JPWO2018003002A1 - Active gas generating apparatus and film forming apparatus - Google Patents

Abstract

  An object of the present invention is to provide an active gas generation device that can eject active gas with high uniformity. And regarding the dielectric electrode (21) of the present invention, the gas formed in a two-row configuration along the X direction as a plurality of three or more gas ejection holes along the X direction in the central region (R51). The ejection holes (31) to (37) and the gas ejection holes (41) to (47) are provided. And the difference of the X direction is provided in the formation position of the gas ejection hole 31 and the gas ejection hole 41, and thereby the gas ejection holes (31) to (37) and the gas ejection holes (41) to (47) of the two-row configuration are provided. ), Gas ejection holes (3i) and gas ejection holes (4i) are alternately arranged along the X direction.

Description

  The present invention relates to an active gas generating device in which a high voltage dielectric electrode and a grounded dielectric electrode are installed in parallel, a high voltage is applied between both electrodes, and an active gas is obtained with energy generated by discharge.

  In a conventional active gas generation apparatus, there is an apparatus in which a metal electrode such as an Au film is formed on a dielectric electrode such as a ceramic to form an electrode component. In such an apparatus, the dielectric electrode is the main in the electrode component, and the metal electrode formed there is a subordinate.

  As one of the conventional active gas generators, each uses a disk-shaped electrode configuration part in which a disk-shaped high-voltage dielectric electrode and a grounded dielectric electrode are installed in parallel. The material gas that has entered the structure passes through the discharge space (discharge field) and is ejected outward from a gas ejection hole provided only in the center of the electrode.

  If there is a single gas injection hole, it is considered that all the supplied raw material gas can receive energy through the discharge space for the same time. However, when multiple gas injection holes are used, the electrode shape can be devised. Countermeasures are required.

  When the active gas is generated by applying energy to the raw material gas using dielectric barrier discharge (silent discharge or creeping discharge), it is desirable that the raw material gas has a constant residence time in the discharge space. The reason for this is that if the source gas becomes uneven in the residence time in the discharge space, the amount and concentration of the active gas will differ, so that when the active gas is supplied to the processing target substrate such as a wafer to be deposited, This is because the film result may not be constant.

  Therefore, at present, a disk-like electrode structure or a cylindrical electrode structure is used when there is one gas ejection hole, and the residence time of the source gas in the discharge space is made constant.

  FIG. 9 is an explanatory view schematically showing a basic configuration of a conventional active gas generator employing a disk-shaped electrode structure. FIG. 2A is a diagram showing an outline viewed obliquely downward from above, and FIG. 2B is a sectional view showing a sectional structure. FIG. 10 is an explanatory view showing the gas ejection hole 9 shown in FIG. 9 and its surroundings in an enlarged manner. 9 and 10 show an XYZ orthogonal coordinate system as appropriate.

  As shown in these drawings, the basic configuration is a high voltage side electrode configuration portion 1X and a ground side electrode configuration portion 2X provided below the high voltage side electrode configuration portion 1X. The high-voltage side electrode constituting unit 1X is configured by a dielectric electrode 11X and a metal electrode 10X having a donut shape in plan view having a space in the center provided on the upper surface of the dielectric electrode 11X. The ground-side electrode constituting section 2X includes a dielectric electrode 21X and a planar doughnut-shaped metal electrode 20X that is provided on the lower surface of the dielectric electrode 21X and has a space in the center.

  One gas ejection hole 9 is provided at the center of the center of the dielectric electrode 21X (a region where the metal electrodes 20X and 10X do not overlap in plan view). Note that an AC voltage is applied to the high-voltage side electrode configuration unit 1X and the ground-side electrode configuration unit 2X by a high-frequency power source (not shown).

  A region where the metal electrodes 10X and 20X overlap in plan view is defined as a discharge space DSX (discharge field) in a dielectric space where the dielectric electrodes 11X and 21X face each other by application of an AC voltage from a high frequency power supply.

  In such a configuration, by applying an alternating voltage, a discharge space DSX is formed between the high-voltage side electrode component 1X and the ground-side electrode component 2X, and the source gas is supplied along the gas flow 8 in the discharge space DSX. When supplied, an active gas such as radicalized nitrogen atoms can be obtained, and can be ejected downward (−Z direction) from the gas ejection hole 9 provided at the center of the dielectric electrode 21X.

  Therefore, as shown in FIG. 10, in the conventional active gas generation apparatus adopting the disk-shaped electrode structure, the gas flow 8 in the discharge space can be made constant regardless of the supply direction.

  FIG. 11 is an explanatory view schematically showing a basic configuration of a conventional active gas generator employing a cylindrical electrode structure. FIG. 4A is a diagram showing a side structure, and FIG. 4B is a diagram showing a surface structure. Note that FIG. 11 shows an XYZ orthogonal coordinate system as appropriate.

  As shown in these figures, the basic configuration is a high voltage side electrode configuration portion 1Y and a ground side electrode configuration portion 2Y provided inside the high voltage side electrode configuration portion 1Y.

  The ground-side electrode constituting portion 2Y is provided at the center of a circle on the XZ plane of the high-voltage side electrode constituting portion 1Y, and the outer periphery of the rod-shaped metal electrode 20Y and the metal electrode 20Y having a circular cross-sectional structure on the XZ plane. The dielectric electrode 21Y is formed to cover the dielectric electrode 21Y. The high-voltage side electrode constituting portion 1Y is composed of a hollow cylindrical dielectric electrode 11Y having a space inside and a circular sectional structure, and a metal electrode 10Y formed so as to cover the outer periphery of the dielectric electrode 11Y. The

  A discharge space DSY is provided in a hollow area provided between the dielectric electrode 11Y and the dielectric electrode 21Y. In addition, an AC voltage is applied to the high-voltage side electrode component 1Y and the ground-side electrode component 2Y by a high-frequency power source (not shown).

  The space between the inner peripheral region of the metal electrode 10Y and the outer peripheral region of the metal electrode 20Y is a discharge space DSY in the dielectric space where the dielectric electrodes 11Y and 21Y face each other by application of an AC voltage from the high frequency power source. Is defined as

  In such a configuration, the discharge space DSY is formed between the high-voltage side electrode constituent portion 1Y and the ground-side electrode constituent portion 2Y by application of an alternating voltage, and the height direction of the cylinder in the discharge space DSY from one end portion When source gas 6 having gas flow 8 along (Y direction) is supplied, active gas 7 such as radicalized nitrogen atoms can be obtained, and active gas 7 can be ejected to the outside from the other end. .

  Therefore, as shown in FIG. 11, in the conventional active gas generation apparatus adopting the cylindrical electrode structure, the gas flow 8 in the discharge space can be made constant regardless of the supply direction.

  As an active gas generation apparatus that employs the disk-shaped electrode structure shown in FIGS. 9 and 10, for example, there is a plasma processing apparatus disclosed in Patent Document 1. Further, as an active gas generation apparatus different from the above-described method, an atmospheric pressure plasma processing apparatus that generates an active gas using atmospheric pressure plasma and performs film formation is disclosed in Patent Document 2, for example.

JP 2011-154773 A Japanese Patent Laying-Open No. 2015-5780

  The substrate to be processed is placed directly under the active gas generator so that the active gas obtained by activating the source gas can be quickly supplied to the film formation target, and the film is formed by injecting the active gas over a relatively wide area. Consider the case. In this case, it is preferable to provide a plurality of gas ejection holes in advance and supply the active gas from the plurality of gas ejection holes, rather than branching and supplying the gas ejection holes just before the substrate to be processed. In the case of a type in which the active gas transport distance can be shortened and the active gas attenuates, it can be expected that a higher concentration of the active gas is supplied to the substrate to be processed.

