JP2015005780A - Plasma processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an atmospheric pressure plasma processing apparatus capable of suppressing deposition on any part other than an object to be processed.SOLUTION: In a plasma source that is a surface discharge type dielectric barrier discharge system formed with an antenna and a ground in a dielectric substance, a plasma processing apparatus brings an object to be processed into substantial contact with a plasma source to generate plasma on a surface opposite to a surface having the plasma source on the object to be processed.

Description

  The present invention relates to an atmospheric pressure plasma processing apparatus and a plasma processing method for performing film formation, surface modification, sterilization, and the like using atmospheric pressure plasma.

In recent years, the study of technology for generating plasma at atmospheric pressure has progressed, and the generation of functional films such as Si-based thin films and diamond-like carbon (DLC) thin films, the removal of organic substances on the surface of materials, and plasma sterilization will be widely studied. Became. In this atmospheric pressure plasma processing, dielectric barrier discharge is widely used when plasma processing is performed on an object to be processed (for example, a 1 m × 1 m substrate) having a certain area or more. There are two main types of dielectric barrier discharge. One is described in, for example, Patent Document 1, and uses remote plasma that generates plasma with a parallel plate type plasma source in which a dielectric is inserted between two parallelly arranged metals. It is.
The other is described in, for example, Patent Document 2, and is a surface discharge method in which a pair of comb-shaped electrodes are arranged in one dielectric surface. This surface discharge type discharge electrode pattern has long been adopted in plasma display panels.

Japanese Patent Laid-Open No. 2005-135892 JP 2006-331664 A

  In an atmospheric pressure plasma apparatus used for film formation or the like, for example, a parallel plate type dielectric barrier discharge system as described in Patent Document 1 is mainly used. In this parallel plate type dielectric barrier discharge method, plasma is generated between two discharge electrodes. For example, the object to be processed is inserted between the discharge electrodes, or the object to be processed is disposed near the lower part of the discharge electrode. Then, a film forming process is performed. The problem with this method is that, besides the object to be processed, the surface of the discharge electrode, which is a plasma source, is also formed. The film attached to the discharge electrode side is peeled off and becomes a foreign substance, which obstructs the film forming process on the object to be processed. Therefore, if a certain film or more adheres to the discharge electrode, it is necessary to replace and clean the discharge electrode, which decreases the operating rate of the apparatus and impairs mass productivity.

  On the other hand, in the surface discharge type plasma processing apparatus described in Patent Document 2, linear electrodes that are arranged in parallel and generate plasma are embedded in a dielectric, and the array surface of the linear electrodes is used as a processing surface of an object to be processed. It is arranged so as to oppose (surface) with a gap of 2 mm, for example, and the object to be processed is conveyed by the conveying means. This method also has a problem that the surface of the plasma source is formed in addition to the object to be processed, similarly to the parallel plate type dielectric barrier discharge method.

  An object of the present invention is an atmospheric pressure plasma processing apparatus mainly used for film formation of an object to be processed, and an atmospheric pressure plasma processing apparatus which suppresses film formation on a part other than the object to be processed and a plasma using the same. It is to provide a processing method.

  The typical ones of the present invention are as follows. That is, the plasma processing apparatus of the present invention includes a plasma discharge portion in an atmospheric pressure atmosphere provided in a processing chamber, a high-frequency power source that supplies high-frequency power to the plasma discharge portion, and a processing gas that supplies processing gas to the processing chamber. In the plasma processing apparatus including a supply source and a target object holding unit that holds the back surface of the target object, the plasma discharge unit includes a pair of electrodes arranged in parallel in the dielectric, and a surface of the dielectric. A surface discharge type dielectric barrier discharge type plasma source for generating plasma, wherein the object to be processed is held on a predetermined object holding surface in the plasma discharge part, and the dielectric in the plasma discharge part The surface of the object to be processed and the object to be processed holding surface are substantially at the same height, and the plasma is in the atmospheric pressure atmosphere in the vicinity of the surface of the object to be processed opposite to the object to be processed holding surface. It is configured to be made, characterized in that.

