine as an amine component with a dicarboxylic acid dihalide such as dicarboxylic acid dichloride as an acid component.
(A)ポリベンゾオキサゾール前駆体は、下記の繰り返し構造を有するポリヒドロキシアミド酸であることが好ましい。
(式中、Xは4価の有機基を示し、Yは2価の有機基を示す。nは1以上の整数であり、好ましくは10〜50、より好ましくは20〜40である。)(A) The polybenzoxazole precursor is preferably a polyhydroxyamic acid having the following repeating structure.
(In the formula, X represents a tetravalent organic group, and Y represents a divalent organic group. N is an integer of 1 or more, preferably 10 to 50, and more preferably 20 to 40.)
(A)ポリベンゾオキサゾール前駆体を上記の方法で合成する場合、前記一般式(1)中、Xは、前記ジヒドロキシジアミン類の残基であり、Yは、前記ジカルボン酸の残基である。 (A) When the polybenzoxazole precursor is synthesized by the above method, in the general formula (1), X is a residue of the dihydroxydiamine, and Y is a residue of the dicarboxylic acid.
前記ジヒドロキシジアミン類としては、3,3’−ジアミノ−4,4’−ジヒドロキシビフェニル、4,4’−ジアミノ−3,3’−ジヒドロキシビフェニル、ビス(3−アミノ−4−ヒドロキシフェニル)プロパン、ビス(4−アミノ−3−ヒドロキシフェニル)プロパン、ビス(3−アミノ−4−ヒドロキシフェニル)スルホン、ビス(4−アミノ−3−ヒドロキシフェニル)スルホン、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)−1,1,1,3,3,3−ヘキサフルオロプロパン、2,2−ビス(4−アミノ−3−ヒドロキシフェニル)−1,1,1,3,3,3−ヘキサフルオロプロパン等が挙げられる。中でも、2,2−ビス(3−アミノ−4−ヒドロキシフェニル)−1,1,1,3,3,3−ヘキサフルオロプロパンが好ましい。 Examples of the dihydroxydiamines include 3,3′-diamino-4,4′-dihydroxybiphenyl, 4,4′-diamino-3,3′-dihydroxybiphenyl, bis (3-amino-4-hydroxyphenyl) propane, Bis (4-amino-3-hydroxyphenyl) propane, bis (3-amino-4-hydroxyphenyl) sulfone, bis (4-amino-3-hydroxyphenyl) sulfone, 2,2-bis (3-amino-4 -Hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane, 2,2-bis (4-amino-3-hydroxyphenyl) -1,1,1,3,3,3-hexa Fluoropropane and the like. Among them, 2,2-bis (3-amino-4-hydroxyphenyl) -1,1,1,3,3,3-hexafluoropropane is preferred.
前記ジカルボン酸としては、イソフタル酸、テレフタル酸、5−tert−ブチルイソフタル酸、5−ブロモイソフタル酸、5−フルオロイソフタル酸、5−クロロイソフタル酸、2,6−ナフタレンジカルボン酸、4,4’−ジカルボキシビフェニル、4,4’−ジカルボキシジフェニルエーテル、4,4’−ジカルボキシテトラフェニルシラン、ビス(4−カルボキシフェニル)スルホン、2,2−ビス(p−カルボキシフェニル)プロパン、2,2−ビス(4−カルボキシフェニル)−1,1,1,3,3,3−ヘキサフルオロプロパン等の芳香環を有するジカルボン酸、シュウ酸、マロン酸、コハク酸、1,2−シクロブタンジカルボン酸、1,4−シクロヘキサンジカルボン酸、1,3−シクロペンタンジカルボン酸等の脂肪族系ジカルボン酸が挙げられる。中でも、4,4’−ジカルボキシジフェニルエーテルが好ましい。 Examples of the dicarboxylic acid include isophthalic acid, terephthalic acid, 5-tert-butylisophthalic acid, 5-bromoisophthalic acid, 5-fluoroisophthalic acid, 5-chloroisophthalic acid, 2,6-naphthalenedicarboxylic acid, and 4,4 ′. -Dicarboxybiphenyl, 4,4'-dicarboxydiphenyl ether, 4,4'-dicarboxytetraphenylsilane, bis (4-carboxyphenyl) sulfone, 2,2-bis (p-carboxyphenyl) propane, 2,2 Dicarboxylic acid having an aromatic ring such as -bis (4-carboxyphenyl) -1,1,1,3,3,3-hexafluoropropane, oxalic acid, malonic acid, succinic acid, 1,2-cyclobutanedicarboxylic acid, Aliphatic compounds such as 1,4-cyclohexanedicarboxylic acid and 1,3-cyclopentanedicarboxylic acid And a carboxylate. Among them, 4,4'-dicarboxydiphenyl ether is preferred.
前記一般式(1)中、Xが示す4価の有機基は脂肪族基でも芳香族基でもよいが、芳香族基であることが好ましく、2つのヒドロキシ基と2つのアミノ基がオルト位に芳香環上に位置することがより好ましい。前記4価の芳香族基の炭素原子数は、6〜30であることが好ましく、6〜24であることがより好ましい。前記4価の芳香族基の具体例としては下記の基が挙げられるが、これらに限定されるものではなく、ポリベンゾオキサゾール前駆体に含まれうる公知の芳香族基を用途に応じて選択すればよい。 In the general formula (1), the tetravalent organic group represented by X may be an aliphatic group or an aromatic group, but is preferably an aromatic group, and two hydroxy groups and two amino groups are located at ortho positions. More preferably, it is located on an aromatic ring. The tetravalent aromatic group preferably has 6 to 30 carbon atoms, more preferably 6 to 24 carbon atoms. Specific examples of the tetravalent aromatic group include, but are not limited to, the following groups.A known aromatic group that can be included in the polybenzoxazole precursor may be selected according to the application. I just need.