  However, when trying to increase the number of gas ejection holes, the conventional active gas generator employing a cylindrical electrode structure has a basic structure with one gas ejection hole (a space communicating with the discharge space DSY) (FIG. 11). It is practically impossible to provide a plurality of gas ejection holes.

  On the other hand, a conventional active gas generation device that employs a disk-shaped electrode structure can have a plurality of gas ejection holes.

  FIG. 12 is an explanatory view schematically showing a basic configuration of an active gas generation apparatus adopting a disk-like electrode structure having two gas ejection holes, specifically showing an outline viewed obliquely downward from above. It is. FIG. 13 is an explanatory view showing the gas ejection holes shown in FIG. 12 and the periphery thereof in an enlarged manner. 12 and 13 show an XYZ orthogonal coordinate system as appropriate.

  As shown in the figure, a high voltage side electrode configuration unit 102 and a ground side electrode configuration unit 202 provided below the high voltage side electrode configuration unit 102 are basically configured. The high-voltage side electrode constituting unit 102 is configured by a dielectric electrode 13 and a metal electrode 12 having a donut shape in plan view having a space in the center provided on the upper surface of the dielectric electrode 13. The ground-side electrode constituting section 202 is configured by the dielectric electrode 23 and the metal electrode 22 having a donut shape in plan view having a space in the center provided on the lower surface of the dielectric electrode 23.

  Two gas ejection holes 91 and 92 are provided along the X direction in the central portion of the dielectric electrode 23 (a region where the metal electrodes 22 and 12 do not overlap in plan view).

  A region where the metal electrodes 12 and 22 overlap in plan view is defined as a discharge space in a dielectric space where the dielectric electrodes 13 and 23 face each other by application of an AC voltage from a high-frequency power source.

  In such a configuration, a discharge space is formed between the high-voltage side electrode component 102 and the ground-side electrode component 202 by application of an alternating voltage, and the source gas 6 is supplied along the gas flow 8 in this discharge space. Then, an active gas such as radicalized nitrogen atoms can be obtained and ejected from the gas ejection hole 91 or the gas ejection hole 92 provided in the central portion of the dielectric electrode 23 to the outside below.

  Therefore, as shown in FIG. 13, the conventional active gas generator employing the disc-shaped electrode structure has the gas flow 8 in the discharge space in the supply direction even when it has two gas ejection holes 91 and 92. It can be made constant regardless.

  However, when three or more gas ejection holes are provided in one row, for example, when three gas ejection holes are provided, the gas between the two gas ejection holes at both ends and the one gas ejection hole at the center There is a problem in that it is difficult to keep the flow 8 of the current flow constant.

  Therefore, the technique disclosed in Patent Document 1 also provides a plurality of gas ejection holes because three or more gas ejection holes are provided in the disc-shaped electrode structure when generating radicals by dielectric barrier discharge. In the meantime, there is a high possibility that there is a difference between the flow rate of the flowing gas, the amount of radicals generated, and the concentration, and the active gas cannot be supplied uniformly.

  In addition, since the technology disclosed in Patent Document 2 generates plasma near the substrate to be processed, a substance reacts in the vicinity of the substrate to be processed to form a high-quality film. Since the environment is directly affected, there is a problem that the substrate to be processed is likely to be damaged by plasma.

  An object of the present invention is to solve the above problems and to provide an active gas generation device capable of ejecting highly uniform active gas without damaging the substrate to be processed.

  The active gas generation device according to the present invention is an active gas generation device that generates an active gas obtained by activating a source gas supplied to a discharge space, and includes a first electrode component and the first electrode component. A second electrode component provided below the first electrode component, wherein an AC voltage is applied to the first and second electrode components, and the application of the AC voltage causes the first and second electrode components to be connected to each other. The discharge space is formed, and the first electrode component includes a first dielectric electrode and a first metal electrode selectively formed on an upper surface of the first dielectric electrode. The second electrode component includes a second dielectric electrode and a second metal electrode selectively formed on the lower surface of the second dielectric electrode, and the application of the AC voltage In the dielectric space where the first and second dielectric electrodes face each other, the first and second dielectric electrodes An area where the two metal electrodes overlap in plan view is defined as the discharge space, and the second metal electrode is formed to face each other across the central area of the second dielectric electrode in plan view. A pair of second partial metal electrodes, wherein the pair of second partial metal electrodes has a first direction as an electrode formation direction and a second direction intersecting the first direction as a direction facing each other; The first metal electrode has a pair of first partial metal electrodes having a region overlapping with the pair of second partial metal electrodes in plan view, and the second dielectric electrode includes: A plurality of gas ejection holes formed in the central region for ejecting the active gas to the outside, and projecting upward at both ends in the first direction across the plurality of gas ejection holes. A pair of end region step portions formed along the second direction. The pair of end region step portions are formed so as to extend in the second direction to a position exceeding at least a position where the pair of second partial metal electrodes are formed in plan view, and the plurality of gas ejection holes include: Three or more first number of first ejection holes formed at first intervals along the first direction, and the second number with respect to the first number of first ejection holes. Three or more second ejection holes that are arranged at predetermined intervals in the first direction and are formed at second intervals along the first direction. The first ejection holes of the number and the second ejection holes of the second number are formed so that the first ejection holes and the second ejection holes are alternately arranged along the first direction. It is characterized by being.

  The active gas generation device according to claim 1 of the present invention has the above-described characteristics, so that the distance between the first ejection hole and the second ejection hole that are closest to each other along the first direction. Becomes a substantial active gas ejection pitch along the first direction. As a result, a highly uniform active gas can be ejected by ejecting a plurality of active gases from a plurality of ejection holes having an active gas ejection pitch shorter than the first interval and the second interval.

  Further, since the active gas itself is generated in the discharge space between the first and second electrode components, the substrate to be processed is not damaged when the active gas is generated.

  Further, in the present invention described in claim 1, due to the presence of the pair of end region step portions, the inflow of the source gas from the both ends in the first direction of the second dielectric electrode to the discharge space is restricted. For this reason, the source gas supply path of the same conditions can be set between a plurality of gas ejection holes, and active gas with high uniformity can be ejected.

  The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

It is explanatory drawing which shows typically the basic composition of the active gas production | generation apparatus which is Embodiment 1 of this invention. It is explanatory drawing which expands and shows the several gas ejection hole shown in FIG. 1, and its periphery. FIG. 3 is an explanatory diagram schematically showing a connection relationship between a high-voltage side electrode constituent unit and a ground-side electrode constituent unit and a high-frequency power source in the first embodiment. FIG. 3 is a perspective view schematically showing an external configuration of an electrode group constituent part including a high voltage side electrode constituent part and a ground side electrode constituent part according to the first embodiment. It is explanatory drawing which shows typically the basic composition of the active gas production | generation apparatus which is Embodiment 2 of this invention. It is explanatory drawing which expands and shows the some gas ejection hole shown in FIG. 5, and its periphery. It is explanatory drawing which shows typically the cross-section of the film-forming processing apparatus using the active gas production | generation apparatus of Embodiment 2. FIG. It is explanatory drawing which shows typically the connection relation of the high voltage side electrode structure part in a 1st aspect, a ground side electrode structure part, and the high frequency power supply 5. FIG. It is explanatory drawing which shows typically the basic composition of the conventional active gas production | generation apparatus which employ | adopted the disk-shaped electrode structure. It is explanatory drawing which expands and shows the gas ejection hole 9 shown in FIG. 9, and its periphery. It is explanatory drawing which shows typically the basic composition of the conventional active gas production | generation apparatus which employ | adopted the cylindrical electrode structure. It is explanatory drawing which shows typically the basic composition of the active gas production | generation apparatus which employ | adopted the disk shaped electrode structure which has two gas ejection holes. It is explanatory drawing which expands and shows the gas ejection hole shown in FIG. 12, and its periphery. It is explanatory drawing which shows typically the basic composition of the active gas production | generation apparatus which employ | adopted the disk shaped electrode structure which has a 3 or more some gas ejection hole. It is explanatory drawing which expands and shows the some gas ejection hole shown in FIG. 14, and its periphery. It is explanatory drawing which shows typically the basic composition of the active gas production | generation apparatus which employ | adopted the rectangular electrode structure which has a 3 or more several gas ejection hole. It is explanatory drawing which expands and shows the several gas ejection hole shown in FIG. 16, and its periphery.

