JPS6477929A - Plasma cvd device - Google Patents

Plasma cvd device

Info

Publication number
JPS6477929A
JPS6477929A JP23560587A JP23560587A JPS6477929A JP S6477929 A JPS6477929 A JP S6477929A JP 23560587 A JP23560587 A JP 23560587A JP 23560587 A JP23560587 A JP 23560587A JP S6477929 A JPS6477929 A JP S6477929A
Authority
JP
Japan
Prior art keywords
frequency
power
output
frequency power
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23560587A
Other languages
Japanese (ja)
Inventor
Mikio Deguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23560587A priority Critical patent/JPS6477929A/en
Publication of JPS6477929A publication Critical patent/JPS6477929A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To conform the frequency of high-frequency power completely, and to prevent the fluctuation of the potential of plasma due to the mutual intervention of high-frequency power by providing a frequency normalizing means conforming the frequency of high-frequency power applied to each high-frequency electrode respectively generating discharge in a plurality of adjacent reaction spaces to one frequency. CONSTITUTION:A frequency normalizing means 7 is composed of one highfrequency power 3 and an output distributing circuit 8 distributing and supplying an output from the high-frequency power 3 to lower amplifying stages made to correspond to each reaction chamber 1a-1c consisting of driver circuits 4a-4c, power amplifier circuits 5a-5a and matching circuits 6a-6c, and the output distributing circuit 8 is connected to respective driver circuit 4a-4c. In such a plasma CVD device, a high- frequency signal output from the high-frequency power 3 is distributed respectively to the power amplifying stages by the output distributing circuit 8, and power is amplified up to several dozen or several hundred W. Consequently, the frequency of high frequency power applied to each high-frequency electrode 2a-2c is conformed completely. Accordingly, no mutual intervention is generated among these high-frequency power, thus generating no fluctuation of the potential of plasma in each reaction chamber 1a-1c.
JP23560587A 1987-09-19 1987-09-19 Plasma cvd device Pending JPS6477929A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23560587A JPS6477929A (en) 1987-09-19 1987-09-19 Plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23560587A JPS6477929A (en) 1987-09-19 1987-09-19 Plasma cvd device

Publications (1)

Publication Number Publication Date
JPS6477929A true JPS6477929A (en) 1989-03-23

Family

ID=16988484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23560587A Pending JPS6477929A (en) 1987-09-19 1987-09-19 Plasma cvd device

Country Status (1)

Country Link
JP (1) JPS6477929A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076122A (en) * 2002-08-21 2004-03-11 Ebatekku:Kk Plasma surface treatment method and apparatus for the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004076122A (en) * 2002-08-21 2004-03-11 Ebatekku:Kk Plasma surface treatment method and apparatus for the same

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