JPWO2017126153A1 - Optical fingerprint authentication device - Google Patents

Abstract

SUMMARY OF THE INVENTION An object of the present invention is to provide an optical fingerprint authentication apparatus that is thin and has a simple structure and has excellent economic efficiency having organic electroluminescence elements of various shapes as illumination light sources according to the purpose.
The optical fingerprint authentication apparatus of the present invention is an optical fingerprint authentication apparatus that has at least a light source and an image sensor, and detects diffused light by the image sensor. The optical fingerprint authentication apparatus includes an organic electroluminescence panel as a light source, The electroluminescence panel is composed of a light emitting part region constituted by an organic electroluminescence element and a light-transmitting non-light emitting part, and the image sensor includes at least an organic photoelectric conversion layer, and the image sensor includes the organic sensor. An optical fingerprint authentication device comprising a non-light emitting portion of an electroluminescence panel or a fingerprint information reading portion arranged adjacent to the non-light emitting portion.

Description

  The present invention relates to an optical fingerprint authentication apparatus that performs personal authentication by an optical method using a fingerprint. More specifically, the present invention relates to an optical fingerprint authentication device including a fingerprint information reading unit using an organic electroluminescence element as a light source for illumination and using a photoelectric conversion method as an image sensor for detection.

  In recent years, as one of methods for identifying a user in a bank ATM (Automated Teller Machine), a mobile phone, a PDA (Personal Data Assistant), a personal computer, etc., a user's fingerprint There is an increasing need for personal authentication using biological patterns such as veins, voiceprints, and irises. Among them, fingerprint is the oldest and proven biometric authentication method. A fingerprint input device using a total reflection prism has been put into practical use for a long time, but it has been difficult to reduce the size of the fingerprint input device, and is not suitable for portable terminals such as notebook computers, PDAs, and mobile phones. For this reason, various fingerprint input devices that have been made thinner and smaller have been disclosed.

  For example, in Japanese Patent No. 3684233, a light emitting diode (hereinafter abbreviated as LED) is disposed as a light source for illumination next to a solid-state imaging device on a wiring board, and the light exits from the LED for illumination. A method is disclosed in which light enters the finger and scattered light passes through the fingerprint and enters the solid-state imaging device to recognize the fingerprint pattern.

  Further, in JP-A-2005-18595, an illumination LED is arranged next to a solid-state imaging device, light emitted from the illumination LED passes through a protective member and enters a finger, and scattered light is fingerprints. A method for recognizing a fingerprint pattern by passing through a protective member and entering a solid-state imaging device is disclosed.

  Japanese Patent Laid-Open No. 2003-233805 and Japanese Patent Laid-Open No. 2005-38406 disclose a circuit in which an image sensor (solid-state imaging device) and a protective member are stacked on a circuit board and a finger is brought into close contact with the surface of the protective member. A method of disposing an illumination LED on a substrate next to a light sensor and applying the light to a finger through a light guide is disclosed.

  Patent Document 1 discloses a fingerprint input device that uses an LED as a light source for illumination and captures a fingerprint pattern generated by scattered light inside the finger with the image sensor while moving the relative position between the finger and the image sensor. ing.

  Further, Patent Document 2 is an optical fingerprint input device that irradiates light from an LED onto a finger surface and receives reflected light from the finger surface with an image sensor, and includes an imaging chip having a specific structure. A configuration is proposed.

  However, since each fingerprint authentication device proposed above uses an LED as a light source for illumination, it is necessary to incorporate a light guide plate or the like as the illumination unit, resulting in a thick structure. From the viewpoint of reducing the thickness of the device, it has been a major obstacle. In addition, the fingerprint authentication device using LEDs has a complicated manufacturing process, which has been a cause of cost increase. In addition, the LED has a problem that it is difficult to process into a shape having a curved surface such as a circle or an ellipse due to its structure.

JP 2007-328511 A JP 2005-118289 A

  The present invention has been made in view of the above problems, and its solution is to provide an organic electroluminescence panel as an illumination light source and a photoelectric conversion type image sensor having at least an organic photoelectric conversion layer as an image sensor. It is an object of the present invention to provide an optical fingerprint authentication device that has an organic electroluminescence element of various shapes as an illumination light source with a simple configuration and can be manufactured at low cost.

  As a result of intensive studies in view of the above problems, the present inventor has at least a light source and an image sensor, and has an organic electroluminescence element (hereinafter also referred to as an organic EL element) as the light source ( Hereinafter, it is also referred to as an organic EL panel.) With an optical fingerprint authentication device having a fingerprint information reading unit having at least an organic photoelectric conversion layer as an image sensor, a thin and simple configuration can be used. Accordingly, the present inventors have found that an optical fingerprint authentication device that has various shapes of organic electroluminescence elements as illumination light sources and can be manufactured at low cost can be realized.

  That is, the said subject of this invention is solved by the following means.

1. An optical fingerprint authentication device having at least a light source and an image sensor and detecting diffused light by the image sensor,
As the light source, it has an organic electroluminescence panel,
The organic electroluminescence panel is composed of a light emitting part region constituted by an organic electroluminescence element and a light transmissive non-light emitting part.
The image sensor includes at least an organic photoelectric conversion layer, and the image sensor includes a non-light-emitting portion of the organic electroluminescence panel or a fingerprint information reading unit disposed adjacent to the non-light-emitting portion. An optical fingerprint authentication device characterized by that.

  2. 2. The optical fingerprint authentication device according to claim 1, wherein the image sensor includes at least a counter electrode, an organic photoelectric conversion layer, a pixel electrode, and a thin film transistor.

  3. The optical fingerprint authentication device according to claim 1 or 2, wherein the image sensor is independently installed on a surface opposite to a light emitting surface of the organic electroluminescence panel.

  4). The optical fingerprint authentication device according to claim 1 or 2, wherein the image sensor is independently installed on a light emitting surface side of the organic electroluminescence panel.

  5. Any one of Items 2 to 4, wherein at least one of the counter electrode, the organic photoelectric conversion layer, and the pixel electrode constituting the image sensor is formed in a non-light emitting portion of the organic electroluminescence panel. An optical fingerprint authentication device according to claim 1.

  6). The counter electrode, the organic photoelectric conversion layer, and the pixel electrode constituting the image sensor are all non-light emitting portions of the organic electroluminescence panel and are formed on the same plane as the organic electroluminescence element. Item 5. The optical fingerprint authentication device according to any one of Items 2 to 4.

  7). The organic electroluminescence element has an organic functional layer unit between a pair of opposing electrodes, wherein one of the electrodes is a light transmissive electrode and the other is a non-light transmissive electrode. The optical fingerprint authentication device according to any one of items 1 to 6.

  8). 8. The optical fingerprint authentication device according to claim 7, wherein the light transmissive electrode is made of an oxide semiconductor or a thin metal or alloy.

  9. The organic electroluminescence panel is configured such that an organic electroluminescence element having a continuous configuration is arranged in an outer peripheral region, and a central portion is the light transmissive non-light emitting portion. The optical fingerprint authentication device according to any one of the above.

  10. The organic electroluminescence panel has a plurality of organic electroluminescence elements arranged in parallel in a stripe shape, and has the light-transmissive non-light emitting portion between the stripe-shaped organic electroluminescence elements. The optical fingerprint authentication device according to any one of items 1 to 8, characterized in that:

  11. The organic electroluminescence panel has a plurality of independent organic electroluminescence elements in an outer peripheral region, and has the light transmissive non-light emitting portion in a central portion. The optical fingerprint authentication device according to any one of the above.

  12 The optical fingerprint authentication device according to any one of Items 1 to 11, wherein the organic electroluminescence panel emits light having a wavelength in a visible light region.

  13. The optical fingerprint authentication device according to any one of Items 1 to 11, wherein the organic electroluminescence panel emits light having a wavelength in an infrared region.

  According to the present invention, it is possible to provide an optical fingerprint authentication device that has an organic electroluminescence element of various shapes according to the purpose as an illumination light source and can be manufactured at low cost with a thin and simple configuration. .

  The technical features of the optical fingerprint authentication apparatus having the configuration defined in the present invention and the mechanism of the effects thereof are presumed as follows.

  In the conventional optical fingerprint authentication device, as described above, an LED has been widely used as the light irradiation light source, but the LED has an advantage in terms of the light source life, but from the light emission principle, the structure However, it has a problem that it becomes thicker or it is extremely difficult to process into various shapes.

  As a method for solving such a problem, the present inventor has found that the above-mentioned problems can be solved by applying to a light source an organic electroluminescence panel having an organic EL element.

  That is, an organic EL element having an arbitrary light emission pattern can be formed by utilizing the characteristics of the organic EL element as a thin film light emitting element and the formation method (for example, chemical vapor deposition method or wet coating method). It is possible to design a fingerprint information reading unit having detection areas of various shapes required for a fingerprint authentication apparatus, and it is possible to cope with fingerprint authentication apparatuses having various needs. In addition, by realizing a uniform light irradiation light source having various shapes, the recognition rate of the fingerprint authentication device can be improved.

  In addition, an image sensor having at least an organic photoelectric conversion layer is used as an image sensor for detecting diffused light from a fingerprint portion of a finger to be authenticated. More specifically, a counter electrode, an organic photoelectric conversion layer, a pixel electrode In addition, by applying a photoelectric conversion type image sensor composed of a thin film transistor, an excellent photoelectric conversion efficiency with respect to diffused light from the fingerprint portion is exhibited, and an organic EL is formed when forming a fingerprint information reading portion. Organic photoelectric conversion of image sensor and organic functional layer unit constituting the organic EL element and the counter electrode of the anode and the image sensor constituting the element, the cathode constituting the organic EL element and the counter electrode of the image sensor, or the organic EL element Each layer can be made of the same material, simplifying the manufacturing process, and materials Sharing enables simultaneous formation of a single step, it is possible to realize a reduction in manufacturing cost.

Schematic which shows an example of the whole structure of the fingerprint information reading part which comprises the optical fingerprint authentication apparatus of this invention Schematic which shows another example of the whole structure of the fingerprint information reading part which comprises the optical fingerprint authentication apparatus of this invention. Schematic sectional view showing an example of the configuration of an organic EL element applicable to the present invention Schematic sectional view showing an example of the configuration of an image sensor applicable to the present invention Schematic sectional view showing an example of a configuration of a fingerprint information reading unit provided with an organic EL panel of a top emission type applicable to the present invention (Embodiment 1) Schematic sectional view showing another example of a configuration of a fingerprint information reading unit provided with an organic EL panel of an upper surface (cathode side) emission method applicable to the present invention (Embodiment 2) Schematic sectional view showing another example of a configuration of a fingerprint information reading unit provided with an organic EL panel of an upper surface (cathode side) emission method applicable to the present invention (Embodiment 3) Schematic sectional view showing another example of the configuration of the fingerprint information reading unit provided with the organic EL panel of the upper surface (cathode side) emission method applicable to the present invention (Embodiment 4) Schematic sectional view showing another example of a configuration of a fingerprint information reading unit provided with an organic EL panel of an upper surface (cathode side) light emission method applicable to the present invention (Embodiment 5) Schematic sectional view showing an example of a fingerprint information reading unit provided with a lower surface (anode side) light emitting type organic EL panel applicable to the present invention (Embodiment 6) Schematic sectional view showing another example of a configuration of a fingerprint information reading unit provided with a bottom surface (anode side) light emitting type organic EL panel applicable to the present invention (Embodiment 7) Schematic sectional view showing another example of a configuration of a fingerprint information reading unit provided with a bottom surface (anode side) light emitting type organic EL panel applicable to the present invention (Embodiment 8) Schematic sectional view showing another example of a configuration of a fingerprint information reading unit provided with an organic EL panel of a lower surface (anode side) light emission method applicable to the present invention (Embodiment 9) Schematic sectional view showing another example of the configuration of the fingerprint information reading unit provided with the lower surface (anode side) light emitting type organic EL panel applicable to the present invention (Embodiment 10) Schematic configuration diagram showing an example of the configuration of an optical fingerprint authentication device provided with a fingerprint information reading unit having an organic EL panel provided with a donut-shaped organic EL element (Embodiment 11) Schematic configuration diagram showing an example of another configuration of an optical fingerprint authentication device including a fingerprint information reading unit having an organic EL panel including a donut-shaped organic EL element (Embodiment 12) Schematic configuration diagram showing an example of the configuration of an optical fingerprint authentication apparatus having a fingerprint information reading unit having an organic EL panel having a rectangular organic EL element (Embodiment 13) Schematic configuration diagram showing an example of the configuration of an optical fingerprint authentication device including a fingerprint information reading unit having an organic EL panel in which strip-shaped organic EL elements are arranged on four sides (Embodiment 14) Schematic configuration diagram showing an example of the configuration of an optical fingerprint authentication device provided with a fingerprint information reading unit having a circular organic EL panel provided with a rectangular non-light emitting unit in the center (Embodiment 15) Schematic configuration diagram showing an example of a configuration of an optical fingerprint authentication device including a fingerprint information reading unit having an organic EL panel in which a plurality of strip-shaped organic EL elements are arranged in parallel in a stripe shape (Embodiment 16) Schematic configuration diagram showing an example of the configuration of an expression fingerprint authentication device having an optical fingerprint information reading unit having an organic EL panel in which a plurality of organic EL elements are arranged on the outer peripheral portion apart from each other (Embodiment 17) Schematic diagram showing an example of an array pattern of pixel electrodes in an image sensor

  The optical fingerprint authentication device of the present invention is an optical fingerprint authentication device that has at least a light source and an image sensor, and detects diffused light by the image sensor, and has an organic electroluminescence panel as the light source, The organic electroluminescence panel is composed of a light emitting part region constituted by an organic electroluminescence element and a light transmissive non-light emitting part, and the image sensor has at least an organic photoelectric conversion layer, and the image sensor The organic electroluminescence panel includes a non-light-emitting portion or a fingerprint information reading portion disposed adjacent to the non-light-emitting portion. This feature is a technical feature common to or corresponding to the claimed invention.

