JPWO2011155131A1 - Dye-adsorbed semiconductor electrode for dye-sensitized solar cell, dye-sensitized solar cell, and method for producing dye-adsorbed semiconductor electrode - Google Patents
Dye-adsorbed semiconductor electrode for dye-sensitized solar cell, dye-sensitized solar cell, and method for producing dye-adsorbed semiconductor electrode Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 115
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052751 metal Chemical class 0.000 claims abstract description 64
- 239000002184 metal Chemical class 0.000 claims abstract description 64
- 150000004696 coordination complex Chemical group 0.000 claims abstract description 55
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 47
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 47
- 125000004429 atom Chemical group 0.000 claims abstract description 24
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 14
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical class N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 150000004032 porphyrins Chemical class 0.000 claims abstract description 11
- 239000000975 dye Substances 0.000 claims description 65
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 238000006243 chemical reaction Methods 0.000 description 43
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 18
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 17
- 229910001887 tin oxide Inorganic materials 0.000 description 17
- 238000001179 sorption measurement Methods 0.000 description 11
- 239000011521 glass Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- 239000011135 tin Substances 0.000 description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- 125000002843 carboxylic acid group Chemical group 0.000 description 6
- 239000000049 pigment Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 239000012327 Ruthenium complex Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- HUVXQFBFIFIDDU-UHFFFAOYSA-N aluminum phthalocyanine Chemical compound [Al+3].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 HUVXQFBFIFIDDU-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052740 iodine Inorganic materials 0.000 description 4
- 239000011630 iodine Substances 0.000 description 4
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- TWJNQYPJQDRXPH-UHFFFAOYSA-N 2-cyanobenzohydrazide Chemical compound NNC(=O)C1=CC=CC=C1C#N TWJNQYPJQDRXPH-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- TUNFSRHWOTWDNC-UHFFFAOYSA-N Myristic acid Natural products CCCCCCCCCCCCCC(O)=O TUNFSRHWOTWDNC-UHFFFAOYSA-N 0.000 description 2
- 235000021360 Myristic acid Nutrition 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical group OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 102000012210 Proprotein Convertase 5 Human genes 0.000 description 2
- 108010022052 Proprotein Convertase 5 Proteins 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000003792 electrolyte Substances 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- JZRYQZJSTWVBBD-UHFFFAOYSA-N pentaporphyrin i Chemical compound N1C(C=C2NC(=CC3=NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 JZRYQZJSTWVBBD-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 150000004033 porphyrin derivatives Chemical class 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 125000000542 sulfonic acid group Chemical group 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- YSHMQTRICHYLGF-UHFFFAOYSA-N 4-tert-butylpyridine Chemical compound CC(C)(C)C1=CC=NC=C1 YSHMQTRICHYLGF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 125000001174 sulfone group Chemical group 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical group CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 1
- ZTUXEFFFLOVXQE-UHFFFAOYSA-N tetradecanoic acid Chemical compound CCCCCCCCCCCCCC(O)=O.CCCCCCCCCCCCCC(O)=O ZTUXEFFFLOVXQE-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M14/00—Electrochemical current or voltage generators not provided for in groups H01M6/00 - H01M12/00; Manufacture thereof
- H01M14/005—Photoelectrochemical storage cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2059—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution
- H01G9/2063—Light-sensitive devices comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution comprising a mixture of two or more dyes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/341—Transition metal complexes, e.g. Ru(II)polypyridine complexes
- H10K85/344—Transition metal complexes, e.g. Ru(II)polypyridine complexes comprising ruthenium
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- H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
- H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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Abstract
赤外域等の長波長を含む広い波長領域の光を効率的に利用することができる色素吸着半導体電極およびこれを用いた色素増感太陽電池ならびに色素吸着半導体電極の製造方法を提供する。色素増感太陽電池の色素吸着半導体電極は、ポルフィリン、フタロシアニンおよびナフタロシアニンならびにこれらの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素と、色素が吸着される金属酸化物多孔質半導体を有する。酸素原子を介して金属錯体の金属原子が金属酸化物多孔質半導体の金属原子に結合して化学吸着される。錯体金属と金属酸化物の金属は同一元素であってもよく、異なる元素であってもよい。【選択図】なしProvided are a dye-adsorbed semiconductor electrode capable of efficiently using light in a wide wavelength region including a long wavelength such as an infrared region, a dye-sensitized solar cell using the same, and a method for producing a dye-adsorbed semiconductor electrode. A dye-adsorbing semiconductor electrode of a dye-sensitized solar cell includes a dye containing one or more selected from porphyrin, phthalocyanine, naphthalocyanine, and metal complexes of derivatives of these compounds, and a metal oxide porous film on which the dye is adsorbed Having a quality semiconductor. The metal atom of the metal complex is bonded to the metal atom of the metal oxide porous semiconductor through the oxygen atom and chemisorbed. The metal of the complex metal and the metal oxide may be the same element or different elements. [Selection figure] None
Description
本発明は、色素増感太陽電池の色素吸着半導体電極および色素増感太陽電池ならびに色素吸着半導体電極の製造方法に関する。 The present invention relates to a dye-adsorbing semiconductor electrode for a dye-sensitized solar cell, a dye-sensitized solar cell, and a method for producing a dye-adsorbing semiconductor electrode.
色素増感太陽電池は、湿式太陽電池あるいはグレッツェル電池等と呼ばれ、シリコン半導体を用いることなくヨウ素溶液に代表される電気化学的なセル構造を持つ点に特徴がある。具体的には、透明な導電性ガラス板（透明導電膜を積層した透明基板：アノード基板）に二酸化チタン粉末等を焼付け、これに色素を吸着させて形成したチタニア層等の多孔質半導体（多孔質酸化物半導体電極）と導電性ガラス板（導電性基板：カソード基板）からなる対極の間に電解液としてヨウ素溶液等を配置した、簡易な構造を有する。透明な導電性ガラス板の側から色素増感太陽電池セル内に導入される太陽光が色素に吸収されることで電子が発生する。
色素増感太陽電池は、材料が安価であり、作製に大掛かりな設備を必要としないことから、低コストの次世代太陽電池として注目されている。The dye-sensitized solar cell is called a wet solar cell or a Gretzel battery, and is characterized in that it has an electrochemical cell structure typified by an iodine solution without using a silicon semiconductor. Specifically, porous semiconductors (such as titania layers) formed by baking titanium dioxide powder or the like on a transparent conductive glass plate (transparent substrate with laminated transparent conductive film: anode substrate) and adsorbing a dye to this powder. It has a simple structure in which an iodine solution or the like is disposed as an electrolytic solution between a counter electrode made of a conductive oxide semiconductor electrode) and a conductive glass plate (conductive substrate: cathode substrate). Electrons are generated by the absorption of sunlight into the dye-sensitized solar cell from the transparent conductive glass plate side.