  According to the present invention, since plasma is generated only in the vicinity of the surface of the object to be processed, film formation on the plasma discharge part and the inner wall of the processing container can be suppressed, so that the cleaning cycle of the apparatus can be extended and mass productivity can be improved. Is possible.

It is the schematic for demonstrating the whole structure of the plasma processing apparatus used as the 1st Example of this invention. It is a figure explaining the cross-sectional structure of a plasma discharge part of 1st Example, and the positional relationship of a plasma discharge part, a to-be-processed object, and plasma. In 1st Example, it is operation | movement explanatory drawing when there is no space | gap in a plasma discharge part. In 1st Example, it is operation | movement explanatory drawing of a plasma discharge part when there exists a space | gap in a plasma discharge part. It is the schematic which showed the structure of the cross section between A-A 'of FIG. 2A about the plasma discharge part in 1st Example. It is a figure explaining the schematic of the apparatus which switches gas atmosphere in a 1st Example. It is the schematic for demonstrating the whole structure of the plasma processing apparatus used as the 2nd Example of this invention. It is the schematic for demonstrating the electrode structure of the cylindrical plasma discharge part in a 2nd Example. It is the schematic for demonstrating the electrode structure of the other cylindrical plasma discharge part used as the modification of the 2nd Example of this invention. It is the structural example which expanded and showed the part of R of FIG. 7A. It is the schematic for demonstrating the whole structure of the plasma processing apparatus used as the 3rd Example of this invention. It is the schematic for demonstrating the electrode structure of the cylindrical plasma discharge part in 3rd Example. It is the schematic for demonstrating the electrode structure of the cylindrical plasma discharge part used as the modification of 3rd Example. FIG. 10A shows an example of the structure of the P portion in FIG. 10A.

The plasma processing apparatus of the present invention has a surface discharge type dielectric barrier discharge type plasma discharge plate in which a pair of electrodes (antenna and ground) are formed in a plane in one dielectric body, and is used in an atmospheric pressure atmosphere. The back surface of the object to be processed is brought into close contact with the plasma discharge plate, and plasma is generated in the vicinity of the surface of the object to be processed on the opposite side to the plasma discharge plate to perform the film forming process. Furthermore, a processing gas diluted with a rare gas that is easily discharged, such as helium or argon, is used as a processing gas for film formation, and the processing gas is supplied to the space on the plasma generation side, If necessary, discharge between the discharge plates with a slight gap generated between the discharge plate and the back surface of the object to be processed is difficult, for example, by supplying nitrogen. Let it be suppressed. Note that the atmospheric pressure atmosphere in the present invention means that the pressure of the processing gas is equivalent to the atmospheric atmosphere.
Hereinafter, embodiments of a plasma processing apparatus and a plasma processing method to which the present invention is specifically applied will be described in detail with reference to the drawings.

  First, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 shows the overall configuration of the atmospheric pressure plasma processing apparatus of the first embodiment. This atmospheric pressure plasma processing apparatus is used to form an amorphous Si or diamond-like carbon (DLC) film on a resin or glass substrate having a thickness of 1 mm, a width of 1 m, and a length of 20 m, for example. FIG. 2 (FIGS. 2A to 2C) is a cross-sectional structure and operation explanatory view in the vicinity of the plasma discharge portion of the atmospheric pressure plasma processing apparatus. FIG. 3 shows an outline of a cross section (A-A ′ in FIG. 2A) of the discharge part of the atmospheric pressure plasma processing apparatus as viewed from above.