<Prerequisite technology>
FIG. 14 is an explanatory view schematically showing a basic configuration of an active gas generation apparatus which is a prerequisite technology that employs a disk-shaped electrode structure having three or more gas ejection holes. In the same figure, the figure which shows the outline seen diagonally downward from the upper part is shown. FIG. 15 is an explanatory diagram showing an enlarged view of the plurality of gas ejection holes shown in FIG. 14 and the periphery thereof. 14 and 15 show the XYZ orthogonal coordinate system as appropriate.

  As shown in these drawings, the basic configuration is a high voltage side electrode configuration section 103 and a ground side electrode configuration section 203 provided below the high voltage side electrode configuration section 103. The high-voltage side electrode constituting unit 103 includes a dielectric electrode 15 and a metal electrode 14 provided on the upper surface of the dielectric electrode 15 and having a circular shape or an elliptical shape with the X direction as the major axis direction at the center. Composed. The ground side electrode constituting section 203 is constituted by a dielectric electrode 25 and a metal electrode 24 provided on the lower surface of the dielectric electrode 25 and having a circular shape or an elliptical space with the X direction as the major axis direction at the center. Is done.

  Then, seven gas ejection holes 91 to 97 are provided in a line shape along the X direction in the central portion of the dielectric electrode 25 (a region where the metal electrodes 24 and 14 do not overlap in plan view).

  A region where the metal electrodes 14 and 24 overlap in plan view is defined as a discharge space in a dielectric space where the dielectric electrodes 15 and 25 face each other by application of an AC voltage from a high frequency power supply.

  In such a configuration, by applying an alternating voltage, a discharge space is formed between the high-voltage side electrode constituting portion 103 and the ground side electrode constituting portion 203, and the source gas 6 is supplied along the gas flow 8 in this discharge space. Then, an active gas such as a radicalized nitrogen atom can be obtained and ejected from the gas ejection holes 91 to 97 provided in the central portion of the dielectric electrode 25 to the outside (−Z direction).

  However, as shown in FIG. 15, the active gas generator having the structure shown in FIG. 14 is abbreviated as gas jet holes 91 and 97 at both ends (hereinafter, “both gas jet holes”) among the gas jet holes 91 to 97. And gas ejection holes 92 to 96 (hereinafter sometimes abbreviated as “central gas ejection holes”) between them, there is a high possibility of unevenness in the gas flow rate and the energy received by the gas.

  Specifically, the gas ejection holes 91 and 97 have a gas flow 8 from the X direction in addition to the Y direction, but the gas ejection holes 92 to 96 are limited to the gas flow 8 from the Y direction.

  As described above, when the disk-shaped (elliptical disk-shaped) electrode structure is adopted, if the number of gas ejection holes is three or more, the gas flow is constant between the gas ejection holes at both ends and the central gas ejection hole. It has a problem that it is difficult to do.

  In order to solve the above problems, it is conceivable to adopt a rectangular electrode structure instead of a circular planar structure like a disk.

  FIG. 16 is an explanatory view schematically showing a basic configuration of an active gas generation apparatus adopting a rectangular electrode structure having three or more gas ejection holes. In the same figure, the figure which shows the outline seen diagonally downward from the upper part is shown. FIG. 17 is an explanatory diagram showing an enlarged view of the plurality of gas ejection holes shown in FIG. 16 and 17 show an XYZ orthogonal coordinate system as appropriate.

  As shown in these drawings, a high-voltage side electrode component 1 (first electrode component) and a ground-side electrode component 2P (second electrode component) provided below the high-voltage electrode component 1 ) And the basic configuration.

  The high voltage side electrode constituting unit 1 includes a dielectric electrode 11 (first dielectric electrode) and metal electrode pairs 10H and 10L (a pair of first parts) provided on the upper surface of the dielectric electrode 11 separately from each other. Metal electrode). The ground side electrode constituting part 2P is composed of a dielectric electrode 21P and metal electrode pairs 20H and 20L (a pair of second partial metal electrodes) provided separately on the lower surface of the dielectric electrode 21P.

  The dielectric electrodes 11 and 21P each have a rectangular flat plate structure in which the X direction is the longitudinal direction and the Y direction is the short direction. Hereinafter, in the dielectric electrode 21 </ b> P, the center side may be referred to as a main region 70, and both end sides may be referred to as end regions 72 and 73, with rectifying step shape portions 52 and 53 described later as boundaries.

  For the dielectric electrode 21P (second dielectric electrode), for example, seven gas ejection holes 91 to 97 (three or more) along the X direction (first direction) in the central region R51 in the main region 70. A plurality of gas ejection holes) are provided. The plurality of gas ejection holes 91 to 97 are provided so as to penetrate from the upper surface to the lower surface of the dielectric electrode 21P.

  As shown in FIGS. 16 and 17, the metal electrode pairs 20H and 20L (a pair of second partial metal electrodes) are formed on the lower surface of the dielectric electrode 21P, and the central region R51 of the dielectric electrode 21P in plan view. Are arranged opposite to each other. The metal electrode pairs 20H and 20L have a substantially rectangular shape in plan view, and the X direction (first direction) is the longitudinal direction (electrode formation direction), and the Y direction (second direction) intersects perpendicularly to the X direction. Are directions facing each other. The metal electrode pairs 20H and 20L have the same size in plan view, and their arrangement is symmetric with respect to the central region R50.

  Similarly, the metal electrode pairs 10H and 10L (a pair of first partial metal electrodes) are formed on the upper surface of the dielectric electrode 11 and face each other across the central region R50 of the dielectric electrode 11 in plan view. Arranged. The metal electrode pairs 10H and 10L have a substantially rectangular shape in plan view, with the X direction being the longitudinal direction and the Y direction intersecting at right angles to the X direction being opposite directions. The metal electrode pairs 10H and 10L have the same size in plan view, and the arrangement thereof is symmetric with respect to the central region R50. The central region R50 and the central region R51 are provided in such a manner that they are completely the same shape and overlap completely in plan view.

  The metal electrode pairs 10H and 10L and the metal electrode pairs 20H and 20L are formed by metallization treatment on the upper surface of the dielectric electrode 11 and the lower surface of the dielectric electrode 21P. As a result, the dielectric electrode 11 and the metal electrode The electrode pairs 10H and 10L are integrally formed to constitute the high voltage side electrode component 1 (first electrode component), and the dielectric electrode 21P and the metal electrode pairs 20H and 20L are integrally formed to form the ground side electrode. The component 2P (second electrode component) is configured. As the metallization process, a process using a printing and firing method, a sputtering process, a vapor deposition process, or the like can be considered.