Dye-sensitized solar cells are attracting attention as low-cost next-generation solar cells because they are inexpensive and do not require large-scale equipment for production.
色素増感太陽電池の光電変換効率は１０％を超え、さらに１５％を目指した研究が行われている。
光電変換効率を向上させるための課題のひとつに、タンデム型やハイブリッド型の高効率太陽電池の開発がある。
これらの高効率太陽電池の開発においては、電極構造等の電池の各構成要素の改良が求められるとともに、使用する色素の改良が大きな課題である。
すなわち、通常利用される可視光等だけでなく赤外域等の長波長を含む広い波長領域の光を効率的に利用することができる色素が求められる。Researches aiming at the photoelectric conversion efficiency of dye-sensitized solar cells exceeding 10% and further 15% are being conducted.
One of the challenges for improving photoelectric conversion efficiency is the development of tandem and hybrid type high efficiency solar cells.
In the development of these high-efficiency solar cells, improvement of each component of the battery such as an electrode structure is required, and improvement of the dye used is a major issue.
That is, there is a demand for a dye that can efficiently use light in a wide wavelength region including long wavelengths such as the infrared region as well as the commonly used visible light.
一般的な色素増感太陽電池の色素として、例えば通称Ｎ３と呼ばれるルテニウム錯体が賞用されている。ルテニウム錯体のピリジン系配位子はカルボン酸基（−ＣＯＯＨ）を持ち、このカルボン酸基がチタニア半導体粒子表面の水酸基（−ＯＨ基）とエステル結合を形成し、ルテニウム錯体はチタニア半導体粒子表面に固定される。このルテニウム錯体（色素）とチタニア半導体（多孔質半導体）の強固な結合により、ルテニウム錯体からチタニア半導体への電子の移動が効率的に行われる。
カルボン酸基のようないわゆるアンカー基には、このほかにリン酸基、スルホン酸基等がある。As a dye for a general dye-sensitized solar cell, for example, a ruthenium complex commonly called N3 has been awarded. The pyridine ligand of the ruthenium complex has a carboxylic acid group (—COOH), and this carboxylic acid group forms an ester bond with the hydroxyl group (—OH group) on the surface of the titania semiconductor particle, and the ruthenium complex is formed on the surface of the titania semiconductor particle. Fixed. Due to the strong bond between the ruthenium complex (dye) and the titania semiconductor (porous semiconductor), electrons are efficiently transferred from the ruthenium complex to the titania semiconductor.
Other so-called anchor groups such as carboxylic acid groups include phosphoric acid groups and sulfonic acid groups.
これに対して、光の近赤外域に感度を有する、チタニア半導体に吸着する色素として、配位結合する金属として亜鉛やアルミニウムを用いたフタロシアニン錯体が報告されており、上記の各アンカー基が例示されている（非特許文献１参照）。 On the other hand, phthalocyanine complexes using zinc or aluminum as a metal to be coordinated have been reported as dyes that are sensitive to the near-infrared region of light and adsorb to titania semiconductors. (See Non-Patent Document 1).
また、例えば、チタニア半導体に吸着する色素として、アルミニウムフタロシアニンとミリスチン酸（Myristic
Acid）を共吸着したものが報告されている（非特許文献２参照）。その報告の中で、アルミニウムフタロシアニンのみを用いた場合に比べてミリスチン酸を所定量共吸着したものは良好な特性を示すとされている。In addition, for example, as dyes adsorbed on titania semiconductor, aluminum phthalocyanine and myristic acid (Myristic
Acid) has been reported (see Non-Patent Document 2). In the report, it is said that a product in which a predetermined amount of myristic acid is co-adsorbed exhibits better characteristics than when only aluminum phthalocyanine is used.
また、例えば、金属酸化物半導体等に吸着する色素として、配位結合する金属としてケイ素の誘導体を用いたポルフィン錯体が報告されており、ポルフィン錯体のピロールにはカルボン酸基、リン酸基、スルホン酸基等の酸性基ではなくて塩基性基が結合されている（特許文献１参照）。 In addition, for example, a porphine complex using a silicon derivative as a coordination bond metal has been reported as a dye adsorbed on a metal oxide semiconductor or the like, and pyrrole of the porphine complex includes a carboxylic acid group, a phosphate group, a sulfone group. A basic group is bonded instead of an acidic group such as an acid group (see Patent Document 1).
解決しようとする問題点は、長波長を含む広い波長領域の光を効率的に利用することができる色素のさらなる改良が求められている点である。 The problem to be solved is that there is a need for further improvements in dyes that can efficiently use light in a wide wavelength region including long wavelengths.
本発明に係る色素増感太陽電池の色素吸着半導体電極は、ポルフィリン、フタロシアニンおよびナフタロシアニンならびにこれらの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素と、該色素が吸着される金属酸化物多孔質半導体を有し、酸素原子を介して該金属錯体の金属原子が該金属酸化物多孔質半導体の金属原子に結合して化学吸着されてなることを特徴とする。 The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention adsorbs a dye containing one or more selected from porphyrin, phthalocyanine, naphthalocyanine, and metal complexes of derivatives of these compounds, and the dye A metal oxide porous semiconductor, wherein the metal atom of the metal complex is bonded to and chemisorbed to the metal atom of the metal oxide porous semiconductor through an oxygen atom.