前記4価の芳香族基は、前記芳香族基の中でも下記の基であることが好ましい。
The tetravalent aromatic group is preferably the following group among the aromatic groups.
前記一般式(1)中、Yが示す2価の有機基は脂肪族基でも芳香族基でもよいが、芳香族基であることが好ましく、芳香環上で前記一般式(1)中のカルボニルと結合していることがより好ましい。前記2価の芳香族基の炭素原子数は、6〜30であることが好ましく、6〜24であることがより好ましい。前記2価の芳香族基の具体例としては下記の基が挙げられるが、これらに限定されるものではなく、ポリベンゾオキサゾール前駆体に含まれる公知の芳香族基を用途に応じて選択すればよい。 In the general formula (1), the divalent organic group represented by Y may be either an aliphatic group or an aromatic group, but is preferably an aromatic group. More preferably, it is bonded to The divalent aromatic group preferably has 6 to 30 carbon atoms, and more preferably 6 to 24 carbon atoms. Specific examples of the divalent aromatic group include, but are not limited to, the following groups, provided that a known aromatic group contained in the polybenzoxazole precursor is selected according to the application. Good.
(式中、Aは単結合、−CH2−、−O−、−CO−、−S−、−SO2−、−NHCO−、−C(CF3)2−、−C(CH3)2−からなる群から選択される2価の基を表す。) (In the formula, A is a single bond, -CH 2 -, - O - , - CO -, - S -, - SO 2 -, - NHCO -, - C (CF 3) 2 -, - C (CH 3) 2 - represents a divalent radical selected from the group consisting of).
前記2価の有機基は、前記芳香族基の中でも下記の基であることが好ましい。
The divalent organic group is preferably the following group among the aromatic groups.
(A)ポリベンゾオキサゾール前駆体は、上記のポリヒドロキシアミド酸の繰り返し構造を2種以上含んでいてもよい。また、上記のポリヒドロキシアミド酸の繰り返し構造以外の構造を含んでいてもよく、例えば、ポリアミド酸の繰り返し構造を含んでいてもよい。 (A) The polybenzoxazole precursor may contain two or more kinds of the above-mentioned polyhydroxyamic acid repeating structures. Further, it may include a structure other than the above-mentioned repeating structure of polyhydroxyamic acid, and may include, for example, a repeating structure of polyamic acid.
(A)ポリベンゾオキサゾール前駆体の数平均分子量(Mn)は5,000〜100,000であることが好ましく、8,000〜50,000であることがより好ましい。ここで数平均分子量は、GPCで測定し、標準ポリスチレンで換算した数値である。また、(A)ポリベンゾオキサゾール前駆体の重量平均分子量(Mw)は10,000〜200,000であることが好ましく、16,000〜100,000であることがより好ましい。ここで重量平均分子量は、GPCで測定し、標準ポリスチレンで換算した数値である。Mw/Mnは1〜5であることが好ましく、1〜3であることがより好ましい。 (A) The number average molecular weight (Mn) of the polybenzoxazole precursor is preferably from 5,000 to 100,000, more preferably from 8,000 to 50,000. Here, the number average molecular weight is a value measured by GPC and converted into standard polystyrene. Further, the weight average molecular weight (Mw) of the polybenzoxazole precursor (A) is preferably from 10,000 to 200,000, more preferably from 16,000 to 100,000. Here, the weight average molecular weight is a value measured by GPC and converted into standard polystyrene. Mw / Mn is preferably from 1 to 5, more preferably from 1 to 3.
(A)ポリベンゾオキサゾール前駆体は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。(A)ポリベンゾオキサゾール前駆体の配合量は、組成物固形分全量基準で60〜90質量%であることが好ましい。 As the polybenzoxazole precursor (A), one type may be used alone, or two or more types may be used in combination. (A) The blending amount of the polybenzoxazole precursor is preferably from 60 to 90% by mass based on the total solid content of the composition.
[(B)光酸発生剤]
(B)光酸発生剤としては、ナフトキノンジアジド化合物、ジアリールスルホニウム塩、トリアリールスルホニウム塩、ジアルキルフェナシルスルホニウム塩、ジアリールヨードニウム塩、アリールジアゾニウム塩、芳香族テトラカルボン酸エステル、芳香族スルホン酸エステル、ニトロベンジルエステル、芳香族N−オキシイミドスルフォネート、芳香族スルファミド、ベンゾキノンジアゾスルホン酸エステル等を挙げることができる。(B)光酸発生剤は、溶解阻害剤であることが好ましい。中でもナフトキノンジアジド化合物であることが好ましい。[(B) Photoacid generator]
(B) Photoacid generators include naphthoquinonediazide compounds, diarylsulfonium salts, triarylsulfonium salts, dialkylphenacylsulfonium salts, diaryliodonium salts, aryldiazonium salts, aromatic tetracarboxylic acid esters, aromatic sulfonic acid esters, Examples thereof include nitrobenzyl ester, aromatic N-oxyimidosulfonate, aromatic sulfamide, and benzoquinonediazosulfonic acid ester. (B) The photoacid generator is preferably a dissolution inhibitor. Among them, a naphthoquinonediazide compound is preferred.
ナフトキノンジアジド化合物としては、具体的には例えば、トリス(4−ヒドロキシフェニル)−1−エチル−4−イソプロピルベンゼンのナフトキノンジアジド付加物(例えば、三宝化学研究所社製のTKF−520、TKF−528、TKF−420、TKF−428)や、テトラヒドロキシベンゾフェノンのナフトキノンジアジド付加物(例えば、三宝化学研究所社製のBS550,BS570,BS599)等を使用することができる。ここで、ナフトキノンジアジドの付加は、例えば、o−キノンジアジドスルホニルクロリド類を、ヒドロキシ化合物やアミノ化合物と反応させればよい。 As the naphthoquinonediazide compound, specifically, for example, a naphthoquinonediazide adduct of tris (4-hydroxyphenyl) -1-ethyl-4-isopropylbenzene (for example, TKF-520 and TKF-528 manufactured by Sanbo Chemical Laboratory Co., Ltd.) , TKF-420, TKF-428), and naphthoquinonediazide adduct of tetrahydroxybenzophenone (for example, BS550, BS570, BS599, manufactured by Sanpo Chemical Laboratory). Here, the addition of naphthoquinonediazide may be performed by, for example, reacting o-quinonediazide sulfonyl chlorides with a hydroxy compound or an amino compound.
