JPS6485220A - Protective coating material composition for semiconductor device - Google Patents

Protective coating material composition for semiconductor device

Info

Publication number
JPS6485220A
JPS6485220A JP62241870A JP24187087A JPS6485220A JP S6485220 A JPS6485220 A JP S6485220A JP 62241870 A JP62241870 A JP 62241870A JP 24187087 A JP24187087 A JP 24187087A JP S6485220 A JPS6485220 A JP S6485220A
Authority
JP
Japan
Prior art keywords
component
tetracarboxylic acid
acid dianhydride
protective coating
bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62241870A
Other languages
Japanese (ja)
Inventor
Mitsumasa Kojima
Takayuki Saito
Noburu Kikuchi
Shunichiro Uchimura
Hiroshi Suzuki
Nintei Sato
Daisuke Makino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Showa Denko Materials Co Ltd
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Priority to JP62241870A priority Critical patent/JPS6485220A/en
Publication of JPS6485220A publication Critical patent/JPS6485220A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain the title composition which can prevent a semiconductor element from malfunctioning caused by incident alpha-rays, by reacting an acid component containing a specified tetracarboxylic acid dianhydride with a diamine component. CONSTITUTION:An acid component (A) comprising a siloxane bond-containing tetracarboxylic acid dianhydride (a) of formula I (wherein R is a monovalent hydrocarbon group, and m is >=1) and, optionally, another aromatic tetracarboxylic acid dianhydride (b) is reacted with about 1mol., per mol. of component A, of a diamine component (B) optionally containing 0.1-10mol.% diaminosiloxane of formula II (wherein R<1> is a bivalent hydrocarbon group, and R<2> is R) at 80 deg.C or below in an inert solvent to obtain the title composition comprising a polyamic acid intermediate of a total content of U and Th of <=0.2ppb. This composition is applied to a semiconductor memory element of a degree of integration >=1K bit in case of a bipolar type, or >=16K bit in case of a MOS type, and heat-treated to obtain a protective coating layer of thickness >=30mum, comprising a polyimidesilicon copolymer.
JP62241870A 1987-09-25 1987-09-25 Protective coating material composition for semiconductor device Pending JPS6485220A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62241870A JPS6485220A (en) 1987-09-25 1987-09-25 Protective coating material composition for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62241870A JPS6485220A (en) 1987-09-25 1987-09-25 Protective coating material composition for semiconductor device

Publications (1)

Publication Number Publication Date
JPS6485220A true JPS6485220A (en) 1989-03-30

Family

ID=17080750

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62241870A Pending JPS6485220A (en) 1987-09-25 1987-09-25 Protective coating material composition for semiconductor device

Country Status (1)

Country Link
JP (1) JPS6485220A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH036226A (en) * 1989-05-31 1991-01-11 Shin Etsu Chem Co Ltd Polyimide resin solution composition
JPH0364355A (en) * 1989-08-02 1991-03-19 Shin Etsu Chem Co Ltd Composition for protection of semiconductor element
JPH03168214A (en) * 1989-11-28 1991-07-22 Hitachi Ltd Semiconductor device, its production, electronic circuit and polyimide resin containing siloxane skeleton
JPH0598236A (en) * 1991-10-14 1993-04-20 Sumitomo Bakelite Co Ltd Thermally contact-bondable filmy adhesive
JPH0598237A (en) * 1991-10-14 1993-04-20 Sumitomo Bakelite Co Ltd Thermally contact-bondable filmy adhesive
JPH05117622A (en) * 1991-10-29 1993-05-14 Sumitomo Bakelite Co Ltd Hot melt bondable filmy adhesive having high thermal conductivity
US5376733A (en) * 1993-03-24 1994-12-27 Shin-Etsu Chemical Co., Ltd. Precursor composition capable of yielding a polyimidesilicone resin

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159425A (en) * 1984-12-05 1986-07-19 ゼネラル・エレクトリツク・カンパニイ Polyanhydride-siloxane and polyimide-siloxane obtained therefrom
JPS62263227A (en) * 1986-05-09 1987-11-16 ゼネラル・エレクトリツク・カンパニイ Polyanhydride-siloxane and polyimide-siloxane obtained therefrom
JPS6323928A (en) * 1986-07-16 1988-02-01 Nippon Steel Chem Co Ltd Production of modified polyimide
JPS63234031A (en) * 1987-02-05 1988-09-29 ゼネラル・エレクトリック・カンパニイ Polyimide-siloxane, and its production and use
JPS63235378A (en) * 1987-02-27 1988-09-30 ゼネラル・エレクトリック・カンパニイ Siliconepolyimide

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61159425A (en) * 1984-12-05 1986-07-19 ゼネラル・エレクトリツク・カンパニイ Polyanhydride-siloxane and polyimide-siloxane obtained therefrom
JPS62263227A (en) * 1986-05-09 1987-11-16 ゼネラル・エレクトリツク・カンパニイ Polyanhydride-siloxane and polyimide-siloxane obtained therefrom
JPS6323928A (en) * 1986-07-16 1988-02-01 Nippon Steel Chem Co Ltd Production of modified polyimide
JPS63234031A (en) * 1987-02-05 1988-09-29 ゼネラル・エレクトリック・カンパニイ Polyimide-siloxane, and its production and use
JPS63235378A (en) * 1987-02-27 1988-09-30 ゼネラル・エレクトリック・カンパニイ Siliconepolyimide

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH036226A (en) * 1989-05-31 1991-01-11 Shin Etsu Chem Co Ltd Polyimide resin solution composition
JPH0364355A (en) * 1989-08-02 1991-03-19 Shin Etsu Chem Co Ltd Composition for protection of semiconductor element
JPH03168214A (en) * 1989-11-28 1991-07-22 Hitachi Ltd Semiconductor device, its production, electronic circuit and polyimide resin containing siloxane skeleton
JPH0598236A (en) * 1991-10-14 1993-04-20 Sumitomo Bakelite Co Ltd Thermally contact-bondable filmy adhesive
JPH0598237A (en) * 1991-10-14 1993-04-20 Sumitomo Bakelite Co Ltd Thermally contact-bondable filmy adhesive
JPH05117622A (en) * 1991-10-29 1993-05-14 Sumitomo Bakelite Co Ltd Hot melt bondable filmy adhesive having high thermal conductivity
US5376733A (en) * 1993-03-24 1994-12-27 Shin-Etsu Chemical Co., Ltd. Precursor composition capable of yielding a polyimidesilicone resin

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