  As an embodiment of the present invention, from the viewpoint that the effects of the present invention can be more manifested, it is possible to improve the photoelectric conversion efficiency by comprising at least a counter electrode, an organic photoelectric conversion layer, a pixel electrode, and a thin film transistor as an image sensor. This is preferable in that an excellent image sensor can be realized.

  In addition, the configuration in which the image sensor is disposed on the light emitting surface side of the organic EL panel or on the side opposite to the light emitting surface can be adapted to light emitting methods corresponding to various uses and can be applied. This is a preferred embodiment from the viewpoint of widening the width.

  In addition, at least one of the counter electrode, the organic photoelectric conversion layer, and the pixel electrode constituting the image sensor is a non-light emitting portion of the organic EL panel and is formed on the same plane as the organic EL element, or the counter electrode, The configuration in which the organic photoelectric conversion layer and the pixel electrode are all formed on the same plane as the organic EL element makes it possible to correspond to a light emitting method according to various uses, and the range of applicable options is widened. At the same time, the materials for forming the anode, organic functional layer, and cathode of the organic EL element and the materials for forming the counter electrode, the organic photoelectric conversion layer, and the pixel electrode can be used in common, thereby reducing manufacturing costs and simplifying the manufacturing process. It is preferable in that it can be achieved.

  The organic EL element has an organic functional layer unit between a pair of opposed electrodes, and one of the electrodes is a light transmissive electrode and the other is a non-light transmissive electrode. This is preferable from the standpoint that irradiation light can be applied to the fingerprint detection unit and the light receiving sensitivity of the image sensor can be increased.

  Moreover, as a transparent electrode which comprises an organic EL element, it is preferable to comprise with an oxide semiconductor or a metal or alloy of a thin film at the point which can obtain the electrode excellent in high light transmittance and electroconductivity.

  In addition, forming a light transmissive electrode in the light transmissive non-light-emitting portion or having a light transmissive electrode and an organic functional layer unit makes the manufacturing method of the optical fingerprint authentication device easier. It is preferable from a viewpoint that can be made.

  In addition, as an arrangement pattern of the organic EL elements in the organic EL panel constituting the optical fingerprint authentication device of the present invention, an organic EL element having a continuous configuration is arranged in the outer peripheral area, and a light-transmitting non-light-emitting element is provided in the center. Part forming method, or arranging a plurality of stripe organic EL elements in parallel and forming a light-transmitting non-light emitting part between the organic EL elements, and a plurality of independent organic EL elements in the outer peripheral region Is a preferable form from the viewpoint of efficiently obtaining optical information necessary for fingerprint authentication.

  In addition, it is preferable that the organic electroluminescence panel emits light having a wavelength in the visible light region, or emits light having a wavelength in the infrared region, from the viewpoint of expanding the usage.

  In the following description, the “organic EL panel” as used in the present invention refers to a panel composed of a light emitting part formed of an organic EL element and a light transmissive non-light emitting part on the same plane.

  The “organic EL element” as used in the present invention is a surface light source that irradiates a specimen surface (specifically, a fingerprint surface) with light for fingerprint authentication, and is mainly a pair of opposing surfaces on a transparent substrate. Controls mainly the transport of electrons or holes between a pair of electrodes and a pair of electrodes having light transmission properties (anode and cathode), or a light transmission electrode and a non-light transmission electrode. It has an organic functional layer unit composed of a carrier transporting functional layer and a light emitting layer, and further has a sealing member provided thereon. However, description and description of the sealing member may be omitted for convenience of explanation. In the following description, description and description of a control circuit and wiring for controlling light emission of the organic EL element are omitted.

  The “organic functional layer unit” in the present invention will be described later with reference to FIG. 2. As an example, the first carrier transporting functional layer group 1 (for example, a hole injection layer, a hole is formed on a substrate. A transport layer, a light emitting layer containing a phosphorescent compound, and the like, and a second carrier transport function layer group 2 (for example, a hole blocking layer, an electron transport layer, an electron injection layer, and the like) are stacked. Refers to the configuration.

  In the present invention, the “light emitting area” refers to a region where all of the anode, the organic functional layer unit, and the cathode exist in the layer thickness direction.

  The “anode” in the present invention is an electrode to which (+) is applied as a voltage, and may be referred to as “anode” or “first electrode”. The “cathode” is an electrode to which (−) is applied as a voltage, and is sometimes referred to as “cathode” or “second electrode”.

  In addition, the “image sensor” in the present invention refers to a photoelectric conversion type image sensor having a function of detecting diffused light from a fingerprint portion, and mainly includes a counter electrode, an organic photoelectric conversion layer, a pixel electrode, and a thin film. A transistor (abbreviation: TFT) is used.

  In addition, the photoelectric conversion element (abbreviation: PED, Photoelectric device) referred to in the present invention means an element mainly composed of a counter electrode, an organic photoelectric conversion layer, and a pixel electrode.

  Further, the “light transmittance” in the present invention means that the light transmittance at a wavelength of 550 nm is 60% or more, preferably 70% or more, and more preferably 80% or more. “Non-light-transmitting” means that the light transmittance at a wavelength of 550 nm is 40% or less, preferably 30% or less, and more preferably 20% or less.

  Hereinafter, constituent elements of the present invention and modes for carrying out the present invention will be described in detail with reference to the drawings. In addition, in this application, "-" showing a numerical range is used by the meaning containing the numerical value described before and behind that as a lower limit and an upper limit. In the description of each figure, the number described in parentheses at the end of the constituent element represents the code in each figure.

<Basic configuration of optical fingerprint authentication device>
The optical fingerprint authentication apparatus of the present invention mainly has a light source and an image sensor, and an organic EL panel composed of a light emitting part region constituted by an organic EL element and a light transmissive non-light emitting part as a light source. And a fingerprint information reading unit having a configuration in which a photoelectric conversion type image sensor is disposed in the non-light-emitting unit or at a position adjacent to the non-light-emitting unit.

  1A and 1B are schematic views showing an example of the overall configuration of a fingerprint reading unit constituting the optical fingerprint authentication device of the present invention.

  FIG. 1A shows a light-transmitting non-light emitting part (12) of an organic EL panel (P) as a fingerprint information reading part, and a photoelectric conversion element (PED) which is an image sensor (S) on the same plane as the organic EL element. An example in which is arranged is shown.

  In FIG. 1A, a fingerprint information reading unit (100) of an optical fingerprint authentication device includes an organic EL panel (P) composed of an organic EL element (OLED) and a light-transmitting non-light emitting unit (12), and the light. A photoelectric conversion element (PED), which is a constituent member of the image sensor (S), is disposed inside the transmissive non-light-emitting portion (12). Further, a TFT unit (53) composed of a base material and TFT is disposed at the lower part thereof, thereby constituting an image sensor (S). Reference numeral 11 denotes a glass substrate for holding a finger (F) surface to be touched.

  In FIG. 1B, the fingerprint information reading unit (100) of the optical fingerprint authentication apparatus includes an organic EL panel (P) composed of an organic EL element (OLED) and a light-transmitting non-light emitting unit (12), In the lower part, a photoelectric conversion element (PED) which is a constituent member of the image sensor (S) and a TFT unit (53) composed of a base material and a TFT are laminated to constitute an image sensor (S). .

  1A and 1B shows a method of emitting light (L1) on the upper surface side, and light (L1) from an organic EL element (OLED) which is a light source constituting the organic EL panel (P). ), And irradiates the fingerprint surface of the finger (F) with the light reflected from the fingerprint surface (L2, also referred to as an optical signal) to transmit light of the organic EL panel (P). The optical information is read by the image sensor (S) through the non-light emitting portion (12), and the image information read by the image sensor (S) is analyzed and stored, although not shown in the figure. The fingerprint is authenticated by comparing with the fingerprint information (registered).

<Each component of fingerprint reader>
Next, details of the configuration of the organic EL element and the image sensor constituting the optical fingerprint authentication device of the present invention will be described.

<< Organic EL element >>
[Basic structure of organic EL element]
Hereinafter, the basic configuration of the organic EL element constituting the organic EL panel according to the present invention will be described with reference to the drawings.

  FIG. 2 is a schematic cross-sectional view showing a basic configuration including an organic functional layer unit of an organic EL element applicable to the present invention.

  The organic EL element (OLED) according to the present invention shown in FIG. 2 is an organic functional layer unit including a light emitting layer on a transparent substrate (1) having light transparency, for example, a glass substrate or a flexible resin substrate. A structure in which (U) is laminated is shown.

  In FIG. 2, the example which has formed the gas barrier layer (2) on the transparent base material (1) which has a light transmittance is shown. On the gas barrier layer (2), an anode (3) is formed as a first electrode, and a first carrier transporting functional layer group composed of, for example, a hole injection layer, a hole transport layer, etc. 1 (4), a light emitting layer (5), and a second carrier transporting functional layer group 2 (6) composed of, for example, an electron transporting layer, an electron injecting layer, and the like are sequentially laminated to form an organic functional layer unit (U ). Further, a cathode (7) is provided as a second electrode on the organic functional layer unit (U). And the sealing board | substrate (10) which has the contact bonding layer (8) and a gas barrier layer (9) is arrange | positioned by the structure which coat | covers the said laminated body whole, and comprises an organic EL element (OLED). Yes.

  In the configuration shown in FIG. 2, for example, when the lower surface side is a light emitting surface, the anode (3) as the first electrode is a transparent electrode having the light transmittance defined above, and the cathode ( 7) is a non-light-transmissive electrode, which is an example of a method of performing light irradiation (L1) on the finger (F) from the finger surface side where the anode (3) is disposed.

  As shown in FIG. 2, the light emitting area (13) means that the anode (3), the organic functional layer unit (U), particularly the light emitting layer (5), and the cathode (7) are all on the same plane. An area that exists.

[Components of organic EL element]
First, the detail of the main component of the organic EL element which comprises the organic EL panel of this invention is demonstrated.

  In the organic EL element (OLED) having optical transparency according to the present invention, as described in FIG. 2, the optical transparency as the first electrode is formed on the transparent substrate (1) having the gas barrier layer (2). Next, a carrier transport function layer group 1 (4) composed of, for example, a hole injection layer, a hole transport layer, and the like, and a light emitting layer (5), for example, an electron transport layer, an electron injection layer The light emitting region is constituted by the organic functional layer group (U) in which the carrier transporting functional layer group 2 (6) composed of, for example, is laminated. Further, a sealing substrate (10) having a cathode (7) as a second electrode, a sealing adhesive layer (8), and a gas barrier layer (9) is provided on the upper part.

  Below, the typical example of a structure of an organic EL element is shown.

(I) Light-transmitting anode (3) / organic functional layer unit (U) [carrier transport functional layer group 1 (4: hole injection transport layer) / light emitting layer (5) / carrier transport functional layer group 2 ( 6: Electron injection transport layer)] / Non-light-transmissive cathode (7)
(Ii) Light-transmitting anode (3) / organic functional layer unit (U) [carrier transport functional layer group 1 (4: hole injection transport layer) / light emitting layer (5) / carrier transport functional layer group 2 ( 6: hole blocking layer / electron injecting and transporting layer)] / non-light-transmitting cathode (7)
(Iii) Light-transmitting anode (3) / organic functional layer unit (U) [carrier transport functional layer group 1 (4: hole injection transport layer / electron blocking layer) / light emitting layer (5) / carrier transport function Layer group 2 (6: hole blocking layer / electron injecting and transporting layer)] / non-light-transmitting cathode (7)
(Iv) Light-transmitting anode (3) / organic functional layer unit (U) [carrier transport functional layer group 1 (4: hole injection layer / hole transport layer) / light emitting layer (5) / carrier transport function Layer group 2 (6: electron transport layer / electron injection layer)] / non-light-transmitting cathode (7)
(V) Light-transmitting anode (3) / organic functional layer unit (U) [carrier transport functional layer group 1 (4: hole injection layer / hole transport layer) / light emitting layer (5) / carrier transport function Layer group 2 (6: hole blocking layer / electron transport layer / electron injection layer)] / non-light-transmitting cathode (7)
(Vi) Light-transmitting anode (3) / organic functional layer unit (U) [carrier transport functional layer group 1 (4: hole injection layer / hole transport layer / electron blocking layer) / light emitting layer (5) / Carrier transport functional layer group 2 (6: hole blocking layer / electron transport layer / electron injection layer)] / non-light transmissive cathode (7)
In the configuration described in (i) to (vi) above, the anode (3) is described as being light transmissive and the cathode (7) is non-light transmissive. However, in the method of emitting light on the upper surface side, the configuration is reversed. The anode (3) is made non-light transmissive and the cathode (7) is made light transmissive. Further, if necessary, both the anode (3) and the cathode (7) may be constituted by light transmissive electrodes.