(B)光酸発生剤は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。(B)光酸発生剤の配合量は、組成物固形分全量基準で3〜20質量%であることが好ましい。 (B) The photoacid generator may be used alone or in combination of two or more. (B) It is preferable that the compounding quantity of a photo-acid generator is 3 to 20 mass% based on the total solid content of the composition.
[(C)フェノール性水酸基を有する架橋剤]
本発明のポジ型感光性樹脂組成物は、架橋剤として(C)フェノール性水酸基を有する架橋剤を含む。(C)フェノール性水酸基を有する架橋剤は特に限定されないが、水酸基(フェノール性水酸基を含む)を2以上有することが好ましく、フェノール性水酸基を2以上有することがより好ましく、下記一般式(2)で表される化合物であることがさらに好ましい。[(C) Crosslinking agent having phenolic hydroxyl group]
The positive photosensitive resin composition of the present invention contains (C) a crosslinking agent having a phenolic hydroxyl group as a crosslinking agent. (C) The crosslinking agent having a phenolic hydroxyl group is not particularly limited, but preferably has two or more hydroxyl groups (including a phenolic hydroxyl group), more preferably has two or more phenolic hydroxyl groups, and has the following general formula (2) Further preferred is a compound represented by the formula:
(一般式(2)中、R1は2〜10価の有機基を示す。R2は、それぞれ独立に、水素原子または炭素数1〜4のアルキル基を示す。nは2〜10の整数を示す。) (In the general formula (2), R 1 represents a divalent to divalent organic group. R 2 each independently represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms. N is an integer of 2 to 10. Is shown.)
前記一般式(2)中、R1は、置換基を有していてもよい炭素数1〜3のアルキレン基であることが好ましい。In the general formula (2), R 1 is preferably an alkylene group having 1 to 3 carbon atoms which may have a substituent.
前記一般式(2)中、R2は、水素原子であることが好ましい。In the general formula (2), R 2 is preferably a hydrogen atom.
前記一般式(2)中、nは、2〜4の整数であることが好ましく、2であることがより好ましい。 In the general formula (2), n is preferably an integer of 2 to 4, and more preferably 2.
また、(C)フェノール性水酸基を有する架橋剤は、フッ素原子を有することが好ましく、トリフルオロメチル基を有することがより好ましい。前記フッ素原子または前記トリフルオロメチル基は、前記一般式(2)中のR1が示す2〜10価の有機基が有することが好ましく、R1はジ(トリフルオロメチル)メチレン基であることが好ましい。また、(C)フェノール性水酸基を有する架橋剤は、ビスフェノール構造を有することが好ましく、ビスフェノールAF構造を有することがより好ましい。Further, (C) the crosslinking agent having a phenolic hydroxyl group preferably has a fluorine atom, and more preferably has a trifluoromethyl group. The fluorine atom or the trifluoromethyl group preferably has a divalent to divalent organic group represented by R 1 in the general formula (2), and R 1 is a di (trifluoromethyl) methylene group Is preferred. Further, (C) the crosslinking agent having a phenolic hydroxyl group preferably has a bisphenol structure, and more preferably has a bisphenol AF structure.
(C)フェノール性水酸基を有する架橋剤の具体例としては下記の化合物であることが好ましい。
The following compounds are preferred as specific examples of the crosslinking agent (C) having a phenolic hydroxyl group.
(C)フェノール性水酸基を有する架橋剤は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。(C)フェノール性水酸基を有する架橋剤の配合量は、組成物固形分全量基準で1〜20質量%であることが好ましく、3〜10質量%であることがより好ましい。このような配合割合にあれば、より優れた現像性を有し、かつ、硬化後のパターン形成性により優れた組成物が得られる。 As the crosslinking agent (C) having a phenolic hydroxyl group, one type may be used alone, or two or more types may be used in combination. (C) The compounding amount of the crosslinking agent having a phenolic hydroxyl group is preferably from 1 to 20% by mass, more preferably from 3 to 10% by mass, based on the total solid content of the composition. With such a mixing ratio, a composition having more excellent developability and more excellent pattern formation after curing can be obtained.
[(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤]
本発明のポジ型感光性樹脂組成物は、架橋剤として(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤を含む。この(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤は、分子量が100以上であることが好ましい。[(D) Crosslinking agent having two or more methylol groups without a phenolic hydroxyl group]
The positive photosensitive resin composition of the present invention contains (D) a crosslinking agent having no phenolic hydroxyl group and having two or more methylol groups as a crosslinking agent. This (D) crosslinking agent having no phenolic hydroxyl group and having two or more methylol groups preferably has a molecular weight of 100 or more.
(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤は、下記一般式(3)で表される化合物であることがさらに好ましい。 (D) The crosslinking agent having no phenolic hydroxyl group and having two or more methylol groups is more preferably a compound represented by the following general formula (3).
