JPS647567U - - Google Patents
Info
- Publication number
- JPS647567U JPS647567U JP10119287U JP10119287U JPS647567U JP S647567 U JPS647567 U JP S647567U JP 10119287 U JP10119287 U JP 10119287U JP 10119287 U JP10119287 U JP 10119287U JP S647567 U JPS647567 U JP S647567U
- Authority
- JP
- Japan
- Prior art keywords
- building
- sheet
- landscape
- base
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 7
Landscapes
- Floor Finish (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10119287U JPS647567U (zh) | 1987-06-30 | 1987-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10119287U JPS647567U (zh) | 1987-06-30 | 1987-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS647567U true JPS647567U (zh) | 1989-01-17 |
Family
ID=31329962
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10119287U Pending JPS647567U (zh) | 1987-06-30 | 1987-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS647567U (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7166503B2 (en) | 1993-10-01 | 2007-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a TFT with laser irradiation |
| US7408233B2 (en) | 1993-01-18 | 2008-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region |
-
1987
- 1987-06-30 JP JP10119287U patent/JPS647567U/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7408233B2 (en) | 1993-01-18 | 2008-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having N-channel thin film transistor with LDD regions and P-channel thin film transistor with LDD region |
| US7166503B2 (en) | 1993-10-01 | 2007-01-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a TFT with laser irradiation |