  Then, seven gas ejection holes 91 to 97 are linearly formed along the X direction in the central region R51 of the dielectric electrode 21P (a region where the metal electrodes 10H and 10L and the metal electrode pairs 20H and 20L do not overlap in plan view). Is provided.

  A region where the metal electrode pairs 10H and 10L and the metal electrode pairs 20H and 20L overlap in plan view is a discharge space in a dielectric space where the dielectric electrodes 11 and 21P face each other by application of an AC voltage from a high-frequency power source (not shown). (Discharge field).

  In such a configuration, when an alternating voltage is applied, a discharge space is formed between the high-voltage side electrode component 1 and the ground-side electrode component 2P, and the source gas is supplied along the gas flow 8 in this discharge space. Then, an active gas such as radicalized nitrogen atoms can be obtained and ejected to the outside below from the gas ejection holes 91 to 97 provided in the central portion of the dielectric electrode 21P.

  As shown in FIG. 17, the active gas generation device having the rectangular electrode structure shown in FIGS. 16 and 17 relates to the gas flow hole 91 along the Y direction received by the gas discharge holes 91 to 97. The possibility of unevenness in the gas flow rate and the energy received by the gas between .about.97 can be kept low.

  The active gas generation device of the base technology is provided with gas ejection holes 91 to 97 in a line along the X direction in the central region R51 of the dielectric electrode 21P.

  Each of the gas ejection holes 91 to 97 desirably functions as an orifice that forms a pressure difference between a discharge space (discharge field) formed upstream thereof and a processing chamber casing or the like downstream thereof. For this reason, the total hole area of the gas ejection holes 91 to 97 is determined in advance and cannot be changed. When a plurality of gas ejection holes are provided, the minimum processing limit to the ceramic that is the constituent material of the dielectric electrode 21P Therefore, it is necessary to provide a plurality of gas ejection holes with a hole size and a hole number corresponding to the minimum processing hole diameter in consideration of the above.

  When the gas ejection holes 91 to 97 are provided with the minimum machining hole diameter, the distance between the adjacent gas ejection holes 9i, 9 (i + 1) (i = 1 to 6) is considered in consideration of the minimum machining limit to the dielectric electrode 21P. As a result, the hole pitch is inevitably increased. Even when three or more gas ejection holes are provided, the active gas generation apparatus of the base technology uniformly injects an active gas generated by a discharge phenomenon onto a processing target substrate such as a wafer when the hole pitch becomes large. It has a problem that it becomes unsuitable for processing.

  The embodiment described below is an active gas generation device that solves the active gas generation device of the base technology described above.

<Embodiment 1>
FIG. 1 is an explanatory view schematically showing a basic configuration of an active gas generation apparatus according to Embodiment 1 of the present invention. In the same figure, the figure which shows the outline seen diagonally downward from the upper part is shown. FIG. 2 is an explanatory diagram showing an enlarged view of the plurality of gas ejection holes shown in FIG. 1 and 2 show an XYZ orthogonal coordinate system as appropriate.

  The structure and arrangement of the dielectric electrode 11, the metal electrode pairs 10H and 10L, and the metal electrode pairs 20H and 20L, the shapes and arrangements of the central regions R50 and R51, etc. are the prerequisite technologies shown in FIGS. The same reference numerals are used and description thereof is omitted as appropriate.

  As shown in these drawings, a high-voltage side electrode component 1 (first electrode component) and a ground-side electrode component 2 (second electrode component) provided below the high-voltage electrode component 1 ) And the basic configuration.

  The high-voltage side electrode configuration unit 1 includes a dielectric electrode 11 (first dielectric electrode) and metal electrode pairs 10H and 10L (a pair of first electrodes) provided discretely on the upper surface of the dielectric electrode 11. (Partial metal electrode). The ground-side electrode constituting section 2 includes a dielectric electrode 21 (second dielectric electrode) and metal electrode pairs 20H and 20L (a pair of second partial metals) that are separately provided on the lower surface of the dielectric electrode 21. Electrode).

  Each of the dielectric electrodes 11 and 21 has a flat plate structure having a rectangular shape in plan view with the X direction as the longitudinal direction and the Y direction as the short direction.

  With respect to the dielectric electrode 21 (second dielectric electrode), the gas ejection holes 31 are formed as three or more gas ejection holes along the X direction (first direction) in the central region R51 in the main region 70. To 37 and gas ejection holes 41 to 47 are provided. Each of the gas ejection holes 31 to 37 and 41 to 47 is formed in a circular shape with a (straight) diameter r1 in the opening cross-sectional shape in plan view.

  The seven gas ejection holes 31 to 37 (the first number of first gas ejection holes) are formed in a line shape along the X direction, and among the gas ejection holes 31 to 37, the gas ejection holes 3i, adjacent to each other. The first hole pitch d3 (first interval) is set in common between 3 (i + 1) (i = 1 to 6). Similarly, seven gas ejection holes 41 to 47 (second number of second gas ejection holes) are formed in a line shape along the X direction, and the gas ejection holes 41 to 47 are adjacent to each other. A second hole pitch d4 (second interval) is set in common between the ejection holes 4i, 4 (i + 1) (i = 1 to 6). The second hole pitch d4 and the first hole pitch d3 are desirably set to the same length.

  Further, the gas ejection holes 31 to 37 and the gas ejection holes 41 to 47 are provided in a two-row configuration with a spacing dY (predetermined spacing) in the Y direction.

  Then, by providing a difference d34 in the X direction at the formation position of the gas ejection hole 31 and the gas ejection hole 41, the gas ejection holes 31 to 37 and the gas ejection holes 41 to 47 of the two-row configuration are arranged in the X direction (first The gas ejection holes 3i and the gas ejection holes 4i (i = 1 to 7) are alternately arranged along the direction of

  That is, the differential hole pitch d34, which is the distance in the X direction, between the gas ejection holes 3i and the gas ejection holes 4i (i = 1 to 7) is shorter than the first hole pitch d3 and the second hole pitch d4. A differential hole pitch d43, which is an interval in the X direction, between the hole 4i and the gas ejection holes 3 (i + 1) (i = 1 to 6) is shorter than the first hole pitch d3 and the second hole pitch d4.

  As described above, the active gas generation apparatus according to Embodiment 1 has the above-described characteristics, so that the gas ejection holes 3i (or the gas ejection holes 3 () that are closest to each other along the X direction (first direction). The difference hole pitch d34 or the difference hole pitch d43, which is the distance between i + 1)) and the gas ejection holes 4i, becomes the substantial active gas ejection pitch by the gas ejection holes 31 to 37 and 41 to 47 in the two rows. .

  For example, when the first hole pitch d3, the second hole pitch d4, the differential hole pitch d34, and the differential hole pitch d43 satisfy the dimensional condition {d34 = d43 = d3 / 2 = d4 / 2}, the differential hole pitch d34 and the difference The substantial hole pitch in the X direction of the gas ejection holes 31 to 37 and 41 to 47 defined by the hole pitch d43 is set to the differential hole pitch d34 (= differential hole pitch d43), and the first hole pitch d3 and the second hole pitch. The length can be shortened to half of d4.

  As a result, the active gas generator of Embodiment 1 has a substantial hole pitch (differential hole pitch d34 or differential hole pitch d43) shorter than the first hole pitch d3 and the second hole pitch d4 (first and second intervals). The active gas with high uniformity can be ejected by ejecting the active gas from the gas ejection holes 31 to 37 and 41 to 47 having the above.