また、本発明に係る色素増感太陽電池の色素吸着半導体電極は、好ましくは、前記金属錯体の金属と前記金属酸化物多孔質半導体の金属がいずれもスズであることを特徴とする。 The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention is preferably characterized in that both the metal of the metal complex and the metal of the metal oxide porous semiconductor are tin.
また、本発明に係る色素増感太陽電池の色素吸着半導体電極は、好ましくは、前記色素とは別の色素が前記金属酸化物多孔質半導体に共吸着されてなることを特徴とする。 Further, the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention is preferably characterized in that a dye different from the dye is co-adsorbed on the metal oxide porous semiconductor.
また、本発明に係る色素増感太陽電池の色素吸着半導体電極は、好ましくは、前記別の色素が酸素原子を介して前記金属錯体の金属原子に結合してなることを特徴とする。 The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention is preferably characterized in that the another dye is bonded to the metal atom of the metal complex via an oxygen atom.
また、本発明に係る色素増感太陽電池は、上記の色素増感太陽電池の色素吸着半導体電極を備えてなることを特徴とする。 The dye-sensitized solar cell according to the present invention includes the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell.
また、本発明に係る色素増感太陽電池の色素吸着半導体電極の製造方法は、上記の色素増感太陽電池の色素吸着半導体電極の製造方法であって、金属酸化物多孔質半導体に、ポルフィリン、フタロシアニンおよびナフタロシアニンならびにこれらの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素を含浸することを特徴とする。 A method for producing a dye-adsorbing semiconductor electrode of a dye-sensitized solar cell according to the present invention is a method for producing a dye-adsorbing semiconductor electrode of the dye-sensitized solar cell, wherein the metal oxide porous semiconductor includes porphyrin It is impregnated with a dye containing one or more selected from metal complexes of phthalocyanine and naphthalocyanine and derivatives of these compounds.
本発明に係る色素増感太陽電池の色素吸着半導体電極は、ポルフィリン、フタロシアニンおよびナフタロシアニンならびにこれらの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素と、色素が吸着される金属酸化物多孔質半導体を有し、酸素原子を介して金属錯体の金属原子が金属酸化物多孔質半導体の金属原子に結合して化学吸着されてなるため、長波長を含む広い波長領域の光を効率的に利用することができる。
また、本発明に係る色素増感太陽電池は上記の色素吸着半導体電極を備えてなるため、色素吸着半導体電極の効果を好適に得ることができる。
また、本発明に係る色素増感太陽電池の色素吸着半導体電極の製造方法は、金属酸化物多孔質半導体に本発明に係る色素を含浸するため、簡易な製造方法で本発明に係る色素吸着半導体電極を好適に得ることができる。The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention adsorbs a dye containing one or more selected from porphyrin, phthalocyanine, naphthalocyanine, and metal complexes of derivatives of these compounds, and the dye Since it has a metal oxide porous semiconductor and the metal atoms of the metal complex are bonded to the metal atoms of the metal oxide porous semiconductor through oxygen atoms and are chemically adsorbed, light in a wide wavelength region including long wavelengths Can be used efficiently.
Moreover, since the dye-sensitized solar cell according to the present invention includes the above-described dye-adsorbing semiconductor electrode, the effect of the dye-adsorbing semiconductor electrode can be suitably obtained.
Moreover, since the manufacturing method of the pigment | dye adsorption semiconductor electrode of the dye-sensitized solar cell which concerns on this invention impregnates the pigment | dye which concerns on this invention in a metal oxide porous semiconductor, the pigment | dye adsorption semiconductor which concerns on this invention by a simple manufacturing method An electrode can be suitably obtained.
本発明の実施の形態について、以下に説明する。
本実施の形態に係る色素増感太陽電池の色素吸着半導体電極は、ポルフィリン、フタロシアニンおよびナフタロシアニンならびにこれらの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素と、色素が吸着される金属酸化物多孔質半導体を有する。色素は金属酸化物多孔質半導体の金属酸化物ナノ粒子表面に吸着される。
ポルフィリンの誘導体の金属錯体の例は、以下のものを挙げることができる。また、フタロシアニンの誘導体の金属錯体の例は実施例１〜３に、ナフタロシアニンの誘導体の金属錯体の例は実施例４〜６に、それぞれ挙げる。Embodiments of the present invention will be described below.
The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present embodiment has a dye containing one or more selected from porphyrin, phthalocyanine, naphthalocyanine, and metal complexes of derivatives of these compounds, and the dye adsorbed Having a metal oxide porous semiconductor. The dye is adsorbed on the surface of the metal oxide nanoparticle of the metal oxide porous semiconductor.
Examples of metal complexes of porphyrin derivatives include the following. Examples of metal complexes of phthalocyanine derivatives are given in Examples 1 to 3, and examples of metal complexes of phthalocyanine derivatives are given in Examples 4 to 6, respectively.
色素の金属錯体の中心の金属と金属酸化物多孔質半導体の金属は、同一元素であってもよく、また、異なる元素であってもよい。
色素は、酸素原子を介して金属錯体の金属原子が金属酸化物多孔質半導体の金属原子に結合する。すなわち、Ｍ１（金属酸化物多孔質半導体の金属原子）−Ｏ−Ｍ２（金属錯体の金属原子）結合となる。酸素原子は金属酸化物多孔質半導体の表面に存在するＯＨ基に由来するものと考えられるが、金属錯体の金属原子にＯＨ基が結合したものの場合、このＯＨ基に由来することも考えられる。The metal at the center of the metal complex of the dye and the metal of the metal oxide porous semiconductor may be the same element or different elements.
In the dye, the metal atom of the metal complex is bonded to the metal atom of the metal oxide porous semiconductor through an oxygen atom. That is, it becomes an M1 (metal atom of metal oxide porous semiconductor) -O-M2 (metal atom of metal complex) bond. The oxygen atom is considered to be derived from the OH group present on the surface of the metal oxide porous semiconductor. However, in the case where the OH group is bonded to the metal atom of the metal complex, it may be derived from the OH group.
