JPS6484915A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6484915A JPS6484915A JP62241064A JP24106487A JPS6484915A JP S6484915 A JPS6484915 A JP S6484915A JP 62241064 A JP62241064 A JP 62241064A JP 24106487 A JP24106487 A JP 24106487A JP S6484915 A JPS6484915 A JP S6484915A
- Authority
- JP
- Japan
- Prior art keywords
- ground level
- signal
- usual
- energized state
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Logic Circuits (AREA)
- Dram (AREA)
- Electronic Switches (AREA)
Abstract
PURPOSE:To equalize the transfer characteristic with that in a usual time even if a ground level rises by connecting in parallel a second transistor of a low threshold level to a first transistor of an inverter, and inputting an output signal of an input control circuit to its gate. CONSTITUTION:When a ground level exceeds a prescribed level, H being a signal ISC, and L being a signal ISC' are applied from the outside to the respective gates of N-type transistors Tr6, 7, and the Tr6 and the Tr7 go to a energized state and a cut-off state, respectively. As a result, from this input control circuit 5, an inputted input signal VIN is outputted as it is. Accordingly, the signal VIN is applied not only to gates of P-type and N-type Trs1, 2 in the same way as usual, but also to a gate of Tr4 through the circuit 5, therefore, even if the Tr2 does not go to an energized state due to rise of the ground level, when a voltage of the signal VIN is higher than a threshold voltage of the Tr4, the Tr4 goes to an energized state. As a result, the transfer characteristic goes to almost the same as the case when the ground level is usual.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241064A JPS6484915A (en) | 1987-09-26 | 1987-09-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62241064A JPS6484915A (en) | 1987-09-26 | 1987-09-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6484915A true JPS6484915A (en) | 1989-03-30 |
Family
ID=17068761
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62241064A Pending JPS6484915A (en) | 1987-09-26 | 1987-09-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6484915A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010192901A (en) * | 2009-02-18 | 2010-09-02 | Samsung Electronics Co Ltd | Sram using carbon nanotube thin film |
-
1987
- 1987-09-26 JP JP62241064A patent/JPS6484915A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010192901A (en) * | 2009-02-18 | 2010-09-02 | Samsung Electronics Co Ltd | Sram using carbon nanotube thin film |
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