  As shown in FIGS. 1 and 2, the dielectric electrode 21 has a boundary region between the main region 70 and the end regions 72 and 73 so as to sandwich all of the gas ejection holes 31 to 37 and 41 to 47, that is, Rectification step-shaped portions 52 and 53 (a pair of end portions) that protrude upward (in the + Z direction) and are formed along the Y direction (in the second direction) in the vicinity of the end portions of the metal electrode pairs 20H and 20L. A region step portion). Each of the rectifying step shape portions 52 and 53 is formed to extend in the Y direction (+ Y direction and −Y direction) to a position exceeding at least the formation position of the metal electrode pairs 20H and 20L in plan view. The rectifying step shape portions 52 and 53 may be formed to extend in the Y direction over the entire length of the dielectric electrode 21 in the short direction, and may define the gap length in the discharge space.

  The presence of the rectifying step shape portions 52 and 53 regulates the flow of the raw material gas 6 into the discharge space from both ends of the dielectric electrode 21 in the X direction. When gas inflow from both ends in the X direction of the dielectric electrode 21 is enabled, the gas injection holes 31 and 37 and the gas injection holes 41 and 47 in the vicinity of both ends of the dielectric electrode 21 are affected by the inflow amount of the active gas. easy. This problem is solved by providing step shape portions 52 and 53 for rectification.

  By providing the rectifying step shape portions 52 and 53 on the dielectric electrode 21, as shown in FIGS. 1 and 2, the gas flow 8 between the high voltage side electrode constituting portion 1 and the ground side electrode constituting portion 2 is performed. Is surely only from two surfaces in the Y direction. That is, as shown in FIG. 2, the source gas 6 is supplied mainly from the gas flow 8 from the + Y direction to the gas ejection holes 31 to 37, and the gas flow from the −Y direction is mainly transmitted from the gas ejection holes 41 to 47. The raw material gas 6 is supplied only by 8. Therefore, since the gas flow itself is relatively stabilized, the pressure distribution in the discharge space is constant, and a uniform discharge space can be formed.

  As described above, the dielectric electrode 21 further includes the rectifying step shape portions 52 and 53, so that the gas ejection holes 31 having a short distance from both ends in the X direction among the gas ejection holes 31 to 37 and 41 to 47. Also, the phenomenon that the inflow amount of the active gas changes due to the unintentional inflow of gas from the both end portions does not occur in the gas injection holes 41 and 47 and the gas ejection holes 41 and 47. For this reason, the active gas can be ejected without causing variations between the gas ejection holes 31 to 37 and 41 to 47. As a result, since the pressure distribution is constant and the flow rates of the gas ejection holes 31 to 37 and 41 to 47 are the same, there is an effect that the generated radical density is relatively the same in the active gas that has passed through the discharge space.

  In other words, the active gas generation apparatus according to the first embodiment has the X-direction of the dielectric electrode 21 (second dielectric electrode) due to the presence of the rectifying step shape portions 52 and 53 (a pair of end region step portions). (First direction) Inflow of the raw material gas 6 from both ends into the discharge space is regulated. For this reason, the supply path | route of the source gas 6 of the same conditions can be set between the gas ejection holes 31-37 and 41-47 (between several gas ejection holes), and active gas with high uniformity can be ejected. it can.

  FIG. 3 is an explanatory view schematically showing a connection relationship between the high-voltage side electrode constituent unit 1 and the ground-side electrode constituent unit 2 and the high-frequency power source 5. As shown in the figure, the metal electrode pairs 20H and 20L of the ground side electrode constituting unit 2 are both connected to the ground level, and the metal electrode pairs 10H and 10L of the high voltage side electrode constituting unit 1 are commonly connected from the high frequency power source 5. Receive AC voltage.

  For example, an AC voltage with a zero peak value fixed at 2 to 10 kV and a frequency set at 10 kHz to 100 kHz can be applied between the metal electrodes 10H and 10L and the metal electrodes 20H and 20L from the high frequency power source 5. At this time, the zero peak value or the frequency can be set differently between the high frequency power supplies 5H and 5L.

  In addition, in the dielectric space where the dielectric electrodes 11 and 21 face each other due to the application of the AC voltage of the high-frequency power source 5, a region where the metal electrode pairs 10H and 10L and the metal electrode pairs 20H and 20L overlap in plan view is a discharge space. It is prescribed.

  Therefore, the source gas 6 passing through the discharge space DSH between the metal electrode 10H (one-side first partial metal electrode) and the metal electrode 20H (one-side second partial metal electrode) is activated in the discharge space DSH, It is ejected mainly as the active gas 7 from the gas ejection holes 31 to 37. Similarly, the source gas 6 that passes through the discharge space DSL between the metal electrode 10L (the other first partial metal electrode) and the metal electrode 20L (the other second partial metal electrode) is activated in the discharge space DSL. The gas is ejected mainly as the active gas 7 from the gas ejection holes 41 to 47.

  FIG. 4 is a perspective view schematically showing an outer configuration of the electrode group constituent unit 101 including the high voltage side electrode constituent unit 1 and the ground side electrode constituent unit 2 according to the first embodiment.

  As shown in the figure, the source gas 6 supplied along the gas supply direction D1H (−Y direction) along the Y direction passes through the discharge space DSH (see FIG. 3) between the metal electrode 10H and the metal electrode 20H. However, the active gas 7 is mainly ejected from the gas ejection holes 31 to 37 in the −Z direction. Similarly, the source gas 6 supplied along the gas supply direction D1L (+ Y direction) along the Y direction passes through the discharge space DSL (see FIG. 3) between the metal electrode 10L and the metal electrode 20L, and the discharge space. It is activated by DSL and is mainly ejected in the −Z direction as the active gas 7 from the gas ejection holes 41 to 47. Therefore, the gas supply direction D1H is the -Y direction, the gas supply direction D1L is the + Y direction, and the gas ejection direction D2 is the -Z direction.

  Therefore, the active gas 7 is applied to the wafer 64 by disposing the wafer 64, which is a substrate to be processed, immediately below the gas ejection holes 31 to 37 and 41 to 47 in a processing space SP63 in a film forming chamber 63 described later. Can be supplied uniformly.

  In addition, since the active gas 7 itself is generated in the discharge space formed between the high-voltage side electrode component 1 and the ground-side electrode component 2, the wafer 64 that is the substrate to be processed is damaged when the active gas 7 is generated. Never give.

  The electrode group constituting unit 101 of the first embodiment can be assembled by disposing the high voltage side electrode constituting unit 1 on the ground side electrode constituting unit 2. Specifically, while positioning so that the central region R50 of the dielectric electrode 11 in the high-voltage side electrode constituting portion 1 and the central region R51 of the dielectric electrode 21 in the ground-side electrode constituting portion 2 are completely overlapped in plan view. The electrode group component 101 can be completed by stacking and combining the high voltage electrode component 1 on the ground electrode component 2.

<Embodiment 2>
FIG. 5 is an explanatory view schematically showing a basic configuration of an active gas generation apparatus according to Embodiment 2 of the present invention. In the same figure, the figure which shows the outline seen diagonally downward from the upper part is shown. Moreover, FIG. 6 is explanatory drawing which expands and shows the several gas ejection hole shown in FIG. 5, and its periphery. 5 and 6 show the XYZ orthogonal coordinate system as appropriate.

  As shown in these drawings, the high-voltage side electrode component 1 (first electrode component) and the ground-side electrode component 2B (second electrode component) provided below the high-voltage electrode component 1 ) And the basic configuration. The high-voltage side electrode component 1 is the same as that of the base technology shown in Embodiment 1 and FIGS. 16 and 17 shown in FIGS. To do.

  The ground-side electrode constituting section 2B includes a dielectric electrode 21B and metal electrode pairs 20H and 20L (a pair of second partial metal electrodes) provided separately from each other on the lower surface of the dielectric electrode 21B.