  The plasma discharge part 1 is installed in the housing | casing 16 of an atmospheric condition. The plasma discharge part 1 has a substantially rectangular planar shape. The casing 16 forms a processing chamber whose wall surface is electrically grounded. A plurality of rollers 17 form a target object holding surface B-B ′ that conveys and holds the target object along the plasma 6 generation region on the surface of the plasma discharge unit 1. The processing object 7 has its back surface held by the plurality of rollers 17 and the surface of the plasma discharge unit 1 and passes over the plasma discharge unit 1 in the housing 16 along the processing object holding surface BB ′. It has a structure. At this time, the front side of the object 7 is conveyed while facing the plasma 6. Needless to say, the conveying means for the object 7 to be processed is not limited to a roller, and a belt or other conveying means may be used.

  A processing gas for plasma generation is supplied to the space in the casing 16 where plasma is generated via the shower head 8. The processing gas for plasma generation is supplied from the processing gas supply source 9-1 to the shower head 8 through the gas supply line 10-1. The processing gas for generating plasma is a gas diluted with a rare gas such as helium or argon which is easily discharged. When there is a gap 23 between the plasma discharge part 1 and the object 7 to be processed (details will be described later), a discharge suppression gas such as nitrogen gas that is difficult to discharge is disposed at the end of the plasma discharge part 1. It supplies so that it may supply from the suppression gas supply part 14 (14-1, 14-2, 1-3). The discharge suppression gas is supplied from the gas supply source 9-2 to the gas supply units 14-1 to 14-3 via the gas lines 10-2 to 10-4. Further, the exhaust system 11 is connected to the housing 16 via the exhaust lines 12 (12-1, 12-2). In addition, a gas atmosphere switching device 13 is installed at the entrance / exit of the target object provided in the vicinity of the target object holding surface B-B ′ of the casing 16.

As shown in detail in FIGS. 2A and 3, the plasma discharge unit 1 includes a dielectric 5 having a flat surface and a pair of electrodes 4 embedded in the dielectric 5 and connected to the high-frequency power source 3. ing. The pair of electrodes 4 has a structure in which two types of electrodes 4-1 and 4-2 of an antenna and a ground are alternately installed in a dielectric 5 in parallel. The electrodes 4-1 and 4-2 are connected to a high frequency power source 3 for plasma discharge. As shown in FIG. 2A, the dielectric 5 is thin on the discharge part side that generates the plasma 6, and the thickness T1 is approximately 10 μm to several mm. On the other hand, the thickness T2 of the dielectric layer on the side where no plasma is generated is 10 times or more of T1. In other words, the pair of electrodes are embedded in the thickness direction of the dielectric film 5 so as to be biased toward the discharge portion rather than the center thereof. Further, the plasma discharge section 1 has a dielectric surface on the discharge side of the plasma discharge section that is substantially the same height as the workpiece holding surface BB ′, that is, the surface of the dielectric 1 is the back surface of the workpiece 7. It is installed in the height position which touches or substantially touches. E indicates the diameter of the electrode 4. The width L of the two types of electrodes, the antenna and the ground, includes a width L1 between the electrode 4-1 and the electrode 4-2, and a width L2 between the electrode 4-2 and the electrode 4-1. The width L (L 1, L 2) of the two types of electrodes, that is, the antenna and the ground, is 4 between the thickness D of the object to be processed, the thickness T 1 of the dielectric surface layer, and between the plasma discharge part 1 and the object 7 It is desirable that the gap G is larger than the total of the gaps G that can be formed. That is

L> D + G + T

It is desirable that the following formula holds. As a result, the electric lines of force 18 generated when a high-frequency power is applied between the pair of electrodes 4 to cause a current to flow sufficiently ooze out on the film formation side front side of the object 7 to be processed.