(一般式(3)中、nは1〜10の整数を示し、nが1のとき、R3はメチロール基(すなわち「−CH2OH」)を表し、nが2〜10の整数のとき、R3は2〜10価の有機基を示す。R4は、それぞれ独立に、炭素数1〜4の有機基を示す。m1は1〜5の整数を示し、m2は0〜4の整数を示す。) (In the general formula (3), n represents an integer of 1 to 10, when n is 1, R 3 represents a methylol group (that is, “—CH 2 OH”), and when n is an integer of 2 to 10, , R 3 represents a divalent to divalent organic group, R 4 represents each independently an organic group having 1 to 4 carbon atoms, m1 represents an integer of 1 to 5, and m2 represents an integer of 0 to 4. Is shown.)
前記一般式(3)中、nは1であることが好ましい。 In the general formula (3), n is preferably 1.
前記一般式(3)中、R4は、炭素数1〜4のアルキル基であることが好ましく、メチル基であることがより好ましい。In the general formula (3), R 4 is preferably an alkyl group having 1 to 4 carbon atoms, and more preferably a methyl group.
(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤の具体例としては下記の化合物であることが好ましい。
(D) Specific examples of the crosslinking agent having no phenolic hydroxyl group and having two or more methylol groups are preferably the following compounds.
(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。この(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤の配合量は、組成物固形分全量基準で1〜20質量%であることが好ましく、3〜10質量%であることがより好ましい。このような配合割合にあれば、より優れた現像性を有し、かつ、硬化後のパターン形成性により優れた組成物が得られる。
上述した2種の架橋剤は、(C)フェノール性水酸基を有する架橋剤が、溶解促進の機能を有し、(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤が、溶解阻害の機能を有する。このため、より優れた現像性(解像性と残膜率)を得るために、その配合比率は(C):(D)=0.3〜1:1〜0.3であることが好ましく、より好ましくは4:6〜6:4であり、さらに好ましくは(C):(D)=1:1である。As the crosslinking agent (D) having no phenolic hydroxyl group and having two or more methylol groups, one type may be used alone, or two or more types may be used in combination. The amount of the crosslinking agent (D) having no phenolic hydroxyl group and having two or more methylol groups is preferably 1 to 20% by mass, and preferably 3 to 10% by mass, based on the total solid content of the composition. Is more preferable. With such a mixing ratio, a composition having more excellent developability and more excellent pattern formation after curing can be obtained.
As the two types of cross-linking agents described above, (C) a cross-linking agent having a phenolic hydroxyl group has a function of accelerating dissolution, and (D) a cross-linking agent having no phenolic hydroxyl group and having two or more methylol groups, It has the function of dissolution inhibition. Therefore, in order to obtain better developability (resolution and residual film ratio), the compounding ratio is preferably (C) :( D) = 0.3 to 1: 1 to 0.3. , More preferably 4: 6 to 6: 4, and further preferably (C) :( D) = 1: 1.
(シランカップリング剤)
本発明のポジ型感光性樹脂組成物は、シランカップリング剤を含んでもよい。シランカップリング剤を含むことによって、基材との密着性を向上することができる。シランカップリング剤は特に限定されず、例えば、アルコキシ基を有するシランカップリング剤、アミノ基を有するシランカップリング剤、メルカプト基を有するシランカップリング剤、エポキシ基を有するシランカップリング剤、エチレン性不飽和基を有するシランカップリング剤、アリールアミノ基を有するシランカップリング剤などが挙げられる。(Silane coupling agent)
The positive photosensitive resin composition of the present invention may contain a silane coupling agent. By including the silane coupling agent, the adhesion to the substrate can be improved. The silane coupling agent is not particularly limited, for example, a silane coupling agent having an alkoxy group, a silane coupling agent having an amino group, a silane coupling agent having a mercapto group, a silane coupling agent having an epoxy group, an ethylenic Examples thereof include a silane coupling agent having an unsaturated group and a silane coupling agent having an arylamino group.
このようなシランカップリング剤は、1種を単独で用いてもよく、2種以上を組み合わせて用いてもよい。このシランカップリング剤の配合量は、組成物固形分全量基準で1〜15質量%であることが好ましい。1〜15質量%であると基板との密着性を確保しつつ露光部の現像残りを防止することができる。 One of these silane coupling agents may be used alone, or two or more thereof may be used in combination. The amount of the silane coupling agent is preferably 1 to 15% by mass based on the total solid content of the composition. When the content is 1 to 15% by mass, it is possible to prevent the undeveloped portion of the exposed portion while maintaining the adhesion to the substrate.
以下に、本発明のポジ型感光性樹脂組成物に配合可能な他の成分を説明する。 Hereinafter, other components that can be added to the positive photosensitive resin composition of the present invention will be described.
本発明のポジ型感光性樹脂組成物には、溶媒を配合することができる。溶媒としては、(A)ポリベンゾオキサゾール前駆体、(B)光酸発生剤、(C)フェノール性水酸基を有する架橋剤、(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤、および、他の添加剤を溶解させるものであれば特に限定されない。一例としては、N,N’−ジメチルホルムアミド、N−メチルピロリドン、N−エチル−2−ピロリドン、N,N’−ジメチルアセトアミド、ジエチレングリコールジメチルエーテル、シクロペンタノン、γ−ブチロラクトン、α−アセチル−γ−ブチロラクトン、テトラメチル尿素、1,3−ジメチル−2−イミダゾリノン、N−シクロヘキシル−2−ピロリドン、ジメチルスルホキシド、ヘキサメチルホスホルアミド、ピリジン、γ−ブチロラクトン、ジエチレングリコールモノメチルエーテルを挙げることができる。
このような溶媒は、1種を単独で用いてもよく、2種以上を混合して用いてもかまわない。この溶媒の配合量は、塗布膜厚や粘度に応じて、(A)ポリベンゾオキサゾール前駆体100質量部に対し、50〜9000質量部の範囲で用いることができる。The positive photosensitive resin composition of the present invention can contain a solvent. Examples of the solvent include (A) a polybenzoxazole precursor, (B) a photoacid generator, (C) a crosslinking agent having a phenolic hydroxyl group, and (D) crosslinking having no phenolic hydroxyl group and having two or more methylol groups. There is no particular limitation as long as it dissolves the agent and other additives. Examples include N, N′-dimethylformamide, N-methylpyrrolidone, N-ethyl-2-pyrrolidone, N, N′-dimethylacetamide, diethylene glycol dimethyl ether, cyclopentanone, γ-butyrolactone, α-acetyl-γ- Examples include butyrolactone, tetramethylurea, 1,3-dimethyl-2-imidazolinone, N-cyclohexyl-2-pyrrolidone, dimethyl sulfoxide, hexamethylphosphoramide, pyridine, γ-butyrolactone, and diethylene glycol monomethyl ether.