  Further, a non-light emitting intermediate layer may be provided between the light emitting layers. The intermediate layer may be a charge generation layer or a multi-photon unit configuration.

  Regarding the outline of the organic EL element applicable to the present invention, for example, JP2013-157634A, JP2013-168552A, JP2013-177361A, JP2013-187221A, JP JP 2013-191644 A, JP 2013-191804 A, JP 2013-225678 A, JP 2013-235994 A, JP 2013-243234 A, JP 2013-243236 A, JP 2013-2013 A. JP 242366, JP 2013-243371, JP 2013-245179, JP 2014-003249, JP 2014-003299, JP 2014-013910, JP 2014-014933 Gazette, JP, 2014-017494, A It can be mentioned configurations described in.

  A tandem organic EL element can also be used. Specific examples of the tandem type include, for example, US Pat. No. 6,337,492, US Pat. No. 7,420,203, US Pat. No. 7,473,923, US Pat. No. 6,872,472, US Pat. No. 6,107,734, US Pat. No. 6,337,492, International Publication No. 2005 / 009087, JP 2006-228712 A, JP 2006-24791 A, JP 2006-49393 A, JP 2006-49394 A, JP 2006-49396 A, JP 2011-96679 A. JP, 2005-340187, JP 4711424, JP 3496681, JP 3884564, JP No. 211169, JP 2010-192719 A, JP 2009-076929, JP 2008-078414, JP 2007-059848, JP 2003-272860, JP 2003-045676. Examples of the element configuration and constituent materials described in the publication, International Publication No. 2005/094130, and the like are included, but the present invention is not limited thereto.

  Furthermore, each layer which comprises an organic EL element is demonstrated.

(Transparent substrate)
The transparent substrate (1) applicable to the organic EL element (OLED) is not particularly limited as long as it is a light-transmitting substrate, and examples thereof include glass and plastic.

  Examples of the light-transmitting substrate (1) applicable to the present invention include glass, quartz, and a resin substrate. More preferably, it is a flexible resin base material from the viewpoint of imparting flexibility to the organic EL element.

  Examples of the resin material constituting the resin base material applicable to the present invention include polyesters such as polyethylene terephthalate (abbreviation: PET), polyethylene naphthalate (abbreviation: PEN), polyethylene, polypropylene, cellophane, cellulose diacetate, and cellulose. Cellulose esters such as triacetate (abbreviation: TAC), cellulose acetate butyrate, cellulose acetate propionate (abbreviation: CAP), cellulose acetate phthalate, cellulose nitrate, and their derivatives, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol , Syndiotactic polystyrene, polycarbonate (abbreviation: PC), norbornene resin, polymethylpentene, polyetherketone, polyimide, poly -Tersulfone (abbreviation: PES), polyphenylene sulfide, polysulfones, polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic and polyarylates, Arton (trade name, manufactured by JSR) and Appel (Trade name, manufactured by Mitsui Chemicals, Inc.) and the like.

  Among these resin base materials, in terms of cost and availability, polyethylene terephthalate (abbreviation: PET), polybutylene terephthalate, polyethylene naphthalate (abbreviation: PEN), polycarbonate (abbreviation: PC), and the like are used as constituent materials. A film is preferably used as a resin substrate having flexibility.

  The resin base material may be an unstretched film or a stretched film.

  The resin base material applicable to the present invention can be manufactured by a conventionally known general film forming method. For example, an unstretched resin base material that is substantially amorphous and not oriented can be produced by melting a resin as a material with an extruder, extruding it with an annular die or a T-die, and quenching. In addition, the unstretched resin base material is transported in the direction of the resin base material (vertical axis direction) by a known method such as uniaxial stretching, tenter sequential biaxial stretching, tenter simultaneous biaxial stretching, tubular simultaneous biaxial stretching, or the like. , MD direction), or a stretched resin substrate can be produced by stretching in a direction perpendicular to the conveying direction of the resin substrate (horizontal axis direction, TD direction). Although the draw ratio in this case can be suitably selected according to the resin used as the raw material of the resin base material, it is preferably in the range of 2 to 10 times in the vertical axis direction and the horizontal axis direction.

  The thickness of the resin substrate is preferably a thin resin substrate in the range of 3 to 200 μm, more preferably in the range of 10 to 150 μm, and particularly preferably in the range of 20 to 120 μm. Is within.

  Further, as a glass substrate applicable as a light-transmitting substrate according to the present invention, soda lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, quartz Etc.

[First electrode: Anode]
The anode constituting the organic EL element is preferably a light transmissive electrode. For example, the anode is preferably composed of an oxide semiconductor or a metal or alloy of a thin film. For example, Ag, Au, etc. A metal or an alloy containing a metal as a main component, CuI, indium-tin composite oxide (ITO), or an oxide semiconductor such as SnO ₂ or ZnO can be given.

  As a method for forming the anode, for example, a vacuum evaporation method (for example, resistance heating evaporation method, electron beam evaporation method, ion plating method, ion beam evaporation method, etc.), sputtering method, reactive sputtering method, molecular beam epitaxy method, Examples include plasma polymerization, atmospheric pressure plasma polymerization, plasma CVD, laser CVD, and thermal CVD.

  When the light-transmitting anode is composed mainly of silver, the purity of silver is preferably 99% or more. Further, palladium (Pd), copper (Cu), gold (Au), or the like may be added to ensure the stability of silver.

  The light-transmitting anode is a layer composed mainly of silver. Specifically, the anode may be composed of silver alone or an alloy containing silver (Ag). . Examples of such an alloy include silver-magnesium (Ag-Mg), silver-copper (Ag-Cu), silver-palladium (Ag-Pd), silver-palladium-copper (Ag-Pd-Cu), silver -Indium (Ag-In) etc. are mentioned.

  Among the constituent materials constituting the anode, the anode constituting the organic EL device according to the present invention is composed of silver as a main component, and an anode having a light transmittance having a thickness in the range of 2 to 20 nm. The thickness is preferably in the range of 4 to 12 nm. A thickness of 20 nm or less is preferable because the absorption component and reflection component of the light-transmitting anode are kept low and high light transmittance is maintained.

  The layer composed mainly of silver in the present invention means that the silver content in the light-transmitting anode is 60% by mass or more, preferably the silver content is 80% by mass. More preferably, the silver content is 90% by mass or more, and particularly preferably the silver content is 98% by mass or more. Further, “light transmittance” in the anode having light transmittance according to the present invention means that the light transmittance at a wavelength of 550 nm is 50% or more.

  In the light-transmitting anode, the layer composed mainly of silver may be divided into a plurality of layers as necessary.

  In the present invention, when the anode is a light-transmitting anode composed mainly of silver, the lower portion is formed from the viewpoint of improving the uniformity of the silver film of the light-transmitting anode to be formed. It is preferable to provide an underlayer. The underlayer is not particularly limited as long as it can suppress the aggregation of silver when forming an anode made of silver or an alloy containing silver as a main component. For example, an organic layer having a nitrogen atom or a sulfur atom A layer containing a compound is preferred, and a method of forming a light-transmitting anode on the underlayer is a preferred embodiment.

[Organic functional layer unit]
(Light emitting layer)
In the light emitting layer (5) constituting the organic EL element (OLED), a phosphorescent light emitting compound or a fluorescent compound can be used as the light emitting material. In the present invention, in particular, a phosphorescent light emitting compound is used as the light emitting material. The contained structure is preferable.

  This light emitting layer is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer and holes injected from the hole transport layer, and the light emitting portion is in the layer of the light emitting layer. Alternatively, it may be the interface between the light emitting layer and the adjacent layer.

  As such a light emitting layer, there is no restriction | limiting in particular in the structure, if the light emitting material contained satisfy | fills the light emission requirements. Moreover, there may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer between the light emitting layers.

  The total thickness of the light emitting layers is preferably in the range of 1 to 100 nm, and more preferably in the range of 1 to 30 nm because a lower driving voltage can be obtained. In addition, the sum total of the thickness of a light emitting layer is the thickness also including the said intermediate | middle layer, when a nonluminous intermediate | middle layer exists between light emitting layers.

  For the light emitting layer as described above, a light emitting material and a host compound to be described later may be used by publicly known methods such as a vacuum deposition method, a spin coating method, a casting method, an LB method (Langmuir-Blodget, Langmuir Broadgett method), and an ink jet method. Can be formed.

  In the light emitting layer, a plurality of light emitting materials may be mixed, and a phosphorescent light emitting material and a fluorescent light emitting material (also referred to as a fluorescent dopant or a fluorescent compound) may be mixed and used in the same light emitting layer. The structure of the light-emitting layer preferably includes a host compound (also referred to as a light-emitting host) and a light-emitting material (also referred to as a light-emitting dopant compound), and emits light from the light-emitting material.

<Host compound>
As the host compound contained in the light emitting layer, a compound having a phosphorescence quantum yield of phosphorescence emission at room temperature (25 ° C.) of less than 0.1 is preferable. Further, the phosphorescence quantum yield is preferably less than 0.01. Moreover, it is preferable that the volume ratio in the layer is 50% or more among the compounds contained in a light emitting layer.

  As the host compound, a known host compound may be used alone, or a plurality of types of host compounds may be used. By using a plurality of types of host compounds, it is possible to adjust the movement of charges, and the efficiency of the organic electroluminescent device can be improved. In addition, by using a plurality of kinds of light emitting materials described later, it is possible to mix different light emission, thereby obtaining an arbitrary light emission color.

  The host compound used in the light emitting layer may be a conventionally known low molecular compound or a high molecular compound having a repeating unit, and a low molecular compound having a polymerizable group such as a vinyl group or an epoxy group (evaporation polymerizable light emitting host). )

  Examples of the host compound applicable to the present invention include, for example, JP-A Nos. 2001-257076, 2001-357777, 2002-8860, 2002-43056, 2002-105445, 2002-352957, 2002-231453, 2002-234888, 2002-260861, 2002-305083, US Patent Application Publication No. 2005/0112407, US Patent Application Publication No. 2009/0030202, International Publication No. 2001/039234, International Publication No. 2008/056746, International Publication No. 2005/089025, International Publication No. 2007/063754, International Publication No. 2005/030900, International Publication 2009 No. 086028, WO 2012/023947, can be mentioned JP 2007-254297, JP-European compounds described in Japanese Patent No. 2034538 Pat like.

<Light emitting material>
As the light-emitting material that can be used in the present invention, a phosphorescent compound (also referred to as a phosphorescent compound, a phosphorescent material, or a phosphorescent dopant) and a fluorescent compound (both a fluorescent compound or a fluorescent material) are used. In particular, it is preferable to use a phosphorescent compound from the viewpoint of obtaining high luminous efficiency.

<Phosphorescent compound>
A phosphorescent compound is a compound in which light emission from an excited triplet is observed. Specifically, it is a compound that emits phosphorescence at room temperature (25 ° C.), and the phosphorescence quantum yield is 0 at 25 ° C. A preferred phosphorescence quantum yield is 0.1 or more, although it is defined as 0.01 or more compounds.

  The phosphorescence quantum yield can be measured by the method described in Spectroscopic II, page 398 (1992 edition, Maruzen) of Experimental Chemistry Course 4 of the 4th edition. The phosphorescence quantum yield in the solution can be measured using various solvents, but when using a phosphorescent compound in the present invention, the phosphorescence quantum yield is 0.01 or more in any solvent. Should be achieved.

  The phosphorescent compound can be appropriately selected from known compounds used for the light emitting layer of a general organic EL device, but preferably contains a group 8-10 metal in the periodic table of elements. More preferred are iridium compounds, more preferred are iridium compounds, osmium compounds, platinum compounds (platinum complex compounds) or rare earth complexes, and most preferred are iridium compounds.

  In the present invention, at least one light emitting layer may contain two or more phosphorescent compounds, and the concentration ratio of the phosphorescent compound in the light emitting layer varies in the thickness direction of the light emitting layer. It may be an embodiment.

  Specific examples of known phosphorescent compounds that can be used in the present invention include compounds described in the following documents.

  Nature 395, 151 (1998), Appl. Phys. Lett. 78, 1622 (2001), Adv. Mater. 19, 739 (2007), Chem. Mater. 17, 3532 (2005), Adv. Mater. 17, 1059 (2005), International Publication No. 2009/100991, International Publication No. 2008/101842, International Publication No. 2003/040257, US Patent Application Publication No. 2006/835469, US Patent Application Publication No. 2006 /. Examples thereof include compounds described in US Patent No. 0202194, US Patent Application Publication No. 2007/0087321, US Patent Application Publication No. 2005/0244673, and the like.

  Inorg. Chem. 40, 1704 (2001), Chem. Mater. 16, 2480 (2004), Adv. Mater. 16, 2003 (2004), Angew. Chem. lnt. Ed. 2006, 45, 7800, Appl. Phys. Lett. 86, 153505 (2005), Chem. Lett. 34, 592 (2005), Chem. Commun. 2906 (2005), Inorg. Chem. 42, 1248 (2003), International Publication No. 2009/050290, International Publication No. 2009/000673, US Pat. No. 7,332,232, US Patent Application Publication No. 2009/0039776, US Pat. No. 6,687,266. US Patent Application Publication No. 2006/0008670, US Patent Application Publication No. 2008/0015355, US Patent No. 7396598, US Patent Application Publication No. 2003/0138667, US Patent No. 7090928. The compounds described in the description and the like can be mentioned.

