JPWO2009028642A1 - High-density II-VI compound semiconductor molded body and method for producing the same - Google Patents

Abstract

The present invention relates to a II-VI compound semiconductor molded body having a crystallite size of 250 mm or less and a relative density of 0.85 or more, (A) a pedestal having convex protrusions, and (B) convex protrusions. (C) an impact receiving member, and (A) the pedestal, (B) the pedestal assisting tool, and (C) the impact receiving member are configured to be detachable. A method for producing a II-VI compound semiconductor molded body is provided, in which a sample is loaded into the impact target capsule and molded using a shock wave. The present invention also provides an impact target capsule having a sample loading section, loads a group II-VI compound semiconductor into the sample loading section, and applies a shock wave of 15 GPa or more to the impact target capsule. A method for producing a Group VI compound semiconductor molding is also provided.

Description

  The present invention relates to a high-density II-VI group compound semiconductor molded body and a manufacturing method thereof, and more particularly to a zinc sulfide molded body as a target material for forming an inorganic EL element and a manufacturing method thereof. More specifically, the present invention relates to a method for producing a molded body of a II-VI group compound semiconductor using a shock wave for molding.

  Conventionally, film formation techniques such as sputtering and electron beam evaporation have been generally used for forming a light emitting layer of an EL element. And as a method for producing a zinc sulfide molded body that becomes a target material when forming a light emitting layer by these film forming techniques, a method of molding zinc sulfide powder in which a luminescent element is mixed with zinc sulfide powder by a hot press method, Alternatively, a method of forming by a cold press method and then sintering in a firing furnace has been developed. However, the zinc sulfide powder has poor crystallinity and it is difficult to increase the relative density (ratio of bulk density to theoretical density) of the molded body. For example, when the molding is simply performed by the hot press method, or by the molding method that is preformed by the cold press and is simply sintered, the relative density of the obtained molded body is only about 60 to 70%. When forming a film by a method such as electron beam vapor deposition using such a molded article having a low relative density, gas is released from the zinc sulfide molded article, and not only the degree of vacuum is lowered, but also a light emitting layer cannot be constructed. There was a problem.

  Therefore, a method of improving the bulk density by mixing zinc sulfide and silicon oxide and hot pressing (see Patent Document 1), or forming by cold pressing using zinc sulfide powder to which a barium component is added, and hydrogen sulfide. A method of firing and molding in gas (see Patent Document 2) has been proposed as an improved method. Furthermore, a method of hot pressing a cold pressed molded body (see Patent Document 3) is known.

However, in the method described in Patent Document 1, since a large amount of silicon oxide is put and molded, the relative density is improved, but silicon is mixed during film formation, and in Patent Document 2, barium is mixed. Arise. Further, in Patent Document 2, there is a problem that a special apparatus is required for firing and molding in hydrogen sulfide. Further, in Patent Document 3, an apparatus made of a special material is not necessary, but the problem that two apparatuses must be used and the number of man-hours is complicated cannot be solved. In addition, since hot press is used, when using a thermally unstable substance, or conversely, a material with high crystallinity and low vapor pressure, the contents are sintered due to thermal reduction, resulting in unevenness. In some cases, it may be obtained as a molded product, or a molded product may not be obtained.
Japanese Patent Laid-Open No. 10-324968 JP-A-2-59463 JP-A-5-310467

  Accordingly, an object of the present invention is to provide a high-density II-VI compound semiconductor molding and a method for producing the same, and particularly a high-density II-VI compound using a thermally unstable metal-containing material or a highly crystalline material. An object of the present invention is to provide a semiconductor molded body and a manufacturing method thereof.

  The inventors of the present invention have made extensive studies and found that the object can be achieved by using a shock wave, and have reached the present invention.

  That is, the present invention provides the following.

  [1] A II-VI compound semiconductor molded body having a crystallite size of 250 mm or less and a relative density of 0.85 or more, particularly 0.90 or more.