  This will be described with reference to the operation explanatory diagrams of FIGS. 2B and 2C. The object 7 includes a substrate portion 7A and a thin film layer 7B such as a SiN film or a diamond-like carbon film formed on the substrate portion using plasma. In FIG. 2B, the surface of the plasma discharge part 1 and the workpiece holding surface BB ′ substantially coincide, and the gap G between the surface of the plasma discharge part 1 and the back surface of the workpiece 7 is zero (the gap is In other words, the object 7 and the discharge part 1 are in close contact with each other. A portion of the electric lines of force 18 generated when high frequency power is applied between the pair of electrodes 4 passes through the dielectric film 5 (solid layer) and the object to be processed 7 (solid layer), and then the housing. 16 reaches the atmospheric pressure atmosphere (gas layer), and the electric field acts on the processing gas for generating plasma to generate plasma. That is, an electric field having a strength necessary for plasma generation can be formed only in an atmospheric pressure atmosphere in the vicinity of the surface side 22 of the workpiece 7, and the plasma 6 is formed.

  The gap G between the front surface of the plasma discharge part 1 and the back surface of the object 7 is preferably zero (there is no gap and the object 7 and the discharge part 1 are in close contact). However, depending on the material and structure of the object 7 to be processed, the surface of the plasma discharge unit 1 and the object to be processed are conveyed and held as shown in FIG. 2C in order to smoothly convey the object 7 to be processed. In some cases, it may be necessary to form a slight gap 23 between the surface of the plasma discharge unit 1 and the back surface of the object 7 to be processed, by separating the object-to-be-treated holding surface BB ′. However, if there is such a gap 23, there is a possibility that plasma is generated by the electric field in the gap 23. In such a case, a discharge suppression gas such as nitrogen gas that is difficult to discharge is introduced into the gap 23 between the plasma discharge unit 1 and the workpiece 7 from the discharge suppression gas supply unit 14 installed at the end of the plasma discharge unit 1. Configure to supply. Thus, when the gap G is not zero, the object to be processed is adjusted by adjusting the voltage of the high frequency power of the plasma discharge power supply 3 so that the gas is not discharged with the nitrogen gas but is discharged with the processing gas diluted with the rare gas. 7 can be generated only in an atmospheric pressure atmosphere in the vicinity of the surface side 22 of the surface. That is, part of the electric lines of force 18 generated when high-frequency power is applied between the pair of electrodes 4 are the dielectric film 5 (solid layer), the discharge suppressing gas layer, and the object 7 (solid layer). ), The atmospheric pressure atmosphere (gas layer) in the housing 16 is reached, and the electric field acts on the processing gas for plasma generation to generate plasma.

  In addition, as a processing gas, a gas in which hydrogen or the like is added as necessary is used based on a mixed gas obtained by adding SiH 4 gas to a rare gas in the film formation of amorphous Si. In forming the SiN film, a processing gas obtained by diluting a mixed gas of SiH4, H2, N2, or ammonia with a rare gas is used. In producing the diamond-like carbon film, it is desirable to use a gas obtained by diluting a gas obtained by adding hydrogen or the like to a hydrocarbon gas such as acetylene if necessary.

  In Example 1, there are a plurality of discharge suppression gas supply units 14, but when the object 7 is not on the discharge suppression gas supply unit 14, the discharge suppression gas is not supplied. Is desirable. Further, a plurality of plasma discharge units 1 may be installed in the casing 16, and in this case, it is better to stop the discharge when the object 7 is not on the entire discharge surface of the plasma discharge unit. .

  It is desirable that the gas atmosphere in the processing chamber (inside the casing 16) is generally a processing gas for film formation on the surface side of the object to be processed and a nitrogen gas on the back side of the object to be processed. In this case, the upper part of the casing is exhausted through an exhaust line 12-1 by an exhaust system 11-1 including an exhaust pump, and the lower part of the casing is exhausted through an exhaust line 12-2. -2 is exhausted. Further, the gas collected in the exhaust system 11-1 may be supplied to the gas supply system 9-1 to circulate a part thereof. Naturally, the gas collected in the exhaust system 11-2 may be supplied to the gas supply system 9-2 and partially circulated.