  Also, Angew. Chem. lnt. Ed. 47, 1 (2008), Chem. Mater. 18, 5119 (2006), Inorg. Chem. 46, 4308 (2007), Organometallics 23, 3745 (2004), Appl. Phys. Lett. 74, 1361 (1999), International Publication No. 2006/056418, International Publication No. 2005/123873, International Publication No. 2005/123873, International Publication No. 2006/082742, US Patent Application Publication No. 2005/0260441. U.S. Pat. No. 7,534,505, U.S. Patent Application Publication No. 2007/0190359, U.S. Pat. No. 7,338,722, U.S. Pat. No. 7,279,704, U.S. Patent Application Publication No. 2006/103874, etc. Mention may also be made of the compounds described.

  Furthermore, International Publication No. 2005/076380, International Publication No. 2008/140115, International Publication No. 2011/134013, International Publication No. 2010/086089, International Publication No. 2012/020327, International Publication No. 2011/051404. Further, compounds described in International Publication No. 2011/073149, JP2009-114086, JP2003-81988, JP2002-363552, and the like can also be mentioned.

  In the present invention, preferred phosphorescent compounds include organometallic complexes having Ir as a central metal. More preferably, a complex containing at least one coordination mode of a metal-carbon bond, a metal-nitrogen bond, a metal-oxygen bond, or a metal-sulfur bond is preferable.

  The phosphorescent compound described above (also referred to as a phosphorescent metal complex) is described in, for example, Organic Letter, vol. 16, 2579-2581 (2001), Inorganic Chemistry, Vol. 30, No. 8, 1685-1687 (1991), J. Am. Am. Chem. Soc. , 123, 4304 (2001), Inorganic Chemistry, Vol. 40, No. 7, 1704-1711 (2001), Inorganic Chemistry, Vol. 41, No. 12, 3055-3066 (2002) , New Journal of Chemistry. 26, 1171 (2002), European Journal of Organic Chemistry, 4, 695-709 (2004), and methods disclosed in the references described in these documents. Can be synthesized.

<Fluorescent compound>
Fluorescent compounds include coumarin dyes, pyran dyes, cyanine dyes, croconium dyes, squalium dyes, oxobenzanthracene dyes, fluorescein dyes, rhodamine dyes, pyrylium dyes, perylene dyes, stilbene dyes. And dyes, polythiophene dyes, and rare earth complex phosphors.

[Carrier transport functional group]
Next, a charge injection layer, a hole transport layer, an electron transport layer, and a blocking layer will be described in this order as representative examples of the layers constituting the carrier transport functional layer group.

(Charge injection layer)
The charge injection layer is a layer provided between the electrode and the light emitting layer in order to lower the driving voltage and improve the light emission luminance. “The organic EL element and its industrialization front line (November 30, 1998, NT. The details are described in Chapter 2, “Electrode Material” (pages 123 to 166) of the second edition of “S. Co., Ltd.”, and there are a hole injection layer and an electron injection layer.

  In general, the charge injection layer is present between the anode and the light emitting layer or the hole transport layer in the case of a hole injection layer, and between the cathode and the light emitting layer or the electron transport layer in the case of an electron injection layer. However, the present invention is characterized in that the charge injection layer is disposed adjacent to the light-transmitting electrode. When used in an intermediate electrode, it is sufficient that at least one of the adjacent electron injection layer and hole injection layer satisfies the requirements of the present invention.

  The hole injection layer is a layer disposed adjacent to the anode, which is a light-transmitting electrode, in order to lower the driving voltage and improve the light emission luminance. The “organic EL element and its industrialization front line (1998 November The details are described in Volume 2, Chapter 2, “Electrode Materials” (pp. 123-166) of “Month 30th, issued by NTS Corporation”.

  The details of the hole injection layer are also described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069, etc. Examples of the material used for the hole injection layer include: , Porphyrin derivatives, phthalocyanine derivatives, oxazole derivatives, oxadiazole derivatives, triazole derivatives, imidazole derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, hydrazone derivatives, stilbene derivatives, polyarylalkane derivatives, triarylamine derivatives, carbazole derivatives, Inrocarbazole derivatives, isoindole derivatives, acene derivatives such as anthracene and naphthalene, fluorene derivatives, fluorenone derivatives, polyvinylcarbazole, aromatic amines introduced into the main chain or side chain Material or oligomer, polysilane, a conductive polymer or oligomer (e.g., PEDOT (polyethylenedioxythiophene) / PSS (polystyrene sulfonic acid), aniline copolymers, polyaniline, polythiophene, etc.) and the like can be mentioned.

  Examples of the triarylamine derivative include benzidine type represented by α-NPD (4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl), and MTDATA (4,4 ′, 4 ″). Examples include a starburst type represented by -tris [N- (3-methylphenyl) -N-phenylamino] triphenylamine) and a compound having fluorene or anthracene in the triarylamine-linked core.

  In addition, hexaazatriphenylene derivatives such as those described in JP-A-2003-519432 and JP-A-2006-135145 can also be used as a hole transport material.

  The electron injection layer is a layer provided between the cathode and the light emitting layer in order to lower the driving voltage and improve the light emission luminance. Is provided adjacent to the light-transmitting electrode, and “Organic EL element and its forefront of industrialization” (issued on November 30, 1998 by NTT) It is described in detail in “Electrode Material” (pages 123 to 166).

  The details of the electron injection layer are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like. Specific examples of materials preferably used for the electron injection layer are as follows. Metals represented by strontium and aluminum, alkali metal compounds represented by lithium fluoride, sodium fluoride, potassium fluoride, etc., alkali metal halide layers represented by magnesium fluoride, calcium fluoride, etc. Examples thereof include an alkaline earth metal compound layer typified by magnesium, a metal oxide typified by molybdenum oxide and aluminum oxide, and a metal complex typified by lithium 8-hydroxyquinolate (Liq). Moreover, when the electrode which has the light transmittance in this invention is a cathode, organic materials, such as a metal complex, are used especially suitably. The electron injection layer is desirably a very thin film, and although depending on the constituent material, the layer thickness is preferably in the range of 1 nm to 10 μm.

(Hole transport layer)
The hole transport layer is made of a hole transport material having a function of transporting holes. In a broad sense, the hole injection layer and the electron blocking layer also have the function of a hole transport layer. The hole transport layer can be provided as a single layer or a plurality of layers.

  The hole transport material has any of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples include stilbene derivatives, silazane derivatives, aniline copolymers, conductive polymer oligomers, and thiophene oligomers.

  As the hole transport material, those described above can be used, but porphyrin compounds, aromatic tertiary amine compounds and styrylamine compounds can be used, and in particular, aromatic tertiary amine compounds can be used. preferable.

  Representative examples of aromatic tertiary amine compounds and styrylamine compounds include N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl, N, N′-diphenyl-N, N′— Bis (3-methylphenyl)-[1,1′-biphenyl] -4,4′-diamine (abbreviation: TPD), 2,2-bis (4-di-p-tolylaminophenyl) propane, 1,1 -Bis (4-di-p-tolylaminophenyl) cyclohexane, N, N, N ', N'-tetra-p-tolyl-4,4'-diaminobiphenyl, 1,1-bis (4-di-p -Tolylaminophenyl) -4-phenylcyclohexane, bis (4-dimethylamino-2-methylphenyl) phenylmethane, bis (4-di-p-tolylaminophenyl) phenylmethane, N, N'-diphenyl-N, '-Di (4-methoxyphenyl) -4,4'-diaminobiphenyl, N, N, N', N'-tetraphenyl-4,4'-diaminodiphenyl ether, 4,4'-bis (diphenylamino) c Audriphenyl, N, N, N-tri (p-tolyl) amine, 4- (di-p-tolylamino) -4 '-[4- (di-p-tolylamino) styryl] stilbene, 4-N, N- Examples include diphenylamino- (2-diphenylvinyl) benzene, 3-methoxy-4′-N, N-diphenylaminostilbenzene, N-phenylcarbazole and the like.

  For the hole transport layer, known methods such as vacuum deposition, spin coating, casting, printing including ink jet, and LB (Langmuir Brodget, Langmuir Broadgett) are used as the hole transport material. Thus, it can be formed by thinning. Although there is no restriction | limiting in particular about the layer thickness of a positive hole transport layer, Usually, about 5 nm-5 micrometers, Preferably it is the range of 5-200 nm. The hole transport layer may have a single layer structure composed of one or more of the above materials.

  Moreover, p property can also be made high by doping the material of a positive hole transport layer with an impurity. Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175 and J.P. Appl. Phys. 95, 5773 (2004), and the like.

  Thus, it is preferable to increase the p property of the hole transport layer because an element with lower power consumption can be manufactured.

(Electron transport layer)
The electron transport layer is made of a material having a function of transporting electrons, and in a broad sense, an electron injection layer and a hole blocking layer are also included in the electron transport layer. The electron transport layer can be provided as a single layer structure or a stacked structure of a plurality of layers.

  In the electron transport layer having a single-layer structure and the electron transport layer having a multilayer structure, an electron transport material (also serving as a hole blocking material) constituting a layer portion adjacent to the light emitting layer is used as an electron transporting material. What is necessary is just to have the function to transmit. As such a material, any one of conventionally known compounds can be selected and used. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives. Furthermore, in the above oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron-withdrawing group can also be used as a material for the electron transport layer. it can. Furthermore, a polymer material in which these materials are introduced into a polymer chain, or a polymer material having these materials as a polymer main chain can also be used.

In addition, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (abbreviation: Alq ₃ ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8- Quinolinol) aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (abbreviation: Znq), etc. and the central metal of these metal complexes A metal complex replaced with In, Mg, Cu, Ca, Sn, Ga, or Pb can also be used as a material for the electron transport layer.

  The electron transport layer can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an inkjet method, and an LB method. Although there is no restriction | limiting in particular about the layer thickness of an electron carrying layer, Usually, about 5 nm-5 micrometers, Preferably it exists in the range of 5-200 nm. The electron transport layer may have a single structure composed of one or more of the above materials.

(Blocking layer)
Examples of the blocking layer include a hole blocking layer and an electron blocking layer. In addition to the constituent layers of the carrier transport functional layer unit 3 described above, the blocking layer is a layer provided as necessary. For example, it is described in JP-A Nos. 11-204258, 11-204359, and “Organic EL elements and their forefront of industrialization” (issued by NTT, Inc. on November 30, 1998). Hole blocking (hole block) layer and the like.

  The hole blocking layer has a function of an electron transport layer in a broad sense. The hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved. Moreover, the structure of an electron carrying layer can be used as a hole-blocking layer as needed. The hole blocking layer is preferably provided adjacent to the light emitting layer.

  On the other hand, the electron blocking layer has a function of a hole transport layer in a broad sense. The electron blocking layer is made of a material that has the ability to transport holes and has a very small ability to transport electrons. By blocking holes while transporting holes, the probability of recombination of electrons and holes is improved. Can be made. Moreover, the structure of a positive hole transport layer can be used as an electron blocking layer as needed. The layer thickness of the hole blocking layer applied to the present invention is preferably in the range of 3 to 100 nm, more preferably in the range of 5 to 30 nm.

[Second electrode: cathode]
The cathode according to the present invention is a light-transmitting electrode that functions to supply holes to the carrier transporting functional layer group and the light-emitting layer, and is a metal, alloy, organic or inorganic conductive compound, or a mixture thereof. For example, gold, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, ITO, ZnO, TiO ₂ and An oxide semiconductor such as SnO ₂ can be given.

  The cathode can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering. The sheet resistance as the second electrode is several hundred Ω / sq. The following is preferable, and the film thickness is usually selected in the range of 5 nm to 5 μm, preferably 5 to 200 nm.

[Other components]
<Gas barrier layer>
By forming a gas permeable gas barrier layer (2) on one side or both sides of the transparent substrate (1), at least on the entire surface where the anode (first electrode) is formed, moisture, oxygen, etc. Intrusion of components that cause deterioration of the constituent materials of the organic EL element can be suppressed.

The gas barrier layer (2) may be not only an inorganic material film but also a film made of a composite material with an organic material or a hybrid film obtained by laminating these films. As the performance of the gas barrier layer (2), water vapor permeability (environmental conditions: 25 ± 0.5 ° C., relative humidity (90 ± 2)%) in accordance with JIS (Japanese Industrial Standards) -K7129 (2008). About 0.01 g / m ² · 24 h or less, oxygen permeability according to JIS-K7126 (2006) is about 0.01 ml / m ² · 24 h · atm] or less, and electrical resistivity is 1 × 10 ¹² Ω · cm As described above, an insulating film having gas barrier properties and light transmittance such that the light transmittance is about 80% or more in the visible light region is preferable.

  As a material for forming the gas barrier layer (2), any material can be used as long as it can suppress the intrusion of a gas such as water or oxygen into the organic EL element, which causes deterioration of the organic EL element. .

  For example, it can be composed of a coating made of an inorganic material such as silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, aluminum oxide, aluminum nitride, titanium oxide, zirconium oxide, niobium oxide, molybdenum oxide, Preferably, the main raw material is a silicon compound such as silicon nitride or silicon oxide.