  [2] The molded article according to [1], wherein the II-VI group compound semiconductor is zinc sulfide or a mixture of zinc sulfide and another metal sulfide.

  [3] (A) includes a pedestal having a convex protrusion, (B) a pedestal auxiliary tool that is fitted to the convex protrusion to form a sample loading portion, and (C) an impact receiving member. II-VI group compound semiconductor molding characterized in that: a pedestal, (B) a pedestal auxiliary tool, and (C) an impact receiving member are loaded with a sample in a detachable impact target capsule and molded using a shock wave Body manufacturing method.

  [4] The method according to [3], further using an impact target capsule provided with an impact buffering member.

  [5] The method according to [4], wherein the shock absorbing member is an impact target capsule provided with a pressure release port and / or a pressure release groove for releasing pressure generated when an impact is applied.

  [6] The method according to any one of [3] to [5], wherein the shock wave is 15 GPa or more.

  [7] The method according to any one of [3] to [6], wherein the II-VI group compound semiconductor is zinc sulfide or a mixture of zinc sulfide and another metal sulfide.

  [8] A group II-VI characterized in that an impact target capsule having a sample loading unit is prepared, a II-VI group compound semiconductor is loaded in the sample loading unit, and a shock wave of 15 GPa or more is applied to the impact target capsule. A method for producing a compound semiconductor molded body.

  [9] The method according to [8], wherein the II-VI group compound semiconductor is zinc sulfide or a mixture of zinc sulfide and another metal sulfide.

  According to the method for producing a molded body of the present invention, a high-density II-VI compound semiconductor molded body and a method for producing the same, particularly a high-density II using a material containing a thermally unstable metal or a highly crystalline material. -A VI group compound semiconductor molding and its manufacturing method are provided. According to the manufacturing method, in particular, a molded body of zinc sulfide having a high bulk density of 3.5 or more or a mixture of zinc sulfide and another metal sulfide can be manufactured with high productivity. In the method for producing a molded body according to the present invention, the sample is accommodated in a novel impact target capsule in which each member is detachable. Therefore, when the pressure is high (high impact force), the capsule is not destroyed. The molded body can be taken out, and a molded body having a high relative density can be obtained with high productivity.

It is the schematic which shows an example of the impact target capsule used by this invention. It is a schematic sectional drawing which shows the other example of the impact target capsule used by this invention. It is a schematic sectional drawing which shows the example of an impact target capsule without a base auxiliary tool. It is the schematic which shows the other example of the impact target capsule used by this invention. It is a schematic sectional drawing of FIG. It is an AA arrow line view of FIG. It is a BB arrow line view of FIG. It is CC and DD arrow line view of FIG. It is an EE arrow line view of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Base 2 Convex protrusion 3 Base auxiliary tool 4 Impact receiving member 5 Cavity part 6 Momentum trap 7 Base 8 Impact receiving member 9 Convex protrusion 10 Base auxiliary tool 11 Protection ring 12 Impact guide member 13 Bolt hole

  Although it does not restrict | limit especially as a II-VI group compound semiconductor used by this invention, Zinc sulfide, cadmium sulfide, zinc selenide, cadmium selenide, etc. can be used. Those obtained by reacting a Group II metal compound and a Group VI element-containing compound may be used as they are, or those obtained by crystallization by a method such as firing may be used. As the II-VI group compound semiconductor, zinc sulfide or a mixture of zinc sulfide and other metal sulfide is preferable.

  When a mixture with another metal sulfide is used, a method of mixing a compound of another metal with a II-VI group compound and performing a thermal treatment such as firing, for example, a sulfide of another metal is zinc sulfide. It is also possible to use a mixture obtained by directly mixing using a ball mill or the like and firing the obtained mixture.