An apparatus 13 for switching the gas atmosphere is installed at a portion of the casing 16 where the object to be processed enters and exits. An example of this structure is shown in FIG. The gas atmosphere switching device is divided into three regions by a partition plate 28. Nitrogen, a rare gas, etc. are supplied to a center part via the gas supply line 10-9. The supplied gas flows into the adjacent region, and the gas flow 29-2 merges with the gas flow 29-3 flowing from the processing chamber to become a gas flow 29-4 and is exhausted by the exhaust line 12-4. In addition, among the gases supplied from the gas line 10-9 to the gas atmosphere switching device 13, the gas 29-5 flowing to the left in the drawing joins the gas flow 29-6 flowing from the atmospheric atmosphere to join the gas flow 29-7. And exhausted through the gas exhaust line 12-3. This prevents air from flowing into the processing chamber, that is, the housing 16. When the pressure in the atmosphere (atmospheric pressure atmosphere) in the housing 16 is P1, and the pressure in the air atmosphere is P3,

P1 <P3

It is desirable that this relationship holds. That is, the plasma generated by the plasma discharge unit 1 is plasma due to atmospheric pressure discharge, but strictly speaking, it may be, for example, 0.9 atmosphere, which is slightly reduced in pressure from the atmospheric air.

  According to the present embodiment, since plasma is generated only in an atmospheric pressure atmosphere near the surface of the object to be processed, film formation on the plasma discharge part and the inner wall of the processing container can be suppressed. Therefore, it is possible to extend the cleaning cycle of the plasma processing apparatus and improve mass productivity.

  Next, a second embodiment of the present invention will be described with reference to FIGS. The description of the same configuration as that of the first embodiment is omitted. In this embodiment, an outline of a roll-to-roll atmospheric pressure film forming plasma apparatus for a flexible substrate is shown. A plasma source 1 capable of generating plasma on the outer periphery of the cylinder is installed in the housing 16. The to-be-processed object 7 is supplied from the roll 19-1, and is comprised so that it may be wound up with the roll 19-2. And the to-be-processed object 7 contacts the cylindrical plasma discharge part 1 only the distance of angle (theta).

The structure of the plasma source 1 is an electrode structure shown in FIG. The cylindrical discharge plasma source shown in FIG. 6 is formed by winding two electrodes (conductors) 4-1 and 4-2 in a spiral shape around the surface of a cylindrical dielectric (insulator) 5-1. Thus, a dielectric layer 5-2 made of glass, alumina, yttria or the like is formed. Electrodes (conductive wires) 4-1 and 4-2 are connected to a high-frequency power source 3 for plasma discharge. In the plasma discharge portion, the thickness T1 of the dielectric layer in the inner part of the cylinder when viewed from the electrode 4 is, for example, 10 times or more thicker than the thickness T2 of the dielectric layer on the outer peripheral side when viewed from the electric wire. Yes. The distance L1 between the two electrodes and the distance L2 between the electrodes when spirally wound are substantially equal. Further, if the thickness of the object 7 is D and the gap between the object 7 and the discharge part is G,

L1≈L2> D + G + T2

It is desirable that Of course, it is desirable that G is almost 0 mm.

The processing gas supplied from the processing gas supply system 9-1 is supplied to the surface side 20 of the object 7 to be processed, that is, the space 24 where the film forming process is in contact with the gas supply line 10-1 and the shower. Supplied through the head 8. As in the case of Example 1, a gas diluted with a rare gas is used as the processing gas. In the space 25 in contact with the back side 21 of the object 7 to be processed, a gas that is difficult to discharge with respect to the processing gas such as nitrogen gas from the gas supply port 14 through the gas supply line 10-2 from the gas supply source 9-2. Supply. As a result, the plasma 6 is generated on the surface side of the object to be processed that is in contact with the plasma source 1, and plasma is not generated on the side where the object to be processed is not in contact (the lower portion in the figure). A gas atmosphere switching device 13 is installed at the entrance of the object to be processed of the casing 16 so that the atmosphere does not enter the casing which is a processing chamber. When the pressure of the space 24 (atmospheric pressure atmosphere) on the side where the plasma is generated is P1, the pressure of the space 25 on the side where the plasma is not generated is P2, and the pressure of the atmospheric atmosphere around the housing is P3,

P1 <P2 <P3

It is desirable that a slight pressure difference be generated. For this reason, the plasma discharge space 24 is connected to an exhaust system 11-1 including an exhaust pump through an exhaust line 12-1. In addition, the space 25 that does not generate plasma is connected to an exhaust system 11-2 through an exhaust duct 12-2.

