JPS6477154A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS6477154A JPS6477154A JP23398887A JP23398887A JPS6477154A JP S6477154 A JPS6477154 A JP S6477154A JP 23398887 A JP23398887 A JP 23398887A JP 23398887 A JP23398887 A JP 23398887A JP S6477154 A JPS6477154 A JP S6477154A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- circuit
- power source
- terminal
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To exclude a parasitic current so as to decrease the power loss of the whole system, and improve a device in a noise resistant property by a method wherein a junction isolated substrate of an integrated circuit is made to be insulated from a ground potential and a negative voltage generated by pulses from a power source is made to be impressed onto a substrate using a differential circuit, a rectifying circuit, and a charging circuit of the same integrated circuit semiconductor element. CONSTITUTION:A condenser CHV is made to be connected with a constant voltage power source VDD or a high voltage power source VDH which supplies a clock pulse through the intermediary of a terminal 91. A transistor Q, which is made to be on being supplied with a base current from a constant voltage power terminal 93 through the intermediary of a resistor RB, functions so as to form a rectified waveform out of a differential waveform obtained from a differential circuit which is composed of CHV and R. A diode D removes a positive component contained in a rectified waveform and a negative voltage of -3 or -5 volts, for example, is generated at a terminal 94 connected with an anode 73. A substrate 1 is made to be kept at a negative potential by applying the above negative voltage to an electrode of the substrate 1 through a condenser CSUB.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23398887A JPS6477154A (en) | 1987-09-18 | 1987-09-18 | Semiconductor integrated circuit device |
US07/244,918 US4933573A (en) | 1987-09-18 | 1988-09-14 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23398887A JPS6477154A (en) | 1987-09-18 | 1987-09-18 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6477154A true JPS6477154A (en) | 1989-03-23 |
Family
ID=16963784
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23398887A Pending JPS6477154A (en) | 1987-09-18 | 1987-09-18 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6477154A (en) |
-
1987
- 1987-09-18 JP JP23398887A patent/JPS6477154A/en active Pending
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