  Other metals include transition metals such as manganese, copper, silver and iridium, typical metals such as aluminum, gallium, indium, magnesium and strontium, and rare earth elements such as cerium, praseodymium, samarium, europium, gadolinium and terbium. be able to. The mixing amount of these elements is not particularly limited, and it goes without saying that it varies depending on the type of element used, but is usually 1 to 500,000 ppm with respect to the base II-VI group compound semiconductor, economy In consideration of the property and operability, it can be mixed in the range of 10 to 100000 ppm, more preferably 50 to 50000 ppm.

  In the present invention, a flux can be used as necessary to enhance the binding property. As the flux to be used, chlorides such as sodium chloride, potassium chloride, ammonium chloride, calcium chloride and zinc chloride, and nitrates such as sodium nitrate and potassium nitrate can be used. The amount to be used is such that the moldability can be improved and the residue does not affect the strength of the molded product, that is, 0.1 to 30% by weight, more preferably with respect to the II-VI group compound semiconductor. Is used in the range of 0.2 to 20% by weight.

  In the present invention, a II-VI group compound semiconductor is sealed in an impact target capsule and irradiated with a shock wave. The impact target capsule to be used is not particularly limited as long as it can withstand shock waves and maintain the shape of the manufactured II-VI group compound semiconductor molded product. It is important that the portion that receives the shock wave is smooth so that it receives the shock wave uniformly and does not damage the molded product due to deformation or breakage. For example, if it is an impact target capsule that includes a pedestal having a convex protrusion, a pedestal auxiliary tool that is mounted on the convex protrusion and forms a sample filling portion, and an impact receiving member, the molded product is taken out. It is easy and can prevent the molded body from being damaged, which is preferable.

  Examples of impact target capsules used in the present invention will be described in detail with reference to the drawings. FIG. 1 is a schematic view of an example of an impact target capsule used in the present invention. Essentially, (A) a pedestal 1 having convex protrusions and (B) a convex protrusion 2 are fitted without gaps. The pedestal auxiliary tool 3 that forms the sample loading portion, and (C) the impact receiving member 4. Although these shapes are not particularly limited, a circular shape is easy to produce and practical, and is excellent in strength, so the circular shape will be specifically described.

  In the impact target capsule of the present invention, (A) a pedestal having a convex protrusion, (B) a pedestal auxiliary tool that is fitted to the convex protrusion without a gap to form a sample loading portion, and (C) an impact receiving member are: It is configured to be detachable. When the diameter of the pedestal is D1, the thickness is L1, the diameter of the protrusion is D2, and the height of the protrusion is L2, considering the size of a practical one-stage gunpowder gun or one-stage gas gun, D1 is usually 10 ~ 200 mm, L1 is 2 to 20 mm, D2 is 8 to 160 mm, and L2 is about 2 to 50 mm.

  The pedestal auxiliary tool is fitted into the convex protrusion without any gaps to form the sample loading portion. By using the pedestal auxiliary tool, the target capsule can be assembled corresponding to a slight molding error of the sample. it can. The pedestal auxiliary tool is preferably made of the same material as the pedestal and the impact receiving member. When the diameter of the pedestal auxiliary tool is D3 and the thickness is L3, D3 is about 9 to 190 mm, but preferably D3 <D1. The impact receiving member has a hollow portion 5 as necessary, and L4 is usually about 2 to 60 mm (when the hollow portion 5 is provided, its diameter L5 is usually 59 mm or less). In order to load the sample, L3> L2, and the thickness of the sample is determined by L3-L2.

  The thickness L3 of the pedestal auxiliary tool is not particularly limited as long as it can withstand the impact given by the flying object. However, if the thickness is too thin, there is a problem of mechanical strength. If the thickness is too large, the weight of the target capsule is remarkably increased and the operability is lowered. Therefore, the range is preferably 3 mm to 50 mm, and more preferably 5 mm to 30 mm.