  As a method for forming the gas barrier layer, a conventionally known film forming method can be appropriately selected and used. For example, a vacuum deposition method, a sputtering method, a magnetron sputtering method, a molecular beam epitaxy method, a cluster ion beam method, an ion plate method can be used. Coating method, plasma polymerization method, atmospheric pressure plasma polymerization method (see JP 2004-68143 A), plasma CVD (Chemical Vapor Deposition) method, laser CVD method, thermal CVD method, ALD (atomic layer deposition) method, A wet coating method using polysilazane or the like can also be applied.

<Sealing material>
In the organic EL panel (P) shown in FIG. 2, an example in which a sealing member is further formed on the organic EL panel (P) including the organic EL element (OLED) formed up to the cathode (7). Is shown.

  As shown in FIG. 2, a sealing member (10) having a gas barrier layer (9) on the outermost surface after the sealing adhesive (8) is applied to the entire surface of the organic EL element (OLED). Seal with.

  As a sealing member, it should just be arrange | positioned so that the display area | region of an organic EL element may be covered, and it may be concave plate shape or flat plate shape. Further, transparency and electrical insulation are not particularly limited.

  Specifically, a glass substrate, a resin substrate, a resin film, a metal film (metal foil) having flexibility, and the like can be given. Examples of the glass substrate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the resin substrate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone.

  As the sealing adhesive, polyurethane-based, polyester-based, epoxy-based, acrylic-based adhesives, and the like can be used. You may use a hardening | curing agent together as needed. A hot melt lamination method, an extrusion lamination method and a coextrusion lamination method can also be used, but a dry lamination method is preferred.

In the present invention, as the sealing member, a resin substrate and a crow substrate can be preferably used from the viewpoint of reducing the thickness of the organic EL element. Further, the resin substrate has a water vapor transmission rate of 1 × 10 ⁻³ g / m ² .multidot.m at a temperature of 25 ± 0.5 ° C. and a relative humidity of 90 ± 2% RH measured by a method according to JIS K 7129-1992. The oxygen permeability measured by a method according to JIS K 7126-1987 is preferably 1 × 10 ⁻³ ml / m ² · 24 h · atm (1 atm is 1.01325 × 10 ⁵ a Pa) equal to or lower than a temperature of 25 ± 0.5 ° C., water vapor permeability at a relative humidity of 90 ± 2% RH is preferably not more than ^{1 × 10 -3 g / m 2} · 24h. In order to satisfy this condition, it is a preferable embodiment to provide a gas barrier layer similar to that described for the base material.

  In the gap between the sealing member and the display area (light emitting area) of the organic EL element, an inert gas such as nitrogen or argon, or an inert liquid such as fluorocarbon or silicon oil is injected in the gas phase and liquid phase. You can also Further, the gap between the sealing member and the display area of the organic EL element can be evacuated, or a hygroscopic compound can be sealed in the gap.

  In addition, the organic functional layer unit in the organic EL element is completely covered, and the anode (3) which is the first electrode and the cathode (7) which is the second electrode in the organic EL element are exposed, and the light is exposed. A sealing film can also be provided over a permeable substrate.

<Image sensor>
[Image sensor configuration]
The image sensor according to the present invention is a photoelectric conversion system having at least an organic photoelectric conversion layer, and is preferably composed of at least a counter electrode, an organic photoelectric conversion layer, a pixel electrode, and a thin film transistor (TFT).

  FIG. 3 is a schematic cross-sectional view showing an example of the configuration of an image sensor applicable to the present invention.

  In FIG. 3, the diffused light (L2) from the fingerprint portion is irradiated from the upper surface side (finger surface side). In the image sensor (S) according to the present invention, the counter electrode (52), the organic photoelectric conversion layer (51), and the pixel electrode (54) are arranged from the surface side where the diffused light (L2) reaches, and the photoelectric conversion element ( PED). Below the photoelectric conversion element (PED), a TFT (56) is disposed at a position facing the pixel electrode (54), and a connection portion (55) is connected therebetween. At this time, the pixel electrode (54), the connecting portion (55), and the TFT (56) are arranged in the insulating layer (57), and a base material (58) is provided below the insulating layer (57). In the present invention, a configuration including the connection portion (55), the TFT (56), and the insulating layer (57) is referred to as a TFT unit (53). If necessary, the base material (58) may be described as a constituent element of the TFT unit (53).

  Specific examples of the configuration of the optical image sensor (S) including the organic photoelectric conversion layer applicable to the present invention include, for example, JP 2008-067034, JP 2009-207062, and JP JP2011-142318, JP2011-222949, JP2012-095992, JP2012-227364, JP2013-026483, JP2013-084789, JP2013. Reference is made to description contents and constituent requirements of organic photoelectric conversion elements, optical sensors and the like disclosed in Japanese Patent No. 093353, Japanese Patent Application Laid-Open No. 2014-022525, Japanese Patent Application Laid-Open No. 2014-060315, Japanese Patent Application Laid-Open No. 2015-015415, and the like. be able to.

  Hereinafter, details of the main components of the image sensor will be further described.

[Counter electrode]
The counter electrode (52) constituting the image sensor is an electrode facing the pixel electrode (54), and is provided so as to cover the organic photoelectric conversion layer (51). An optical functional layer including an organic photoelectric conversion layer (51) is provided between the pixel electrode (54) and the counter electrode (52).

  In the configuration in which the reflected light (L2) is incident from the surface of the counter electrode (52T) as shown in FIGS. 4 to 8 described later, the counter electrode (52T) causes the light to enter the organic photoelectric conversion layer (51). The conductive material is transparent to the reflected light (L2). The counter electrode (52T) serves as a counter electrode voltage supply unit that applies a predetermined voltage to the counter electrode (52T) via a connection unit (not shown) disposed outside the organic photoelectric conversion layer (51). Connected (not shown).

  The light transmissive counter electrode (52T) is preferably composed of a transparent conductive film, and examples thereof include metals, metal oxides, metal nitrides, metal borides, organic conductive compounds, and mixtures thereof. Specific examples include tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO), indium tungsten oxide (IWO), conductive metal oxides such as titanium oxide, and metal nitrides such as TiN. Metal, gold (Au), platinum (Pt), silver (Ag), chromium (Cr), nickel (Ni), aluminum (Al), etc., and a mixture or laminate of these metals and conductive metal oxides Products, organic conductive compounds such as polyaniline, polythiophene, and polypyrrole, and laminates of these with ITO. Particularly preferable materials for the transparent conductive film are ITO, IZO, tin oxide, antimony-doped tin oxide (ATO), fluorine-doped tin oxide (FTO), zinc oxide, antimony-doped zinc oxide (AZO), gallium-doped zinc oxide ( Any material of GZO) can be mentioned.

  In the configuration in which the counter electrode (52) is disposed at the lowest position with respect to the incident surface of the reflected light (L2) in the bottom emission method as shown in FIGS. 9 to 13 described later, the counter electrode (52) May be light transmissive or non-light transmissive.

  The sheet resistance of the counter electrode (52, 52T) is 10 kΩ / sq. When the signal readout circuit (not shown) is a CMOS type. Or less, more preferably 1 kΩ / sq. It is as follows. In the case of a CCD type, 1 kΩ / sq. Or less, more preferably 0.1 kΩ / sq. It is as follows.

  When the counter electrode (52T) is light transmissive, the light transmittance is preferably 60% or more, more preferably 80% or more, more preferably 90% or more, more preferably 95% or more, at the visible light wavelength. It is.

  Of the signal charges generated in the organic photoelectric conversion layer (51), holes are collected in the pixel electrode (54) and electrons are collected in the counter electrode (52). A voltage higher than (54) is applied. In order to achieve both high sensitivity and low dark current, the voltage applied to the counter electrode (54) is about 5 to 20V.

  Further, the counter electrode (52) in the image sensor (S) according to the present invention may have the same configuration as the anode (3) that constitutes the above-described organic EL element, as illustrated in FIGS. Good. Moreover, it is good also as a structure same as the cathode (7) which comprises the above-mentioned organic EL element so that it may illustrate in FIGS. 6-8 and FIGS. 11-13 mentioned later.

[Organic photoelectric conversion layer]
The organic photoelectric conversion layer (51) includes an organic photoelectric organic material, and has a function of converting into signal charges corresponding to the amount of received light. It is preferable that the organic photoelectric conversion layer (51) contains an organic photoelectric conversion material in that a desired spectral sensitivity can be easily obtained.

  In addition, the organic photoelectric conversion layer (51) preferably has a configuration including a p-type organic semiconductor and an n-type organic semiconductor, among organic materials.

  It is preferable in that exciton dissociation efficiency can be increased by joining a p-type organic semiconductor and an n-type organic semiconductor to form a donor / acceptor interface. For this reason, the organic photoelectric conversion layer (51) of the structure which joined the p-type organic semiconductor and the n-type organic semiconductor can express high photoelectric conversion efficiency. In particular, an organic photoelectric conversion layer (51) in which a p-type organic semiconductor and an n-type organic semiconductor are mixed is preferable because the junction interface between the two increases and the photoelectric conversion efficiency is improved.

  The p-type organic semiconductor is a donor organic semiconductor. Specific examples of the compound include compounds that are mainly represented by hole-transporting organic compounds and have a property of easily donating electrons. More specifically, an organic compound having a smaller ionization potential when two organic materials are used in contact with each other. Therefore, any organic compound can be used as the donor organic semiconductor as long as it is an electron-donating organic compound.

  Specific examples of the p-type organic semiconductor include, for example, triarylamine compounds, benzidine compounds, pyrazoline compounds, styrylamine compounds, hydrazone compounds, triphenylmethane compounds, carbazole compounds, polysilane compounds, thiophene compounds, phthalocyanine compounds, cyanine compounds, Merocyanine compounds, oxonol compounds, polyamine compounds, indole compounds, pyrrole compounds, pyrazole compounds, polyarylene compounds, condensed aromatic carbocyclic compounds (eg, naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, fluoranthene Derivatives), and metal complexes having nitrogen-containing heterocyclic compounds as ligands. In addition, it is not restricted to the compound described above, If it is an organic compound with an ionization potential smaller than the organic compound used as an n-type (acceptor property) compound, it can be used as a donor organic semiconductor.

  An n-type organic semiconductor (compound) is an acceptor semiconductor, and refers to a compound having a property of easily accepting electrons, typified by an electron transporting compound. More specifically, an n-type semiconductor refers to a compound having a higher electron affinity when two compounds are used in contact with each other. Therefore, any compound can be used as the acceptor compound as long as it is an electron-accepting compound.

  The n-type semiconductor is not particularly limited. For example, a condensed aromatic carbocyclic compound (for example, naphthalene derivative, anthracene derivative, phenanthrene derivative, tetracene derivative, pyrene derivative, perylene derivative, fluoranthene derivative, etc.), nitrogen atom, oxygen atom A 5- to 7-membered heterocyclic compound containing a sulfur atom (for example, pyridine, pyrazine, pyrimidine, pyridazine, triazine, quinoline, quinoxaline, quinazoline, phthalazine, cinnoline, isoquinoline, pteridine, acridine, phenazine, phenanthroline, tetrazole, pyrazole , Imidazole, thiazole, oxazole, indazole, benzimidazole, benzotriazole, benzoxazole, benzothiazole, carbazole, purine, triazolopyrida , Triazolopyrimidine, tetrazaindene, oxadiazole, imidazopyridine, pyralidine, pyrrolopyridine, thiadiazolopyridine, dibenzazepine, tribenzazepine, etc.), polyarylene compounds, fluorene compounds, cyclopentadiene compounds, silyl compounds, Examples thereof include a metal complex having a nitrogen heterocyclic compound as a ligand. However, the present invention is not limited thereto, and as described above, any compound having an electron affinity higher than that of the compound used as the p-type (donor property) compound can be used as the acceptor semiconductor.

  An organic dye can also be used as the p-type organic semiconductor or the n-type organic semiconductor. Examples of applicable organic dyes include cyanine dyes, styryl dyes, hemicyanine dyes, merocyanine dyes (including zero methine merocyanine (simple merocyanine)), trinuclear merocyanine dyes, tetranuclear merocyanine dyes, rhodacyanine dyes, complex cyanine dyes, Complex merocyanine dye, allopolar dye, oxonol dye, hemioxonol dye, squalium dye, croconium dye, azamethine dye, coumarin dye, arylidene dye, anthraquinone dye, triphenylmethane dye, azo dye, azomethine dye, spiro compound, metallocene dye, Fluorenone dye, fulgide dye, perylene dye, perinone dye, phenazine dye, phenothiazine dye, quinone dye, diphenylmethane dye, polyene dye, Lysine dye, acridinone dye, diphenylamine dye, quinacridone dye, quinophthalone dye, phenoxazine dye, phthaloperylene dye, diketopyrrolopyrrole dye, dioxane dye, porphyrin dye, chlorophyll dye, phthalocyanine dye, metal complex dye, condensed aromatic carbocyclic system Examples of the dye include naphthalene derivatives, anthracene derivatives, phenanthrene derivatives, tetracene derivatives, pyrene derivatives, perylene derivatives, and fluoranthene derivatives.

As the n-type organic semiconductor, it is preferable to use fullerene or a fullerene derivative excellent in electron transportability. Fullerene C ₆₀ , fullerene C ₇₀ , fullerene C ₇₆ , fullerene C ₇₈ , fullerene C ₈₀ , fullerene C ₈₂ , fullerene C ₈₄ , fullerene C ₉₀ , fullerene C ₉₆ , fullerene C ₂₄₀ , fullerene ₅₄₀ , mixed fullerene Represents a fullerene nanotube, and a fullerene derivative represents a compound having a substituent added thereto.