Such a solvent may be used alone or in combination of two or more. The amount of the solvent can be used in the range of 50 to 9000 parts by mass based on 100 parts by mass of the polybenzoxazole precursor (A), depending on the coating film thickness and the viscosity.
本発明のポジ型感光性樹脂組成物には、さらに光感度を向上させるために公知の増感剤を配合することもできる。 A known sensitizer may be added to the positive photosensitive resin composition of the present invention in order to further improve photosensitivity.
また、本発明のポジ型感光性樹脂組成物には、基材との接着性向上のため公知の接着助剤を添加することもできる。 In addition, the positive photosensitive resin composition of the present invention may contain a known adhesion aid for improving the adhesion to the substrate.
本発明のポジ型感光性樹脂組成物に加工特性や各種機能性を付与するために、その他に様々な有機または無機の低分子または高分子化合物を配合してもよい。例えば、界面活性剤、レベリング剤、可塑剤、微粒子等を用いることができる。微粒子には、ポリスチレン、ポリテトラフルオロエチレン等の有機微粒子、コロイダルシリカ、カーボン、層状珪酸塩等の無機微粒子が含まれる。また、本発明のポジ型感光性樹脂組成物に各種着色剤および繊維等を配合してもよい。 In order to impart processing characteristics and various functions to the positive photosensitive resin composition of the present invention, various other organic or inorganic low-molecular or high-molecular compounds may be blended. For example, a surfactant, a leveling agent, a plasticizer, fine particles, and the like can be used. The fine particles include organic fine particles such as polystyrene and polytetrafluoroethylene, and inorganic fine particles such as colloidal silica, carbon, and layered silicate. Further, various colorants, fibers and the like may be added to the positive photosensitive resin composition of the present invention.
[ドライフィルム]
本発明のドライフィルムは、フィルム上に、本発明のポジ型感光性樹脂組成物を塗布、乾燥して得られる樹脂層を有する。本発明のドライフィルムは、樹脂層を、基材に接するようにラミネートして使用される。[Dry film]
The dry film of the present invention has a resin layer obtained by coating and drying the positive photosensitive resin composition of the present invention on the film. The dry film of the present invention is used by laminating a resin layer so as to be in contact with a substrate.
本発明のドライフィルムは、例えば、キャリアフィルムに本発明のポジ型感光性樹脂組成物をブレードコーター、リップコーター、コンマコーター、フィルムコーター等の適宜の方法により均一に塗布し、乾燥して、前記した樹脂層を形成し、好ましくはその上にカバーフィルムを積層することにより、製造することができる。カバーフィルムとキャリアフィルムは同一のフィルム材料であっても、異なるフィルムを用いてもよい。 The dry film of the present invention is, for example, uniformly coated on a carrier film by a suitable method such as a blade coater, a lip coater, a comma coater, a film coater, and the like, and dried on a carrier film. It can be manufactured by forming a cured resin layer, and preferably laminating a cover film thereon. The cover film and the carrier film may be the same film material or different films.
本発明のドライフィルムにおいて、キャリアフィルムおよびカバーフィルムのフィルム材料は、ドライフィルムに用いられるものとして公知のものをいずれも使用することができる。 In the dry film of the present invention, as the film material of the carrier film and the cover film, any of those known as materials used for the dry film can be used.
キャリアフィルムとしては、例えば2〜150μmの厚さのポリエチレンテレフタレート等のポリエステルフィルム等の熱可塑性フィルムが用いられる。 As the carrier film, for example, a thermoplastic film such as a polyester film such as polyethylene terephthalate having a thickness of 2 to 150 μm is used.
カバーフィルムとしては、ポリエチレンフィルム、ポリプロピレンフィルム等を使用することができるが、樹脂層との接着力が、キャリアフィルムよりも小さいものが良い。 As the cover film, a polyethylene film, a polypropylene film, or the like can be used, but a film having an adhesive force to the resin layer smaller than that of the carrier film is preferable.
本発明のドライフィルム上の樹脂層の膜厚は、100μm以下が好ましく、5〜50μmの範囲がより好ましい。 The thickness of the resin layer on the dry film of the present invention is preferably 100 μm or less, more preferably 5 to 50 μm.
本発明のポジ型感光性樹脂組成物を用いて、その硬化物であるパターン膜は、例えば下記のように製造する。 Using the positive photosensitive resin composition of the present invention, a pattern film as a cured product thereof is produced, for example, as follows.
まず、ステップ1として、ポジ型感光性樹脂組成物を基材上に塗布、乾燥する、或いはドライフィルムから樹脂層を基材上に転写することにより塗膜を得る。
ポジ型感光性樹脂組成物を基材上に塗布する方法としては、従来から感光性樹脂組成物の塗布に用いられていた方法、例えば、スピンコーター、バーコーター、ブレードコーター、カーテンコーター、スクリーン印刷機等で塗布する方法、スプレーコーターで噴霧塗布する方法、さらにはインクジェット法等を用いることができる。
塗膜の乾燥方法としては、風乾、オーブンまたはホットプレートによる加熱乾燥、真空乾燥等の方法が用いられる。この塗膜の乾燥は、感光性樹脂組成物中の(A)ポリベンゾオキサゾール前駆体の閉環が起こらないような条件下で行うことが望ましい。具体的には、自然乾燥、送風乾燥、あるいは加熱乾燥を70〜140℃で1〜30分の条件で行うことができる。好ましくは、ホットプレート上で1〜20分乾燥を行う。また、真空乾燥も可能であり、この場合は、室温で20分〜1時間の条件で行うことができる。First, in Step 1, a positive photosensitive resin composition is applied to a substrate and dried, or a resin layer is transferred from the dry film to the substrate to obtain a coating film.