  Since the thickness of the sample depends on the applied impact force, it cannot be determined unconditionally. However, if the thickness is too large, the sample will not be subjected to a uniform impact, which is not preferable. In general, the thickness of the sample is preferably about the thickness of the impact surface of the flying object to which the shock wave is applied, and is preferably in the range of 0.01 mm to 20 mm. A range of 0.02 mm to 18 mm is more preferable.

  Samples are tableted and loaded to fill thickness. The tablet molding method is not particularly limited, but it is necessary to form the tablet in a shape that allows it to be loaded in close contact with the protrusion and the base support tool. The area of the bottom of the tablet is roughly the same as the area of the protrusion, but if it is too large, there will be a part where the shock wave will not be transmitted, and the homogeneity of the sample may be impaired. It is preferable to make it so that it is approximately the same as or slightly smaller than that, and is preferably 30 to 100% of the area of the impact surface of the flying object. It is more preferably 40 to 90%, and further preferably 50 to 80% in consideration of the homogeneity of the sample.

  The sample is loaded in intimate contact with the protrusion and pedestal aid. For example, as shown in FIG. 1, it is stored in a ring-shaped space formed by L3-L2 and a pedestal auxiliary tool fitted to the protrusion. FIG. 2 is a cross-sectional view of another example of a target capsule composed of a pedestal 1, a pedestal auxiliary tool 2, and an impact receiving member 3, and the impact receiving member has a cavity 5. In FIG. 2, the thickness of the sample is determined by L3-L2 + L5.

  FIG. 3 shows an example of a target capsule without a pedestal assisting tool, in which an impact receiving member has a hollow portion. In this case, the sample is loaded into a space formed by L5-L2 and the cavity 5.

  When the diameter of the impact receiving member is D4 and the thickness is L4, it is preferable that D4> D3. However, if the thickness of the impact receiving member is too thin, it may not be able to withstand the impact caused by the collision of the flying object. In addition, since it is not preferable in terms of weight if it is too thick, it is usually produced in the range of 0.1 mm to 30 mm, more preferably in the range of 0.2 mm to 20 mm.

  In the impact receiving member having a hollow portion, L4-L5 depends on the material and thickness of the flying object impact surface, so it cannot be determined unconditionally. However, if this thickness is increased too much, the diffusion of the shock wave is likely to occur. If it is made thinner, the sample may not be recovered due to destruction by shock waves. When the impact receiving member is the same as the material of the flying object impact surface, the thickness of the flying object impact surface is preferably the same as or thinner. From such a viewpoint, the thickness of L4-L5 is preferably 20% to 120% of the thickness of the flying object impact surface, and more preferably 40% to 110%.

  When the material of the flying object impact surface is harder than the material of the impact receiving member, the impact receiving member is more likely to be destroyed by the impact. Therefore, the thickness is preferably 50% to 140% of the flying object impact surface. 60% to 120% is more preferable.

  The impact receiving member and the base assisting tool may be integrated or separated. The diameter D4 of the impact receiving member is desirably set so that the cross-sectional area of the impact receiving member is larger than the cross-sectional area of the flying object, and is in the range of 1 to 3 times, preferably 1 to 2 times the flying object cross-sectional area. Is set.

  FIG. 4 is an example of another target capsule, and is a schematic view disassembled in order of assembly from the left side. In FIG. 4, 6 is a momentum trap, which plays a role of preventing the target capsule from being destroyed by scattering the momentum generated during the impact compression to the surroundings. 7 is a pedestal, 8 is an impact receiving member, and in the embodiment of FIG. 4, the pedestal 7 and the impact receiving member 8 have the same shape and constitute a pair of members. The pair of pedestals and impact receiving members, and the pedestal auxiliary tool 10 fitted to the convex projections 9 provided on the pedestals and impact receiving members form a sample loading portion. The pair of pedestals and the impact receiving member and the pedestal auxiliary tool which are combined are further fitted with the protection ring 11. The protective ring prevents the shock receiving member from spreading in the lateral direction due to the impact received by the shock receiving member and diffusing the shock wave.