  Therefore, each of the dielectric electrodes 11 and 21B has a rectangular flat plate structure in which the X direction is the longitudinal direction and the Y direction is the short direction.

  Regarding the dielectric electrode 21B (second dielectric electrode), as in the case of the dielectric electrode 21 of the first embodiment, three or more in the central region R51 in the main region 70 along the X direction (first direction). As the plurality of gas ejection holes, gas ejection holes 31 to 37 and gas ejection holes 41 to 47 are provided. That is, in the gas ejection holes 31 to 37 and the gas ejection holes 41 to 47 of the second embodiment, the same first hole pitch d3, second hole pitch d4, differential hole pitch d34, and differential hole pitch as in the first embodiment. d43 and interval dY are set.

  Therefore, also in the active gas generation device of the second embodiment, the gas ejection holes 31 to 37 and the gas ejection holes 41 to 47 are arranged along the X direction (first direction) as in the first embodiment. And the gas ejection holes 4i are alternately arranged.

  As described above, the active gas generation apparatus according to the second embodiment has the above-described characteristics, so that the active gas with high uniformity can be ejected from the gas ejection holes 31 to 37 and 41 to 47 as in the first embodiment. it can.

  Further, as shown in FIGS. 5 and 6, the dielectric electrode 21 </ b> B further includes an ejection port separation step shape portion 51 (center region step portion) formed to protrude upward (+ Z direction) in the center region R <b> 51. Yes. The ejection port separation stepped portion 51 is formed without overlapping the gas ejection holes 31 to 37 and 41 to 47 in plan view.

  The injection port separation step shape portion 51 extends from the rectification step shape portion 52 to the rectification step shape portion 53 between the gas ejection holes 31 to 37 and the gas ejection holes 41 to 47 in the X direction (first direction). ) And has a central transverse step shape portion 51c (third separation portion) that separates between the gas ejection holes 31 to 37 and the gas ejection holes 41 to 47.

  Each of the injection port separation step shape portions 51 is formed along the + Y direction (second direction) starting from the central transverse step shape portion 51c, and gas ejection holes 31 to 37 (the first number 6 first hole separation step shape portions 51h (a plurality of first separation portions) separating the gas ejection holes 3i, 3 (i + 1) (i = 1 to 6) adjacent to each other among the first ejection holes). have. Furthermore, each of the ejection port separation step shape portions 51 is formed along the −Y direction starting from the central transverse step shape portion 51c, and gas ejection holes 41 to 47 (second number of second ejection holes). Among the two gas ejection holes 4i, 4 (i + 1) (i = 1 to 6) adjacent to each other, there are six second hole separation step shape parts 51l (a plurality of second separation parts). .

  Further, the ejection port separation step shape portion 51 further includes an end step shape portion 51t for filling between the rectification step shape portions 52 and 53 at both ends in the X direction of the ejection port separation step shape portion 51. Have.

  As described above, the active gas generation apparatus according to Embodiment 2 has an injection port having the central transverse step shape portion 51c, the first hole separation step shape portion 51h, the second hole separation step shape portion 51l, and the end step shape portion 51t. It is characterized in that a separation step shape portion 51 is further provided.

  The active gas generation apparatus of the second embodiment includes gas ejection holes 31 to 37 (first number of first ejection holes) by six first hole separation step shape parts 51h (a plurality of first separation parts). Interference between the gas ejection holes 41 to 47 (second number of second ejection holes) by the six second hole separation step shape parts 51l (a plurality of second separation parts). Can be suppressed.

  Furthermore, the active gas generation device of Embodiment 2 suppresses interference between the gas ejection holes 31 to 37 and the gas ejection holes 41 to 47 by the central transverse step shape portion 51c (third separation portion). it can.

  For example, the gas flow 8X (see FIG. 2) supplied from the −Y side to the gas ejection holes 31 to 37, which may have occurred in the first embodiment due to the presence of the central transverse step shape portion 51c. As shown in FIG. 6, it can be avoided reliably.

  As a result, the active gas generation apparatus of Embodiment 2 has an effect that active gas with higher uniformity can be ejected from the gas ejection holes 31 to 37 and 41 to 47 (a plurality of ejection holes).

  FIG. 7 is an explanatory view schematically showing a cross-sectional structure in a film forming apparatus realized by using the active gas generating apparatus of the second embodiment. In FIG. 7, the dielectric electrode 21B and the dielectric electrode 11 in the AA cross section of FIG. 6 are shown. However, the electrode group constituting unit 102 includes metal electrodes 20H and 20L, which will be described later, and metal electrodes 10H and 10L. Simplification is made as appropriate by omitting illustration.

  With reference to these drawings, the overall configuration of the active gas generator will be described. The film formation processing chamber 63 accommodates a wafer 64 that is a substrate to be processed placed on the bottom surface, and functions as a substrate accommodating portion that accommodates the wafer 64 in the processing space SP63.

  The electrode group constituent part 102 composed of the high voltage side electrode constituent part 1 and the ground side electrode constituent part 2B is a main part of the active gas generating device of the second embodiment. The active gas 7 is disposed in the processing space SP63 of the film forming processing chamber 63 from the gas ejection holes 31 to 37 and 41 to 47 discretely formed in the dielectric electrode 21B of the ground side electrode constituting section 2. It spouts toward the wafer 64.

  As described above, the film formation processing chamber 63 is characterized in that it is arranged to directly receive the active gas 7 ejected from the gas ejection holes 31 to 37 and 41 to 47 of the active gas generation apparatus of the second embodiment. Yes.

  That is, the film formation processing apparatus shown in FIG. 7 is arranged below the ground-side electrode constituent part 2B of the electrode group constituent part 102 in the active gas generating apparatus of the second embodiment, and an internal wafer 64 (processing target substrate). In addition, the wafer 64 in the processing space SP63 of the film forming chamber 63 is ejected from a plurality of gas ejection holes 31 to 37 and 41 to 47. The activated gas 7 can be directly received. Therefore, the processing chamber 63 can perform the film forming process using the active gas 7 on the wafer 64.

  At this time, assuming that the formation length of the gas ejection holes 31 to 37 and 41 to 47 in the X direction is LA, the formation length of the wafer 34 is made to coincide with this formation length LA, and the electrode group constituting portion 102 is set to Y with respect to the wafer 64. The active gas 7 can be supplied to the entire wafer 64 by supplying the active gas 7 while moving along the direction. The electrode group constituting unit 101 may be fixed and the wafer 64 may be moved.

  Consider a case where the film forming process chamber 63 formed on the dielectric electrode 21B of the ground side electrode constituting section 2 has an orifice function. In this case, for example, “gas flow rate of the source gas: 4 slm, upstream of the orifice (region before passing through the gas ejection holes 31 to 37 and 41 to 47) pressure: 30 kPa, downstream of the orifice (inside the film forming chamber 63) : 266 Pa, diameter of each of the gas ejection holes 31 to 37 and 41 to 47 (orifice): φ1.3 mm, formation length of each of the gas ejection holes 31 to 37 and 41 to 47 (length in the Z direction, orifice length): An environment setting of “1 mm” is conceivable.

  Since the film forming apparatus in which the environment is set can directly apply the active gas 7 to the wafer 64 in the film forming process chamber 63 provided immediately below, the active gas 7 having a higher density and a higher electric field can be applied. Since it can be applied to the surface of the wafer 64, it is possible to realize a film forming process with higher quality and to easily perform film formation with a high aspect ratio and three-dimensional film formation.