As a method of applying the positive photosensitive resin composition on the substrate, a method conventionally used for applying the photosensitive resin composition, for example, a spin coater, a bar coater, a blade coater, a curtain coater, screen printing For example, a method of applying with a sprayer, a method of spray-coating with a spray coater, and an inkjet method can be used.
As a method for drying the coating film, methods such as air drying, heating drying using an oven or a hot plate, and vacuum drying are used. The drying of the coating film is desirably performed under such conditions that ring closure of the polybenzoxazole precursor (A) in the photosensitive resin composition does not occur. Specifically, natural drying, blast drying, or heat drying can be performed at 70 to 140 ° C. for 1 to 30 minutes. Preferably, drying is performed on a hot plate for 1 to 20 minutes. Vacuum drying is also possible. In this case, the drying can be performed at room temperature for 20 minutes to 1 hour.
基材に特に制限はなく、シリコンウェハー等の半導体基材、配線基板、各種樹脂、金属等に広く適用できる。 The substrate is not particularly limited, and can be widely applied to semiconductor substrates such as silicon wafers, wiring boards, various resins, metals, and the like.
次に、ステップ2として、上記塗膜を、パターンを有するフォトマスクを介して、あるいは、直接露光する。
露光光線は、(B)光酸発生剤を活性化させ、酸を発生させることができる波長のものを用いる。具体的には、露光光線は、最大波長が350〜450nmの範囲にあるものが好ましい。上述したように、適宜増感剤を用いると、光感度を調整することができる。
露光装置としては、コンタクトアライナー、ミラープロジェクション、ステッパー、レーザーダイレクト露光装置等を用いることができる。Next, as a step 2, the coating film is exposed through a photomask having a pattern or directly.
The exposure light having a wavelength capable of activating the photoacid generator (B) and generating an acid is used. Specifically, the exposure light beam preferably has a maximum wavelength in the range of 350 to 450 nm. As described above, the light sensitivity can be adjusted by appropriately using a sensitizer.
As the exposure device, a contact aligner, a mirror projection, a stepper, a laser direct exposure device, or the like can be used.
続いて、ステップ3として、加熱し、未露光部の(A)ポリベンゾオキサゾールの一部を閉環してもよい。
ここで、閉環率は、30%程度である。加熱時間および加熱温度は、(A)ポリベンゾオキサゾール、塗布膜厚、(B)光酸発生剤の種類によって適宜変更する。Subsequently, as Step 3, heating may be performed to close a part of the polybenzoxazole in the unexposed portion (A).
Here, the ring closure rate is about 30%. The heating time and the heating temperature are appropriately changed depending on (A) polybenzoxazole, coating film thickness, and (B) the type of photoacid generator.
次いで、ステップ4として、塗膜を現像液で処理する。
これにより、塗膜中の露光部分を除去して、本発明のポジ型感光性樹脂組成物のパターン膜を形成することができる。
現像に用いる方法としては、従来知られているフォトレジストの現像方法、例えば回転スプレー法、パドル法、超音波処理を伴う浸せき法等の中から任意の方法を選択することができる。
現像液としては、水酸化ナトリウム、炭酸ナトリウム、ケイ酸ナトリウム、アンモニア水等の無機アルカリ類、エチルアミン、ジエチルアミン、トリエチルアミン、トリエタノールアミン等の有機アミン類、テトラメチルアンモニウムヒドロキシド、テトラブチルアンモニウムヒドロキシド等の四級アンモニウム塩類等の水溶液を挙げることができる。また、必要に応じて、これらにメタノール、エタノール、イソプロピルアルコール等の水溶性有機溶媒や界面活性剤を適当量添加してもよい。また、現像液として上記溶媒を使用してもよい。
その後、必要に応じて塗膜をリンス液により洗浄してパターン膜を得る。
リンス液としては、蒸留水、メタノール、エタノール、イソプロピルアルコール等を単独または組み合わせて用いることができる。Next, as step 4, the coating film is treated with a developer.
This makes it possible to form a pattern film of the positive photosensitive resin composition of the present invention by removing the exposed portions in the coating film.
As a method used for development, any method can be selected from conventionally known methods for developing a photoresist, for example, a rotary spray method, a paddle method, an immersion method involving ultrasonic treatment, and the like.
Examples of the developer include inorganic alkalis such as sodium hydroxide, sodium carbonate, sodium silicate, and aqueous ammonia; organic amines such as ethylamine, diethylamine, triethylamine, and triethanolamine; tetramethylammonium hydroxide; and tetrabutylammonium hydroxide. And aqueous solutions of quaternary ammonium salts. If necessary, an appropriate amount of a water-soluble organic solvent such as methanol, ethanol, or isopropyl alcohol or a surfactant may be added to these. Further, the above-mentioned solvent may be used as a developer.
Thereafter, if necessary, the coating film is washed with a rinsing liquid to obtain a pattern film.
As the rinsing liquid, distilled water, methanol, ethanol, isopropyl alcohol and the like can be used alone or in combination.