金属錯体の中心の金属は、金属にハロゲン基または水酸基が結合したものを含む。金属錯体の中心の金属は、例えば価数を変えること等により上記の結合形態を実現することができるが、ハロゲン基等の結合物であると、より好適に上記の結合形態を得ることができる。
金属錯体は、カルボン酸基、リン酸基、スルホン酸基等のアンカーを含んでいてもよい。ただし、錯体に例えばカルボン酸基を導入することは合成工程が煩雑であるので、その意味ではこれらのアンカーを含まないものが好適である。
また、金属錯体は、アルキル基、芳香族基、ハロゲン化アミド、ニトリル、ニトロ基等を含んでよいし、また、不飽和結合で共役長が伸びていてもよい。The metal at the center of the metal complex includes one in which a halogen group or a hydroxyl group is bonded to the metal. The metal at the center of the metal complex can realize the above bonding form by, for example, changing the valence, etc., but the bonding form such as a halogen group can more suitably obtain the above bonding form. .
The metal complex may contain an anchor such as a carboxylic acid group, a phosphoric acid group, or a sulfonic acid group. However, for example, introducing a carboxylic acid group into the complex requires a complicated synthesis process, and in that sense, those that do not contain these anchors are preferable.
In addition, the metal complex may contain an alkyl group, an aromatic group, a halogenated amide, a nitrile, a nitro group, or the like, and the conjugate length may be extended by an unsaturated bond.
色素吸着半導体電極は、その機能を害さない限度で、色素および金属酸化物多孔質半導体材料として他の成分を含んでもよい。 The dye-adsorbing semiconductor electrode may contain other components as a dye and a metal oxide porous semiconductor material as long as the function thereof is not impaired.
錯体が配位結合する金属および金属酸化物多孔質半導体の金属は、それぞれ、例えば、周期表の第１３族および第１４の、スズ（Ｓｎ）、ケイ素（Ｓｉ）、鉛（Ｐｂ）、ゲルマニウム（Ｇｅ）、チタン（Ｔｉ）、アルミニウム（Ａｌ）、ガリウム（Ｇａ）、インジウム（Ｉｎ）等を挙げることができる。
例えば、錯体が配位結合する金属がスズやケイ素の場合、それぞれ金属酸化物多孔質半導体の金属としてスズやチタンを好適に用いることができる。
また、錯体が配位結合する金属および金属酸化物多孔質半導体の金属が同一元素の場合、金属種は、金属酸化物多孔質半導体として有用なものである限り特に限定するものではないが、スズが好適である。
上記のように構成される本実施の形態に係る色素増感太陽電池の色素吸着半導体電極は、上記の金属酸化物多孔質半導体に上記の色素を含浸する製造方法により得ることができる。含浸の際は適宜の溶媒を用い、また、含浸した後、適宜の方法で乾燥する。
この本実施の形態に係る色素増感太陽電池の色素吸着半導体電極の製造方法は、色素にカルボン酸等を導入することが必須でない点で製法が簡易である。The metal to which the complex is coordinated and the metal of the metal oxide porous semiconductor are, for example, tin (Sn), silicon (Si), lead (Pb), germanium (groups 13 and 14 of the periodic table), respectively. Ge), titanium (Ti), aluminum (Al), gallium (Ga), indium (In), and the like can be given.
For example, when the metal to which the complex coordinates is tin or silicon, tin or titanium can be preferably used as the metal of the metal oxide porous semiconductor, respectively.
Further, when the metal coordinated by the complex and the metal of the metal oxide porous semiconductor are the same element, the metal species is not particularly limited as long as it is useful as a metal oxide porous semiconductor, but tin Is preferred.
The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present embodiment configured as described above can be obtained by a manufacturing method in which the metal oxide porous semiconductor is impregnated with the dye. When impregnating, an appropriate solvent is used, and after impregnation, drying is performed by an appropriate method.
The method for producing the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to this embodiment is simple in that it is not essential to introduce carboxylic acid or the like into the dye.
また、本実施の形態に係る色素増感太陽電池の色素吸着半導体電極は、好ましくは、上記の色素とは別の色素が金属酸化物多孔質半導体に共吸着される。金属酸化物多孔質半導体上に吸着される新規な色素の層の上に２層目として例えば従来の色素を吸着することができ、これにより相乗効果を得ることができる。
このとき、上記別の色素が酸素原子を介して前記金属錯体の金属原子に結合するものであると、すなわち、Ｍ１（多孔質半導体の金属原子）−Ｏ−Ｍ２（金属錯体の金属原子）−Ｏ−（別の色素）の結合形態であると、より好ましい。In addition, in the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present embodiment, preferably, a dye different from the above dye is co-adsorbed on the metal oxide porous semiconductor. For example, a conventional dye can be adsorbed as a second layer on a novel dye layer adsorbed on the metal oxide porous semiconductor, and a synergistic effect can be obtained.
At this time, if the other dye is bonded to the metal atom of the metal complex via an oxygen atom, that is, M1 (metal atom of the porous semiconductor) -O-M2 (metal atom of the metal complex)- It is more preferable that the bonding form is O- (another dye).
本実施の形態に係る色素増感太陽電池の色素吸着半導体電極は、電子注入が起こるLUMOの電子は、フタロシアニン中心部に集まっており、色素が錯体の中心部で多孔質半導体の金属と結合することにより、色素から金属酸化物多孔質半導体に有効に電子が注入される。これにより、赤外域等の長波長を含む広い波長領域の光を効率的に利用することができ、例えば、タンデム型やハイブリッド型の高効率太陽電池に好適に用いることができる。 In the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present embodiment, the electrons of LUMO in which electron injection occurs are collected at the center of the phthalocyanine, and the dye binds to the porous semiconductor metal at the center of the complex Thus, electrons are effectively injected from the dye into the metal oxide porous semiconductor. Thereby, light in a wide wavelength region including a long wavelength such as an infrared region can be efficiently used, and for example, it can be suitably used for a tandem type or hybrid type high efficiency solar cell.