  In the film forming apparatus, the pressure in the discharge space in the active gas generating apparatus of the second embodiment is set to 10 kPa to atmospheric pressure, and the pressure in the film forming process chamber 63 is set to be equal to or lower than the pressure in the discharge space. Is desirable.

  Although FIG. 7 shows an example applied to the active gas generation device of the second embodiment, the gas ejection holes of the active gas generation device of the first embodiment also apply to the active gas generation device of the first embodiment. If the active gas 7 ejected from 31 to 37 and 41 to 47 is arranged so as to be directly received by the film forming process chamber 63, the same effect as in the second embodiment can be obtained.

<Other aspects>
Hereinafter, another aspect of the active gas generation apparatus according to Embodiment 1 and Embodiment 2 will be described. In addition, in the aspect described below, the aspect common to Embodiment 1 and Embodiment 2 will be described on behalf of Embodiment 1 in principle for convenience of description.

(First aspect (common to both Embodiments 1 and 2))
FIG. 8 is an explanatory diagram schematically showing a connection relationship between the high-voltage power source 5 and the high-voltage side electrode constituent unit 1 and the ground-side electrode constituent unit 2 in the first mode. As shown in the figure, the first mode is characterized by having two high-frequency power supplies 5H and 5L that operate independently of each other.

  As shown in the figure, the metal electrode 20H (one-side second partial metal electrode) of the ground-side electrode constituting unit 2 is connected to the ground level on the high-frequency power source 5H side, and the metal electrode 10H of the high-voltage side electrode constituting unit 1 An AC voltage is applied from the high-frequency power source 5H to (one side first partial metal electrode).

  On the other hand, the metal electrode 20L (the second partial metal electrode on the other side) of the ground side electrode constituting part 2 is connected to the ground level on the high frequency power supply 5L side, and the metal electrode 10L (the other side first electrode on the high voltage side electrode constituting part 1). AC voltage is applied from the high frequency power source 5L.

  For example, the high-frequency power supplies 5H and 5L can apply an AC voltage between the metal electrodes 10H and 10L and the metal electrodes 20H and 20L with the zero peak value fixed at 2 to 10 kV and the frequency set at 10 kHz to 100 kHz. . At this time, the zero peak value or the frequency can be set differently between the high frequency power supplies 5H and 5L.

  Then, by applying an AC voltage (one-side AC voltage) of the high frequency power supply 5H, a region where the metal electrode 10H and the metal electrode 20H overlap in plan view is a discharge space DSH in the dielectric space where the dielectric electrodes 11 and 21 face each other. (One-side discharge space).

  Similarly, the region where the metal electrode 10L and the metal electrode 20L overlap in plan view in the dielectric space where the dielectric electrodes 11 and 21 face each other due to the application of the alternating voltage (the other side alternating voltage) of the high frequency power source 5L. It is defined as a discharge space DSL (the other side discharge space).

  Therefore, the source gas 6 that passes through the discharge space DSH between the metal electrode 10H and the metal electrode 20H is activated in the discharge space DSH, and is mainly ejected as the active gas 7 from the gas ejection holes 31 to 37. Similarly, the raw material gas 6 passing through the discharge space DSL between the metal electrode 10L and the metal electrode 20L is activated in the discharge space DSL, and is mainly ejected as the active gas 7 from the gas ejection holes 41 to 47.

  As described above, the active gas generation apparatus according to the first aspect of the embodiment includes the high-frequency power supplies 5H and 5L provided independently of each other, and applies an AC voltage (one-side AC voltage) from the high-frequency power supply 5H. Therefore, a discharge space DSH (one side discharge space) is formed, and a discharge space DSL (the other side discharge space) is formed by applying an AC voltage (the other side AC voltage) from the high frequency power source 5L.

  For this reason, in the first aspect, since the discharge conditions can be changed between the discharge space DSH and the discharge space DSL, two kinds of active gases 7 having different active states are supplied between the discharge space DSH and the discharge space DSL. Can do.

(Second mode (corresponding to the second embodiment))
The active gas generation apparatus according to the second embodiment has the injection port separation step shape portion 51 on the upper surface of the dielectric electrode 21B.

  The gas ejection holes 31 to 37 are provided in the direction of the metal electrode 10H and the metal electrode 20H with reference to the central transverse step shape portion 51c (third separation portion), and the gas ejection holes 41 to 47 are formed in the central transverse step shape portion. 51c is provided in the direction of the metal electrode 10L and the metal electrode 20L. And if the formation height of the center crossing level | step difference shape part 51c is set to the gap length of the discharge space DSL and the discharge space DSH, between the gas ejection holes 31-37 and the gas ejection holes 41-47 will be interrupted | blocked completely. Can do.

  Therefore, in the second embodiment, as shown in parentheses in FIG. 8, the source gas 6H (first source gas) supplied to the discharge space DSH and the source gas 6L (second source material) supplied to the discharge space DSL By changing the type of each other as gas), different active gases 7H and 7L (first active gas and second active gas) can be ejected. That is, the active gas 7H obtained by the source gas 6H passing through the discharge space DSH is ejected from the gas ejection holes 31 to 37, and the active gas 7L obtained by the source gas 6L passing through the discharge space DSL is ejected from the gas ejection hole 41. ˜47.

(Third Aspect (Common to Embodiments 1 and 2))
In the active gas generation apparatus of the first and second embodiments, the gas contact region, which is a region in contact with the active gas, of the high voltage side electrode constituting unit 1 and the ground side electrode constituting unit 2 (2B) is quartz, Alternatively, it is desirable to form alumina as a constituent material.

  Since the surface formed of the above constituent materials is a chemically stable substance with respect to the active gas, the third aspect suppresses the deactivation of the active gas between the gas contact region and the active gas. In this state, the active gas 7 can be ejected from the gas ejection holes 31 to 37 and 41 to 47.

(Fourth aspect (common to the first and second embodiments))
In the active gas generators of the first and second embodiments, the source gas 6 may be a gas containing at least one of nitrogen, oxygen, fluorine, a rare gas, and hydrogen, for example. These source gases 6 proceed from the outer periphery of the electrode group constituting portion 101 to the inside along the gas supply direction D1 (D1H, D1L), become the active gas 7 via the internal discharge spaces DSH and DSL, and become the active gas 7 (Gas containing radicals) is processed from a plurality of gas ejection holes 31 to 37 and 41 to 47 provided in the dielectric electrode 21 (21B) along a gas ejection direction D2, which will be described later in a processing space SP63 of a film deposition processing chamber 63. (See FIG. 5). A film forming process can be performed on the wafer 64 that is a substrate to be processed by using a highly reactive active gas in the film forming chamber 63.

  As described above, in the fourth aspect, the active gas 7 having a higher density can be generated from the source gas 6 containing at least one of nitrogen, oxygen, fluorine, rare gas, and hydrogen.

(Fifth aspect (common to the first and second embodiments))
In the active gas generator of Embodiment 1 and Embodiment 2, there is also a modified configuration in which the shape (diameter) of the plurality of gas ejection holes is set to be different between the plurality of gas ejection holes 31 to 37 and 41 to 47. Conceivable.

  The said 5th aspect has an effect which can set the amount of ejection to different content between the some gas ejection holes 31-37 and 41-47.

(Sixth aspect (common to the first and second embodiments))
In the active gas generation apparatus according to Embodiment 1 and Embodiment 2, a precursor gas (precursor gas) may be employed as the supplied source gas 6.

  By using the source gas 6 as a precursor gas (precursor gas), it is necessary not only to use a gas for surface treatment of the wafer 64 with a high aspect ratio as a reactive gas but also to form a film on the wafer 64. The precursor gas that becomes a deposition material as a film can also be supplied to the surface of the wafer 64 to form a film.

