JPS6477929A - Plasma cvd device - Google Patents
Plasma cvd deviceInfo
- Publication number
- JPS6477929A JPS6477929A JP23560587A JP23560587A JPS6477929A JP S6477929 A JPS6477929 A JP S6477929A JP 23560587 A JP23560587 A JP 23560587A JP 23560587 A JP23560587 A JP 23560587A JP S6477929 A JPS6477929 A JP S6477929A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- power
- output
- frequency power
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To conform the frequency of high-frequency power completely, and to prevent the fluctuation of the potential of plasma due to the mutual intervention of high-frequency power by providing a frequency normalizing means conforming the frequency of high-frequency power applied to each high-frequency electrode respectively generating discharge in a plurality of adjacent reaction spaces to one frequency. CONSTITUTION:A frequency normalizing means 7 is composed of one highfrequency power 3 and an output distributing circuit 8 distributing and supplying an output from the high-frequency power 3 to lower amplifying stages made to correspond to each reaction chamber 1a-1c consisting of driver circuits 4a-4c, power amplifier circuits 5a-5a and matching circuits 6a-6c, and the output distributing circuit 8 is connected to respective driver circuit 4a-4c. In such a plasma CVD device, a high- frequency signal output from the high-frequency power 3 is distributed respectively to the power amplifying stages by the output distributing circuit 8, and power is amplified up to several dozen or several hundred W. Consequently, the frequency of high frequency power applied to each high-frequency electrode 2a-2c is conformed completely. Accordingly, no mutual intervention is generated among these high-frequency power, thus generating no fluctuation of the potential of plasma in each reaction chamber 1a-1c.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23560587A JPS6477929A (en) | 1987-09-19 | 1987-09-19 | Plasma cvd device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23560587A JPS6477929A (en) | 1987-09-19 | 1987-09-19 | Plasma cvd device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477929A true JPS6477929A (en) | 1989-03-23 |
Family
ID=16988484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23560587A Pending JPS6477929A (en) | 1987-09-19 | 1987-09-19 | Plasma cvd device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477929A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004076122A (en) * | 2002-08-21 | 2004-03-11 | Ebatekku:Kk | Plasma surface treatment method and apparatus for the same |
-
1987
- 1987-09-19 JP JP23560587A patent/JPS6477929A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004076122A (en) * | 2002-08-21 | 2004-03-11 | Ebatekku:Kk | Plasma surface treatment method and apparatus for the same |
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