  5 is a schematic cross-sectional view of FIG. 4, and FIGS. 6 and 7 are views taken along arrows AA and BB in FIG. 5, respectively. In FIG. 4 or FIG. 5, the impact receiving member 8 directly receives an impact from the flying object. Reference numeral 12 denotes an impact induction member, which is preferably provided with a gas release port and / or a gas release groove for releasing a gas that hinders the passage of a shock wave generated by gunpowder or a gunpowder gun or a light gas gun. 5, 8, and 9, eight grooves are provided radially on the pedestal side surface of the impact guide member, and in parallel therewith, there is no need to disturb when a shock wave passes through the inside of the impact guide member. This is an example in which through-holes for escaping various gases from the inside to the outside are provided radially. Since the groove and the through hole are provided to release the shock wave, there is no particular limitation on the shape and size. Reference numeral 13 denotes a bolt hole, but the bolt hole provided in the momentum trap pops out when a sample is loaded into a sample loading portion composed of a pair of pedestals and an impact receiving member and a pedestal auxiliary tool, and tightened with bolts. Serves to store the bolt part.

  The diameter of the pedestal, the thickness, the diameter of the protrusion, and the height of the protrusion are as described in FIG. 1, and are fitted to the pair of pedestals and the impact receiving member and the convex protrusions provided on each pedestal. If a sample loading part can be formed with a base auxiliary tool, it will not restrict | limit in particular. 4 to 9 are schematic views, and there are no particular limitations on the momentum trap and the protective ring.

  The material of the impact target capsule is not particularly limited, and materials such as iron, nickel, copper, brass, stainless steel, titanium, and tungsten can be used. In view of the workability of the material, economy, and durability against shock waves, it is preferable to use iron.

  In the portion where the impact target capsule and the II-VI group compound semiconductor to be filled are in contact with each other, a metal can be mixed due to the contact. Therefore, a film can be provided so as not to be in direct contact. As a film to be used, a metal that may be mixed in a II-VI compound semiconductor, for example, a film formed by thermal spraying, application of metal foil such as copper, manganese, aluminum and its oxide can be used. . A film made of an organic polymer can also be used. The organic polymer that can be used is not particularly limited, and examples thereof include polyolefins such as polyethylene, polyfluorides such as polyvinylidene fluoride, and water-soluble polymers such as polyvinyl alcohol. As a method for forming the coating, methods such as coating, spraying, and film can be used.

  In the present invention, the II-VI compound semiconductor in the target capsule is irradiated with a shock wave and molded. The method of generating the shock wave is not particularly limited, and the projectile is made to collide with the target capsule using a gun type such as a one-stage gunpowder gun, a two-stage gunpowder gun, a light gas gun, A shock wave can be generated, or a method of generating a shock wave by colliding the flying object with the target capsule by installing and exploding explosives directly on the flying object may be adopted. From the viewpoint of simplicity of equipment and quantitative productivity due to the size of the flying object, it is preferable to adopt a method in which the flying object collides with the target capsule by direct blasting.

  In the present invention, as a shock wave necessary for molding a II-VI compound semiconductor, the type of II-VI compound semiconductor or a mixed sulfide mainly composed of a II-VI compound semiconductor to be used, crystallinity, etc. The pressure at which the crystal transition of the II-VI group compound semiconductor occurs, that is, 15 GPa or more, and a pressure that is too high usually causes the crystal to break, so that it is 100 GPa or less. In consideration of safety, the pressure may be 16 GPa or more and 80 GPa or less, more preferably 18 GPa or more and 70 GPa or less.

  Although depending on the material of the flying object, the shock wave is usually generated by about 10 to 50 GPa with a single-stage gunpowder gun and about 0.01 to 15 GPa with a single-stage gas gun. Examples of the flying material include acrylonitrile-butadiene-styrene copolymer (ABS), polymer materials such as polypropylene and polyamide, and metal materials such as iron, nickel, copper, brass, stainless steel, titanium, and tungsten. It is done. Furthermore, the thing which bonded the metal material to the surface (impact part) of a polymeric material can be used.