その後、ステップ5として、パターン膜を加熱して硬化塗膜(硬化物)を得る。
このとき、(A)ポリベンゾオキサゾール前駆体を閉環し、ポリベンゾオキサゾールを得ればよい。
加熱温度は、ポリベンゾオキサゾールのパターン膜を硬化可能なように適宜設定する。例えば、不活性ガス中で、150〜350℃で5〜120分程度の加熱を行う。加熱温度のより好ましい範囲は、200〜320℃である。
この加熱は、例えば、ホットプレート、オーブン、温度プログラムを設定できる昇温式オーブンを用いることにより行う。このときの雰囲気(気体)としては空気を用いてもよく、窒素、アルゴン等の不活性ガスを用いてもよい。Then, as a step 5, the pattern film is heated to obtain a cured coating film (cured product).
At this time, (A) the polybenzoxazole precursor may be closed to obtain polybenzoxazole.
The heating temperature is appropriately set so that the polybenzoxazole pattern film can be cured. For example, heating is performed at 150 to 350 ° C. for about 5 to 120 minutes in an inert gas. A more preferable range of the heating temperature is 200 to 320 ° C.
This heating is performed by using, for example, a hot plate, an oven, and a temperature rising oven in which a temperature program can be set. As the atmosphere (gas) at this time, air may be used, or an inert gas such as nitrogen or argon may be used.
本発明のポジ型感光性樹脂組成物の用途は特に限定されず、例えば、印刷インキ、接着剤、充填剤、電子材料、光回路部品、成形材料、レジスト材料、建築材料、3次元造形、光学部材等、樹脂材料が用いられる公知の種々の分野・製品などが挙げられる。特にポリベンゾオキサゾール膜の耐熱性、寸法安定性、絶縁性等の特性が有効とされる広範な分野・製品、例えば、塗料または印刷インキ、或いは、カラーフィルター、フレキシブルディスプレー用フィルム、半導体素子の被覆膜、電子部品、層間絶縁膜、ソルダーレジストなどのプリント配線板の被覆膜、光回路、光回路部品、反射防止膜、ホログラム、光学部材または建築材料の形成材料として好適に用いられる。 The use of the positive photosensitive resin composition of the present invention is not particularly limited. For example, printing inks, adhesives, fillers, electronic materials, optical circuit parts, molding materials, resist materials, building materials, three-dimensional modeling, optics Various known fields and products in which a resin material is used, such as members, may be used. In particular, a wide range of fields and products in which the properties such as heat resistance, dimensional stability, and insulation properties of the polybenzoxazole film are effective, such as paints or printing inks, color filters, flexible display films, and semiconductor device coatings. It is suitably used as a coating film of a printed wiring board such as a coating film, an electronic component, an interlayer insulating film, and a solder resist, an optical circuit, an optical circuit component, an antireflection film, a hologram, an optical member, or a building material.
特に、本発明のポジ型感光性樹脂組成物は、主にパターン形成材料(レジスト)として用いられ、それによって形成されたパターン膜は、ポリベンゾオキサゾールからなる永久膜として耐熱性や絶縁性を付与する成分として機能し、例えば、カラーフィルター、フレキシブルディスプレー用フィルム、受動部品用絶縁材料、半導体素子の被覆膜、層間絶縁膜、ソルダーレジストやカバーレイ膜などのプリント配線板の被覆膜、ソルダーダム、光回路、光回路部品、反射防止膜、その他の光学部材または電子部材を形成するのに適している。 In particular, the positive photosensitive resin composition of the present invention is mainly used as a pattern forming material (resist), and the pattern film formed thereby imparts heat resistance and insulation as a permanent film made of polybenzoxazole. For example, color filters, flexible display films, insulating materials for passive components, coating films for semiconductor devices, interlayer insulating films, coating films for printed wiring boards such as solder resists and coverlay films, solder dams It is suitable for forming optical circuits, optical circuit components, antireflection films, and other optical or electronic members.
以下、本発明を、実施例を用いてより詳細に説明するが、本発明は下記実施例に限定されるものではない。なお、以下において「部」および「%」とあるのは、特に断りのない限り全て質量基準である。 Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited to the following Examples. In the following, “parts” and “%” are all based on mass unless otherwise specified.
(ポリベンゾオキサゾール(PBO)前駆体の合成)
攪拌機、温度計を備えた0.5リットルのフラスコ中にN−メチルピロリドン212g仕込み、ビス(3−アミノ−4−ヒドロキシアミドフェニル)ヘキサフルオロプロパン17.55g(47.93mmol)を撹拌溶解した。その後、フラスコを氷浴に浸し、フラスコ内を0〜5℃に保ちながら、4,4−ジフェニルエーテルジカルボン酸クロリド15.00g(50.83mmol)を固体のまま5gずつ30分間かけて加え、氷浴中で30分間撹拌した。その後、室温で5時間撹拌を続けた。撹拌した溶液を1Lのイオン交換水(比抵抗値18.2MΩ・cm)に投入し、析出物を回収した。その後、得られた固体をアセトン420mLに溶解させ、1Lのイオン交換水に投入した。析出した個体を回収後、減圧乾燥してカルボキシル基末端の下記の繰り返し構造を有するポリベンゾオキサゾール(PBO)前駆体A−1を得た。ポリベンゾオキサゾール前駆体A−1の数平均分子量(Mn)は17,300、重量平均分子量(Mw)は42,100、Mw/Mnは2.45であった。(Synthesis of polybenzoxazole (PBO) precursor)
In a 0.5-liter flask equipped with a stirrer and a thermometer, 212 g of N-methylpyrrolidone was charged, and 17.55 g (47.93 mmol) of bis (3-amino-4-hydroxyamidophenyl) hexafluoropropane was stirred and dissolved. Thereafter, the flask was immersed in an ice bath, and while keeping the inside of the flask at 0 to 5 ° C., 15.00 g (50.83 mmol) of 4,4-diphenyletherdicarboxylic acid chloride was added as a solid in 5 g portions over 30 minutes. For 30 minutes. Thereafter, stirring was continued at room temperature for 5 hours. The stirred solution was poured into 1 L of ion-exchanged water (specific resistance value: 18.2 MΩ · cm) to collect a precipitate. Thereafter, the obtained solid was dissolved in 420 mL of acetone, and poured into 1 L of ion-exchanged water. The precipitated solid was collected and dried under reduced pressure to obtain a polybenzoxazole (PBO) precursor A-1 having a carboxyl group terminal having the following repeating structure. The number average molecular weight (Mn) of the polybenzoxazole precursor A-1 was 17,300, the weight average molecular weight (Mw) was 42,100, and Mw / Mn was 2.45.