  Also in this embodiment, since plasma is generated only in an atmospheric pressure atmosphere near the surface of the object to be processed, film formation on the plasma discharge part and the inner wall of the processing container can be suppressed. Therefore, it is possible to extend the cleaning cycle of the plasma processing apparatus and improve mass productivity.

[Modification 1]
Next, a modification of the second embodiment of the present invention will be described with reference to FIG. 7 (FIGS. 7A and 7B). In the plasma discharge portion shown in FIG. 7A, a dielectric layer 5 such as yttria or alumina is formed on the outer periphery of a metal cylinder 30 corresponding to the electrode 4-2, and an electrode (conductor) 4-1 is formed on the outer periphery thereof. It has a structure that is wound spirally. FIG. 7B is an example of a structure in which the portion R in FIG. 7A is enlarged. A spiral groove (screw groove) is provided on the surface of the metal cylinder 30, the dielectric layer 5 is formed thereon, and the electrode 4-1 is wound along the groove appearing on the dielectric layer. This has the advantage of simplifying manufacturing. Further, when the interval (pitch) between the electrodes (4-1) is S3,

1/2 × S3> D + G

It is desirable to satisfy the following relational expression.

  Also in this embodiment, since plasma is generated only in an atmospheric pressure atmosphere near the surface of the object to be processed, film formation on the plasma discharge part and the inner wall of the processing container can be suppressed. Therefore, it is possible to extend the cleaning cycle of the plasma processing apparatus and improve mass productivity.

  Next, Embodiment 3 will be described with reference to FIGS. The description of the same components as those in the first embodiment or the second embodiment is omitted. In this embodiment, an outline of an apparatus for performing plasma treatment on the surface of a recessed portion such as the inside of a container is shown. In the case 16, plasma discharge units 1-1 and 1-2 are installed. The plasma discharge unit 1-1 is a flat plate-type plasma source having a structure equivalent to that of the first embodiment, and a wall surface of a processing object such as a container bottom is installed on a flat portion. The plasma discharge unit 1-2 generates plasma inside a cylindrical shape, and has, for example, an electrode structure shown in FIG. In the present embodiment, the container 7 as the object to be processed is held in the holding space inside the plasma discharge parts 1-1 and 1-2. The container which is a to-be-processed object is carried in to a holding | maintenance space part, for example with a conveyance robot, and is carried out after a plasma process.

  The cylindrical inner periphery discharge plasma source shown in FIG. 9 is confined inside the dielectric 5 in a state in which the electrodes 4-1 and 4-2 for dielectric barrier discharge are spirally wound in pairs. . The electrodes 4-1 and 4-2 are connected to a high frequency power source 3 for plasma generation. Of the dielectric 5, the thickness T 1 of the dielectric 5-2 at the inner portion of the cylinder as viewed from the electrode 4 is, for example, 10% of the thickness T 2 of the outer dielectric 5-1 as viewed from the electrode 4. Thick more than twice. Thereby, the plasma is generated in the inner part of the cylinder.

Regarding the dimensions such as the distance between the container and the plasma source, when the plasma source shown in FIG. 9 is used, the thickness D of the wall surface of the object 7 (container), the distance G between the plasma source and the container, the dielectric layer The relationship between thickness T1 and electrode spacing L1, L2 is

L1≈L2> D + G + T1

It is desirable that

  Note that when the values of the electrode intervals L1 and L2 are different, it is desirable that the above inequality is satisfied with respect to L1 or L2 having a small interval value.