つぎに、本実施の形態に係る色素増感太陽電池は、本実施の形態に係る色素吸着半導体電極を備えるものであり、色素吸着半導体電極とともに、アノード電極、カソード電極および電解液を有する。
本実施の形態に係る色素増感太陽電池は、本実施の形態に係る色素吸着半導体電極の作用効果を好適に得ることができる。Next, the dye-sensitized solar cell according to the present embodiment includes the dye-adsorbing semiconductor electrode according to the present embodiment, and includes an anode electrode, a cathode electrode, and an electrolytic solution together with the dye-adsorbing semiconductor electrode.
The dye-sensitized solar cell according to the present embodiment can suitably obtain the effects of the dye-adsorbing semiconductor electrode according to the present embodiment.
実施例を挙げて本発明を説明する。なお本発明は、以下に説明する実施例に限定されるものではない。 The present invention will be described with reference to examples. The present invention is not limited to the examples described below.
＜光電変換素子（色素増感太陽電池）の作製＞
(実施例１)
酸化スズ粉末（シーアイ化成社製NanoTek（登録商標））６gに純水1mlおよび酢酸1mlを加え、超音波照射を２４時間行った後、エタノール１００mlを加えさらに３時間超音波照射を行った。さらにエチルセルロース１．５g、α-テルピネオール１０ml添加し十分に撹拌を行った後、ロータリエバポレーターで濃縮し酸化スズペーストを調整した。フッ素をドープした酸化スズ膜付き透明導電性ガラス基板上に酸化スズペーストをスキージ塗布し室温乾燥後、４５０℃で３０分焼成を行い、導電性支持体（酸化スズ膜付き透明導電性ガラス基板）上に膜厚５μmの多孔質の酸化スズ膜を形成した。
N-メチル-2-ピロリドン３０ml中に、下記式の金属錯体を０．１mM溶解した溶液を調製し、上記酸化スズ膜付き半導体層を支持体ごと浸漬し、６時間、８０℃、大気下にて保持した。反応後、酸化スズ膜をエタノールで洗浄し室温乾燥を3回繰り返し、光電変換層（色素吸着半導体電極）を作製した。
対向電極として、酸化スズ膜付き透明導電性ガラス基板上に、白金を担持した透明導電性ガラス板を用い、両者の間に三井デュポン社製ハイミラン25μmを熱圧着し、アセトニトリル溶媒に、４-tert-ブチルピリジン５８０mM、沃素５０mM,沃化リチウム５００mMを溶解したレドックス電解質を入れた電荷移動層を作製して、光電変換素子（色素増感太陽電池）を作製した。<Production of photoelectric conversion element (dye-sensitized solar cell)>
(Example 1)
1 ml of pure water and 1 ml of acetic acid were added to 6 g of tin oxide powder (NanoTek (registered trademark) manufactured by CI Kasei Co., Ltd.), and ultrasonic irradiation was performed for 24 hours. Then, 100 ml of ethanol was added and ultrasonic irradiation was further performed for 3 hours. Further, 1.5 g of ethyl cellulose and 10 ml of α-terpineol were added and sufficiently stirred, and then concentrated with a rotary evaporator to prepare a tin oxide paste. A squeegee coating of tin oxide paste is applied on a transparent conductive glass substrate with tin oxide film doped with fluorine, dried at room temperature, and then baked at 450 ° C. for 30 minutes to provide a conductive support (transparent conductive glass substrate with tin oxide film). A porous tin oxide film having a thickness of 5 μm was formed thereon.
A solution in which 0.1 mM of a metal complex of the following formula is dissolved in 30 ml of N-methyl-2-pyrrolidone is prepared, and the semiconductor layer with the above tin oxide film is immersed together with the support, and it is kept at 80 ° C. in the atmosphere for 6 hours. Held. After the reaction, the tin oxide film was washed with ethanol and dried at room temperature three times to produce a photoelectric conversion layer (dye-adsorbing semiconductor electrode).
As the counter electrode, a transparent conductive glass plate carrying platinum on a transparent conductive glass substrate with a tin oxide film was used, and Hi-Milan 25 μm made by Mitsui DuPont was thermocompression bonded between the two, and 4-tert. A charge transfer layer containing a redox electrolyte in which -butylpyridine 580 mM, iodine 50 mM, and
(実施例２)
下記式の金属錯体を用いたほかは実施例１と同様の方法で光電変換素子（色素増感太陽電池）を作製した。(Example 2)
A photoelectric conversion element (dye-sensitized solar cell) was produced in the same manner as in Example 1 except that the metal complex of the following formula was used.
(実施例３)
下記式の金属錯体を用いたほかは実施例１と同様の方法で光電変換素子（色素増感太陽電池）を作製した。Example 3
A photoelectric conversion element (dye-sensitized solar cell) was produced in the same manner as in Example 1 except that the metal complex of the following formula was used.
(実施例４)
下記式の金属錯体を用いたほかは実施例１と同様の方法で光電変換素子（色素増感太陽電池）を作製した。Example 4
A photoelectric conversion element (dye-sensitized solar cell) was produced in the same manner as in Example 1 except that the metal complex of the following formula was used.
(実施例５)
下記式の金属錯体を用いたほかは実施例１と同様の方法で光電変換素子（色素増感太陽電池）を作製した。(Example 5)
A photoelectric conversion element (dye-sensitized solar cell) was produced in the same manner as in Example 1 except that the metal complex of the following formula was used.
(実施例６)
下記式の金属錯体を用いたほかは実施例１と同様の方法で光電変換素子（色素増感太陽電池）を作製した。Example 6
A photoelectric conversion element (dye-sensitized solar cell) was produced in the same manner as in Example 1 except that the metal complex of the following formula was used.
(比較例)
下記式の金属錯体を用いたほかは実施例１と同様の方法で光電変換素子（色素増感太陽電池）を作製した。(Comparative example)
A photoelectric conversion element (dye-sensitized solar cell) was produced in the same manner as in Example 1 except that the metal complex of the following formula was used.