(実施例1〜7、比較例1〜3)
上記で合成したベンゾオキサゾール前駆体(A−1)100質量部に対して、ナフトキノンジアジド(DNQ)化合物(B−1)10質量部と下記表1に記載の架橋剤、シランカップリング剤(E−1)7質量部を配合した後、ベンゾオキサゾール前駆体が30質量%になるようにN−メチルピロリドン(NMP)を加えてワニスとし、スピンコーターを用いてシリコン基板上に塗布した。ホットプレートで120℃3分乾燥させ、感光性樹脂組成物の乾燥膜を得た。得られた乾燥塗膜に高圧水銀ランプを用い1〜30μmまでのパターンが刻まれたマスクを介して300mJ/cm2のブロード光を照射した。露光後2.38%テトラメチルアンモニウムヒドロキシド(TMAH)水溶液にて60秒現像し、水でリンスし、ポジ型パターンを得た。
(B−1)、(C−1)、(C−2)、(C−3)、(D−1)、(D−2)、(D−3)、(E−1)は下記の化合物である。(Examples 1 to 7, Comparative Examples 1 to 3)
Based on 100 parts by mass of the benzoxazole precursor (A-1) synthesized above, 10 parts by mass of a naphthoquinonediazide (DNQ) compound (B-1), a crosslinking agent shown in Table 1 below, and a silane coupling agent (E -1) After mixing 7 parts by mass, N-methylpyrrolidone (NMP) was added so that the benzoxazole precursor became 30% by mass to form a varnish, which was applied on a silicon substrate using a spin coater. It was dried on a hot plate at 120 ° C. for 3 minutes to obtain a dried film of the photosensitive resin composition. The obtained dried coating film was irradiated with 300 mJ / cm 2 broad light using a high-pressure mercury lamp through a mask having a pattern of 1 to 30 μm. After exposure, the resist film was developed with a 2.38% aqueous solution of tetramethylammonium hydroxide (TMAH) for 60 seconds and rinsed with water to obtain a positive pattern.
(B-1), (C-1), (C-2), (C-3), (D-1), (D-2), (D-3) and (E-1) are as follows. Compound.
(B−1)
(B-1)
(C−1) (C−2)
(C−3)
(C-1) (C-2)
(C-3)
(D−1) (D−2)
(D−3)
(D-1) (D-2)
(D-3)
(E−1)
(E-1)
(未露光部残膜率の評価)
現像後の感光膜において膜厚を測定し、現像前の膜厚との比をとることで未露光部残膜率をそれぞれ求めた。
(Evaluation of unexposed portion residual film ratio)
The film thickness of the photosensitive film after development was measured, and the ratio to the film thickness before development was determined to determine the unexposed portion residual film ratio.
(解像度の評価)
現像後パターンを電子顕微鏡(SEM“JSM−6010”)で観察し露光部をスカムなくパターニングできる最少パターンの大きさを解像度(L(μm)/S(μm))とした。(Evaluation of resolution)
After development, the pattern was observed with an electron microscope (SEM “JSM-6010”), and the minimum pattern size that allowed patterning of the exposed portion without scum was defined as resolution (L (μm) / S (μm)).
(硬化後のパターン形成性)
ポジ型パターンに対し、150℃で30分/320℃で1時間の熱処理を施して硬化させた後、電子顕微鏡(SEM“JSM−6010”)でパターン形状を観察し、以下の基準で評価した。
○:パターン形状が矩形もしくは矩形に近い形状であった場合
×:パターン形状が角が無く円形に近い形状であった場合(Pattern formation after curing)
The positive type pattern was subjected to a heat treatment at 150 ° C. for 30 minutes / 320 ° C. for 1 hour and cured, then the pattern shape was observed with an electron microscope (SEM “JSM-6010”) and evaluated according to the following criteria. .
:: When the pattern shape is a rectangle or a shape close to a rectangle X: When the pattern shape is a shape close to a circle with no corners
表1に示す結果から、前記の特定の2種の架橋剤を含有する本発明のポジ型感光性樹脂組成物は、解像性および残膜率に優れ、かつ、優れた形状のポジ型パターンを形成可能であることがわかる。特に実施例1の(C−1)と(D−1)の配合比率を1:1としたものが、未露光部残膜率、解像度およびパターン形状に関する評価結果のバランスが最も優れることがわかる。 From the results shown in Table 1, the positive photosensitive resin composition of the present invention containing the above two specific crosslinking agents is excellent in resolution and residual film ratio, and has a positive pattern having an excellent shape. It can be seen that can be formed. In particular, it can be seen that the case where the compounding ratio of (C-1) and (D-1) in Example 1 is 1: 1 has the best balance of the evaluation results regarding the unexposed portion residual film ratio, resolution and pattern shape. .
Claims (6)
(B)光酸発生剤、
(C)フェノール性水酸基を有する架橋剤、および、
(D)フェノール性水酸基を有さずメチロール基を2つ以上有する架橋剤
を含むことを特徴とするポジ型感光性樹脂組成物。(A) a polybenzoxazole precursor,
(B) a photoacid generator,
(C) a crosslinking agent having a phenolic hydroxyl group, and
(D) A positive photosensitive resin composition comprising a crosslinking agent having no phenolic hydroxyl group and having two or more methylol groups.
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