(Seventh aspect (mainly corresponding to the second embodiment))
The rectifying step shape portions 52 and 53 and the injection port separation step shape portion 51 formed on the upper surface of the dielectric electrode 21B of the second embodiment are the high voltage side electrode constituting portion 1 and the ground side electrode constituting portion 2B. It is desirable to function also as a spacer that defines the gap length (distance in the Z direction between the dielectric electrode 11 and the dielectric electrode 21B) in the discharge space.

  Therefore, a simple assembly process of stacking the high-voltage side electrode component 1 on the ground-side electrode component 2B is adopted, and the gap length in the discharge space is set by the formation height of the ejection port separation step shape portion 51. Can do.

  In the first embodiment, the above effect can also be achieved by setting the gap length in the discharge space according to the formation height of the rectifying step shape portions 52 and 53.

<Others>
In the first and second embodiments described above, the dielectric electrode 21 (21B) has a flat plate structure having a rectangular shape in plan view. However, as shown in FIGS. If the metal electrode pair 20H and 20L having a shape can be disposed on the lower surface of the dielectric electrode 21 so as to face each other with the central region R51 of the dielectric electrode 21 (21B) in plan view, the shape is There is no particular limitation. For example, the planar shape of the dielectric electrode 21 may be modified such as by rounding corners while basically adopting a rectangular shape. The same applies to the dielectric electrode 11.

  Although the present invention has been described in detail, the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that countless variations that are not illustrated can be envisaged without departing from the scope of the present invention.

DESCRIPTION OF SYMBOLS 1 High voltage side electrode structure part 2 Ground side electrode structure part 5,5H, 5L High frequency power supply 11, 21, 21B Dielectric electrode 10H, 10L, 20H, 20L Metal electrode 31-37, 41-47 Gas ejection hole 51 Injection hole Separation step shape portion 51c Center transverse step shape portion 51h First hole separation step shape portion 51l Second hole separation step shape portion 52, 53 Rectification step shape portion 63 Deposition processing chamber 64 Wafer R50, R51 Central region

Claims (10)

An active gas generation device that generates an active gas obtained by activating a source gas supplied to a discharge space,
A first electrode constituent part (1) and a second electrode constituent part (2, 2B) provided below the first electrode constituent part, wherein an AC voltage is applied to the first and second electrode constituent parts. Is applied, and by applying the alternating voltage, the discharge space is formed between the first and second electrode components,
The first electrode component includes a first dielectric electrode (11) and first metal electrodes (10H, 10L) selectively formed on the upper surface of the first dielectric electrode. The second electrode component includes a second dielectric electrode (21A, 21B) and a second metal electrode (20H, 20L) selectively formed on the lower surface of the second dielectric electrode. And a region where the first and second metal electrodes overlap in plan view is defined as the discharge space in a dielectric space where the first and second dielectric electrodes face each other when the AC voltage is applied. And
The second metal electrode has a pair of second partial metal electrodes (20H, 20L) formed to face each other across the central region (R51) of the second dielectric electrode in plan view. The pair of second partial metal electrodes has a first direction as an electrode forming direction, and a second direction intersecting the first direction as a direction facing each other,
The first metal electrode has a pair of first partial metal electrodes (10H, 10L) having a region overlapping with the pair of second partial metal electrodes in plan view,
The second dielectric electrode is
A plurality of gas ejection holes (31 to 37, 41 to 47) formed in the central region for ejecting the active gas to the outside;
A pair of end region step portions (52, 53) that protrude upward and are formed along the second direction on both ends in the first direction across all of the plurality of gas ejection holes. And the pair of end region step portions are formed to extend in the second direction to a position exceeding at least a position where the pair of second partial metal electrodes are formed in a plan view,
The plurality of gas ejection holes are:
Three or more first number of first ejection holes (31 to 37) formed at every first interval along the first direction;
Three or more second nozzles arranged at predetermined intervals in the second direction with respect to the first number of first ejection holes and formed at every second interval along the first direction. A number of second ejection holes (41-47),
In the first number of first ejection holes and the second number of second ejection holes, the first ejection holes and the second ejection holes are alternately arranged along the first direction. It is formed so that
Active gas generator. The active gas generator according to claim 1,
The second dielectric electrode is
A central region step portion (51) formed to protrude upward in the central region;
The central region step portion is
A plurality of first separation portions (51h) each formed along the second direction and separating between the first ejection holes adjacent to each other among the first number of first ejection holes;
A plurality of second separating portions (51l) each formed along the second direction, for separating the second ejection holes adjacent to each other among the second number of second ejection holes;
A third separation part (51c) formed along the first direction and separating the first number of first ejection holes and the second number of second ejection holes; Have
Active gas generator. The active gas generator according to claim 1 or 2, wherein
The AC voltage includes one side AC voltage and the other side AC voltage independent from each other, the discharge space includes one side discharge space and the other side discharge space formed separately from each other,
The pair of first partial metal electrodes has a first partial metal electrode (10H) on one side and a first partial metal electrode (10L) on the other side,
The pair of second partial metal electrodes includes a second partial metal electrode (20H) on one side and a second partial metal electrode (20L) on the other side, and the first first metal electrode is applied by applying the first AC voltage. And the one side discharge space is formed between the second partial metal electrodes, and the other side discharge space is formed between the other side first and second partial metal electrodes by the application of the other side AC voltage.
Active gas generator. The active gas generator according to claim 2,
The discharge space includes one side discharge space and the other side discharge space formed separately from each other,
The pair of first partial metal electrodes includes a first partial metal electrode on one side and a first partial metal electrode on the other side,
The pair of second partial metal electrodes include a second partial metal electrode on one side and a second partial metal electrode on the other side, and the one-side discharge space between the first and second partial metal electrodes on the one side. And the other-side discharge space is formed between the first and second partial metal electrodes on the other side,
The first number of first ejection holes are provided in the direction of the one-side first and second partial metal electrodes with respect to the third separation portion, and the second number of second ejection holes. Is provided in the direction of the first and second partial metal electrodes on the other side with respect to the third separation portion,
The source gas includes first and second source gases supplied independently of each other; the active gas includes first and second active gases;
The first active gas obtained by passing the first source gas through the one-side discharge space is ejected from the first number of first ejection holes, and the second source gas is ejected from the other side. The second active gas obtained through the discharge space is ejected from the second number of second ejection holes;
Active gas generator. The active gas generator according to claim 1 or 2, wherein
Of the first and second electrode constituent parts, the gas contact region, which is a region in contact with the active gas, is formed from quartz or alumina as a constituent material,
Active gas generator. The active gas generator according to claim 1 or 2, wherein
The source gas is a gas containing at least one of nitrogen, oxygen, fluorine, rare gas, and hydrogen.
Active gas generator. The active gas generator according to claim 1 or 2, wherein
The shape of the plurality of gas ejection holes is set to be different from each other between the plurality of gas ejection holes,
Active gas generator. The active gas generator according to claim 1 or 2, wherein
The source gas is a precursor gas.
Active gas generator. The active gas generator according to claim 2,
The gap length in the discharge space is defined by the formation height of the pair of end region step portions and the central region step portion.
Active gas generator. The active gas generator (102) according to claim 1 or 2,
A film forming process chamber (63) disposed below the second electrode component and performing a film forming process with an active gas on an internal processing target substrate (64);
The film formation chamber is arranged to directly receive the active gas ejected from the plurality of gas ejection holes of the active gas generation device,
Deposition processing equipment.

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