JPS6476915A - Superconducting material having high critical temperature, its production and apparatus therefor - Google Patents
Superconducting material having high critical temperature, its production and apparatus thereforInfo
- Publication number
- JPS6476915A JPS6476915A JP62233287A JP23328787A JPS6476915A JP S6476915 A JPS6476915 A JP S6476915A JP 62233287 A JP62233287 A JP 62233287A JP 23328787 A JP23328787 A JP 23328787A JP S6476915 A JPS6476915 A JP S6476915A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- beta
- superconducting material
- prescribed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
PURPOSE:To obtain a superconducting material having high purity and high critical temperature and useful as a raw material for various electronic elements requiring uniform and accurate characteristic, by restricting the atomic valence of Cu for forming a specific compound oxide to divalent or trivalent. CONSTITUTION:A substrate holder 3 having built-in heater 4 and capable of controlling the substrate temperature is disposed in a vacuum chamber 1. A substrate 2 (e.g. MgO single crystal substrate) having a thermal expansion coefficient, lattice constants, etc., close to those of the thin film to be formed is fixed on the substrate holder 3. A prescribed number of electron beam gun pairs 5, 6 are placed opposite to the substrate and the substrate is irradiated with ion beams of a group IIa element (e.g. Ba) alpha, group IIIa element (e.g. Y) beta, Cu and oxygen at prescribed doses from the beam guns 5, 6 to form a thin crystal film on the substrate 2. Separately, the surface state of the thin film is analyzed with an X-ray source 7 and a photo-detector 8 and the atomic valence of the Cu atom constituting the thin film is monitored. The growth condition of the thin film is controlled in such a manner as to keep the atomic valence of Cu at a prescribed divalence/trivalence ratio to obtain the objective compound oxide superconducting material of formula (x is atomic ratio beta/alpha+beta and is 0.1<=x<=0.9; y and z are 0.4<=y<=3.0 and 1<=z<=5 when alpha1-xbetax=1).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62233287A JPS6476915A (en) | 1987-09-17 | 1987-09-17 | Superconducting material having high critical temperature, its production and apparatus therefor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62233287A JPS6476915A (en) | 1987-09-17 | 1987-09-17 | Superconducting material having high critical temperature, its production and apparatus therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6476915A true JPS6476915A (en) | 1989-03-23 |
Family
ID=16952736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62233287A Pending JPS6476915A (en) | 1987-09-17 | 1987-09-17 | Superconducting material having high critical temperature, its production and apparatus therefor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6476915A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108862363A (en) * | 2018-06-25 | 2018-11-23 | 广东工业大学 | A kind of delafossite structure CuYO2Powder and its preparation method and application |
-
1987
- 1987-09-17 JP JP62233287A patent/JPS6476915A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108862363A (en) * | 2018-06-25 | 2018-11-23 | 广东工业大学 | A kind of delafossite structure CuYO2Powder and its preparation method and application |
CN108862363B (en) * | 2018-06-25 | 2020-08-14 | 广东工业大学 | CuYO with delafossite structure2Powder, method for the production thereof and use thereof |
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