JPS649747B2 - - Google Patents

Info

Publication number
JPS649747B2
JPS649747B2 JP58026501A JP2650183A JPS649747B2 JP S649747 B2 JPS649747 B2 JP S649747B2 JP 58026501 A JP58026501 A JP 58026501A JP 2650183 A JP2650183 A JP 2650183A JP S649747 B2 JPS649747 B2 JP S649747B2
Authority
JP
Japan
Prior art keywords
cds photoconductive
electrodes
pair
discharge
cds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58026501A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59152677A (ja
Inventor
Akira Kaneda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58026501A priority Critical patent/JPS59152677A/ja
Publication of JPS59152677A publication Critical patent/JPS59152677A/ja
Publication of JPS649747B2 publication Critical patent/JPS649747B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP58026501A 1983-02-18 1983-02-18 ＣｄＳ光導電セル Granted JPS59152677A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58026501A JPS59152677A (ja) 1983-02-18 1983-02-18 ＣｄＳ光導電セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026501A JPS59152677A (ja) 1983-02-18 1983-02-18 ＣｄＳ光導電セル

Publications (2)

Publication Number Publication Date
JPS59152677A JPS59152677A (ja) 1984-08-31
JPS649747B2 true JPS649747B2 (cg-RX-API-DMAC7.html) 1989-02-20

Family

ID=12195231

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026501A Granted JPS59152677A (ja) 1983-02-18 1983-02-18 ＣｄＳ光導電セル

Country Status (1)

Country Link
JP (1) JPS59152677A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2430797A (en) * 2005-09-28 2007-04-04 Macron Internat Group Ltd A method of making a photoresistor
JP6761872B2 (ja) 2017-01-05 2020-09-30 パナソニック株式会社 半導体リレー

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563571A (en) * 1978-11-02 1980-05-13 Mitsubishi Electric Corp Protective device for semiconductor device with control electrode

Also Published As

Publication number Publication date
JPS59152677A (ja) 1984-08-31

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