  When the organic photoelectric conversion layer (51) contains fullerene or a fullerene derivative, electrons generated by photoelectric conversion can be quickly transported to the pixel electrode (54) or the counter electrode (52) via the fullerene molecule or fullerene derivative molecule. . When fullerene molecules or fullerene derivative molecules are connected to form an electron path, the electron transport property is improved and high-speed response of the photoelectric conversion element can be obtained.

  In the organic photoelectric conversion layer (51), when a triarylamine compound described in, for example, Japanese Patent No. 4213832 is used as a p-type organic semiconductor mixed with fullerene or a fullerene derivative, a high SN ratio of the photoelectric conversion element Is particularly preferable.

  As the organic photoelectric conversion layer (51) according to the present invention, as described in FIGS. 7, 8, 12, and 13, which will be described later, an organic functional layer unit (U) constituting an organic EL element, and its configuration This is one of the preferable forms from the viewpoint that the manufacturing cost of the fingerprint information reading unit can be reduced.

[Pixel electrode]
The pixel electrode (54) generates charges generated in the organic photoelectric conversion layer (51) between the pixel electrode (54) and the counter electrode (52) facing the pixel electrode (54) by irradiation of reflected light (L2) from the fingerprint surface. It is an electrode for electric charge collection for collecting the. As shown in FIG. 3, the pixel electrode (54) is connected to the TFT portion (56) via the connection portion (55). The TFT portion (56), which is this signal readout circuit, is provided on the base material (58) corresponding to each of the plurality of pixel electrodes (54), and is collected by the corresponding pixel electrode (54). A signal corresponding to the electric charge is read out. The electric charge collected by each pixel electrode (54) becomes a signal in the TFT section (56) of each corresponding pixel, and an image is synthesized from signals acquired from a plurality of pixels.

  The pixel electrode (54) is formed on the insulating layer (57) by sputtering or the like and then etched through a mask to form a predetermined pattern. The pixel electrode (54) of the organic photoelectric conversion layer (51) is formed. Before the formation, the interlayer insulating film is exposed between the pixel electrodes (54).

  The material for forming the pixel electrode (54) is not particularly limited as long as it is a conductive material generally used as an electrode. Metal, metal oxide, metal nitride, metal boride, organic conductive compound, these And the like. Specific examples include tin oxide, zinc oxide, indium oxide, indium tin oxide (ITO), indium zinc oxide (IZO), indium tungsten oxide (IWO), conductive metal oxides such as titanium oxide, and titanium oxynitride (TiNxOx). ), Metal nitrides such as titanium nitride (TiN), metals such as gold (Au), platinum (Pt), silver (Ag), chromium (Cr), nickel (Ni), aluminum (Al), and these metals And conductive metal oxide mixtures or laminates, organic conductive compounds such as polyaniline, polythiophene, and polypyrrole, and laminates of these with ITO. Particularly preferred as the material for the pixel electrode (54) is any one of titanium oxynitride, titanium nitride, molybdenum nitride, tantalum nitride, and tungsten nitride.

  The size of the pixel electrode (54) is preferably 3 μm or less, and more preferably 2 μm or less. More preferably, it is 1.5 μm or less. The gap between the pixel electrodes (54) (the gap between the pixel electrodes) is preferably 0.3 μm or less, more preferably 0.25 μm or less, and further preferably 0.2 μm or less.

  Further, the pixel electrode (54) in the image sensor (S) according to the present invention may have the same configuration as the anode (3) that constitutes the organic EL element described above, as illustrated in FIGS. Good. In the case of a top emission method as shown in FIGS. 4 to 8 described later, the pixel electrode (54) may be either light transmissive or non-light transmissive. In the bottom emission method as shown in FIGS. 9 to 13 described later, the pixel electrode (54) is light transmissive.

[Thin layer transistor: TFT]
Details of the thin layer transistor (TFT) applicable to the present invention are disclosed in, for example, JP-A-6-085260, JP-A-2006-108622, RE-Table 2011-039853, JP-A-2009-207062. The detailed description about TFT is omitted here.

  As a typical TFT, for example, a gate electrode integrated with an address wiring is formed on an insulating substrate by sputtering, and a gate insulating film made of a silicon oxide film, amorphous silicon (a A semiconductor layer made of -Si) and a channel protective film made of a silicon nitride film are sequentially laminated. Subsequently, an n-type amorphous silicon film (n + a-Si film) doped with phosphorus is formed by plasma CVD on the channel protective film and the semiconductor layer. After the pattern formation of the transistor active portion and the pixel electrode made of ITO, molybdenum and aluminum are continuously formed on the n + a-Si film as the data wiring and source / drain electrodes. Thereafter, a TFT can be formed by removing the n + a-Si film above the channel.

〔Base material〕
Although there is no restriction | limiting in particular as a base material (58) applicable to this invention, It is preferable to use a resin base material or a thin film glass base material.

  Examples of the resin material constituting the resin base material include the same resin base materials that can be applied to the organic EL element described above. For example, polyethylene terephthalate (abbreviation: PET), polyethylene naphthalate (abbreviation: PEN). Polyesters such as polyethylene, polypropylene, cellophane, cellulose diacetate, cellulose triacetate (abbreviation: TAC), cellulose acetate butyrate, cellulose acetate propionate (abbreviation: CAP), cellulose esters such as cellulose acetate phthalate and cellulose nitrate. And derivatives thereof, polyvinylidene chloride, polyvinyl alcohol, polyethylene vinyl alcohol, syndiotactic polystyrene, polycarbonate (abbreviation: PC), norbornene resin, poly Tylpentene, polyetherketone, polyimide, polyethersulfone (abbreviation: PES), polyphenylene sulfide, polysulfones, polyetherimide, polyetherketoneimide, polyamide, fluororesin, nylon, polymethylmethacrylate, acrylic and polyarylates, arton (Trade name, manufactured by JSR) and cycloolefin resins such as Apel (trade name, manufactured by Mitsui Chemicals) and the like.

  Among these resin base materials, in terms of cost and availability, polyethylene terephthalate (abbreviation: PET), polybutylene terephthalate, polyethylene naphthalate (abbreviation: PEN), polycarbonate (abbreviation: PC), and the like are used as constituent materials. The film is preferably used as a resin base material having flexibility.

  The thickness of the resin substrate is not particularly limited because it is appropriately selected depending on the application, but is typically in the range of 1 to 800 μm, and preferably in the range of 10 to 200 μm.

  Moreover, what was shape | molded by various shaping | molding methods can be used as thin film glass which comprises an image sensor. For example, a thin film glass formed by a rollout method, a redraw method, a downdraw method, a float method, or the like can be used.

  The average thickness of the thin film glass is preferably in the range of 5 to 200 μm, and more preferably in the range of 5 to 100 μm. When the thickness is less than 5 μm, handling such as conveyance is difficult, and when the thickness exceeds 200 μm, the value of the thin film is diminished.

  The thin film glass is not particularly limited as long as it is a multicomponent oxide glass. For example, soda lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, quartz, An alkali glass etc. can be mentioned.

  Moreover, when comprising a fingerprint information reading part with an organic electroluminescent panel, as shown in FIGS. 4-13, as a base material (58) which comprises an image sensor, the gas barrier layer which comprises an organic EL element ( You may combine with the transparent base material (1) which has 2).

  The thickness of the resin substrate is preferably a thin resin substrate in the range of 3 to 200 μm, more preferably in the range of 10 to 150 μm, and particularly preferably in the range of 20 to 120 μm. Is within.

[Other component layers]
(Electronic blocking layer)
The electron blocking layer is a layer for suppressing injection of electrons from the pixel electrode (54) to the organic photoelectric conversion layer (51), and has a function of suppressing dark current.

  The electron blocking layer may be composed of a plurality of layers, for example, may be composed of a first blocking layer and a second blocking layer. As described above, by forming the electron blocking layer into a plurality of layers, an interface is formed between the first blocking layer and the second blocking layer, and discontinuity occurs in the intermediate level existing in each layer. It becomes difficult for the charge carrier to move through the level, and dark current can be suppressed. The electron blocking layer may be a single layer.

  An electron donating organic material can be used for the electron blocking layer. Specifically, in a low molecular material, N, N′-bis (3-methylphenyl)-(1,1′-biphenyl) -4,4′-diamine (TPD) or 4,4′-bis [N Aromatic diamine compounds such as-(naphthyl) -N-phenyl-amino] biphenyl (α-NPD), oxazole, oxadiazole, triazole, imidazole, imidazolone, stilbene derivative, pyrazoline derivative, tetrahydroimidazole, polyarylalkane, butadiene 4,4 ', 4 "-tris (N- (3-methylphenyl) N-phenylamino) triphenylamine (m-MTDATA), porphine, tetraphenylporphine copper, phthalocyanine, copper phthalocyanine, titanium phthalocyanine oxide, etc. Porphyrin compounds, triazole derivatives, oxadi Use sol derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, annealed amine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, silazane derivatives, etc. In the polymer material, a polymer such as phenylene vinylene, fluorene, carbazole, indole, pyrene, pyrrole, picoline, thiophene, acetylene, diacetylene, or a derivative thereof can be used. Any compound having sufficient hole transportability can be used.

  An inorganic material can also be used as the electron blocking layer. In general, since an inorganic material has a dielectric constant larger than that of an organic material, when it is used for the electron blocking layer 51, a large voltage is applied to the photoelectric conversion layer, and the photoelectric conversion efficiency can be increased. Materials that can be used as an electron blocking layer include calcium oxide, chromium oxide, chromium oxide copper, manganese oxide, cobalt oxide, nickel oxide, copper oxide, gallium copper oxide, strontium copper oxide, niobium oxide, molybdenum oxide, indium copper oxide, and oxide. Examples include indium silver and iridium oxide.

<Specific configuration of fingerprint information reading unit>
Next, a specific configuration of the fingerprint information reading unit according to the present invention will be described.

  The fingerprint information reading unit according to the present invention includes a light emitting part region constituted by an organic EL element, a light transmissive non-light emitting part region, and an image sensor (S).

  Hereinafter, a specific configuration of the fingerprint information reading unit including the light emitting unit region (light emitting area), the organic EL panel including the non-light emitting unit, and the image sensor will be described.

[Top emission method]
First, Embodiments 1 to 5 of the top emission method will be described with reference to the drawings. In addition, in the following display of each electrode, it has indicated that the electrode which attached | subjected T after each code | symbol is a light transmissive electrode.

Embodiment 1 Configuration Example 1 of Fingerprint Information Reading Unit
FIG. 4 is a schematic cross-sectional view (embodiment 1) showing an example of the configuration of a fingerprint information reading unit of an optical fingerprint authentication apparatus including an organic EL panel of a top emission type applicable to the present invention.

  The fingerprint information reading unit (100) shown in FIG. 4 has an upper surface on the finger surface side as a specimen, and irradiates the finger surface (not shown) with irradiation light (L1) on the upper surface side from the organic EL element (OLED). In this method, the reflected light (L2) from the finger surface is read by the image sensor (S) to perform fingerprint authentication.

  The fingerprint information reading unit (100) shown in FIG. 4 is configured such that the image sensor (S) according to the present invention is independently installed on the surface opposite to the light emitting surface of the organic EL panel (P). An example is shown.

  In FIG. 4, an organic EL panel (P) disposed on the upper surface side has the configuration of the organic EL element (OLED) described in FIG. 2 and is an image sensor (58) carried by a base material (58). S) Organic EL elements (OLEDs) are arranged in a separated state to form independent light emitting areas (13). Specifically, a unit of the image sensor (S) is formed on the base material (58), and the anode (3), the organic functional layer unit (U), the cathode (7T), and the like are formed thereon, for example. A plurality of organic EL elements (OLED) are arranged. The organic EL element (OLED) is sealed with a sealing adhesive layer (8), and is sealed with a sealing substrate (10) having, for example, a gas barrier layer (9) on the outermost surface.

  In the configuration shown in FIG. 4, the area where all of the anode (3), the organic functional layer unit (U) and the cathode (7) are present is the light emitting area (13), and the area between them is a light-transmitting non-transmitting area. It is a light emission part (12).

  An image sensor (S) for receiving reflected light is disposed below the organic EL panel (P). As shown in FIG. 4, the counter electrode (52T), organic photoelectric conversion is performed from the light receiving surface side. The layer (51) and the pixel electrode (54) constitute a photoelectric conversion element (PED). Below that, a TFT unit (53) in which TFTs (56, not shown) are arranged in an insulating layer (57, not shown) is provided. In the method of emitting light on the upper surface side shown in FIG. 4, at least the cathode (7T) constituting the organic EL element (OLED) and the counter electrode (52T) constituting the image sensor (S) are transparent electrodes, and the organic EL element The anode (3) of (OLED) and the pixel electrode (54) of the image sensor (S) may be light transmissive or non-light transmissive.

[Embodiment 2: Configuration example 2 of fingerprint information reading unit]
FIG. 5 is a schematic cross-sectional view (embodiment 2) showing another example of the configuration of the fingerprint information reading unit provided with the top (cathode side) light emitting type organic EL panel applicable to the present invention.

  The fingerprint information reading unit (100) having the configuration shown in FIG. 5 is an example of a top emission type, and the counter electrode (52T) constituting the image sensor (S) is different from the configuration of the first embodiment described in FIG. It is an example formed in the non-light-emitting part (12) of the organic EL panel.

