JPS6479007A - Production of film dispersing metal chalcogenide particles - Google Patents

Production of film dispersing metal chalcogenide particles

Info

Publication number
JPS6479007A
JPS6479007A JP62234912A JP23491287A JPS6479007A JP S6479007 A JPS6479007 A JP S6479007A JP 62234912 A JP62234912 A JP 62234912A JP 23491287 A JP23491287 A JP 23491287A JP S6479007 A JPS6479007 A JP S6479007A
Authority
JP
Japan
Prior art keywords
film
soln
contg
metal chalcogenide
chalcogenide particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62234912A
Other languages
Japanese (ja)
Other versions
JP2509635B2 (en
Inventor
Kenji Honda
Atsushi Kuwano
Kazuyuki Chiba
Akira Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sagami Chemical Research Institute
Original Assignee
Sagami Chemical Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sagami Chemical Research Institute filed Critical Sagami Chemical Research Institute
Priority to JP62234912A priority Critical patent/JP2509635B2/en
Publication of JPS6479007A publication Critical patent/JPS6479007A/en
Application granted granted Critical
Publication of JP2509635B2 publication Critical patent/JP2509635B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

PURPOSE:To efficiently obtain the titled flexible and semiconductive dispersing film usable for optoelectronics element, having large surface area, by diffusing a soln. contg. transition metal ion and a soln. dissolved reducing agent contg. chalcogen element to a substrative film from both sides of the film, respectively. CONSTITUTION:The soln. contg. transition metal ion selected among transition elements of group IB, IIB and VIII in the Periodic Table [e.g., aq. soln. of Cd(CH3COO)2] and the soln. dissolved reducing agent contg. chalcogen element such as H2S, Na2S, NaSe2O3, NaTe2, etc., in a polar solvent, are permeated and diffused to the substrative film such as polymer film such as cation- exchange membrane, e.g. 'Nafion(R)', electrically neutral PVA, Nylon, porous 'Teflon(R)' from both sides of the film, respectively, to uniformly deposit and disperse the metal chalcogenide particles and obtain the titled film.
JP62234912A 1987-09-21 1987-09-21 Method for producing metal chalcogenide particle dispersed film Expired - Lifetime JP2509635B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62234912A JP2509635B2 (en) 1987-09-21 1987-09-21 Method for producing metal chalcogenide particle dispersed film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62234912A JP2509635B2 (en) 1987-09-21 1987-09-21 Method for producing metal chalcogenide particle dispersed film

Publications (2)

Publication Number Publication Date
JPS6479007A true JPS6479007A (en) 1989-03-24
JP2509635B2 JP2509635B2 (en) 1996-06-26

Family

ID=16978233

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62234912A Expired - Lifetime JP2509635B2 (en) 1987-09-21 1987-09-21 Method for producing metal chalcogenide particle dispersed film

Country Status (1)

Country Link
JP (1) JP2509635B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993008594A1 (en) * 1991-10-18 1993-04-29 Bp Solar Limited Electrochemical process
EP1136614A1 (en) * 2000-03-17 2001-09-26 Tokyo Institute Of Technology Method for forming a thin film
JP2014024727A (en) * 2012-07-27 2014-02-06 Kobe Steel Ltd Copper sulfide film and method of manufacturing thereof
CN117867761A (en) * 2024-01-04 2024-04-12 中南大学 Preparation method and application of semiconductor sulfide composite nanofiber membrane

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993008594A1 (en) * 1991-10-18 1993-04-29 Bp Solar Limited Electrochemical process
EP1136614A1 (en) * 2000-03-17 2001-09-26 Tokyo Institute Of Technology Method for forming a thin film
US6448148B2 (en) 2000-03-17 2002-09-10 Tokyo Institute Of Technology Method for forming a thin film
JP2014024727A (en) * 2012-07-27 2014-02-06 Kobe Steel Ltd Copper sulfide film and method of manufacturing thereof
CN117867761A (en) * 2024-01-04 2024-04-12 中南大学 Preparation method and application of semiconductor sulfide composite nanofiber membrane

Also Published As

Publication number Publication date
JP2509635B2 (en) 1996-06-26

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