  In the present invention, after the shock wave irradiation, the impact target capsule is disassembled, and the molded II-VI compound semiconductor molded body is taken out to obtain a molded product. The molded product may be used as it is, or the surface may be polished to remove unnecessary materials.

  According to the method for producing a molded body of the present invention, the molded body can be molded without increasing the crystal diameter. The obtained molded body has a crystallite size of 250 mm or less and a relative density of 0.85 or more. The crystallite size can be determined by X-ray diffraction.

  In the present invention, the obtained molded product is heated and fired as necessary. Although the degree of sulfide crystallinity is improved by this calcination, it is necessary to pay attention to the excessive calcination, since the molded body may be decomposed. It goes without saying that the heating temperature is not specified because it depends on the crystallinity of the sample before heating, but is usually in the range of 500 ° C. to 1200 ° C., preferably in the range of 600 ° C. to 1100 ° C.

  The firing time is not particularly limited and varies depending on the purpose, but it is usually carried out in the range of 0.5 to 10 hours and in the range of 1 to 8 hours in consideration of the heating and cooling capabilities of the apparatus. The Needless to say, firing is usually performed in an inert atmosphere or a reducing atmosphere. As a method, either a batch method or a continuous method may be adopted.

  EXAMPLES The present invention will be described in detail below with reference to examples, but the present invention is not limited to the following examples.

Example 1
A momentum trap 6 having a diameter of 110 mm and a thickness of 30 mm, a pair of pedestals 7 and impact receiving members 8 having a diameter of 100 mm and a thickness of 7 mm and a convex projection 9 having a diameter of 40 mm and a height of 5 mm, an outer diameter of 60 mm, an inner diameter of 40 mm , A cylindrical pedestal auxiliary tool 10 having a height of 10 mm, a cylindrical protective ring 11 having an outer diameter of 110 mm, an inner diameter of 100 mm, and a height of 16 mm, a diameter of 100 mm, a thickness of 33 mm, and a width of about 8 mm. 4 to FIG. 9 composed of 8 grooves radially provided with a length of 13 mm and a length of about 30 mm, and an impact receiving member having a through hole provided radially extending from the inside to the outside in parallel with them. An iron target capsule as shown in FIG. 1 is prepared, and is composed of a pair of pedestals and impact receiving members, and a pedestal auxiliary tool that is fitted into convex protrusions provided on the pedestals and impact receiving members. The sample loading unit, a zinc sulfide 30g of crystallite size 201Å as determined by X-ray diffraction using the 2t press was charged under pressure (bulk density 3g / ^cm 3). After fastening them with bolts, they are placed on a momentum trap, a protective ring and an impact guide member are stacked one on top of the other, and an iron projectile with a thickness of 2 mm and 42 mmφ is fixed to the top of the impact guide member with stainless steel tape. Installed. At the top of the flying object, a vinyl ring with an inner diameter of 40 mm, a thickness of 3 mm, and a height of 15 mm was attached with 18 g of pen slit gunpowder (equivalent to 18 GPa by shock wave) and a detonator to blast it. Due to the explosion of the pen slit gunpowder, the flying object exploded on the target capsule. After the blasting, the target capsule was disassembled and the internal zinc sulfide was taken out. As a result, a molded body having an outer diameter of 40 mm and a height of 4.8 mm was obtained. The bulk density of the molded body was 3.6, and the relative density (ratio of the bulk density to the theoretical density. The original density of zinc sulfide of 4.0 g / cm ³ was used as the theoretical density. The same applies in the following examples.) Was 0.90 and the crystallite size was 186 mm, and a molded body having a sufficient density as a target material could be obtained.