<光電変換素子（色素増感太陽電池）の評価>
上記で得られた実施例１〜６および比較例の光電変換素子を、AM１．５,１００mW/cm2のソーラーシミュレータを用いて、太陽電池特性を測定して得られた短絡電流密度Jsc(mA/cm2)および開放電圧値Voc(V)を表１に示す。これらの値は、同様の方法で作製した４サンプルの光電変換素子についての測定結果の平均値である。なお、標準偏差はいずれも０．１以下であった。
なお、実施例１〜３および比較例の光電変換素子で用いた金属錯体（色素）の光波長（横軸：単位 ｎｍ）と光電変換効率（縦軸：単位 ％）の関係をこの順でそれぞれ図１〜図４に示す。また、実施例４〜６の光電変換素子で用いた金属錯体（色素）の光波長（横軸：単位 ｎｍ）と光電変換効率（縦軸：単位 ％）の関係をこの順でそれぞれ図７〜図９に示す。<Evaluation of photoelectric conversion element (dye-sensitized solar cell)>
The photoelectric conversion elements of Examples 1 to 6 and Comparative Example obtained above were measured for the short-circuit current density Jsc (mA / mA) obtained by measuring the solar cell characteristics using a solar simulator of AM1.5, 100 mW / cm2. cm2) and the open circuit voltage value Voc (V) are shown in Table 1. These values are average values of the measurement results for the four samples of photoelectric conversion elements manufactured by the same method. The standard deviations were all 0.1 or less.
In addition, the relationship between the light wavelength (horizontal axis: unit nm) and the photoelectric conversion efficiency (vertical unit: unit%) of the metal complex (dye) used in the photoelectric conversion elements of Examples 1 to 3 and the comparative example in this order, respectively. Shown in FIGS. Moreover, the relationship between the light wavelength (horizontal axis: unit nm) of the metal complex (dye) used in the photoelectric conversion elements of Examples 4 to 6 and the photoelectric conversion efficiency (vertical axis: unit%) is shown in FIG. As shown in FIG.
表１より、実施例１〜６は光電変換素子の特性が優れており、吸収波長領域も８００nm以上に分光感度を有していることがわかる。 From Table 1, it can be seen that Examples 1 to 6 are excellent in the characteristics of the photoelectric conversion element, and the absorption wavelength region has a spectral sensitivity of 800 nm or more.
＜光電変換素子（色素増感太陽電池）の作製および評価＞
（実施例７）
酸化スズ粉末（シーアイ化成社製NanoTek（登録商標））６gに純水1mlおよび酢酸1mlを加え、超音波照射を２４時間行った後、エタノール１００mlを加えさらに３時間超音波照射を行った。さらにエチルセルロース１．５g、α-テルピネオール１０ml添加し十分に撹拌を行った後、ロータリエバポレーターで濃縮し酸化スズペーストを調整した。フッ素をドープした酸化スズ膜付き透明導電性ガラス基板上に酸化スズペーストをスキージ塗布し室温乾燥後、４５０℃で３０分焼成を行い、導電性支持体上に膜厚５μmの多孔質の酸化スズ膜を形成した。
N-メチル-2-ピロリドン３０ml中に、実施例１で用いた金属錯体を０．１mM溶解した溶液を調製し、上記酸化スズ膜付き半導体層を支持体ごと浸漬し、６時間、８０℃、大気下にて保持した。この操作を３度くり返した。反応後、酸化スズ膜をエタノールで洗浄し室温乾燥を3回繰り返し、光電変換層を作製した。さらに、本基板（光電変換層）を0.1mMのRu色素(N719 ソラロニクス社製)に浸漬した。
対向電極として、フッ素をドープした酸化スズ膜付き透明導電性ガラス基板上に、白金を担持した透明導電性ガラス板を用い、前記導電性支持体と対向電極との間に三井デュポン社製ハイミラン25μmを熱圧着し、アセトニトリル溶媒に、４-tert-ブチルピリジン５８０mM、沃素５０mM,沃化リチウム５００mMを溶解したレドックス電解質を入れた電荷移動層を作製して、光電変換素子を作製した。
得られた光電変換素子の短絡電流は12 mA/cm2で、N719のみを吸着させた場合の8mA/cm2、実施例１で用いた金属錯体のみを吸着させた場合の4mA/cm2よりも高かった。
なお、光電変換層を作製する際の浸漬時間を変化させ、実施例１で用いた金属錯体の吸着量とN719の吸着量を比較したところ、実施例１で用いた金属錯体は時間経過とともに吸着量が増加したが、これに伴うN719の吸着量の減少は少なかった。これは、実施例１で用いた金属錯体が金属酸化物の吸着サイトを満たしたとしても、吸着サイトが新しく生まれることでＮ７１9の吸着量が減らないことを意味するものと考えられる。このときの吸着機構は、図５に示すものが考えられる。実施例１で用いた金属錯体の中心金属に酸素原子を介してＮ７１9が結合する。なお、図５中、Ｒｕはルテニウムを、ＮＣＳはＮ＝Ｃ＝Ｓを、ＴＢＡはTetrabutyl ammoniumを、それぞれ示す。
金属錯体（色素）の光波長（横軸：単位 ｎｍ）と光電変換効率（縦軸：単位 ％）の関係を図６に示す。図６中、点線（ＳＰＣ６）は実施例１で用いた金属錯体、破線（Ｎ７１９）はＮ７１９および実線（ＳＰＣ６（Ｎ７１９））は実施例７を、それぞれ示す。<Production and Evaluation of Photoelectric Conversion Element (Dye-sensitized Solar Cell)>
(Example 7)
1 ml of pure water and 1 ml of acetic acid were added to 6 g of tin oxide powder (NanoTek (registered trademark) manufactured by CI Kasei Co., Ltd.), and ultrasonic irradiation was performed for 24 hours. Then, 100 ml of ethanol was added and ultrasonic irradiation was further performed for 3 hours. Further, 1.5 g of ethyl cellulose and 10 ml of α-terpineol were added and sufficiently stirred, and then concentrated with a rotary evaporator to prepare a tin oxide paste. A tin oxide paste is squeegee-coated on a transparent conductive glass substrate with a tin oxide film doped with fluorine, dried at room temperature, then baked at 450 ° C. for 30 minutes, and porous tin oxide having a thickness of 5 μm on the conductive support. A film was formed.