  Thereby, the container which is a to-be-processed object is carried in to a holding | maintenance space part, a plasma is produced | generated along this inner wall surface of a container, and it becomes possible to perform a plasma process inside a container. Also in this embodiment, since the plasma is generated only in the atmospheric pressure atmosphere near the surface of the object to be processed, in other words, only inside the container, when performing the film forming process, the plasma is applied to the plasma discharge part and the inner wall of the processing apparatus. Film formation can be suppressed. Therefore, it is possible to extend the cleaning cycle of the plasma processing apparatus and improve mass productivity.

[Modification 2]
Next, a modification of the third embodiment of the present invention will be described with reference to FIG. 10 (FIGS. 10A and 10B).

  In the cylindrical inner periphery discharge plasma source shown in FIG. 10A, a dielectric layer 5 is formed inside a metal cylindrical part 30, and an electrode 4 is spirally installed inside the dielectric layer 5. FIG. 10B shows a structural example of the P portion in FIG. 10A. In the example of FIG. 10B, by forming a thread groove inside the cylindrical metal part 30, and then forming the dielectric layer 5, the electrodes 4 can be easily installed at equal intervals.

  In the container, a gas line 10-1 for supplying the processing gas and a gas line 12 for exhausting the gas in the container are installed. In addition, a lid 15 is installed to prevent the processing gas in the container from diffusing into the housing. As in the first embodiment, the processing gas is a gas diluted with a rare gas. When sterilization is performed, for example, a mixed gas obtained by diluting an oxygen gas with a rare gas is used. For example, nitrogen gas is supplied from the gas line 10-2 to the space inside the casing 16 and outside the container, which is less likely to discharge than the processing gas.

When the plasma source shown in FIG. 10A is used, when the electrode pitch is S3 in FIG. 10B (L3≈L1 + L2, L1 = L2),

1/2 × S3> D + G

It is desirable that this relationship holds.

  Thereby, plasma is generated along the inner wall surface of the container as the object 7 to be processed, and the inside of the container can be subjected to plasma processing.

1: discharge plate, 3: discharge power supply, 4: electrode, 5: dielectric, 6: plasma, 7: target object, 8: shower head, 9: gas supply source, 10: gas supply line, 11: exhaust System: 12: exhaust line, 13: gas atmosphere switching device, 14: discharge suppression gas supply unit, 15: lid, 16: housing, 17: roller, 18: lines of electric force, 19: roll, 20: workpiece 21: Back side of object to be processed, 22: Plasma discharge side, 23: Gap between discharge part and object to be processed, 24: Process gas supply space, 25: Plasma discharge suppression gas supply space, 28: Partition plate, 29 : Gas flow, BB ′: Object to be processed holding surface.

Claims (2)

A plasma discharge section provided in the processing chamber;
A high frequency power supply for supplying high frequency power to the plasma discharge unit;
A processing gas supply source for supplying a processing gas to the processing chamber;
In a plasma processing apparatus comprising a target object holding means for holding a back surface of a target object,
The plasma discharge unit is a dielectric barrier discharge type plasma source that generates plasma on the surface of the dielectric,
In the plasma discharge unit, the object to be processed is held on a predetermined object holding surface,
In the plasma discharge part, the surface of the dielectric and the workpiece holding surface are substantially at the same height,
The plasma is configured to be generated in the processing gas atmosphere in the vicinity of the surface of the target object opposite to the target object holding surface,
A discharge suppression gas supply unit that supplies a discharge suppression gas to a minute gap formed between the surface of the plasma discharge unit and the back surface of the object to be processed held by the object holding surface;
A plasma processing apparatus. In Claim 1, The process gas diluted with the noble gas is supplied to the surface on the side that generates plasma with respect to the object to be processed, and the object on the side where the plasma source is installed with respect to the object to be processed. The surface is configured to supply a discharge suppression gas that is less likely to discharge than the processing gas.
A plasma processing apparatus.

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