Example 2
In Example 1, it replaced with zinc sulfide and performed similarly to Example 1 except having used 30 g of zinc sulfides having a crystallite size of 221 mm obtained by X-ray diffraction containing 1000 ppm of copper. As a result, a molded body having a density sufficient as a target material having a bulk density of 3.6, a relative density of 0.90, and a crystallite size of 196 mm could be obtained.

Example 3
In Example 2, it carried out like Example 1 except the amount of pen slit explosives having been 20 g (it is equivalent to 20 GPa with a shock wave). As a result, a molded article having a density sufficient as a target material having a bulk density of 3.7, a relative density of 0.93, and a crystallite size of 241 mm could be obtained.

Example 4
A similar target capsule filled with a sample similar to that used in Example 1 was mounted on a shock wave generator Type 20 manufactured by GM Engineering Co., Ltd., and a polypropylene flying object (2 mm thickness made of impact surface iron) was 800 m / mm. Colliding in seconds, a pressure of 16.5 GPa was applied. The obtained molded body had a bulk density of 3.40, a relative density of 0.85, and a crystallite size of 181 mm.

Example 5
The same procedure as in Example 1 was performed except that the target capsule shown in FIG. 3 with D1 = 60 mm, D2 = 20 mm, D4 = 60 mm, L1 = 10 mm, L2 = 7 mm, L4 = 12 mm, and L5 = 10 mm was used. After the blasting, the target capsule was disassembled and the zinc sulfide molded product was taken out. The resulting molded body had a relative density of 0.86 and a crystallite size of 180 mm, but there was a brittle portion on the outer periphery of the molded body as compared with the molded body obtained in Example 1.

Comparative Example 1
12 g of zinc sulfide used in Example 1 was put into a 30 mmφ graphite mold and filled in a hot press machine. The inside of the mold was depressurized to 130 Pa, held for 10 minutes, and released to normal pressure with argon. This operation was performed three times, the pressure was released with argon gas, and the temperature was raised to 900 ° C. over 1 hour. After raising the temperature, the pressure was released, and the mixture was cooled to room temperature in 2 hours. The molded body was removed from the mold to obtain a molded body of 30 mmφ. The crystallite size of the obtained molded body was 286 mm.

Comparative Example 2
The same operation as in Comparative Example 1 was performed except that zinc sulfide containing 1000 ppm of copper in Example 2 was used. The crystallite size of the obtained molded body was 406 mm.

Claims (9)

A II-VI group compound semiconductor molded body having a crystallite size of 250 mm or less and a relative density of 0.85 or more. The molded article according to claim 1, wherein the II-VI group compound semiconductor is zinc sulfide or a mixture of zinc sulfide and other metal sulfides. (A) a pedestal having a convex protrusion; (B) a pedestal auxiliary tool that is fitted to the convex protrusion to form a sample loading portion; and (C) an impact receiving member. (B) A pedestal auxiliary tool and (C) an impact receiving member are loaded with a sample in a detachable impact target capsule and molded using a shock wave, thereby producing a II-VI compound semiconductor molded body Method. 4. The method according to claim 3, further comprising using an impact target capsule provided with an impact buffering member. The method according to claim 4, wherein the impact buffering member is an impact target capsule having a pressure release port and / or a pressure release groove for releasing a pressure generated when an impact is applied. The method according to claim 3, wherein the shock wave is 15 GPa or more. The method according to any one of claims 3 to 6, wherein the II-VI compound semiconductor is zinc sulfide or a mixture of zinc sulfide and another metal sulfide. II-VI group compound semiconductor molding characterized in that an impact target capsule having a sample loading section is prepared, II-VI group compound semiconductor is loaded into the sample loading section, and a shock wave of 15 GPa or more is applied to the impact target capsule Body manufacturing method. 9. The method of claim 8, wherein the II-VI compound semiconductor is zinc sulfide or a mixture of zinc sulfide and other metal sulfides.

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