JPS6475673A - Composite sputter target - Google Patents

Composite sputter target

Info

Publication number
JPS6475673A
JPS6475673A JP23301787A JP23301787A JPS6475673A JP S6475673 A JPS6475673 A JP S6475673A JP 23301787 A JP23301787 A JP 23301787A JP 23301787 A JP23301787 A JP 23301787A JP S6475673 A JPS6475673 A JP S6475673A
Authority
JP
Japan
Prior art keywords
sputter target
holes
sectional form
composite
secondary material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23301787A
Other languages
English (en)
Inventor
Hidekazu Nakajima
Masahiro Miyazaki
Motonobu Mihara
Itaru Shibata
Kazunori Naito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP23301787A priority Critical patent/JPS6475673A/ja
Publication of JPS6475673A publication Critical patent/JPS6475673A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP23301787A 1987-09-17 1987-09-17 Composite sputter target Pending JPS6475673A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23301787A JPS6475673A (en) 1987-09-17 1987-09-17 Composite sputter target

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23301787A JPS6475673A (en) 1987-09-17 1987-09-17 Composite sputter target

Publications (1)

Publication Number Publication Date
JPS6475673A true JPS6475673A (en) 1989-03-22

Family

ID=16948506

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23301787A Pending JPS6475673A (en) 1987-09-17 1987-09-17 Composite sputter target

Country Status (1)

Country Link
JP (1) JPS6475673A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE41266E1 (en) 1990-09-18 2010-04-27 Lam Research Corporation Composite electrode for plasma processes
JP2016037617A (ja) * 2014-08-05 2016-03-22 富士電機株式会社 スパッタリングターゲット並びにそれを用いたｐｖｄ膜の製造方法およびｐｖｄ膜中の不純物濃度の制御方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108884A (en) * 1977-03-04 1978-09-22 Nec Corp Sputtering device
JPS58100679A (ja) * 1981-12-10 1983-06-15 Shinku Yakin Kk 高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲット
JPS612449B2 (ja) * 1979-07-11 1986-01-24 Hitachi Zosen Kk

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53108884A (en) * 1977-03-04 1978-09-22 Nec Corp Sputtering device
JPS612449B2 (ja) * 1979-07-11 1986-01-24 Hitachi Zosen Kk
JPS58100679A (ja) * 1981-12-10 1983-06-15 Shinku Yakin Kk 高融点金属とケイ素とからなるマグネトロンスパッタ用分割タ−ゲット

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE41266E1 (en) 1990-09-18 2010-04-27 Lam Research Corporation Composite electrode for plasma processes
JP2016037617A (ja) * 2014-08-05 2016-03-22 富士電機株式会社 スパッタリングターゲット並びにそれを用いたｐｖｄ膜の製造方法およびｐｖｄ膜中の不純物濃度の制御方法

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