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Toshiba Corp
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Toshiba Corp
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Publication date
Application filed by Toshiba CorpfiledCriticalToshiba Corp
Priority to JP62240830ApriorityCriticalpatent/JPS6484647A/en
Publication of JPS6484647ApublicationCriticalpatent/JPS6484647A/en
PURPOSE:To obtain a semiconductor device substrate excellent in electrical characteristics and mechanical strength by a method wherein a material, which is composed of a ceramic, a glass composed chiefly of ZnO, B2O3, SiO2, Al2O3, and P2O5, and a caking agent, is subjected to sintering at a high temperature and then allowed to solidify. CONSTITUTION:A glass chiefly composed of ZnO, B2O3, SiO2, Al2O3, and P2O5, a ceramic such as steatite zircon, and a caking agent such as starch are mixed together. The mixture is then press-formed at a high temperature into a ceramic substrate 1 for a semiconductor device. Such a substrate 1 is excellent in electrical characteristics and mechanical strength.
JP62240830A1987-09-281987-09-28Substrate for semiconductor device
PendingJPS6484647A
(en)