A solution in which 0.1 mM of the metal complex used in Example 1 was dissolved in 30 ml of N-methyl-2-pyrrolidone was prepared, and the semiconductor layer with the tin oxide film was immersed together with the support. Hold under air. This operation was repeated three times. After the reaction, the tin oxide film was washed with ethanol and dried at room temperature three times to produce a photoelectric conversion layer. Further, the substrate (photoelectric conversion layer) was immersed in 0.1 mM Ru dye (N719 Solaronics).
As a counter electrode, on a transparent conductive glass substrate with a tin oxide film doped with fluorine, a transparent conductive glass plate carrying platinum, and between the conductive support and the counter electrode, HiMilan 25 μm made by Mitsui DuPont And a charge transfer layer in which a redox electrolyte in which 4-tert-butylpyridine (580 mM), iodine (50 mM) and lithium iodide (500 mM) were dissolved in an acetonitrile solvent was prepared to produce a photoelectric conversion element.
The short-circuit current of the obtained photoelectric conversion element was 12 mA / cm2, which was higher than 8 mA / cm2 when only N719 was adsorbed and 4 mA / cm2 when only the metal complex used in Example 1 was adsorbed. .
In addition, when the immersion time at the time of producing a photoelectric converting layer was changed and the adsorption amount of the metal complex used in Example 1 and the adsorption amount of N719 were compared, the metal complex used in Example 1 was adsorbed over time. Although the amount increased, there was little decrease in the amount of N719 adsorbed. This is considered to mean that even if the metal complex used in Example 1 satisfies the adsorption site of the metal oxide, the adsorption amount of N719 is not reduced by newly creating the adsorption site. As the adsorption mechanism at this time, the one shown in FIG. 5 can be considered. N719 is bonded to the central metal of the metal complex used in Example 1 through an oxygen atom. In FIG. 5, Ru represents ruthenium, NCS represents N = C = S, and TBA represents Tetrabutyl ammonium.
FIG. 6 shows the relationship between the light wavelength (horizontal axis: unit nm) of the metal complex (dye) and the photoelectric conversion efficiency (vertical unit: unit%). In FIG. 6, a dotted line (SPC6) indicates the metal complex used in Example 1, a broken line (N719) indicates N719, and a solid line (SPC6 (N719)) indicates Example 7.
【０００３】
ｕｒｎａｌｏｆ Ｐｏｒｐｈｙｒｉｎｓ ａｎｄ Ｐｈｔｈａｌｏｃｙａｎｉｎｅｓ ３、２３０−２３７（１９９９）
非特許文献２：Ｙｕｔａｋａ Ａｍａｏほか、Ｄｙｅ−Ｓｅｎｓｉｔｉｚｅｄ Ｓｏｌｌａｒ Ｃｅｌｌ Ｕｓｉｎｇ ａ ＴｉＯ ２Ｎａｎｏｃｒｙｓｔａｌｌｉｎｅ Ｆｉｌｍ Ｅｌｅｃｔｒｏｄｅ Ｍｏｄｉｆｉｅｄ ｂｙ ａｎ Ａｌｕｍｉｎｕｍ Ｐｈｔｈａｌｏｃｙａｎｉｎｅ ａｎｄＭｙｒｉｓｔｉｃ Ａｃｉｄ Ｃｏａｄｓｏｒｐｔｉｏｎ Ｌａｙｅｒ、Ｌａｎｇｍｕｉｒ ２００３、１９、８８７２−８８７５、Ｐｕｂｌｉｓｈｅｄ ｏｎ Ｗｅｂ０９／１１／２００３
発明の概要
発明が解決しようとする課題
［００１０］
解決しようとする問題点は、長波長を含む広い波長領域の光を効率的に利用することができる色素のさらなる改良が求められている点である。
課題を解決するための手段
［００１１］
本発明に係る色素増感太陽電池の色素吸着半導体電極は、ナフタロシアニンおよびこの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素と、該色素が吸着される金属酸化物多孔質半導体を有し、酸素原子を介して該金属錯体の金属原子が該金属酸化物多孔質半導体の金属原子に結合して化学吸着されてなることを特徴とする。
［００１２］
また、本発明に係る色素増感太陽電池の色素吸着半導体電極は、好ましくは、前記金属錯体の金属と前記金属酸化物多孔質半導体の金属がいずれもスズであることを特徴とする。
［００１３］
また、本発明に係る色素増感太陽電池の色素吸着半導体電極は、好ましくは、前記色素とは別の色素が前記金属酸化物多孔質半導体に共吸着されてなることを特徴とする。
［００１４］
また、本発明に係る色素増感太陽電池の色素吸着半導体電極は、好ましくは、前記別の色素が酸素原子を介して前記金属錯体の金属原子に結合してなることを特徴とする。
［００１５］
また、本発明に係る色素増感太陽電池は、上記の色素増感太陽電池の色素吸着半導体電極を備えてなることを特徴とする。
［００１６］
また、本発明に係る色素増感太陽電池の色素吸着半導体電極の製造方法は[0003]
urnalof Porphyrins and Phthalocyanines 3, 230-237 (1999)
Non-Patent Document 2: Yutaka Amao addition, Dye-Sensitized Sollar Cell Using a TiO 2Nanocrystalline Film Electrode Modified by an Aluminum Phthalocyanine andMyristic Acid Coadsorption Layer, Langmuir 2003,19,8872-8875, Published on Web09 / 11/2003
SUMMARY OF THE INVENTION Problems to be Solved by the Invention [0010]
The problem to be solved is that there is a need for further improvements in dyes that can efficiently use light in a wide wavelength region including long wavelengths.
Means for Solving the Problems [0011]
The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention includes a dye containing one or more selected from among metal complexes of naphthalocyanine and derivatives of this compound, and a metal oxide porous material on which the dye is adsorbed It is characterized by comprising a porous semiconductor, wherein the metal atom of the metal complex is bonded to the metal atom of the porous metal oxide semiconductor through an oxygen atom and is chemically adsorbed.
[0012]
The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention is preferably characterized in that both the metal of the metal complex and the metal of the metal oxide porous semiconductor are tin.
[0013]
Further, the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention is preferably characterized in that a dye different from the dye is co-adsorbed on the metal oxide porous semiconductor.