  That is, among the counter electrode (52T), the organic photoelectric conversion layer (51), and the pixel electrode (54) constituting the image sensor (S) according to the present invention, the counter electrode (52T) is the organic EL panel (P). The non-light-emitting part (12) shows an example formed on the same plane as the organic EL element (OLED).

  In the second embodiment, as in the first embodiment, the cathode (7T) and the counter electrode (52T) located on the light emission side are both configured as light transmissive electrodes. In the second embodiment, the counter electrode (52T) ) And an electrode having the same configuration as the anode (3) constituting the organic EL element (OLED), and in such a configuration, the anode (3T) and the counter electrode (52T) By making both the light transmissive electrodes of the same configuration, the manufacturing cost can be reduced by sharing the formation process. When both the anode (3T) and the cathode (7T) are light transmissive electrodes, the organic EL element is a double-sided light emission method.

[Embodiment 3: Configuration example 3 of fingerprint information reading unit]
FIG. 6 is a schematic sectional view (embodiment 3) showing another example of the configuration of the fingerprint information reading unit provided with the top (cathode side) light emitting type organic EL panel applicable to the present invention.

  The fingerprint information reading unit (100) having the configuration shown in FIG. 6 is an example of a top emission type, and the counter electrode (52T) forming the image sensor (S) is different from the configuration of the first embodiment described in FIG. It is an example formed in the non-light-emitting part (12) of the organic EL panel.

  That is, among the counter electrode, the organic photoelectric conversion layer, and the pixel electrode constituting the image sensor according to the present invention, the counter electrode is a non-light emitting portion of the organic EL panel and is formed on the same plane as the organic EL element. An example is shown.

  In the third embodiment, as in the first embodiment, the cathode (7T) and the counter electrode (52T) positioned on the light emitting side are both configured as light transmissive electrodes. In the third embodiment, the counter electrode (52T ) And the cathode (7T) constituting the organic EL element (OLED) are shown as an electrode having the same configuration, and both the cathode (7T) and the counter electrode (52T) are the light-transmitting electrodes having the same configuration. Thus, the manufacturing cost can be reduced by sharing the formation process.

[Embodiment 4: Configuration example 4 of fingerprint information reading unit]
FIG. 7 is a schematic cross-sectional view (Embodiment 4) showing another example of the configuration of the fingerprint information reading unit provided with the top (cathode side) light emitting organic EL panel applicable to the present invention.

  The fingerprint information reading unit (100) having the configuration shown in FIG. 7 is an example of a top emission type, and in addition to the configuration of the third embodiment described in FIG. 6, an organic photoelectric conversion layer ( 51) is formed in the non-light emitting part (12) of the organic EL panel.

  That is, of the counter electrode, the organic photoelectric conversion layer, and the pixel electrode that constitute the image sensor according to the present invention, two components of the counter electrode and the organic photoelectric conversion layer are the non-light emitting portion of the organic EL panel, and the organic EL element. Is an example formed on the same plane.

  In the fourth embodiment, as in the third embodiment, the counter electrode (52T) is composed of a light transmissive electrode similar to the cathode (7T) located on the light emitting side, and the organic photoelectric conversion layer (51) is further formed. In a preferred mode, the organic functional layer unit (U) that constitutes the organic EL element (OLED) is formed in the same configuration as the organic EL element (OLED) in that the manufacturing cost can be reduced due to the common formation process. is there.

[Embodiment 5: Configuration example 5 of fingerprint information reading unit]
FIG. 8 is a schematic cross-sectional view (Embodiment 5) showing another example of the configuration of the fingerprint information reading unit provided with the top (cathode side) light emitting organic EL panel applicable to the present invention.

  The fingerprint information reading unit (100) having the configuration shown in FIG. 8 is an example of a top emission type, and an organic photoelectric conversion layer that forms the image sensor (S) with respect to the configuration of each embodiment described in FIGS. This is an example in which all the constituent elements of (51) are formed in the non-light emitting portion (12) of the organic EL panel.

  That is, the counter electrode (52T), the organic photoelectric conversion layer (51), and the pixel electrode (54) constituting the image sensor (S) according to the present invention are all non-light emitting portions (12) of the organic EL panel (P). Thus, a configuration example formed on the same plane as the organic EL element (OLED) is shown.

  Especially in this invention, as shown in FIG. 8, as a structure of an image sensor (S), a counter electrode (52T) is made into the same structure as the cathode (7T) of an organic EL element (OLED), and an organic photoelectric converting layer ( 51) is the same configuration as the organic functional layer unit (U) of the organic EL element (OLED), and the pixel electrode (54) is the same as the anode (3) of the organic EL element (OLED). Forming such forming materials in common is a preferable aspect in that the manufacturing is easy and the manufacturing cost can be reduced by the common formation process.

[Bottom emission method]
Next, bottom surface emission type embodiments 6 to 10 will be described with reference to the drawings.

[Embodiment 6: Configuration example 6 of fingerprint information reading unit]
FIG. 9 is a schematic cross-sectional view (embodiment 6) showing an example of a fingerprint information reading unit provided with a bottom surface (anode side) light emitting type organic EL panel applicable to the present invention.

  The organic EL panel (P) having the configuration shown in FIG. 9 has a lower surface on the finger surface side that is a specimen, and irradiates light (L1) to the lower surface side of the organic EL element (OLED) with respect to the finger surface (not shown). This is a method for performing fingerprint authentication by irradiating and reading reflected light (L2) from the finger surface with an image sensor (S).

  The basic configuration of the fingerprint information reading unit (100) is the same as that of the first embodiment described above with reference to FIG. 4, but since it is a bottom emission type, the anode (3T) constituting the organic EL element (OLED) The pixel electrode (54T) constituting the image sensor (S) is formed of a light transmissive electrode. At this time, the cathode (7) constituting the organic EL element (OLED) and the corresponding electrode (52) constituting the image sensor (S) may be light transmissive or non-light transmissive.

[Embodiment 7: Configuration example 7 of fingerprint information reading unit]
FIG. 10 is a schematic cross-sectional view (Embodiment 7) showing another example of the configuration of the fingerprint information reading unit including the lower surface (anode side) light emitting type organic EL panel applicable to the present invention.

  The basic configuration of the fingerprint information reading unit (100) having the configuration shown in FIG. 10 is the same as that of the second embodiment described above with reference to FIG. 5. However, since it is a bottom emission type, an organic EL element (OLED) is used. The anode (3T) that constitutes the pixel electrode (54T) that constitutes the image sensor (S) is composed of a light transmissive electrode.

  In the configuration shown in FIG. 10, as in FIG. 5, an example in which the counter electrode (52T) and the anode (3T) constituting the organic EL element (OLED) are the same configuration as the light transmissive electrode is shown. By adopting such a configuration, both the anode (3T) and the counter electrode (52T) are made of light-transmitting electrodes having the same configuration, so that the manufacturing cost can be reduced by sharing the formation process. . At this time, the cathode (7) constituting the organic EL element (OLED) may be light transmissive or non-light transmissive.

[Eighth embodiment: configuration example 8 of fingerprint information reading unit]
FIG. 11 is a schematic cross-sectional view (Embodiment 8) showing another example of the configuration of the fingerprint information reading unit including the lower surface (anode side) light emitting type organic EL panel applicable to the present invention.

  The basic configuration of the fingerprint information reading unit (100) having the configuration shown in FIG. 11 is the same as that of the fourth embodiment described above with reference to FIG. 7, but since it is a bottom emission type, an organic EL element (OLED) is used. The anode (3T) that constitutes the pixel electrode (54T) that constitutes the image sensor (S) is composed of a light transmissive electrode.

  In the configuration shown in FIG. 11, as in FIG. 6, an example in which the counter electrode (52) and the cathode (7) constituting the organic EL element (OLED) are the same configuration electrode is shown. Thus, by making both the cathode (7) and the counter electrode (52) non-light-transmitting electrodes having the same configuration, it is possible to reduce the manufacturing cost by sharing the formation process and the like.

[Embodiment 9: Configuration example 9 of fingerprint information reading unit]
FIG. 12 is a schematic cross-sectional view (Embodiment 9) showing another example of the configuration of the fingerprint information reading unit including the lower surface (anode side) light emitting type organic EL panel applicable to the present invention.

  The basic configuration of the fingerprint information reading unit (100) having the configuration shown in FIG. 12 is the same as that of the fourth embodiment described above with reference to FIG. 7, but since it is a bottom emission type, an organic EL element (OLED) is used. The anode (3T) that constitutes the pixel electrode (54T) that constitutes the image sensor (S) is composed of a light transmissive electrode.

  In the configuration shown in FIG. 12, as in FIG. 7, the counter electrode (52) and the cathode (7) constituting the organic EL element (OLED), the organic photoelectric conversion layer (51), and the organic EL element (OLED) are configured. Forming the organic functional layer unit (U) having the same structure is a preferable aspect in that the manufacturing cost can be reduced by sharing the formation process.

[Embodiment 10: Configuration example 10 of fingerprint information reading unit]
FIG. 13 is a schematic cross-sectional view (Embodiment 10) showing another example of the configuration of the fingerprint information reading unit provided with the lower surface (anode side) light emitting organic EL panel applicable to the present invention.

  The basic configuration of the fingerprint information reading unit (100) having the configuration shown in FIG. 13 is the same as that of the fifth embodiment described above with reference to FIG. 8, but since it is a bottom emission type, an organic EL element (OLED) is used. The anode (3T) that constitutes the pixel electrode (54T) that constitutes the image sensor (S) is composed of a light transmissive electrode.

  In the configuration shown in FIG. 13, as in FIG. 8, the counter electrode (52) of the image sensor (S), the cathode (7) of the organic EL element (OLED), the organic photoelectric conversion layer (51U), and the organic EL element (OLED) ) Of the organic functional layer unit (U) and the pixel electrode (54T) are the same as the anode (3T) of the organic EL element (OLED), and such a forming material is formed in common. However, this is a preferable aspect in that the manufacturing is easy and the manufacturing cost can be reduced by the common formation process.

<< Embodiment of Optical Fingerprint Authentication Apparatus Comprising Fingerprint Information Reading Unit >>
Next, a specific configuration of the fingerprint information reading unit including the organic EL panel and the image sensor constituting the optical fingerprint authentication device of the present invention will be described with reference to the drawings.

[Embodiment 11: Configuration example 11 of fingerprint information reading unit]
FIG. 14 is a schematic configuration diagram (Embodiment 11) showing an example of the configuration of an optical fingerprint authentication apparatus including a fingerprint information reading unit having an organic EL panel including a donut-shaped organic EL element.

  The schematic cross-sectional view of the fingerprint information reading unit (100) described in A of FIG. 14 has the same configuration as the fingerprint information reading unit (100) constituting the optical fingerprint authentication device described above with reference to FIG. An organic EL panel (P) composed of an organic EL element (OLED) and a light-transmitting non-light emitting portion (12), and a photoelectric conversion element (PED) configured as exemplified in FIG. 8 or FIG. The structure is formed in the light-transmitting non-light emitting portion (12). Further, a TFT unit (53) composed of a resin base material and TFT is disposed below the organic EL panel (P), and an image sensor for reading fingerprint information of a finger (F) as a specimen by an optical method. Is configured. 11 is a glass substrate for holding a finger.

  Irradiated light (L1) is emitted from the organic EL element (OLED) to the fingerprint surface of the finger (F), and reflected light (L2), which is an optical signal, is composed of a photoelectric conversion element (PED) and a TFT unit (53). This is a method of obtaining fingerprint pattern information by receiving light with an image sensor.

  As the shape of the organic EL panel (P) including the organic EL element (OLED) in the fingerprint information reading unit (100) having such a configuration, as shown in FIG. 14B, an elliptical organic EL panel (P) Is a method in which a continuous donut-shaped organic EL element (OLED) is disposed on the outer peripheral portion of the substrate, and a non-light-emitting portion (12) is formed in the central gap portion of the organic EL element (OLED). By adopting the form, the fingerprint pattern can be measured by a wide opening.

  FIG. 14C is a bottom view of the fingerprint information reading unit (100) having the configuration shown in FIG. 14A. The doughnut-shaped organic EL element (OLED) and its non-existence are shown for the finger (F) as the specimen. The photoelectric conversion element (PED) is disposed in the light emitting region, and the TFT unit (53) is disposed on the entire lower surface thereof. However, in FIG. 14C, the description of the TFT unit (53) located on the outermost surface and the glass substrate (11) located on the lowermost surface is omitted.

[Embodiment 12: Configuration example 12 of fingerprint information reading unit]
FIG. 15 is a schematic configuration diagram (Embodiment 12) showing an example of a configuration of an optical fingerprint authentication apparatus including a fingerprint information reading unit having an organic EL panel including a donut-shaped organic EL element.

  The schematic cross-sectional view of the fingerprint information reading unit (100) described in A of FIG. 15 has the same configuration as the fingerprint information reading unit (100) that constitutes the optical fingerprint authentication device described above with reference to FIG. For example, an organic EL panel (P) composed of an organic EL element (OLED) as illustrated in FIGS. 4 to 6 and a light-transmitting non-light emitting part (12), and a photoelectric conversion element (PED) below the organic EL panel (P). In addition, a TFT unit (53) composed of a resin base material and a TFT is arranged to constitute an image sensor for reading fingerprint information of a finger (F) as a specimen by an optical method. 11 is a glass substrate for holding a finger.