[0014]
The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention is preferably characterized in that the another dye is bonded to the metal atom of the metal complex via an oxygen atom.
[0015]
The dye-sensitized solar cell according to the present invention includes the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell.
[0016]
In addition, the method for producing the dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention is as follows.
【０００４】
、上記の色素増感太陽電池の色素吸着半導体電極の製造方法であって、金属酸化物多孔質半導体に、ナフタロシアニンおよびこの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素を含浸することを特徴とする。
発明の効果
［００１７］
本発明に係る色素増感太陽電池の色素吸着半導体電極は、ナフタロシアニンおよびこの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素と、色素が吸着される金属酸化物多孔質半導体を有し、酸素原子を介して金属錯体の金属原子が金属酸化物多孔質半導体の金属原子に結合して化学吸着されてなるため、長波長を含む広い波長領域の光を効率的に利用することができる。
また、本発明に係る色素増感太陽電池は上記の色素吸着半導体電極を備えてなるため、色素吸着半導体電極の効果を好適に得ることができる。
また、本発明に係る色素増感太陽電池の色素吸着半導体電極の製造方法は、金属酸化物多孔質半導体に本発明に係る色素を含浸するため、簡易な製造方法で本発明に係る色素吸着半導体電極を好適に得ることができる。
図面の簡単な説明
［００１８］
［図１］図１は実施例１の金属錯体の光波長と光電変換効率の関係を示す図である。
［図２］図２は実施例２の金属錯体の光波長と光電変換効率の関係を示す図である。
［図３］図３は実施例３の金属錯体の光波長と光電変換効率の関係を示す図である。
［図４］図４は比較例の錯体の光波長と光電変換効率の関係を示す図である。
［図５］図５は実施例７の吸着機構を説明するための図である。
［図６］図６は実施例７の金属錯体の光波長と光電変換効率の関係を示す図である。
［図７］図７は実施例４の金属錯体の光波長と光電変換効率の関係を示す図であ[0004]
A method for producing a dye-adsorbing semiconductor electrode of the dye-sensitized solar cell, wherein the metal oxide porous semiconductor contains one or more selected from naphthalocyanine and a metal complex of a derivative of this compound It is characterized by impregnating.
Effects of the Invention [0017]
The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present invention includes a dye containing one or more selected from naphthalocyanine and a metal complex of a derivative of this compound, and a metal oxide porous material on which the dye is adsorbed Since it has a semiconductor and the metal atoms of the metal complex are bonded to the metal atoms of the metal oxide porous semiconductor via oxygen atoms and are chemically adsorbed, light in a wide wavelength range including long wavelengths can be used efficiently. can do.
Moreover, since the dye-sensitized solar cell according to the present invention includes the above-described dye-adsorbing semiconductor electrode, the effect of the dye-adsorbing semiconductor electrode can be suitably obtained.
Moreover, since the manufacturing method of the pigment | dye adsorption semiconductor electrode of the dye-sensitized solar cell which concerns on this invention impregnates the pigment | dye which concerns on this invention in a metal oxide porous semiconductor, the pigment | dye adsorption semiconductor which concerns on this invention by a simple manufacturing method An electrode can be suitably obtained.
BRIEF DESCRIPTION OF THE DRAWINGS [0018]
FIG. 1 is a graph showing the relationship between the light wavelength of the metal complex of Example 1 and photoelectric conversion efficiency.
FIG. 2 is a graph showing the relationship between the light wavelength of the metal complex of Example 2 and photoelectric conversion efficiency.
FIG. 3 is a graph showing the relationship between the light wavelength of the metal complex of Example 3 and photoelectric conversion efficiency.
FIG. 4 is a graph showing the relationship between the light wavelength and the photoelectric conversion efficiency of the complex of the comparative example.
[FIG. 5] FIG. 5 is a view for explaining an adsorption mechanism of Example 7.
FIG. 6 is a graph showing the relationship between the light wavelength of the metal complex of Example 7 and photoelectric conversion efficiency.
FIG. 7 is a graph showing the relationship between the light wavelength of the metal complex of Example 4 and photoelectric conversion efficiency.
【０００５】
る。
［図８］図８は実施例５の金属錯体の光波長と光電変換効率の関係を示す図である。
［図９］図９は実施例６の金属錯体の光波長と光電変換効率の関係を示す図である。
発明を実施するための形態
［００１９］
本発明の実施の形態について、以下に説明する。
本実施の形態に係る色素増感太陽電池の色素吸着半導体電極は、ポルフィリン、フタロシアニンおよびナフタロシアニンならびにこれらの化合物の誘導体の金属錯体のなかから選ばれる１または２以上を含む色素と、色素が吸着される金属酸化物多孔質半導体を有する。色素は金属酸化物多孔質半導体の金属酸化物ナノ粒子表面に吸着される。
ポルフィリンの誘導体の金属錯体の例は、以下のものを挙げることができる。また、フタロシアニンの誘導体の金属錯体の例は実施例１、２に、ナフタロシアニンの誘導体の金属錯体の例は実施例３〜６に、それぞれ挙げる。
［００２０］[0005]
The
FIG. 8 is a graph showing the relationship between the light wavelength of the metal complex of Example 5 and photoelectric conversion efficiency.
FIG. 9 is a graph showing the relationship between the light wavelength of the metal complex of Example 6 and photoelectric conversion efficiency.
MODE FOR CARRYING OUT THE INVENTION [0019]
Embodiments of the present invention will be described below.
The dye-adsorbing semiconductor electrode of the dye-sensitized solar cell according to the present embodiment has a dye containing one or more selected from porphyrin, phthalocyanine, naphthalocyanine, and metal complexes of derivatives of these compounds, and the dye adsorbed Having a metal oxide porous semiconductor. The dye is adsorbed on the surface of the metal oxide nanoparticle of the metal oxide porous semiconductor.
Examples of metal complexes of porphyrin derivatives include the following. Examples of metal complexes of phthalocyanine derivatives are given in Examples 1 and 2, and examples of metal complexes of naphthalocyanine derivatives are given in Examples 3 to 6, respectively.
[0020]
Claims (14)
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