  Irradiated light (L1) is emitted from the organic EL element (OLED) to the fingerprint surface of the finger (F), and reflected light (L2), which is an optical signal, is composed of a photoelectric conversion element (PED) and a TFT unit (53). This is a method of obtaining fingerprint pattern information by receiving light with an image sensor.

  The shape of the organic EL panel (P1) including the organic EL element (OLED) in the fingerprint information reading unit (100) having such a configuration is the same as the shape shown in FIG. 14B described above.

  C in FIG. 15 is a bottom view of the fingerprint information reading unit (100) shown in A of FIG. 15, with a donut-shaped organic EL element (OLED) and a whole surface of the finger (F) as a specimen. A photoelectric conversion element (PED) is arranged, and a TFT unit (53) is arranged on the entire lower surface. However, in FIG. 15C, the description of the TFT unit (53) located on the outermost surface and the glass substrate (11) located on the lowermost surface is omitted.

[Embodiment 13: Configuration example 13 of fingerprint information reading unit]
FIG. 16 is a schematic configuration diagram (embodiment 13) showing an example of a fingerprint information reading unit (100) having an organic EL panel having a rectangular organic EL element and an image sensor.

  The schematic cross-sectional view shown by A in FIG. 16 is the same as the configuration shown in A in FIG. 14, but as shown by B in FIG. 16 and C in FIG. 16, the organic constituting the organic EL panel (P) The EL element (OLED) and the photoelectric conversion element (PED) are characterized by a rectangular shape. The optical fingerprint authentication apparatus having such a configuration is difficult to cover the entire circular fingerprint, but is an effective method for detecting an important fingerprint center pattern.

  As shown in FIG. 16B, the organic EL panel (P) has a rectangular shape, and a rectangular organic EL element (OLED) that is continuous at the end thereof is arranged. A non-light-emitting portion (12) having an area is formed, and a rectangular photoelectric conversion element (PED) is arranged inside the non-light-emitting portion (12) according to the form of the non-light-emitting portion (12), as shown in FIG. A rectangular TFT unit (53) is disposed on the entire lower surface. However, in FIG. 16C, the description of the TFT unit (53) located on the outermost surface and the glass substrate (11) located on the lowermost surface is omitted.

  As shown in FIGS. 14 to 16, the organic EL panel (P) has a specific shape, for example, a doughnut-shaped or rectangular organic EL element (OLED). (U) and the cathode (7) are, for example, vacuum deposition methods (for example, resistance heating vapor deposition method, electron beam vapor deposition method, ion plating method, ion beam vapor deposition method), sputtering method, reactive sputtering method, molecular beam It is formed using a mask member having a desired shape by a wet coating method such as an epitaxy method, a plasma polymerization method, an atmospheric pressure plasma polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, or a screen printing method. Can do. Moreover, the function of the organic functional layer unit (U) can be deactivated by ultraviolet irradiation, and an organic EL element having a desired shape can be formed.

[Embodiment 14: Configuration example 14 of fingerprint information reading unit]
FIG. 17 is a schematic configuration diagram (embodiment 14) showing an example of a fingerprint information reading unit (100) having an organic EL panel in which strip-shaped organic EL elements are spaced apart on four sides and an image sensor.

  In the organic EL panel (P) according to the fourteenth embodiment, as shown in FIG. 17B, independent strip-shaped organic EL elements (OLEDs) are arranged on each of the four sides of the rectangular organic EL panel (P). It is a structure, and the shape of the non-light-emitting part (12) and the photoelectric conversion element (PED) is also a rectangle.

  FIG. 17C is a bottom view of the fingerprint information reading unit (100) shown in FIG. 17A, and is an organic EL element (OLED) in which the finger (F) as a specimen is arranged on four sides apart from each other. ), A photoelectric conversion element (PED) is disposed in the non-light emitting portion, and a rectangular TFT unit (53) is disposed on the entire lower surface thereof. However, in FIG. 17C, the description of the TFT unit (53) located on the outermost surface and the glass substrate (11) located on the lowermost surface is omitted.

[Embodiment 15: Configuration example 15 of fingerprint information reading unit]
FIG. 18 is a schematic configuration diagram (Embodiment 15) showing an example of a fingerprint information reading unit (100) having a circular organic EL panel having a rectangular non-light emitting portion at the center and a rectangular image sensor.

  As shown by B in FIG. 18, the outer periphery of the organic EL panel (P) of the fifteenth embodiment is elliptical as in FIG. 14, but the non-light emitting portion (12) disposed in the center and the photoelectric An example in which the conversion element (PED) is a rectangle similar to FIG. 16 is shown.

  C in FIG. 18 is a bottom view of the fingerprint information reading unit (100) shown in A of FIG. 18, and a donut-shaped organic EL element (OLED) and its non-light emission with respect to the finger (F) as a specimen. A rectangular photoelectric conversion element (PED) is arranged in the part (12), and a TFT unit (53) is arranged on the entire lower surface. However, in FIG. 18C, the description of the TFT unit (53) located on the outermost surface and the glass substrate (11) located on the lowermost surface is omitted.

[Embodiment 16: Configuration example 16 of fingerprint information reading unit]
FIG. 19 is a schematic configuration diagram (embodiment 16) showing an example of a fingerprint information reading unit (100) having an organic EL panel in which a plurality of organic EL elements are arranged in parallel in a stripe shape and an image sensor.

  The configuration shown by B in FIG. 19 is a configuration in which a plurality of rectangular organic EL elements (OLEDs) having different sizes are arranged in parallel with each other on an elliptical organic EL panel (P).

  19C is a bottom view of the fingerprint information reading unit (100) shown in FIG. 19A, and a plurality of rectangular organic EL elements (OLEDs) having different sizes with respect to the finger (F) as a specimen. The photoelectric conversion element (PED) is disposed on the non-light emitting portion (12), and the TFT unit (53) is disposed on the entire lower surface thereof. However, in FIG. 19C, the description of the TFT unit (53) located on the outermost surface and the glass substrate (11) located on the lowermost surface is omitted.

  In the configuration shown in FIG. 19, if the total area occupied by the plurality of organic EL elements (OLEDs) is too large, the detectable area is narrowed. Therefore, the non-light emitting portion (12) of the entire area of the organic EL panel (P) is reduced. The opening ratio (%), which is the ratio occupied by the image sensor (S) with respect to the total area of the organic EL panel (P), is preferably 50% or more, and more preferably 60% or more. Yes, particularly preferably 70% or more. As the aperture ratio increases, the total amount of light emitted by the organic EL element (OLED) decreases, and therefore it is preferable to apply an organic EL element (OLED) having a high light emission intensity. As an organic EL element (OLED) having high light emission intensity, for example, an organic EL element having a tandem structure in which two or more organic functional layer units including a light emitting layer are stacked via an intermediate layer or an intermediate electrode can be exemplified.

[Embodiment 17: Configuration example 17 of fingerprint information reading unit]
FIG. 20 is a schematic configuration diagram (Embodiment 17) showing an example of a fingerprint information reading unit (100) having an organic EL panel in which a plurality of organic EL elements are arranged apart from each other on the outer periphery and an image sensor.

  As shown in FIG. 20B, a plurality of rectangular organic EL elements (OLED) are independently arranged on the outer periphery of an elliptical organic EL panel (P), and the organic EL element (OLED) A non-light emitting portion (12) is formed between and in the center.

  FIG. 20C is a bottom view of the fingerprint information reading unit (100) shown in FIG. 20A, and a plurality of rectangular organic EL elements (OLEDs) are arranged circumferentially with respect to the finger (F) as the specimen. Are arranged in a separated state, a photoelectric conversion element (PED) is arranged in the non-light emitting portion (12), and a TFT unit (53) is arranged on the entire lower surface thereof. However, in FIG. 20C, the description of the TFT unit (53) located on the outermost surface and the glass substrate (11) located on the lowermost surface is omitted.

  Such a configuration is preferable in that a high aperture ratio can be obtained compared to the striped configuration illustrated in FIG.

[Example of arrangement of pixel electrodes in photoelectric conversion element (PED)]
FIG. 21 is a schematic diagram illustrating an example of an array pattern of the pixel electrodes (54) in the photoelectric conversion element (PED) constituting the image sensor, and a plurality of pixel electrodes (54) independent in the photoelectric conversion element (PED). However, a method of taking a regular two-dimensional array is preferable.

《Fingerprint authentication method》
Specific methods of fingerprint authentication using the optical fingerprint authentication apparatus of the present invention include, for example, JP 2003-256377 A, JP 2004-005619 A, JP 2004-246586 A, and JP 2005. -063246, JP-A-2005-118289, JP-A-2006-244224, JP-A-2007-289457, JP-A-2007-328511, JP-A-2008-009821, JP-A-2008-171238. The methods described in Japanese Patent Application Laid-Open No. 2009-271825, Japanese Patent Application Laid-Open No. 2011-141880, and the like can be appropriately selected and applied.

  The optical fingerprint authentication device of the present invention comprises an organic EL panel as an illumination light source and a photoelectric conversion type image sensor having an organic photoelectric conversion layer as an image sensor, and has a thin and simple configuration, and various types can be used depending on the purpose. This is an optical fingerprint authentication device that has a shaped organic electroluminescence element as an illumination light source and can be manufactured at low cost. It can be used for personal authentication using fingerprint patterns in bank ATMs, mobile phones, personal digital assistants, personal computers, etc. It can be suitably used.

DESCRIPTION OF SYMBOLS 1 Transparent base material 2, 9 Gas barrier layer 3 Anode 3T Anode (light transmittance)
4 Carrier transport functional layer group 1
5 Light emitting layer 6 Carrier transport functional layer group 2
7 Cathode 7T Cathode (light transmissive)
8 Sealing Adhesive Layer 10 Sealing Substrate 11 Glass Substrate 12 Light Transmission Area, Non-Light Emitting Part 13 Light Emitting Area 51 Organic Photoelectric Conversion Layer 52 Counter Electrode 52T
53 TFT unit 54 Pixel electrode 54T Pixel electrode (light transmissive)
55 Connection 56 TFT
57 Insulating layer 58 Base material 100 Fingerprint information reading part F Finger L1 Light, irradiation light L2 Reflected light, Optical signal OLED Organic EL element P Organic EL panel PED Photoelectric conversion element S Image sensor U Organic functional layer unit

Claims (13)

An optical fingerprint authentication device having at least a light source and an image sensor and detecting diffused light by the image sensor,
As the light source, it has an organic electroluminescence panel,
The organic electroluminescence panel is composed of a light emitting part region constituted by an organic electroluminescence element and a light transmissive non-light emitting part.
The image sensor includes at least an organic photoelectric conversion layer, and the image sensor includes a non-light-emitting portion of the organic electroluminescence panel or a fingerprint information reading unit disposed adjacent to the non-light-emitting portion. An optical fingerprint authentication device characterized by that.   The optical fingerprint authentication apparatus according to claim 1, wherein the image sensor includes at least a counter electrode, an organic photoelectric conversion layer, a pixel electrode, and a thin film transistor.   The optical fingerprint authentication device according to claim 1 or 2, wherein the image sensor is independently installed on a surface opposite to a light emitting surface of the organic electroluminescence panel.   The optical fingerprint authentication device according to claim 1 or 2, wherein the image sensor is independently installed on a light emitting surface side of the organic electroluminescence panel.   5. The device according to claim 2, wherein at least one of a counter electrode, an organic photoelectric conversion layer, and a pixel electrode constituting the image sensor is formed in a non-light emitting portion of the organic electroluminescence panel. An optical fingerprint authentication device according to claim 1.   The counter electrode, the organic photoelectric conversion layer, and the pixel electrode constituting the image sensor are all non-light emitting portions of the organic electroluminescence panel and are formed on the same plane as the organic electroluminescence element. Item 5. The optical fingerprint authentication device according to any one of items 2 to 4.   The organic electroluminescence element has an organic functional layer unit between a pair of opposing electrodes, wherein one of the electrodes is a light transmissive electrode and the other is a non-light transmissive electrode. The optical fingerprint authentication device according to any one of claims 1 to 6.   8. The optical fingerprint authentication device according to claim 7, wherein the light transmissive electrode is made of an oxide semiconductor or a thin metal or alloy.   9. The organic electroluminescence panel according to claim 1, wherein an organic electroluminescence element having a continuous configuration is arranged in an outer peripheral region, and a central portion is the light-transmitting non-light emitting portion. The optical fingerprint authentication device according to any one of the above.   The organic electroluminescence panel has a plurality of organic electroluminescence elements arranged in parallel in a stripe shape, and has the light-transmissive non-light emitting portion between the stripe-shaped organic electroluminescence elements. The optical fingerprint authentication device according to any one of claims 1 to 8, wherein the optical fingerprint authentication device is any one of the above.   The organic electroluminescence panel has a plurality of independent organic electroluminescence elements in an outer peripheral region, and has the light-transmissive non-light-emitting portion in a central portion. The optical fingerprint authentication device according to any one of the above.   The optical fingerprint authentication apparatus according to any one of claims 1 to 11, wherein the organic electroluminescence panel emits light having a wavelength in a visible light region.   The optical fingerprint authentication device according to any one of claims 1 to 11, wherein the organic electroluminescence panel emits light having a wavelength in an infrared region.

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